NJG1135MD7

NJG1135MD7 CDMA DUAL BAND LNA GaAs MMIC ! GENERAL DESCRIPTION The NJG1135MD7 is a GaAs LNA MMIC designed for CDMA2000 dual band (Cellular and PCS) application. The NJG1135MD7 has LNA pass-through function to select high gain mode or low gain. The NJG1135MD7 achieved high IIP3 and low noise figure at the high gain mode, and low current consumption at the low gain mode. An ultra-small and ultra-thin EQFN14-D7 package is adopted. ! FEATURES "Low voltage operation "Low control voltage operation [LNA high gain mode] "High input IP3 "High gain "Low noise figure [LNA low gain mode] "Low current consumption "High input IP3 " Ultra-small and ultra-thin package ! PIN CONFIGURATION (Top View) 11 12 13 14 1 2 3 4 10 9 8 7 6 5 ! PACKAGE OUTLINE NJG1135MD7 +2.8V typ. +1.8V min. +10dBm typ. +8dBm typ. +16dB typ. 1.4dB typ. @ f=880MHz @ f=1960MHz @ f=880MHz / 1960MHz @ f=880MHz / 1960MHz 30uA typ. +19dBm typ. @ f=880MHz +17dBm typ. @ f=1960MHz EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ., Lead and Halogen-Free) Cellular PCS Pin Connection 1. GND 2. VCTL2 3. VCTL1 4. GND 5. RFOUT1 6. RFOUT2 7. GND 8. GND 9. GND 10. GND 11. GND 12. RFIN2 13. RFIN1 14. GND ! TRUETH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL1 L L H H VCTL2 L H L H Cellular band LNA Bypass OFF ON ON OFF OFF ON ON OFF PCS band LNA Bypass OFF ON OFF ON ON OFF ON OFF Note: Specifications and description listed in this datasheet are subject to change without notice. Ver. 2008-10-31 -1- NJG1135MD7 ! ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω) PARAMETERS Supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL Pin PD Topr Tstg VCTL1, VCTL2 terminal VDD=2.8V 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150°C CONDITIONS RATINGS 5.0 5.0 +15 1300 -40~+85 -55~+150 UNITS V V dBm mW °C °C ! ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) (General Conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω) PARAMETERS Operating voltage Control voltage (High) Control voltage (Low) Operating current1 (Cellular Band High Gain mode) SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 IDD3 ICTL1 ICTL2 CONDITIONS MIN 2.65 1.8 -0.3 TYP 2.8 2.8 0 10 10 30 17 17 MAX 2.95 2.95 0.3 14 14 60 30 30 UNITS V V V mA mA μA μA μA Operating current2 (PCS Band High Gain mode) Operating current3 (LNA all off mode) RF OFF, VCTL1=0V, VCTL2=2.8V RF OFF, VCTL1=2.8V, VCTL2=0V RF OFF, VCTL1=0V, VCTL2=0V RF OFF, VCTL1=2.8V RF OFF, VCTL2=2.8V - Control current1 Control current2 -2- NJG1135MD7 ! ELECTRICAL CHARACTERISTICS 2 (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETERS Small signal gain 1 Noise figure 1 1dB gain compression input power 1 3rd order input intercept point 1 RF IN VSWR 1 RF OUT VSWR 1 SYMBOL Gain1 NF1 P-1dB_1 IIP3_1 VSWRi _1 VSWRo_1 f1=fRF, f2=fRF+100kHz, Pin=-25dBm