PDMB75B12

IGBT MODULE MODULE CIRCUIT Dual Dual 75A 1200V PDMB75B12 PDMB75B12 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB75B12 1200 +/ - 20 75 150 400 -40 to +150 -40 to +125 2500 3 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 8 ohm RG= 13 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 6300 0.25 0.40 0.25 0.80 Max. 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.00 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 75 150 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=150A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.3 0.6 PDMB75B12 Fig.1- Output Characteristics (Typical) 150 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25℃ 16 TC=25℃ IC=30A 150A VGE=20V 15V 125 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 75A Collector Current I C ( A) 100 9V 75 50 8V 25 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125℃ IC=30A 150A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE ( V) 14 RL=8Ω TC=25℃ 14 Gate to Emitter Voltage V GE ( V) 75A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 100 0 0 100 200 300 400 500 600 200V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 Fig.6- Collector Current vs. Switching Time (Typical) 1.6 1.4 1.2 VGE=0V f=1MHZ TC=25℃ Cies VCC=600V R G=13Ω VGE=±15V TC=25℃ Switching Time t (μs) Capacitance C ( pF) 5000 2000 1000 500 200 100 50 20 tOFF 1 0.8 0.6 0.4 0.2 0 0 25 50 75 Coes tf Cres tON tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage V CE ( V) Collector Current IC (A) PDMB75B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 (Typical) 150 VCC=600V IC=75A VGE=±15V TC=25℃ TC=25℃ TC=125℃ toff 125 Switching Time t (μs) Forward Current I F ( A) 2 1 0.5 ton tr 100 75 tf 0.2 0.1 0.05 50 25 0.02 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance RG (Ω) Forward Voltage V F ( V) Fig.9- Reverse Recovery Characteristics (Typical) 500 500 Fig.10- Reverse Bias Safe Operating Area (Typical) RG=13Ω VGE=±15V TC≦125℃ Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns) IF=75A TC=25 ℃ 200 200 100 trr 50 Collector Current I C (A) I RrM 0 150 300 450 100 50 20 10 5 2 1 0.5 0.2 0.1 0 400 800 1200 1600 20 10 5 2 1 -di/dt ( A/μ s) Collector to Emitter Voltage V CE (V) fig11-Tansient Thermal Impedance 5 Tansient Thermal Impedance Rth (J-C) (ﾟC/W) 2 1 5x10 2x10 -1 FRD IGBT -1 -1 1x10 5x10 2x10 1x10 5x10 2x10 -2 -2 -2 -3 Tc=25℃ 1 Shot Pulse -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t （ s）