NJG1145UA2

NJG1145UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC I GENERAL DESCRIPTION The NJG1145UA2 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV and BS/CS applications. This amplifier covers VHF, UHF, and L bands. To achieve wide dynamic range, the NJG1145UA2 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1145UA2 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. In high gain mode, the NJG1145UA2 achieves high gain and high IIP3 across the band. The ESD protection circuits are integrated into the MMIC. They achieve high ESD protection voltage. An ultra-small and ultra-thin package of EPFFP6-A2 is adopted. I FEATURES G W ide operating frequency range G Low voltage operation G External components count G Small package size [High gain mode] G C urrent consumption G High gain G Low noise figure [Low gain mode] G Low current consumption G Gain(Low loss) I PIN CONFIGURATION (Top View) RFIN I PACKAGE OUTLINE N JG1145UA2 90MHz~2150MHz 2.8V typ. 3pcs. (capacitor: 2pcs, inductor: 1pc) EPFFP6-A2 (package size: 1.0mmx1.0mmx0.37mm typ.) 20mA typ. +15.0dB typ. 1.5dB typ. 11µA typ. -1.0dB typ. 5 GND VCTL 6 Logic circuit Bypass circuit 4 LNA circuit 1PIN INDEX Bias circuit Pin Connection 1. GND 2. GND 3. RFOUT 4. VCTL 5. GND 6. RFIN 3 RFOUT 1 GND GND 2 I TRUTH TABLE VCTL H L “ H”=VCTL(H)“L”=VCTL(L) LNA ON ON OFF Bypass OFF ON LNA mode High Gain mode Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2010-10-01 -1- NJG1145UA2 I ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs=Zl=50 ohm PARAMETER Supply voltage C ontrol voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL PIN PD Topr Tstg VDD=2.8V 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150°C C ONDITIONS RATINGS 5.0 5.0 +15 590 -40~+85 -55~+150 UNITS V V dBm mW °C °C I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=2.8V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS Operating voltage C ontrol voltage (High) C ontrol voltage (Low) Operating current1 Operating current2 C ontrol current SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL R F OFF, VCTL=1.8V R F OFF, VCTL=0V R F OFF, VCTL=1.8V C ONDITIONS MIN 2.3 1.3 0.0 TYP 2.8 1.8 0.0 20.0 11.0 6.0 MAX 3.6 3.6 0.5 27.0 25.0 10.0 U NITS V V V mA µA µA -2- NJG1145UA2 I ELECTRICAL CHARACTERISTICS2 (High Gain mode) Conditions: freq=90~2150MHz, VDD=2.8V, VCTL=1.8V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS Small signal gain1 N oise figure1 Input power 1dB gain compression1 Input 3rd order intercept point1 2nd order IMD1 SYMBOL Gain1 NF1 P-1dB(IN)1 IIP3_1 f1=freq, f2=freq+100kHz, PIN=-26dBm f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 S12 C ONDITIONS Exclude PCB, connector losses*1 Exclude PCB, connector losses*2 MIN 12.0 -5.0 +2.0 TYP 15.0 1.5 +0.0 +10.0 MAX 18.0 2.3 U NITS dB dB dBm dBm IM2_1 20.0 28.0 - dB 3rd order IMD1 Isolation R F IN VSWR1 R F OUT VSWR1 IM3_1 ISL VSWRi1 VSWRo1 35.0 - 45.0 -19.0 2.2 1.5 -15.0 3.2 2.2 dB dB - *1 Input & output PCB and connector losses: 0.037dB(90MHz), 0.092dB(620MHz), 0.274dB(2150MHz) *2 Input PCB and connector