CONDITIONS Exclude PCB, Connector Losses (input and output) 0.11dB Exclude PCB, Connector Losses (input) 0.06dB MIN 14.5 -8 +7 - TYP 16.0 1.4 -4 +10 1.5 1.5 MAX 1.8 2.0 2.0 UNITS dB dB dBm dBm ! ELECTRICAL CHARACTERISTICS 3 (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETERS Small signal gain 2 Noise figure 2 1dB gain compression input power 2 3rd order input intercept point 2 RF IN VSWR 2 RF OUT VSWR 2 SYMBOL Gain2 NF2 P-1dB_2 IIP3_2 VSWRi _2 VSWRo_2 f1=fRF, f2=fRF+100kHz, Pin=-12dBm CONDITIONS Exclude PCB, Connector Losses (input and output) 0.11dB Exclude PCB, Connector Losses (input and output) 0.11dB MIN -4.0 +3.5 +15 - TYP -2.5 2.5 +10.5 +19 2.0 1.5 MAX 5.0 2.5 2.0 UNITS dB dB dBm dBm -3- NJG1135MD7 ! ELECTRICAL CHARACTERISTICS 4 (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=2.8V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETERS Small signal gain 3 Noise figure 3 1dB gain compression input power 3 3rd order input intercept point 3 RF IN VSWR 3 RF OUT VSWR 3 SYMBOL Gain3 NF3 P-1dB_3 IIP3_3 VSWRi _3 VSWRo_3 f1=fRF, f2=fRF+100kHz, Pin=-25dBm CONDITIONS Exclude PCB, Connector Losses (input and output) 0.22dB Exclude PCB, Connector Losses (input) 0.12dB MIN 14.5 -10 +5 - TYP 16.0 1.4 -6 +8 2.3 1.5 MAX 1.8 3.1 2.2 UNITS dB dB dBm dBm ! ELECTRICAL CHARACTERISTICS 5 (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETERS Small signal gain 4 Noise figure 4 1dB gain compression input power 4 3rd order input intercept point 4 RF IN VSWR 4 RF OUT VSWR 4 SYMBOL Gain4 NF4 P-1dB_4 IIP3_4 VSWRi _4 VSWRo_4 f1=fRF, f2=fRF+100kHz, Pin=-12dBm CONDITIONS Exclude PCB, Connector Losses (input and output) 0.22dB Exclude PCB, Connector Losses (input and output) 0.22dB MIN -5.0 +1.5 +13 - TYP -3.5 4.0 +8.5 +17 2.3 1.5 MAX 5.5 2.9 2.0 UNITS dB dB dBm dBm -4- NJG1135MD7 ! TERMINAL INFOMATION No. 1 SYMBOL GND Ground terminal. Control port 2. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of cellular band LNA, and set to –0.3V~+0.3V of logical low level for low gain mode of cellular band LNA. Control port 1. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of PCS band LNA, and set to –0.3V~+0.3V of logical low level for low gain mode of PCS band LNA. Ground terminal. RF output terminal of PCS band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required. RF output terminal of cellular band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required. Ground terminal. This terminal is not connected with internal circuit. DESCRIPTION 2 VCTL2 3 VCTL1 4 GND 5 RFOUT1 6 RFOUT2 7 GND 8 GND Ground terminal. 9 GND Ground terminal. This terminal is not connected with internal circuit. 10 GND Ground terminal. This terminal is not connected with internal circuit. 