IGBT MODULE MODULE
CIRCUIT
100A Chopper 100A 1200V
OUTLINE DRAWING
PRHMB100B12A PRHMB100B12A
2- fasten- tab No 110
Dimension(mm)
Approximate Weight : 220g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PRHMB100B12A
1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 3 2
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG= 10 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 8300 0.25 0.40 0.25 0.80
Max.
2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 100 200
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=200A/µs
Min.
-
Max.
2.4 0.3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.24 0.42
PRHMB100B12A
Fig.1- Output Characteristics (Typical)
200
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25℃
16
TC=25℃ IC=50A 200A
VGE=20V 15V
12V
10V
Collector to Emitter Voltage V CE (V)
14 12 10 8 6 4 2 0
100A
Collector Current I C (A)
150
9V
100
8V
50
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
800 700 600 500 400 16
IC=50A
200A
Collector to Emitter Voltage V CE (V)
100A
12 10 8 6 4 2 0
Collector to Emitter Voltage V CE (V)
14
R L=6Ω TC=25℃
14
Gate to Emitter Voltage VGE (V)
12 10 8
V CE=600V
300 6
400V
200 100 0 0 150 300 450 600 750
200V
4 2 0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000 20000 10000
Fig.6- Collector Current vs. Switching Time (Typical)
1.6
VGE=0V f=1MHZ TC=25℃ Cies
1.4 1.2
VCC=600V RG=10Ω VGE=±15V TC=25℃
Switching Time t (μs)
Capacitance C (pF)
5000 2000 1000 500 200
1 0.8 0.6 0.4
tOFF
Coes
tf
Cres
100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200
0.2 0
tON tr
0 25 50 75 100
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
PRHMB100B12A
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10 5
(Typical)
200
VCC=600V IC=100A VGE=±15V TC=25℃
TC=25℃
TC=125℃
toff ton tr
2 1
tf
0.5
Forward Current I F ( A)
200
150
Switching Time t (μs)
100
0.2 0.1 0.05
50
5
10
20
50
100
0
0
1
2
3
4
Series Gate Impedance RG (Ω)
Forward Voltage V F ( V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
Fig.10- Reverse Bias Safe Operating Area (Typical)
500 200 100
Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns)
I F=100A TC=25 ℃ trr
200
RG=10Ω VGE=±15V TC≦125℃
50
Collector Current I C (A)
200 300 400 500 600
100
50 20 10 5 2 1 0.5
20 10 5
IRrM
2 1 0 100
0.2 0.1 0 400 800 1200 1600
-di/dt ( A/μ s)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10 -1
FRD IGBT
Transient Thermal Impedance Rth
(J-C)
2x10 -1 1x10 -1 5x10 -2
2x10 -2 1x10 -2 5x10 -3
TC=25℃ 1 Shot Pulse
2x10 -3 10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
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