PDT20116

THYRISTOR MODULE 200A / 1600V PDT20116 PDH20116 OUTLINE DRAWING FEATURES * 108mm Short Size Case * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PDT TYPICAL APPLICATIONS * AC phase control PDH Maximum Ratings Parameter Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:280g Symbol VDRM VDSM VRRM VRSM Grade PDT/PDH20116 Unit V V Max Rated Max Value 1600 1700 1600 1700 arameter arameter Average Rectified Output Current RMS On-State Current Surge Forward Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IO(AV) IT(RMS) IFSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions Conditions 50Hz Half Sine Wave condition Tc=71°C 50 Hz Half Sine Wave,1cycle Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • Unit A A A A2s A/µs 200 314 4000 80000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.5 to 3.5 N•m M6 Screw 2.5 to 3.5 Electrical • Thermal Characteristics Characteristics Peak Off-State Current Peak Reverse Current Peak On-State Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj=125°C VRM= VRRM, Tj= 125°C ITM= 600A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 80 80 1.4 300 150 80 5 3 2 0.25 500 100 6 2 4 100 60 0.2 0.1 Unit mA mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm VGT VGD dv/dt tq V V V/µs µs µs µs µs mA ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=2/3VDRM, IG=300mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound °C/W PDT/PDH20116 OUTLINE DRAWING (Dimensions in mm) ON-STATE ON-STATE CURRENT VS. VOLTAGE PDT/PDH20116 5000 2000 1000 500 INSTANTANEOUS ON-STATE CURRENT (A) 200 100 50 20 Tj=25°C Tj=125°C 10 5 2 0 1 2 3 4 INSTANTANEOUS ON-STATE VOLTAGE (V) AVERAGE ON-STATE POWER DISSIPATION for 400 PDT/PDH20116 AVERAGE ON-STATE POWER DISSIPATION (W) 350 D.C. 300 θ =180° θ =180° 120° 120° 90° 60° 60° 30° 90° 250 200 30° 150 100 I TSM 0.02s 50 0 0 50 100 150 200 250 300 350 AVERAGE ON-STATE CURRENT (A) 180° θ CONDUCTION ANGLE 0° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz SINUSOIDAL CURRENT WAVEFORM) θ=180° PDT/PDH20116 200 AVERAGE ON-STATE CURRENT (A) 120° 160 90° 120 60° 80 30° 40 0 0 25 50 75 100 125 CASE TEMPERATURE (°C) 180° θ CONDUCTION ANGLE 0° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz RECTANGULAR CURRENT WAVEFORM) D.C. 350 PDT/PDH20116 300 AVERAGE ON-STATE CURRENT (A) 250 θ=180° 200 120° 90° 150 60° 100 30° 50 0 0 25 50 75 100 125 CASE TEMPERATURE (°C) - 40 C 25 C 12 5C P GM =5W f >50Hz duty< 20% SURGE CURRENT RATINGS f=50Hz,Half Sine Wave,Non-Repetitive,Tj=125℃ 4500 PDT/PDH20116 4000 3500 3000 SURGE ON-STATE CURRENT (A) 2500 2000 1500 1000 500 I TSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s)