11 GND Ground terminal. RF input matching required. RF input matching required. terminal of cellular band signal. RF signal is input through external circuit connected to this terminal. A DC blocking capacitor is not terminal of PCS band signal. RF signal is input through external circuit connected to this terminal. A DC blocking capacitor is not 12 RFIN2 13 RFIN1 14 GND Ground terminal. This terminal is not connected with internal circuit. Notes: 1) Ground terminal (No.1, 4, 8, and 11) should be connected with the ground plane as close as possible for good RF performance, because distance to GND makes parasitic inductance. -5- NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) Pout vs. Pin f=880MHz Gain, IDD vs. Pin f=880MHz 20 20 Gain 15 16 10 14 Pout (dBm) 10 12 -10 IDD 5 -20 P-1dB(IN)=-4.5dBm P-1dB(IN)=-4.5dBm 10 -30 -40 -30 -20 -10 0 10 0 -40 -30 -20 -10 0 8 10 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin f1=880MHz, f2=f1+100kHz OIP3, IIP3 vs. frequency f1=840~920MHz, f2=f1+100kHz, Pin=-25dBm 40 20 26 25 Pout 24 OIP3 14 13 12 Pout, IM3 (dBm) 0 -20 -40 -60 -80 OIP3 (dBm) 23 22 21 20 19 IIP3 IM3 10 9 8 7 IIP3=+9.8dBm -100 -30 -20 -10 0 10 20 6 18 840 850 860 870 880 890 900 910 920 Pin (dBm) frequency (MHz) Gain, NF vs. frequency f=750~1000MHz 18 17 16 Gain 4 3.5 3 Gain (dB) 14 13 12 11 10 750 800 850 900 950 NF 2 1.5 1 0.5 0 1000 frequency (MHz) -6- NF (dB) 15 2.5 IIP3 (dBm) 11 IDD (mA) 0 Gain (dB) Pout NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) -7- NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit) Gain, NF vs. Temperature f=880MHz P-1dB(IN) vs. Temperature f=880MHz 18 17 16 Gain 4 3.5 -2 P-1dB(IN) -4 Gain (dB) 15 14 13 12 11 10 -40 -20 0 20 40 60 o 2.5 2 1.5 NF 1 0.5 80 0 100 P-1dB(IN) (dBm) 3 NF (dB) -6 -8 -10 -12 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature f1=880MHz, f2=f1+100kHz, Pin=-25dBm VSWRi, VSWRo vs. Temperature f=880MHz 27 OIP3 26 25 24 23 22 21 -40 13 12 3 2.5 OIP3 (dBm) 11 VSWRi, VSWRo IIP3 (dBm) 10 9 8 2 VSWRi 1.5 VSWRo IIP3 -20 0 20 40 60 o 80 7 100 1 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) IDD, ICTL2 vs. Temperature RF off K factor vs. frequency f=50M~20GHz 14 12 10 IDD 35 30 25 20 15 ICTL2 (uA) IDD (mA) 8 6 4 2 0 -40 ICTL2 20 15 10 5 0 100 K factor 10 5 Ta=-40oC Ta=-20 C Ta=0 C o o Ta=25 C Ta=60 C Ta=85 C o o o 0 -20 0 20 40 60 o 80 0 5 10 15 20 Temperature ( C) frequency (GHz) -8- NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) Pout vs. Pin Gain, IDD vs. Pin f=880MHz f=880MHz 10 0 250 0 -2 Gain 200 Pout (dBm) -20 -6 IDD 100 -30 P-1dB(IN)=-+13.0dBm -8 P-1dB(IN)=+13.0dBm 50 -40 -30 -20 -10 0 10 20 -10 -30 -20 -10 0 10 0 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin f1=880MHz, f2=f1+100kHz OIP3, IIP3 vs. frequency f1=840~920MHz, f2=f1+100kHz, Pin=-12dBm 40 20 26 25 24 Pout IIP3 26 25 24 Pout, IM3 (dBm) 0 -20 -40 -60 OIP3 (dBm) 23 22 21 20 