QS043-401M0061 (2/4)
IGBT Module-Dual
□ 回 路 図 : CIRCUIT
PDMB200B12C
200 A,1200V
PDMB200B12C2
□ 外 形 寸 法 図 : OUTLINE DRAWING
1 08 93 ± 0 .2 5 14 11 14 11 14
3-M6
7(G2) 6(E2)
4-Ø 6.5
12.0 11.0 12.0 11.0 12.0
94.0 80 ±0.25
15 6 48 ± 0 .2 5
62 11 13 20
(C2E1) 1
(E2) 2
(C1) 3
2-Ø6.5
6
48.0 16.0 14.0
5(E1) 4(G1)
5 4
5 4
3-M5
23.0
23.0
17.0
25
16 9 16
25
9 16
24
14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5
8
30 +1.0 - 0.5
23
LABEL
30 +1.0 - 0 .5
LABEL
PDMB200B12C
□ 最 大 定 格 : MAXIMUM RATINGS Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms (TC=25℃) Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor PDMB200B12C Rated
7
PDMB200B12C2
Dimension:[mm]
Value
7
4 18.0
6
4
1
2
3
7
1
2
3
7 6
Unit V V A W ℃ ℃ V(RMS)
1,200 ±20 200 400 960 -40~+150 -40~+125 2,500
3(30.6) N・m 3(30.6) PDMB200B12C2 2(20.4) (kgf・cm)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 200A,VGE= 15V VCE= 5V,IC= 200mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 3Ω RG= 2Ω VGE= ±15V Min. - - - 4.0 - - - - - Typ. - - 1.9 - 16,600 0.25 0.40 0.25 0.80 Max. 4.0 1.0 2.4 8.0 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF
Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time
μs
□フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time □熱 的 特性
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 200 400 Min. - - Typ. 1.9 0.2 Max. 2.4 0.3 Unit A
DC 1ms
Test Condition IF= 200A,VGE= 0V IF= 200A,VGE= -10V di/dt= 400A/μs
Unit V μs
: THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. - - Typ. - - Max. Unit 0.125 ℃/W 0.24
Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode
日本インター株式会社
QS043-401M0061 (3/4)
PDMB200B12 PDMB200B12C
Fig.1- Output Characteristics (Typical)
400
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25℃
16
TC=25℃ I C=100A 400A
V GE =20V 15V
12V
10V
Collector to Emitter Voltage V CE ( V)
14 12 10 8 6 4 2 0
200A
Collector Current I C ( A)
300
9V
200
8V
100
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE ( V)
Gate to Emitter Voltage V GE ( V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC=125℃ I C=100A 400A
Collector to Emitter Voltage V CE ( V)
Collector to Emitter Voltage V CE ( V)
14
RL=3Ω TC=25℃
14
Gate to Emitter Voltage V GE ( V)
200A
12 10 8 6 4 2 0
12 10 8
VCE =600V
300 6
400V
200 4
200V
100 0 0 300 600 900 1200 2 0 1500
0
4
8
12
16
20
Gate to Emitter Voltage V GE ( V)
Total Gate Charge Qg ( nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000 50000 20000
Fig.6- Collector Current vs. Switching Time (Typical)
1.4 1.2
VGE =0V f=1MHZ TC=25℃ Cies
V CC=600V R G= 2.0 Ω V GE =±15V TC=25℃
Switching Time t ( μs)
Capacitance C ( pF)
10000 5000 2000 1000 500
1 0.8 0.6 0.4 0.2 0
tOFF
Coes
tf
Cres
200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200
tON tr
0 50 100 150 200
Collector to Emitter Voltage V CE (V)
Collector Current IC ( A)
日本インター株式会社
QS043-401M0061 (4/4)
PDMB200B12 PDMB200B12C
Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10 5 400
(Typical)
TC=25℃ TC=125℃
VCC=600V I C=200A VGE =±15V TC=25℃
toff ton
Switching Time t ( μs)
2 1 0.5
Forward Current I F ( A)
tr
300
200
tf
0.2 0.1 0.05
100
1
2
5
10
20
50
100
200
0
0
1
2
3
4
Series Gate Impedance R G ( Ω)
Forward Voltage V F ( V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
Fig.10- Reverse Bias Safe Operating Area
1000 500 200
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
500
IF=200A TC=25℃
R G=2Ω V GE=±15V TC≦125℃
200 100 50
Collector Current I C ( A)
100 50 20 10 5 2 1 0.5 0.2
trr
20
IRrM
10 5
0
200
400
600
800
1000
1200
0.1
0
400
800
1200
1600
-di/dt (A/μs)
Collector to Emitter Voltage V CE ( V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10
-4
FRD IGBT
Transient Thermal Impedance Rth
(J-C)
TC=25℃ 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
10 -5
Time t (s)
日本インター株式会社
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