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PDMB150B12C_1

PDMB150B12C_1

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PDMB150B12C_1 - 150A 1200V - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PDMB150B12C_1 数据手册
QS043-401M0060 (2/4) IGBT Module-Dual □ 回 路 図 : CIRCUIT PDMB150B12C 150 A,1200V PDMB150B12C2 □ 外 形 寸 法 図 : OUTLINE DRAWING 1 08 93 ± 0 .2 5 14 11 14 11 14 3-M6 7(G2) 6(E2) 4-Ø 6.5 12.0 11.0 12.0 11.0 12.0 94.0 80 ±0.25 15 6 48 ± 0 .2 5 62 11 13 20 (C2E1) 1 (E2) 2 (C1) 3 2-Ø6.5 6 48.0 16.0 14.0 5(E1) 4(G1) 5 4 5 4 3-M5 23.0 23.0 17.0 25 16 9 16 25 9 16 24 14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5 8 30 +1.0 - 0.5 23 LABEL 30 +1.0 - 0 .5 LABEL PDMB150B12C □ 最 大 定 格 : MAXIMUM RATINGS Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms (TC=25℃) Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor PDMB150B12C Rated 7 PDMB150B12C2 Dimension:[mm] Value 7 4 18.0 6 4 1 2 3 7 1 2 3 7 6 Unit V V A W ℃ ℃ V(RMS) 1,200 ±20 150 300 730 -40~+150 -40~+125 2,500 3(30.6) N・m 3(30.6) PDMB150B12C2 2(20.4) (kgf・cm) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 150A,VGE= 15V VCE= 5V,IC= 150mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 4Ω RG= 3.6Ω VGE= ±15V Min. - - - 4.0 - - - - - Typ. - - 1.9 - 12,600 0.25 0.40 0.25 0.80 Max. 3.0 1.0 2.4 8.0 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time μs □フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time □熱 的 特性 WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 150 300 Min. - - Typ. 1.9 0.2 Max. 2.4 0.3 Unit A DC 1ms Test Condition IF= 150A,VGE= 0V IF= 150A,VGE= -10V di/dt= 300A/μs Unit V μs : THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. - - Typ. - - Max. 0.16 0.32 Unit ℃/W Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode 日本インター株式会社 QS043-401M0060 (3/4) PDMB150B12 PDMB150B12C Fig.1- Output Characteristics (Typical) 300 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25℃ 16 TC=25℃ IC=75A 300A VGE =20V 250 12V 10V 15V Collector to Emitter Voltage V CE ( V) 14 12 10 8 6 4 2 0 150A Collector Current I C ( A) 200 9V 150 100 8V 50 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125℃ I C=75A 300A Collector to Emitter Voltage V CE ( V) Collector to Emitter Voltage V CE ( V) 14 RL=4Ω TC=25℃ 14 Gate to Emitter Voltage V GE ( V) 150A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 4 200V 100 0 0 150 300 450 600 750 900 1050 2 0 1200 0 4 8 12 16 20 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 1.4 Fig.6- Collector Current vs. Switching Time (Typical) V CC=600V R G= 3.0 Ω V GE =±15V TC=25℃ VGE =0V f=1MHZ Cies TC=25℃ 1.2 Switching Time t ( μs) Capacitance C ( pF) 1 0.8 0.6 0.4 0.2 5000 2000 1000 500 tOFF Coes tf Cres 200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tON tr 0 25 50 75 100 125 150 0 Collector to Emitter Voltage V CE ( V) Collector Current IC ( A) 日本インター株式会社 QS043-401M0060 (4/4) PDMB150B12 PDMB150B12C Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 300 (Typical) TC=25℃ TC=125℃ VCC=600V IC=150A VGE=±15V TC=25℃ 250 Switching Time t (μs) 2 Forward Current I F (A) toff ton 1 0.5 tr 200 150 tf 100 0.2 0.1 0.05 50 1 2 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance RG (Ω) Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Reverse Bias Safe Operating Area 500 200 100 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=150A TC=25℃ trr 200 100 50 R G=3.0Ω V GE=±15V TC≦125℃ Collector Current I C (A) 50 20 10 5 2 1 0.5 0.2 20 10 5 IRrM 2 0 150 300 450 600 750 900 0.1 0 400 800 1200 1600 -di/dt (A/μs) Collector to Emitter Voltage V CE ( V) Fig.11- Transient Thermal Impedance 1 (℃/W) 5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25℃ 2x10 -3 1x10 -3 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -5 Time t (s) 日本インター株式会社
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