19 OIP3 22 21 20 19 IM3 -80 IIP3=+23.5dBm -100 -20 -10 0 10 20 30 18 18 840 850 860 870 880 890 900 910 920 Pin (dBm) frequency (MHz) Gain, NF vs. frequency f=750~1000MHz 0 -1 -2 Gain 8 7 6 Gain (dB) -4 -5 -6 -7 -8 750 800 850 900 NF 4 3 2 1 0 1000 950 frequency (MHz) NF (dB) -3 5 -9- IIP3 (dBm) 23 IDD (uA) -10 Gain (dB) Pout -4 150 NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) - 10 - NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit) Gain, NF vs. Temperature f=880MHz P-1dB(IN) vs. Temperature f=880MHz 0 -1 -2 Gain 8 7 16 P-1dB(IN) 14 P-1dB(IN) (dBm) 6 5 Gain (dB) -3 -4 -5 -6 -7 -8 -40 -20 0 20 40 60 o 12 10 8 6 4 -40 4 NF 3 2 1 80 0 100 NF (dB) -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature f1=880MHz, f2=f1+100kHz, Pin=-12dBm VSWRi, VSWRo vs. Temperature f=880MHz 28 26 24 OIP3 28 26 3 VSWRi, VSWRo 24 2.5 OIP3 (dBm) IIP3 (dBm) 22 20 18 16 14 -40 IIP3 22 20 18 16 14 100 VSWRi 2 1.5 VSWRo -20 0 20 40 60 o 80 1 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) IDD vs. Temperature RF off K factor vs. frequency f=50M~20GHz 60 50 20 15 40 IDD (uA) 30 20 K factor IDD 10 5 10 0 -40 0 -20 0 20 40 60 o Ta=-40oC Ta=-20 C Ta=0 C o o Ta=25 C Ta=60 C Ta=85 C o o o 80 100 0 5 10 15 20 Temperature ( C) frequency (GHz) - 11 - NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) Pout vs. Pin f=1960MHz Gain, IDD vs. Pin f=1960MHz 20 20 Gain 14 10 15 12 Pout (dBm) Gain (dB) 10 10 -10 -20 P-1dB(IN)=-6.3dBm 5 IDD P-1dB(IN)=-6.3dBm 8 -30 -40 -30 -20 -10 0 10 0 -40 -30 -20 -10 0 6 10 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin f1=1960MHz, f2=f1+100kHz OIP3, IIP3 vs. frequency f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-25dBm 40 20 26 25 14 13 OIP3 12 Pout, IM3 (dBm) 0 -20 -40 -60 -80 Pout 24 OIP3 (dBm) 23 22 21 20 19 IIP3 10 9 8 7 1.92 1.94 1.96 1.98 2 6 IM3 IIP3=+8.2dBm -100 -30 -20 -10 0 10 20 18 1.9 Pin (dBm) frequency (GHz) Gain, NF vs. frequency f=1.8~2.1GHz 18 17 16 Gain 4 3.5 3 Gain (dB) 14 13 12 11 10 1.8 1.85 1.9 1.95 2 2.05 NF 2 1.5 1 0.5 0 2.1 frequency (GHz) - 12 - NF (dB) 15 2.5 IIP3 (dBm) 11 IDD (mA) 0 Pout NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) - 13 - NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit) Gain, NF vs. Temperature f=1960MHz P-1dB(IN) vs. Temperature f=1960MHz 18 17 16 Gain 4 3.5 -2 -4 Gain (dB) 15 14 13 12 11 10 -40 -20 0 20 40 60 o 2.5 P-1dB(IN) (dBm) 3 NF (dB) -6 P-1dB(IN) -8 2 1.5 NF 1 0.5 80 0 100 -10 -12 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature f1=1960MHz, f2=f1+100kHz, Pin=-25dBm VSWRi, VSWRo vs. Temperature f=1960MHz 26 OIP3 25 24 23 22 21 20 -40 IIP3 12 11 3 2.5 VSWRi, VSWRo OIP3 (dBm) 10 VSWRi 2 9 8 7 6 100 IIP3 (dBm) 1.5 VSWRo -20 0 20 40 60 o 80 1 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) IDD, ICTL1 vs. Temperature RF off K factor