QS043-402-20400(2/5)
IGBT Module-Dual
□ 回 路 図 : CIRCUIT
75 A,600V
□ 外 形 寸 法 図 : OUTLINE DRAWING
94 80 ± 0 .2 5 12 11 2
P DMB75E6
12
11
12 3
7 6
2-Ø 5.5 4 4-fasten tab #110 t= 0.5 8 6 23 4 12 17 35
5 4
(C2E1) 1
(E2) 2
(C1) 3
7(G2) 6(E2)
1
5(E1) 4(G1)
3-M5
23
23
17
16
7
16
7
16
30 +1 .0 - 0 .5
LABEL
Dimension:[mm] □ 最 大 定 格 : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
600 ±20 75 150 320 -40~+150 -40~+125 2,500 2 2(20.4)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 75A,VGE= 15V VCE= 5V,IC= 75mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 4.0Ω 12.0Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 3,200 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF
Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time
μs
□フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 75 150 Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A
DC 1ms
Test Condition IF= 75A,VGE= 0V IF= 75A,VGE= -10V di/dt= 150A/μs
Unit V μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tc測定点チップ直下) Min. - - Typ. - - Max. 0.38 0.80 Unit ℃/W
00
日本インター株式会社
QS043-402-20400(3/5)
P DMB75E6
Fig.1- Output Characteristics (Typical)
150
Fig.2- Output Characteristics (Typical)
T C=25°C
150
T C=125°C VGE=20V 12V
VGE=20V
125
12V
125
15V 11V
15V 11V
Collector Current I C (A)
Collector Current I C (A)
100
100
75
10V
75
10V
50
9V
50
9V
25
25
8V
8V
0 0 0 1 2 3 4 5
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16 14 12 10 8 6 4 2 0
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
T C=25°C
16 14 12 10 8 6 4 2 0
T C=125°C IC=30A 75A 150A
IC=30A 75A
150A
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 10000 30000
RL =4.0 TC=25°C
Collector to Emitter Voltage V CE (V)
VGE=0V f=1MHZ T C=25°C
Gate to Emitter Voltage VGE (V)
300 250 200 150 100 50 0
12 10
Capacitance C (pF)
Cies
3000
VCE =300V 200V 100V
8 6 4 2 0 300
Coes
1000
Cres
300
0
50
100
150
200
250
100 0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
00
日本インター株式会社
QS043-402-20400(4/5)
P DMB75E6
Fig.7- Collector Current vs. Switching Time (Typical)
1 10
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
VCC=300V IC=75A VGE=±15V T C=25°C Resistive Load
0.8
Switching Time t (µs)
Switching Time t (µs)
tOFF
0.6
VCC=300V RG=12 VGE=±15V T C=25°C Resistive Load
5
2 1 0.5
tf
0.4
toff ton tr (V CE) tf
0.2 0.1 0.05
0.2
tON tr(V CE)
0
0
50
100
150
0.02
10
30
100
300
Collector Current IC (A)
Series Gate Impedance R G ( )
Fig.9- Collector Current vs. Switching Time
10 10
Fig.10- Series Gate Impedance vs. Switching Time
VCC=300V IC=75A VGE=±15V T C=125°C Inductive Load
1
Switching Time t (µs)
Switching Time t (µs)
tOFF tON tf tr(Ic)
VCC=300V RG=12 VGE=±15V T C=125°C Inductive Load
5
2 1 0.5
0.1
toff ton tf tr (IC )
0.2 0.1 0.05
0.01
0.001
0
25
50
75
100
125
150
0.02
10
30
100
300
Collector Current IC (A)
Series Gate Impedance R G ( )
Fig.11- Collector Current vs. Switching Loss
8 100
Fig.12- Series Gate Impedance vs. Switching Loss
VCC=300V IC=75A VGE=±15V T C=125°C Inductive Load
Switching Loss ESW (mJ/Pulse)
Switching Loss ESW (mJ/Pulse)
6
VCC=300V RG=12 VGE=±15V T C=125°C Inductive Load
EON
30
EOFF
10
4
EON ERR
EOFF
3
2
ERR
1
0
0
25
50
75
100
125
150
0.3
10
30
100
300
Collector Current IC (A)
Series Gate Impedance RG ( )
00
日本インター株式会社
QS043-402-20400(5/5)
P DMB75E6
150
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
T C=25°C T C=125°C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
500
125
trr
200 100 50
IF=75A T C=25°C T C=125°C
Forward Current I F (A)
100
75
50
20 10 5
IRrM
25
0
0
1
2
3
4
2
0
75
150
225
300
375
450
Forward Voltage VF (V)
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area
500 200 100
RG=12 , VGE=±15V, T C
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