QS043-402-20382(2/5)
IGBT Module-Dual
□ 回 路 図 : CIRCUIT
150 A, 1200V
□ 外 形 寸 法 図 : OUTLINE DRAWING
94.0 80 ±0.25
PDMB150BS12
12.0 11.0 12.0 11.0 12.0
(C2E1) 1
(E2) 2
(C1) 3
7(G2) 6(E2)
1 48.0 16.0 14.0 2 3
2-Ø6.5
7 6
5(E1) 4(G1)
5 4
3-M5
23.0
23.0
17.0
14
9
14
9
14
4-fasten tab #110 t=0.5 21.2 7.5 7
30 +1.0 - 0 .5
LABEL
4 18.0
4
Dimension:[mm] □ 最 大 定 格 : MAXIMUM RATINGS Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms (TC=25℃) Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
1,200 ±20 150 300 765 -40~+150 -40~+125 2,500 3(30.6) 2(20.4)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 150A,VGE= 15V VCE= 5V,IC= 150mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 4.0Ω RG= 10.0Ω VGE= ±15V Min. - - - 4.0 - - - - - Typ. - - 2.3 - 8,300 0.25 0.40 0.25 0.80 Max. 1.5 1.0 2.7 8.0 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF
Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time
μs
□フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 150 300 Min. - - Typ. 2.2 0.2 Max. 2.6 0.3 Unit A
DC 1ms
Test Condition IF= 150A,VGE= 0V IF= 150A,VGE= -10V di/dt= 300A/μs
Unit V μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tc測定点チップ直下) Min. - - Typ. - - Max. Unit 0.163 ℃/W 0.327
日本インター株式会社
QS043-402-20382(3/5)
PDMB150BS12
Fig.1- Output Characteristics (Typical)
300
Fig.2- Output Characteristics (Typical)
T C=25°C
300
T C=125°C VGE=20V 12V 11V
VGE=20V
250
12V
11V
250
15V
15V
Collector Current I C (A)
200
10V
Collector Current I C (A)
200
10V
150
150
9V
100
9V
100
8V 7V
8V
50
50
7V
0 0 1 2 3 4 5 0 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
T C=25°C
16 14 12 10 8 6 4 2 0
T C=125°C IC=75A 150A 300A
IC=75A
300A
Collector to Emitter Voltage V CE (V)
150A
12 10 8 6 4 2 0
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
14
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 100000
RL =4.0 TC=25°C
Collector to Emitter Voltage V CE (V)
30000
VGE=0V f=1MHZ T C=25°C Cies
Gate to Emitter Voltage VGE (V)
600 500 400 300 200 100 0 0
12 10 8 6 4 2 0 1000
Capacitance C (pF)
10000
3000 1000
VCE =600V 400V 200V
Coes
300
Cres
100
30
200
400
600
800
0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
日本インター株式会社
QS043-402-20382(4/5)
PDMB150BS12
Fig.7- Collector Current vs. Switching Time (Typical)
2 10
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
VCC=600V IC=150A VGE=±15V T C=25°C Resistive Load
1.6
VCC=600V RG=10 VGE=±15V T C=25°C Resistive Load
Switching Time t (µs)
1.2
tOFF
Switching Time t (µs)
3
1
toff
0.8
tf tON tr(VCE)
0 25 50 75 100 125 150
ton
0.3
tr(VCE )
tf
0.4
0
0.1
10
30
100
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.9- Collector Current vs. Switching Time
10 10
Fig.10- Series Gate Impedance vs. Switching Time
VCC=600V IC=150A VGE=±15V T C=125°C Inductive Load
3
Switching Time t (µs)
1
Switching Time t (µs)
tOFF tf
0.3
VCC=600V RG=10 VGE=±15V T C=125°C Inductive Load
5
2 1 0.5
toff ton
tON
0.1
0.2 0.1 0.05
tf tr(IC )
5 10 30 100
0.03
tr(Ic)
0.01
0
20
40
60
80
100
120
140
160
0.02
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.11- Collector Current vs. Switching Loss
40 200
Fig.12- Series Gate Impedance vs. Switching Loss
VCC=600V IC=150A VGE=±15V T C=125°C Inductive Load
Switching Loss ESW (mJ/Pulse)
Switching Loss ESW (mJ/Pulse)
30
VCC=600V RG=10 VGE=±15V T C=125°C Inductive Load
100
EON
EON
30
20
EOFF ERR
EOFF
10
10
ERR
0 0 50 100 150 200
3 5 10 30 70
Collector Current IC (A)
Series Gate Impedance RG ( )
日本インター株式会社
QS043-402-20382(5/5)
PDMB150BS12
300
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
250
T C=25°C
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF=150A T C=25°C T C=125°C trr
T C=125°C
Forward Current I F (A)
300
200
150
100
100
IRrM
30
50
0
0
1
2
3
4
10
0
600
1200
1800
Forward Voltage VF (V)
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area (Typical)
1000 500 200
RG=10 , VGE=±15V, T C=125°C
Collector Current I C (A)
100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 1000 1200 1400
Collector to Emitter Voltage V CE (V)
Fig.16- Transient Thermal Impedance
1
Transient Thermal Impedance Rth (J-C) (°C/W)
5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 10 -5
FRD IGBT
T C=25°C 1 Shot Pulse
10-4 10-3 10 -2 10 -1 1 10 1
Time t (s)
日本インター株式会社
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