vs. frequency f=50M~20GHz 14 12 10 IDD 35 30 25 20 Ta=-40oC Ta=-20 C Ta=0 C o o Ta=25 C Ta=60 C Ta=85 C o o o 15 ICTL1 (uA) IDD (mA) 8 6 ICTL1 4 2 0 -40 20 15 10 5 0 100 K factor 10 5 0 -20 0 20 40 60 o 80 0 5 10 15 20 Temperature ( C) frequency (GHz) - 14 - NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) Pout vs. Pin f=1960MHz Gain, IDD vs. Pin f=1960MHz 10 0 250 0 -2 Gain 200 Pout (dBm) -20 -6 100 -30 P-1dB(IN)=+9.0dBm -8 IDD P-1dB(IN)=+9.0dBm 50 -40 -30 -20 -10 0 10 20 -10 -30 -20 -10 0 10 0 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin f1=1960MHz, f2=f1+100kHz OIP3, IIP3 vs. frequency f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-12dBm 40 20 22 21 Pout 20 22 21 20 Pout, IM3 (dBm) 0 -20 -40 -60 -80 OIP3 (dBm) 18 17 16 15 OIP3 18 17 16 15 1.92 1.94 1.96 1.98 2 14 IM3 IIP3=+19.5dBm -100 -20 -10 0 10 20 30 14 1.9 Pin (dBm) frequency (GHz) Gain, NF vs. frequency f=1.8~2.1GHz 0 -1 -2 9 8 7 Gain (dB) -4 -5 -6 -7 -8 1.8 1.85 1.9 1.95 2 2.05 NF 5 4 3 2 1 2.1 frequency (GHz) NF (dB) -3 Gain 6 - 15 - IIP3 (dBm) 19 IIP3 19 IDD (uA) -10 Gain (dB) Pout -4 150 NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) - 16 - NJG1135MD7 ! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit) Gain, NF vs. Temperature f=1960MHz P-1dB(IN) vs. Temperature f=1960MHz 0 -1 -2 8 7 16 14 P-1dB(IN) (dBm) 6 Gain NF 5 Gain (dB) -3 -4 -5 -6 -7 -8 -40 12 10 8 6 4 -40 P-1dB(IN) 4 3 2 1 -20 0 20 40 60 o 80 0 100 NF (dB) -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature f1=1960MHz, f2=f1+100kHz, Pin=-12dBm VSWRi, VSWRo vs. Temperature f=1960MHz 24 22 20 26 24 3 18 16 14 12 10 -40 IIP3 20 18 16 14 12 100 IIP3 (dBm) OIP3 VSWRi, VSWRo 22 2.5 VSWRi OIP3 (dBm) 2 1.5 VSWRo -20 0 20 40 60 o 80 1 -40 -20 0 20 40 60 o 80 100 Temperature ( C) Temperature ( C) IDD vs. Temperature RF off K factor vs. frequency f=50M~20GHz 60 50 20 15 40 IDD (uA) 30 20 K factor IDD 10 5 10 0 -40 0 -20 0 20 40 60 o Ta=-40oC Ta=-20 C Ta=0 C o o Ta=25oC Ta=60 C Ta=85 C o o 80 100 0 5 10 15 20 Temperature ( C) frequency (GHz) - 17 - NJG1135MD7 ! APPLICATION CIRCUIT V DD 2.8V L5 15n RFIN2 L6 10n 12 Cellular 11 10 9 8 L8 12n 7 L7 10n L4 4.7n C3 0.01u C2 100p RFOUT2 RFIN1 L1 4.7n L2 15n 13 PCS 6 14 5 L3 1 2 3 4 6.8n C1 100p RFOUT1 V CTL 2 V CTL 1 2.8V / 0V 2.8V / 0V Parts list Parts ID L1, L2, L4 L3 L5~L8 C1~C3 Comments MURATA (LQP03T Series) TDK (MLK0603 Series) TAIYO-YUDEN (HK1005 Series) MURATA (GRM03 Series) - 18 - NJG1135MD7 ! TEST PCB LAYOUT (TOP VIEW) RFIN2 (Cellular) RFOUT2 (Cellular) L5 L6 L7 C2 L8 L1 L2 RFIN1 (PCS) L3 L4 C3 C1 VDD VCTL2 VCTL1 RFOUT1 (PCS) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm PRECAUTION: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 19 - NJG1135MD7 ! PACKAGE OUTLINE (EQFN14-D7) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 20 -