NJG1142KA1

NJG1142KA1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency (170~1680MHz). The NJG1142KA1 has a LNA pass-through function to select high gain mode or low gain mode by low control voltage operation. The NJG1142KA1 features low current consumption, high linearity. An ultra-small and ultra-thin package of FLP6-A1 is adopted. FEATURES Wide operating frequency range 170MHz~1680MHz Low voltage operation 2.8V typ. [High gain mode] Low current consumption 6mA typ. High gain +14.0dB typ. Low noise figure 1.5dB typ. High P-0.1dB Compression 0dBm typ. High input IP3 +2.0dBm typ. [Low gain mode] Low current consumption 11 μA typ. Gain (Low loss) -1.0dB typ. High P-0.1dB Compression +17dBm typ. High input IP3 +22.0dBm typ. External components count Small package size Lead -free and halogen-free PIN CONFIGURATION (Top View) PIN CONNECTION 1. VCTL 2. GND 3. RFOUT 4. GND 5. GND 6. RFIN TRUTH TABLE 6 RFIN PACKAGE OUTLINE NJG1142KA1 3 pcs. (capacitor: 2pcs, inductor: 1pc) FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.) 4 GND 3 RFOUT 5 GND Bias circuit 2 GND Logic circuit 1 VCTL “H” = VCTL(H) “L” = VCTL(L) VCTL H L LNA Mode High Gain Mode Low Gain Mode 1Pin INDEX NOTE: The information on this datasheet is subject to change without notice Ver.2010-05-21 -1- NJG1142KA1 ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER Supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL CONDITIONS RATINGS UNITS VDD VCTL PIN PD 5.0 5.0 VDD=2.8V 4-layer FR4 PCB with through-hole (74.2mmx74.2mm), Tj=150°C V V dBm mW +15 580 Topr Tstg -40~+85 -55~+150 °C °C ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage Control voltage (High) Control voltage (Low) VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL RF OFF, VCTL=1.8V RF OFF, VCTL=0V RF OFF, VCTL=1.8V 2.3 1.3 0.0 - 2.8 1.8 0.0 6.0 11.0 6.0 3.6 3.6 0.5 9.5 25.0 10.0 V V V mA μA μA Operating current1 Operating current2 Control current -2- NJG1142KA1 ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS1 (High Gain Mode) Conditions: VDD=2.8V, VCTL=1.8V, fRF =170~900MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit PARAMETERS Frequency Small signal gain1 Noise figure1 Input power 1dB gain compression1 Input 3rd order intercept point1 Isolation1 RF IN VSWR1 RF OUT VSWR1 SYMBOL CONDITIONS MIN TYP MAX UNITS fRF Gain1 NF1 P-1dB(IN)1 170 Exclude PCB, connector losses*1 Exclude PCB & connector losses*2 11.0 -5.0 f1=fRF, f2=fRF+100kHz, PIN=-26dBm Exclude PCB & connector losses*1 -3.0 - 620 14.0 1.5 0.0 +2.0 -19 1.5 1.5 1680 18.0 1.9 2.3 2.2 MHz dB dB dBm dBm dB - IIP3_1 ISL1 VSWRi1 VSWRo1 ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS2 (Low Gain Mode) Conditions: VDD=2.8V, VCTL=0V, fRF=170~900MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit PARAMETERS Frequency Small signal gain2 Input power at 1dB gain compression2 Input 3rd order intercept point2 RF IN VSWR2 RF OUT VSWR2 SYMBOL CONDITIONS MIN TYP MAX UNITS fRF Gain2 P-1dB(IN)2 170 Exclude PCB & connector losses*1 620 -1.0 +17.0 +22.0 1.5 1.5 1680 2.0 2.0 MHz dB dBm dBm - -2.5 +14.0 IIP3_2 VSWRi2 VSWRo2 f1=fRF, f2=fRF+100kHz, PIN=-8dBm +17.0 - *1 Input & output PCB and connector losses: 0.035dB(at 170MHz), 0.088dB(620MHz), 0.120dB(at 900MHz), 0.206dB(at 1680MHz) *2 Input PCB and connector losses: 0.018dB(170MHz), 0.044dB(620MHz), 0.060dB(900MHz), 0.103dB(at 1680MHz) -3- NJG1142KA1 TERMINAL INFORMATION No. 1 SYMBOL VCTL DESCRIPTION Control voltage supply terminal. 2 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RF output terminal. This terminal is also the power supply terminal of the LNA. please use inductor (L1) to connect power supply. Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance.。 Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RF input terminal. This IC is integrated an input DC blocking capacitor. 