PDMB200B12C2

IGBT MODULE Dual 200A 1200V MODULE Dual CIRCUIT PDMB200B12C2 PDMB200B12C2 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 320g Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PDMB200B12C2 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 2.04 Unit V V A W °C °C V N•m Typ. 1.9 16,600 0.25 0.40 0.25 0.80 Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque Module Base to Heat sink Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) C ies ｔr ｔon ｔf ｔoff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V Min. 4.0 − − − − Max. 4.0 1.0 2.4 8.0 0.45 0.7 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/µs Min. - Typ. 1.9 0.2 Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.125 0.24 IGBT MODULE Dual 200A 1200V MODULE 1200V Fig.1- Output Characteristics (Typical) 400 PDMB200B12C2 PDMB200B12C PDMB200B12C2 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=100A 400A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE ( V) 14 12 10 8 6 4 2 0 200A Collector Current I C ( A) 300 9V 200 8V 100 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ IC=100A 400A Collector to Emitter Voltage V CE ( V) Collector to Emitter Voltage V CE ( V) 14 RL=3Ω TC=25℃ 14 Gate to Emitter Voltage V GE ( V) 200A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 100 0 0 300 600 900 1200 200V 4 2 0 1500 0 4 8 12 16 20 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1.4 1.2 V GE =0V f=1MHZ TC=25 ℃ Cies VCC=600V RG= 2.0 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C ( pF) 1 0.8 0.6 0.4 0.2 0 10000 5000 2000 1000 500 tOFF Coes tf Cres 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tON tr 0 50 100 150 200 Collector to Emitter Voltage V CE (V) Collector Current IC ( A) IGBT MODULE Dual 200A 1200V MODULE PDMB200B12C2 PDMB200B12C2 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 400 (Typical) TC=25 ℃ TC=125 ℃ VCC=600V IC=200A VGE = ± 15V TC=25 ℃ toff ton Switching Time t ( μ s) 2 1 0.5 Forward Current I F ( A) tr 300 200 tf 0.2 0.1 0.05 100 1 2 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance R G ( Ω ) Forward Voltage V F ( V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 Fig.10- Reverse Bias Safe Operating Area 1000 500 200 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 IF=200A TC=25℃ R G=2Ω V GE=± 15V TC≦125℃ 200 100 50 Collector Current I C ( A) 100 50 20 10 5 2 1 0.5 0.2 trr 20 IRrM 10 5 0 200 400 600 800 1000 1200 0.1 0 400 800 1200 1600 -di/dt (A/μs) Collector to Emitter Voltage V CE ( V) Fig.11- Transient Thermal Impedance 1 (℃/W) 5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25℃ 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -5 Time t (s)