IGBT MODULE MODULE
CIRCUIT
Chopper Chopper 200A 1200V
OUTLINE DRAWING
PRHMB200B12 PRHMB200B12
2- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Approximate Weight : 320g
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PRHMB200B12
1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3 2
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 16600 0.25 0.40 0.25 0.80
Max.
4.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 200 400
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/µs
Min.
-
Max.
2.4 0.3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.125 0.24
PRHMB200B12
Fig.1- Output Characteristics (Typical)
400
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 ℃
16
TC=25 ℃ I C=100A 400A
VGE =20V 15V
12V
10V
Collector to Emitter Voltage V CE ( V)
14 12 10 8 6 4 2 0
200A
Collector Current I C ( A)
300
9V
200
8V
100
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE ( V)
Gate to Emitter Voltage V GE ( V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC=125 ℃ IC=100A 400A
Collector to Emitter Voltage V CE ( V)
Collector to Emitter Voltage V CE ( V)
14
RL=3Ω TC=25℃
14
Gate to Emitter Voltage V GE ( V)
200A
12 10 8 6 4 2 0
12 10 8
VCE =600V
300 6
400V
200 100 0 0 300 600 900 1200
200V
4 2 0 1500
0
4
8
12
16
20
Gate to Emitter Voltage V GE ( V)
Total Gate Charge Qg ( nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000 50000 20000
Fig.6- Collector Current vs. Switching Time (Typical)
1.4 1.2
V GE =0V f=1MHZ TC=25 ℃ Cies
VCC=600V RG= 2.0 Ω VGE = ± 15V TC=25 ℃
Switching Time t (μ s)
Capacitance C ( pF)
1 0.8 0.6 0.4 0.2 0
10000 5000 2000 1000 500
tOFF
Coes
tf
Cres
200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200
tON tr
0 50 100 150 200
Collector to Emitter Voltage V CE (V)
Collector Current IC ( A)
PRHMB200B12
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10 5 400
Fig.8- Forward Characteristics of Free Wheeling Diode (Typical)
TC=25 ℃ TC=125 ℃
VCC=600V IC=200A VGE = ± 15V TC=25 ℃
toff ton
Switching Time t (μ s)
2 1 0.5
Forward Current I F (A)
tr
300
200
tf
0.2 0.1 0.05
100
1
2
5
10
20
50
100
200
0
0
1
2
3
4
Series Gate Impedance R G ( Ω )
Forward Voltage V F ( V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000 1000
Fig.10- Reverse Bias Safe Operating Area (Typical)
500 200
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
500
IF=200A TC=25℃
R G=2 Ω V GE = ± 15V TC≦ 125 ℃
200 100 50
Collector Current I C ( A)
200 400 600 800 1000 1200
100 50 20 10 5 2 1 0.5 0.2
trr
20
IRrM
10 5
0
0.1
0
400
800
1200
1600
-di/dt (A/μs)
Collector to Emitter Voltage V CE ( V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10 -1 2x10
-1
FRD IGBT
(J-C)
1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10
-4
Transient Thermal Impedance Rth
TC=25℃ 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
10 -5
Time t (s)
很抱歉,暂时无法提供与“PRHMB200B12”相匹配的价格&库存,您可以联系我们找货
免费人工找货