3 RFOUT 4 GND 5 GND 6 RFIN -4- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) Pout vs. Pin (freq=620MHz) 20 16 Gain, IDD vs. Pin (freq=620MHz) 50 10 14 Gain 40 Pout (dBm) Gain (dB) 0 12 30 -10 Pout -20 10 20 IDD 8 P-1dB(IN)=0dBm P-1dB(IN)=0dBm 0 10 6 -40 0 -30 -20 -10 0 10 10 -30 -40 -40 -30 -20 -10 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz) 20 4 3.5 NF, Gain vs. frequency (freq=50~2000MHz) 16 14 0 2.5 2 10 8 -40 IM3 NF 1.5 1 0.5 6 4 2 (Exclude PCB, Connector Losses) -60 -80 IIP3=+2.4dBm -100 -40 0 -30 -20 -10 0 10 20 0 500 1000 1500 0 2000 Pin (dBm) frequency (MHz) P-1dB(IN) vs. frequency (freq=50~2000MHz) 10 20 IIP3, OIP3 vs. frequency (f1=50~2000MHz, f2=f1+100kHz, Pin=-26dBm) OIP3 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 5 15 0 10 -5 5 IIP3 -10 0 500 1000 1500 2000 0 0 500 1000 1500 2000 frequency (MHz) frequency (MHz) Gain (dB) -20 Noise Figure (dB) Pout, IM3 (dBm) Pout 3 Gain 12 IDD (mA) -5- NJG1142KA1 ELECTRICAL CHARACTERISTICS(High Gain Mode) (Condition :Ta=+25℃ , VCTL=1.8V, Zs=Zl=50ohm, with application circuit) NF, Gain vs. VDD (freq=620MHz) 4 3.5 16 14 10 P-1dB(IN) vs. VDD (freq=620MHz) Noise Figure (dB) 2.5 2 1.5 1 0.5 (Exclude PCB, Connector Losses) 10 Gain (dB) P-1dB(IN) (dBm) 3 Gain 12 5 NF 8 6 4 2 0 0 -5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) IIP3, OIP3 vs. VDD (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 20 3 VSWR vs. VDD (freq=620MHz) OIP3 IIP3, OIP3 (dBm) 15 2.5 VSWR 10 2 VSWRo 5 1.5 IIP3 0 1.5 1 1.5 VSWRi 2.5 3.0 3.5 4.0 4.5 2.0 2.5 3.0 3.5 4.0 4.5 2.0 VDD (V) VDD (V) Isolation vs. VDD (freq=620MHz) 0 -5 10 IDD vs. VDD (RF OFF) 8 Isolation (dB) -15 -20 IDD (mA) -10 6 4 2 -25 0 1.5 -30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) -6- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition : VDD=2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) NF, Gain vs. Temperature (freq=620MHz) 4 3.5 16 14 10 P-1dB(IN) vs. Tempareture (freq=620MHz) Noise Figure (dB) 2.5 2 1.5 1 0.5 (Exclude PCB, Connector Losses) 10 8 Gain (dB) P-1dB(IN) (dBm) 3 Gain 12 5 0 NF 6 4 2 0 100 -5 0 -40 -20 0 20 40 60 80 -10 -40 -20 0 20 40 60 80 100 Temperature (oC) Tempareture (oC) IIP3, OIP3 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 20 3 VSWR vs. Temperature (freq=620MHz) OIP3 IIP3, OIP3 (dBm) 15 2.5 10 VSWR 2 VSWRo 1.5 5 IIP3 0 -40 1 -40 VSWRi -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 Temperature (oC) Temperature (oC) Isolation vs. Temperature (freq=620MHz) 0 -5 10 IDD, ICTL vs. Temperature (RF OFF) 25 8 IDD 20 Isolation (dB) -10 IDD (mA) 6 15 -15 -20 4 ICTL 10 2 5 -25 0 -40 0 100 -30 -40 -20 0 20 40 60 80 100 -20 0 20 40 60 80 Temperature (oC) Temperature (oC) ICTL (μA) -7- NJG1142KA1 ELECTRICAL CHARACTERISTICS(High Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout -8- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) K factor vs. frequency (freq=50MHz~20GHz) 20 -40 C -20 C o o o +25 C +60 C +85 C o o o 15 0C K factor 10 5 0 0.0 5.0 10 15 20 frequency (GHz) -9- NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit) Pout vs. Pin (freq=620MHz) 20 0 Gain, IDD vs. Pin (freq=620MHz) 50 10 -2 Gain 40 Pout (dBm) Gain (dB) 0 -10 -20 Pout -6 20 IDD -8 P-1dB(IN)=+22.2dBm P-1dB(IN)=22.2dBm 30 -10 -40 0 -30 -20 -10 0 10 20 30 10 -30 -40 -40 -30 -20 -10 0 10 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz) 40 20 -2 0 Gain vs. frequency (freq=50~2000MHz) Pout, IM3 (dBm) 0 -20 -40 -60 Pout Gain (dB) -4 IM3 -6 -8 -80 IIP3=+23.8dBm -100 -30 -10 -20 -10 0 10 20 30 0 500 1000 1500 2000 Pin (dBm) frequency (MHz) P-1dB(IN) vs. frequency (freq=50~2000MHz) 25 30 IIP3, OIP3 vs. frequency (f1=50~2000MHz, f2=f1+100kHz, Pin=-8dBm) IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 20 25 IIP3 OIP3 15 20 10 15 5 0 500 1000 1500 2000 10 0 500 1000 1500 2000 frequency (MHz) frequency (MHz) - 10 - IDD (μA) -4 30 NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃ , VCTL=0V, Zs=Zl=50ohm, with application circuit) Gain vs. VDD (freq=620MHz) 0 25 P-1dB(IN) vs. VDD (freq=620MHz) -1 -2 P-1dB(IN) (dBm) 2.0 2.5 3.0 3.5 4.0 