NJG1107HB3

NJG1107HB3 LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1107HB3 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input DC blocking capacitor. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra small and ultra thin package of USB8-B3 is adopted. nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain lLow noise figure lHigh Input IP3 lUltra small & ultra thin package nPIN CONFIGURATION HB3 Type (Top View) nPACKAGE OUTLINE NJG1107HB3 +2.7V typ. 2.5mA typ. 17dB typ. @f=1.575GHz 1.1dB typ. @f=1.575GHz -4.0dBm typ. @f=1.575+1.5751GHz USB8-B3 (Mount Size: 1.5x1.5x0.75mm) 4 5 3 6 AMP 2 Pin Connection 1.RFOUT 2.N/C 3.EXTCAP 4.N/C 5.N/C 6.GND 7. RFIN 8. N/C 7 8 1 Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1107HB3 nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temp. Storage Temp. SYMBOL VDD Pin PD Topr Tstg VDD=2.7V At on PCB board CONDITIONS (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNIT 6.0 V +15 135 -40~+85 -55~+150 dBm mW °C °C nELECTRICAL CHARACTERISTICS (VDD=2.7V, f=1.575GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT 1.57 1.575 1.58 Operating Frequency freq1 GHz Drain Voltage Operating Current Small Signal Gain Noise Figure Pin at 1dB Gain Compression point Input 3rd Order Intercept Point RF Input Port VSWR RF Output Port VSWR VDD IDD Gain NF P-1dB IIP3 VSWRi VSWRo f=1.575+1.5751GHz RFin=-35dBm 2.5 RF OFF 15.0 -20.0 2.7 2.5 17.0 1.1 -16.0 5.5 3.2 1.3 2.0 2.0 V mA dB dB dBm dBm -6.0 - -4.0 1.6 1.6 -2- NJG1107HB3 nPIN CONFIGURATION Pin 1 Function Rfout Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. Neutral terminal. Should be connected to the ground. An external bypass capacitor is required. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. 2,4,5,8 N/C 3 EXTCAP 6 7 GND Rfin -3- NJG1107HB3 nTYPICAL CHARACTERISTICS NF vs. frequency (V 5 DD k factor vs. frequency (V 20 DD =2.7V, Ta=25 C) o =2.7V, Ta=25 C) o 4 15 NF (dB) k factor NF 3 10 2 5 1 0 1400 0 1450 1500 1550 1600 1650 1700 0 5 10 15 20 frequency (MHz) frequency (GHz) Pout vs. Pin (V 10 5 0 DD Pout, IM3 vs. Pin o =2.7V, f=1575MHz, Ta=25 C) 20 (V DD =2.7V, f1=1575MHz, f2=f1+100kHz, Ta=25 C) o Pout, IM3 (dBm) 0 Pout -20 Pout (dBm) -5 Pout -10 -15 -20 -40 -60 -80 IM3 IIP3=-2.8dBm -25 -30 -40 -35 P-1dB(IN)=-14.8dBm -30 -25 -20 -15 -10 -5 0 -100 -40 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) Pin (dBm) Gain, NF vs. V o DD 7 6 -6 -8 P-1dB(IN) vs. V (f=1575MHz, Ta=25 C) o DD (f=1575MHz, Ta=25 C) 19 18 17 Gain P-1dB(IN) (dBm) 5 -10 -12 -14 -16 -18 -20 2.5 3 3.5 4 4.5 5 5.5 Gain (dB) 16 15 14 4 3 2 NF 13 12 2.5 3 3.5 4 4.5 5 5.5 1 0 NF (dB) V DD ( V) V DD ( V) -4- NJG1107HB3 nTYPICAL CHARACTERISTICS Gain, NF vs. Temperature (V 19 18 17 DD P-1dB(IN) vs. Temperature (V 4 3.5 3 2.5 2 -11 -12 -13 -14 -15 -16 -17 -18 -19 -50 0 o DD =2.7V, f=1575MHz) =2.7V, f=1575MHz) Gain 15 14 13 12 11 -50 NF 1.5 1 0.5 0 100 0 50 o NF (dB) 16 P-1dB(IN) (dBm) Gain (dB) 50 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature (V 16 15 14 DD I 3 5 DD v s. Temperature (V DD =2.7V, f1=1575MHz, f2=f1+100kHz, Pin=-35dBm) =2.7V, RF=OFF) OIP3 2 4 1 OIP3 (dBm) ( mA) DD 13 12 11 10 9 8 -50 0 -1 IIP3 (dBm) 3 IIP3 -2 -3 2 I 1 -4 -5 100 0 -50 0 50 o 0 o 50 100 Temperature ( C) Temperature ( C) -5- NJG1107HB3 nTYPICAL CHARACTERISTICS S11,S22 S21,S12 VSWR Zin, Zout S11, S22(~20GHz) -6- S21, S12(~20GHz) NJG1107HB3 nTEST CIRCUIT (Top View) N/C 4 3 EXTCAP 5 N/C C3 1000pF 6 GND 2 N/C RF Input L1 27nH L2 15nH L4 18nH C1 6pF RF Output 7 RFIN N/C 1 8 RFOUT L3 12nH C2 1000pF VDD=2.7V nRECOMMENDED PCB DESIGN (Top View) Parts ID L1, L3, L4 L2 C1~C3 Comment TAIYO-YUDEN (HK1005) MATUSHITA (ELJRF) MURATA (GRP15) C3 RF Input L2 L1 L4 C2 C1 L3 VDD RF Output PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50Ω) PCB SIZE=14.0mmX14.0mm -7- NJG1107HB3 nPACKAGE OUTLINE (USB8-B3) (TOP VIEW) (SIDE VIEW) 1pin INDEX 0.038±0.01 0.14±0.05 0.8±0.05 0.75 1.5±0.05 0.5±0.1 0.5±0.1 R0.075 1 2 3 0. 2 ± 0. 1 1 .5 ± 0 .0 5 0.3±0.05 8 0 .3 ± 0 . 1 4 0 . 2 ± 0 .1 7 6 5 0.2±0.05 0.4±0.1 TERMINAL TREAT PCB Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :4mg 0.2±0.05 (BOTTOM VIEW) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages . [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8-