NJG1106KB2-L1

NJG1106KB2 800MHz BAND LNA GaAs MMIC n GENERAL DESCRIPTION NJG1106KB2 is a low noise amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low noise figure of 1.3dB and low current consumption of 3mA at low supply voltage of 2.7V. NJG1106KB2 includes internal self-bias circuit and input DC blocking capacitor in a ultra small and ultra thin package of FLP6-B2. n FEATURES lLow voltage operation lLow current consumption lSmall signal gain lLow noise figure lHigh Input IP3 lHigh Output IP3 lUltra small & ultra thin package n PIN CONFIGURATION KB2 Type (Top View) PIN CONNECTION n PACKAGE OUTLINE NJG1106KB2 +2.7V typ. 2.5mA typ. 17dB typ. @f=820MHz 1.3dB typ. @f=820MHz -4dBm typ. @f=820.0+820.1MHz +13dBm typ. @f=820+820.1MHz FLP6-B2 (Mount Size: 2.1x2.0x0.75mm) 4 3 5 AMP 2 1.RFout 2.GND 3.EXTCAP 4.GND 5.GND 6.RFin 6 1 Package orientation mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1106KB2 n ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temp. Storage Temp. SYMBOL VDD Pin PD Topr Tstg VDD=2.7V Tj=125°C, mount on PCB FR4 20X20X0.2mm CONDITIONS (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6.0 +15 450 -40 ~ +85 -55 ~ +125 V dBm mW °C °C n ELECTRICAL CHARACTERISTICS PARAMETER Operating frequency Drain voltage Operating current Small signal gain Gain flatness Noise figure Pout at 1dB gain compression point Input 3rd order Intercept point Output 3rd order Intercept point RF Input port VSWR RF Output port VSWR SYMBOL freq VDD IDD Gain Gflat NF P-1dB IIP3 OIP3 VSWRi VSWRo VDD=2.7V, f=820MHz f=820.0+820.1MHz f=820.0+820.1MHz VDD=2.7V, f=820MHz VDD=2.7V, f=820MHz f=810~885MHz RF OFF (VDD=2.7V, f=820MHz, Ta=+25°C, Zs=Zl=50Ω) CONDITIONS MIN TYP MAX UNITS 800 2.5 15.0 -4.0 -8.0 +9.0 820 2.7 2.5 17.0 0.5 1.3 0.0 -4.0 +13.0 1.5 1.5 1000 5.5 3.4 19.0 1.0 1.5 2.0 2.0 MHz V mA dB dB dB dBm dBm dBm -2- NJG1106KB2 n TERMINAL INFORMATION Pin 1 Function RFout Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer to “RECOMMENDED CIRCUIT”) Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. An external bypass capacitor is required. (Please refer to “RECOMMENDED CIRCUIT”) RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. (Please refer to “RECOMMENDED CIRCUIT”) 2,4,5 GND 3 6 EXTCAP RFin -3- NJG1106KB2 n TYPICAL CHARACTERISTICS NJG1106KB2 Gain,NF vs. Freq VDD=2.7V,IDD=2.9mA,Ta=25 oC 20 Gain NJG1106KB2 S11,S21,S12,S22 vs. Freq VDD=2.7V, IDD=2.9mA, Ta=25 C 3.0 25 20 S21 o 50 40 30 20 S12 (dB) 10 0 S11 S22 S11,S21,S22 (dB) 15 2.5 15 10 5 0 -5 -10 -15 -20 S12 Gain (dB) 10 2.0 NF (dB) -10 -20 -30 -40 1500 -50 2000 5 NF 1.5 0 700 750 800 850 900 950 1.0 1000 -25 0 500 1000 freq (GHz) NJG1106KB2 Pout,Gain vs. Pin VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25 C 5 Gain o Freq (GHz) NJG1106KB2 Pout,IM3 vs. Pin o VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25 C 20 0 Pout 20 0 P-1dB=-0.5dBm Pout (dBm) Pout (dBm) -5 -10 -15 -20 -25 -45 15 -20 -40 -60 OIP3=+13.7dBm IIP3=-4.1dBm Pout 10 Gain (dB) -80 5.0 -40 -35 -30 -25 -20 -15 -10 -5 -100 -45 IM3 -40 -35 -30 -25 -20 -15 -10 -5 Pin (dBm) Pin (dBm) Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm -4- NJG1106KB2 n TYPICAL CHARACTERISTICS NJG1106KB2 Gain,NF vs. VDD Freq=820MHz,Ta=25 C 18.0 2.0 3.2 o NJG1106KB2 IDD vs. VDD Freq=820MHz,Ta=25 C o 17.8 Gain 1.8 3.1 Gain (dB) IDD (mA) NF (dB) 17.6 1.6 3.0 17.4 NF 1.4 2.9 17.2 1.2 2.8 17.