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PRHMB100E6

PRHMB100E6

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PRHMB100E6 - IGBT Module-Dual - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PRHMB100E6 数据手册
IGBT Module-Chopper □ 回 路 図 : CIRCUIT 100A, 600V □ 外 形 寸 法 図 : OUTLINE DRAWING 94 80 ± 0 .2 5 12 11 2 P RHMB100E6 12 11 12 3 7 6 2-Ø 5.5 4 12 (C2E1) 1 (E2) 2 (C1) 3 3-M5 23 23 17 16 7 16 7 16 4-fasten tab #110 t= 0.5 8 30 +1 .0 - 0 .5 LABEL 6 23 35 7(G2) 6(E2) 1 Dimension:[mm] □ 最 大 定 格 : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm) 600 ±20 100 200 400 -40~+150 -40~+125 2,500 2 2(20.4) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V,VGE= 0V VGE= ±20V,VCE= 0V IC= 100A,VGE= 15V VCE= 5V,IC= 100mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 3.0Ω 8.2Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 5,000 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time μs □フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 100 200 Test Condition IF= 100A,VGE= 0V IF= 100A,VGE= -10V di/dt= 200A/μs Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A DC 1ms Unit V μs □ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tc測定点チップ直下) Min. - - Typ. - - Max. 0.31 0.65 Unit ℃/W 00 日本インター株式会社 P RHMB100E6 Fig.1- Output Characteristics (Typical) 200 Fig.2- Output Characteristics (Typical) T C=25°C 200 T C=125°C VGE=20V 12V VGE=20V 180 160 12V 11V 180 160 15V 15V 11V Collector Current I C (A) 140 120 100 80 60 40 20 0 0 1 2 3 4 Collector Current I C (A) 140 120 100 80 60 40 10V 10V 9V 9V 8V 8V 20 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25°C 16 14 12 10 8 6 4 2 0 T C=125°C IC=50A 100A 200A IC=50A 100A 200A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 10000 30000 RL =3.0 TC=25°C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ T C=25°C Cies Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 3000 VCE =300V 200V 100V 8 6 4 2 0 400 Coes 1000 Cres 300 0 100 200 300 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 日本インター株式会社 P RHMB100E6 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=8.2 VGE=±15V T C=25°C Resistive Load 2 VCC=300V IC=100A VGE=±15V T C=25°C Resistive Load Switching Time t (µs) Switching Time t (µs) 0.6 1 0.5 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 25 50 75 100 125 150 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (µs) Switching Time t (µs) tOFF tON tf tr(Ic) VCC=300V RG=8.2 VGE=±15V T C=125°C Inductive Load 2 1 0.5 VCC=300V IC=100A VGE=±15V T C=125°C Inductive Load 0.1 toff ton tf tr(IC ) 0.2 0.1 0.05 0.01 0.001 0 25 50 75 100 125 150 0.02 3 10 30 100 300 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 8 300 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=100A VGE=±15V T C=125°C Inductive Load Switching Loss ESW (mJ/Pulse) 6 EOFF Switching Loss ESW (mJ/Pulse) VCC=300V RG=8.2 VGE=±15V T C=125°C Inductive Load 100 30 EON EOFF ERR 4 EON ERR 10 3 2 1 0 0 25 50 75 100 125 150 0.3 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) 00 日本インター株式会社 P RHMB100E6 200 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25°C T C=125°C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 160 trr 200 100 50 IF=100A T C=25°C T C=125°C Forward Current I F (A) 120 80 20 10 5 IRrM 40 0 0 1 2 3 4 2 0 100 200 300 400 500 600 Forward Voltage VF (V) -di/dt (A/µs) Fig.15- Reverse Bias Safe Operating Area 500 200 100 RG=8.2 , VGE=±15V, T C
PRHMB100E6 价格&库存

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