4.5 20 Gain (dB) 15 -3 10 -4 -5 1.5 5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) IIP3, OIP3 vs. VDD (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) 30 2 VSWR vs. VDD (freq=620MHz) IIP3, OIP3 (dBm) 25 IIP3 OIP3 VSWR 1.8 1.6 20 1.4 VSWRi 15 1.2 VSWRo 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) IDD vs. VDD (RF OFF) 30 25 20 IDD (μA) 15 10 5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) - 11 - NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition : VDD=2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit) Gain vs. Temperature (freq=620MHz) 0 25 P-1dB(IN) vs. Tempareture (freq=620MHz) -1 -2 P-1dB(IN) (dBm) -20 0 20 40 60 80 100 20 Gain (dB) 15 -3 10 -4 -5 -40 5 -40 -20 0 20 40 60 80 100 Temperature (oC) Tempareture (oC) IIP3, OIP3 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) 30 2 VSWR vs. Temperature (freq=620MHz) IIP3 IIP3, OIP3 (dBm) 25 1.8 20 VSWR OIP3 1.6 1.4 VSWRi 15 1.2 VSWRo 10 -40 -20 0 20 40 60 80 100 1 -40 -20 0 20 40 60 80 100 Temperature (oC) Temperature (oC) IDD vs. Temperature (RF OFF) 30 8 7 6 20 IDD vs. VCTL (RF OFF) 25 15 IDD (mA) IDD (μA) 5 4 3 2 -40 C -20 C o o o 10 +25 C +60 C +85 C o o o 5 1 0 0.0 0C 0 -40 -20 0 20 40 60 80 100 0.5 1.0 1.5 2.0 2.5 3.0 Temperature (oC) VCTL (V) - 12 - NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=0V, Zs=Zl=50ohm,with application circuit) S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout - 13 - NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃ , VDD=2.8V, VCTL=0V, Zs=Zl=50ohm,With application circuit) S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) K factor vs. frequency (freq=50MHz~20GHz) 20 -40 C -20 C o o o +25 C +60 C +85 C o o o 15 0C K factor 10 5 0 0.0 5.0 10 15 20 frequency (GHz) - 14 - NJG1142KA1 APPLICATION CIRCUIT (Top View) C1 330pF RF OUT 4 GND 3 RFOUT L1 270nH VDD 5 GND Bias circuit 2 GND C2 1000pF VCTL RF IN 6 RFIN Logic circuit 1 VCTL 1Pin INDEX NOTES: ・ L1 is an RF choke. (DC feed inductor) ・ C1 is a coupling and DC blocking capacitor at the output. ・ C2 is a bypass capacitor. TEST PCB LAYOUT (Top View) VDD C2 L1 RF IN C1 RF OUT PARTS LIST Parts ID. L1 C1, C2 Notes TAIYO-YUDEN HK1005 Series MURATA GRM15 Series VCTL 1Pin INDEX PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z 0=50Ω) PCB SIZE=16.8mm x 16.8mm PRECAUTION: ・ In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 15 - NJG1142KA1 MEASUREMENT BLOCK DIAGRAM ● S parameter Measurements VDD RF IN DUT RF OUT Port 1 Port 2 Network Analyzer S parameter Measurement Block Diagram ● IIP3 Measurements VDD freq.1 Signal Generator 2dB Attenuator RF IN RF OUT DUT Spectrum Analyzer Signal Generator Power Comb. 2dB Attenuator 3dB 3dB Attenuator Attenuator freq.2 IF and IM3 Measurement Block Diagram for IIP3（High Gain Mode） VDD freq.1 Signal Generator 2dB Attenuator RF Amp. 2dB Attenuator RF IN DUT RF OUT Spectrum Analyzer 6dB Attenuator 10dB Attenuator IF and IM3 Measurement Block Diagram for IIP3（Low Gain Mode） - 16 - NJG1142KA1 ● Noise Figure Measurements Measuring instruments NF Analyzer Noise Source : Agilent 8973A : Agilent 346A Setting the NF analyzer Measurement mode form Device under test Mode setup form Sideband Averages Average mode Bandwidth Loss comp Tcold : LSB :8 : Point : 4MHz : off : setting the temperature of noise source (300.0K) NF Analyzer (Agilent 8973A) : Amplifier System downconverter : off Noise Source (Agilent 346A) I nput (50 Ω ) Noise Source Drive Output * Noise source and NF analyzer are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) In DUT out I nput (50 Ω ) Noise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. Measurement Setup - 17 - NJG1142KA1 PACKAGE OUTLINE (FLP6-A1) 1.6 0.05 0.2 0.1 0.55 0.05 1.6 0.05 0.13 0.05 0.1 0.1 0.22 0.05 0.2 0.1 0.5 0.5 1.2 0.05 Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obe y the relating l aw of your countr y. [ CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these dama ges. - 18 -