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1.0 6.0 2.7 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDD (V) VDD (V) NJG1106KB2 OIP3,IIP3 vs. VDD Freq=820+820.1MHz, Ta=25oC 20 IIP3 NJG1106KB2 OIP3,IIP3 vs. Freq VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25 oC 0 20 0 18 -2 18 -2 OIP3 (dBm) IIP3 (dBm) OIP3(dBm) 16 OIP3 -4 16 IIP3 -4 14 -6 14 OIP3 -6 12 -8 12 -8 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -10 6.0 10 800 820 840 860 880 -10 900 VDD (V) freq (MHz) Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm -5- IIP3 (dBm) NJG1106KB2 n TYPICAL CHARACTERISTICS NJG1106KB2 Gain,NF vs. Ta VDD=2.7V,Freq=820MHz 20 Gain NJG1106KB2 IDD vs. Ta VDD=2.7V,Freq=820MHz 5.0 4.0 18 4.0 3.5 Gain (dB) IDD (mA) NF (dB) 16 3.0 3.0 14 2.0 2.5 12 NF 1.0 10 -50 0 50 0.0 100 Ta ( C) o 2.0 -50 0 Ta ( oC) 50 100 NJG1106KB2 OIP3,IIP3 vs. Ta VDD=2.7V,Freq=820+820.1MHz 20 0 18 -2 OIP3 (dBm) 16 -4 IIP3 (dBm) IIP3 14 OIP3 -6 12 -8 Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm 10 -50 0 Ta ( C) o 50 -10 100 -6- NJG1106KB2 n TYPICAL CHARACTERISTICS NJG1106KB2 S11 vs. Freq(to 20GHz) VDD=2.7V, IDD=2.9mA, Ta=25 C 25 20 15 10 25 20 15 10 o NJG1106KB2 S22 vs. Freq(to 20GHz) VDD=2.7V, IDD=2.9mA, Ta=25 C o S11 (dB) 0 -5 -10 -15 -20 -25 0 5 10 15 20 S22 (dB) 5 5 0 -5 -10 -15 -20 -25 0 5 10 15 20 Freq (GHz) Freq (GHz) NJG1106KB2 S21 vs. Freq(to 20GHz) VDD=2.7V, IDD=2.9mA, Ta=25 C 25 20 15 10 50 40 30 20 o NJG1106KB2 S12 vs. Freq(to 20GHz) VDD=2.7V, IDD=2.9mA, Ta=25 oC S21 (dB) 0 -5 -10 -15 -20 -25 0 5 10 15 20 S12 (dB) 5 10 0 -10 -20 -30 -40 -50 0 5 10 15 20 Freq (GHz) Freq (GHz) -7- NJG1106KB2 n TYPICAL CHARACTERISTICS Scattering Parameter Table VDD=2.7V, IDD=2.9mA, Zo=50Ω S11 S21 Freq mag ang mag ang (MHz) (units) (deg) (units) (deg) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.996 0.995 0.993 0.982 0.964 0.947 0.930 0.914 0.897 0.884 0.874 0.860 0.851 0.838 0.831 0.822 0.815 0.809 0.803 0.796 -1.8 -4.8 -7.2 -9.6 -11.7 -13.9 -15.5 -17.3 -18.7 -20.2 -21.5 -22.6 -23.8 -24.9 -26.1 -27.0 -28.2 -29.7 -30.6 -31.8 1.298 1.846 2.029 2.056 2.029 1.964 1.892 1.816 1.733 1.659 1.582 1.513 1.449 1.385 1.330 1.279 1.235 1.194 1.153 1.120 -142.2 -164.1 179.1 165.7 155.1 145.6 137.5 130.0 123.2 117.0 111.1 105.8 100.7 96.1 91.4 87.0 83.0 78.9 75.2 71.8 S12 mag (units) 0.005 0.003 0.006 0.006 0.007 0.006 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.014 0.014 0.016 0.017 0.018 0.019 ang (deg) 70.0 -6.6 38.5 36.0 47.8 54.7 55.8 60.4 62.5 61.0 69.4 70.7 72.6 80.1 77.4 84.4 85.1 90.7 87.7 91.9 S22 mag (units) 0.967 0.953 0.942 0.939 0.931 0.928 0.918 0.916 0.906 0.903 0.898 0.893 0.886 0.883 0.878 0.874 0.871 0.869 0.865 0.864 ang (deg) -2.3 -3.7 -4.9 -6.1 -7.3 -8.5 -9.7 -10.9 -12.2 -13.4 -14.7 -16.1 -17.3 -18.9 -20.0 -21.3 -22.7 -24.1 -25.4 -26.8 4 3 1000pF 5 AMP 2 Network Analyzer Port1 6 1 Network Analyzer Port2 Reference Plane Note VDD (=2.8V) is supplied through “BIAS CONNECT (PORT2)” of Network Analyzer. -8- NJG1106KB2 n RECOMMENDED CIRCUIT (f=810~885MHz) ( Top View ) 4 3 C3 5 L2 RF Input L1 6 2 AMP L3 1 L4 C1 RF Output VDD=2.7V C2 -9- NJG1106KB2 n RECOMMENDED PCB DESIGN (Top View) C3 RF IN L2 NJG1106 L4 C1 L3 C2 PCB SIZE: 14.0x14.0mm PCB: FR4, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω) RF OUT L1 Parts List (f=810~885MHz) Parts ID L1 L2 L3 L4 C1 C2, C3 Constant 82nH 33nH 39nH 12nH 4pF 1000pF Comment TAIYO-YUDEN HK1005 Series TAIYO-YUDEN HK1608 Series TAIYO-YUDEN HK1005 Series TAIYO-YUDEN HK1005 Series MURATA GRM36 Series MURATA GRM36 Series NOTES: 1. Please use L1 to stabilize amplifier. This element pull input impedance down at low frequency region (up to 400MHz). 2. Please use chip inductor which has low resistance at input circuit. (A low resistance inductor of 1608 size (1.6mm x 0.8mm) is used in the circuit example above.) Because any losses at input circuit cause NF degradation. 3. The capacitor C3 is a bypass capacitor connected with self-biasing resistor. The small signal gain can be controlled by this capacitor. (Gain=18.5dB @ C3=30pF) - 10 - NJG1106KB2 n PACKAGE OUTLINE (FLP6-B2) 2.0±0.1 6 5 4 0 .2 0.75±0.05 +0.1 0.15 -0.05 1 . 7 ±0 . 1 1 0.65 2 0.65 3 0.2 2 . 1 ±0 . 1 0.1 +0.1 0.2 -0.05 Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 6.5mg 0.1 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • D o NOT eat or put into mouth. • D o NOT dispose in fire or break up this product. • D o NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 11 -