losses: 0.019dB(90MHz), 0.046dB(620MHz), 0.122dB(2150MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 200 500 700 600/650 700 frequency(MHz) frequency(MHz) -3- NJG1145UA2 I ELECTRICAL CHARACTERISTICS3 (Low Gain mode) Conditions: freq=90~2150MHz, VDD=2.8V, VCTL=0V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS Small signal gain2 Input power at 1dB gain compression2 Input 3rd order intercept point2 2nd order IMD2 SYMBOL Gain2 P-1dB(IN)2 IIP3_2 IMD2_2 f1=freq, f2=freq+100kHz, PIN=-6dBm f1=200MHz, f2=500MHz fmeas=700MHz, PIN1=P IN2=-8dBm *3 f1=600MHz, f2=650MHz fmeas=700MHz, PIN1=P IN2=-8dBm *3 C ONDITIONS Exclude PCB, connector losses*1 MIN -6.0 +10.0 +20.0 55.0 TYP -1.0 +15.0 +30.0 66.0 MAX U NITS dB dBm dBm dB 3rd order IMD2 R F IN VSWR2 R F OUT VSWR2 IMD3_2 VSWRi2 VSWRo2 65.0 - 75.0 1.5 1.5 4.0 4.0 dB - *1 Input & output PCB and connector losses: 0.037dB(90MHz), 0.092dB(620MHz), 0.274dB(2150MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 200 500 700 600/650 700 frequency(MHz) frequency(MHz) -4- NJG1145UA2 I TERMINAL INFORMATION No. 1 SYMBOL GND DESCRIPTION Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF output terminal. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply(VDD) via inductor(L1). Control voltage terminal. 2 GND 3 RFOUT 4 VCTL 5 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. This IC integrates an input DC blocking capacitor. -5- NJG1145UA2 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin 15 10 5 (f=620MHz) 20 Gain, IDD vs. Pin (f=620MHz) 40 35 Gain 15 30 Pout (dBm) 0 -5 -10 -15 -20 -25 -30 -40 Pout Gain (dB) 10 IDD 20 15 5 P-1dB(IN)=-4.0dBm -35 -30 -25 -20 -15 -10 -5 0 0 -40 -35 -30 -25 P-1dB(IN)=-4.0dBm 10 5 0 -20 -15 -10 -5 0 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin 40 20 (f1=620MHz, f2=f1+100kHz) 16 15 Gain, NF vs. frequency (f=50~2500MHz) 4.0 3.5 Gain Pout Gain (dB) 14 13 12 11 3.0 2.5 2.0 1.5 Pout, IM3 (dBm) 0 -20 -40 IM3 -60 -80 IIP3=+7.1dBm -100 -30 -25 -20 -15 -10 -5 0 5 10 NF 10 9 (Exclude PCB, Connector Losses) 1.0 0.5 0.0 2500 8 0 500 1000 1500 2000 Pin (dBm) frequency (MHz) P-1dB(IN) vs. frequency 5 (f=50~2150MHz) 30 OIP3, IIP3 vs. frequency (f1=50~2150MHz, f2=f1+100kHz, Pin=-26dBm) 25 OIP3 OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 0 20 -5 P-1dB(IN) 15 10 IIP3 -10 5 -15 0 500 1000 1500 2000 2500 0 0 500 1000 1500 2000 2500 frequency (MHz) frequency (MHz) -6- NF (dB) IDD (mA) 25 NJG1145UA2 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Gain, NF vs. VDD 16 15 14 (f=620MHz) 4.0 3.5 5 P-1dB(IN) vs. VDD (f=620MHz) Gain Gain (dB) NF (dB) 13 12 11 10 9 (Exclude PCB, Connector Losses) 2.5 P-1dB(IN) (dBm) 3.0 0 P-1dB(IN) -5 NF 2.0 1.5 1.0 0.5 0.0 4.5 -10 8 1.5 2.0 2.5 3.0 3.5 4.0 -15 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) OIP3, IIP3 vs. VDD 30 (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 40 IM2 vs. VDD (f1=200MHz, f2=500MHz, Pin=-15dBm) 25 35 OIP3 OIP3, IIP3 (dBm) 20 30 15 IM2 (dB) IM2 25 10 IIP3 20 5 15 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) IM3 vs. VDD 60 (f1=600MHz, f2=650MHz, Pin=-15dBm) VSWR vs. VDD 3.0 (f=620MHz) 55 2.5 50 VSWRi IM3 (dB) 45 VSWR 2.0 IM3 40 VSWRo 1.5 35 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) -7- NJG1145UA2 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit ISL vs. VDD 0 (f=620MHz) IDD vs. VDD 30 (RF OFF) -5 25 -10 20 ISL (dB) -15 IDD (mA) IDD 15 ISL -20 10 -25 5 -30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) -8- NJG1145UA2 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temperature 16 15 14 (f=620MHz) 4.0 3.5 3.0 2.5 2.0 5 10 P-1dB(IN) vs. Temperature (f=620MHz) Gain Gain (dB) 12 NF (dB) 13 P-1dB(IN) (dBm) 0 NF 11 10 9 (Exclude PCB, Connector Losses) 1.5 1.0 0.5 0.0 100 -5 8 -40 -20 0 20 40 o 60 80 -10 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature 25 (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 40 IM2 vs. Temperature (f1=200MHz, f2=500MHz, Pin=-15dBm) 20 OIP3 35 OIP3, IIP3 (dBm) 30 IM2 IM2 (dB) IIP3 -20 0 20 40 o 15 25 10 20 5 15 0 -40 60 80 100 10 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) IM3 vs. Temperature 60 (f1=600MHz, f2=650MHz, Pin=-15dBm) VSWR vs. Temperature 3.0 (f=620MHz) 55 2.5 50 VSWRi IM3 IM3 (dB) VSWR 45 2.0 40 1.5 35 VSWRo 30 -40 -20 0 20 40 o 60 80 100 1.0 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) -9- NJG1145UA2 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit ISL vs. Temperature 0 (f=620MHz) 20 IDD, ICTL vs. Temperature (RF OFF) 25 -5 18 20 IDD -10 ISL (dB) -15 ISL -20 14 10 ICTL -25 12 5 -30 -40 -20 0 20 40 o 60 80 100 10 -40 -20 0 20 40 o 60 80 0 100 Temperature ( C) Temperature ( C) K factor vs. frequency 20 (f=50MHz~20GHz) -40 C -20 C o o o +25 C +60 C +85 C o o o 15 0C K factor 10 5 0 0 5 10 15 20 frequency (GHz) - 10 - ICTL (µ A) IDD (mA) 16 15 NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Hgih Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, T a=25oC, Zs=Zl=50 ohm, with application circuit - 11 - NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit Pout vs. Pin 20 (f=620MHz) 0 Gain, IDD vs. Pin (f=620MHz) 10 Gain 10 -1 8 Pout (dBm) -10 -3 4 IDD -20 P-1dB(IN)=+16.0dBm -30 -20 -5 -20 -4 P-1dB(IN)=+16.0dBm 0 -15 -10 -5 0 5 10 15 20 2 -15 -10 -5 0 5 10 15 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin 40 20 (f1=620MHz, f2=f1+100kHz) Gain vs. frequency 0 (f=50~2500MHz) -2 Gain Pout, IM3 (dBm) 0 -20 -40 -60 -80 -100 -20 Pout Gain (dB) -4 -6 IM3 IIP3=+30.3dBm -8 (Exclude PCB, Connector Losses) -10 -10 0 10 20 30 40 0 500 1000 1500 2000 2500 Pin (dBm) frequency (MHz) P-1dB(IN) vs. frequency 25 (f=50~2150MHz) 34 OIP3, IIP3 vs. frequency (f1=90~2150MHz, f2=f1+100kHz, Pin=-6dBm) 32 P-1dB(IN) (dBm) OIP3, IIP3 (dBm) 20 IIP3 30 P-1dB(IN) 15 28 OIP3 26 10 24 5 0 500 1000 1500 2000 2500 22 0 500 1000 1500 2000 2500 frequency (MHz) frequency (MHz) - 12 - IDD (mA) 0 Gain (dB) Pout -2 6 NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit Gain vs. VDD 0 (f=620MHz) 20 P-1dB(IN) vs. VDD (f=620MHz) -1 Gain P-1dB(IN) (dBm) 15 P-1dB(IN) Gain (dB) -2 10 -3 5 -4 -5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) OIP3, IIP3 vs. VDD 35 (f1=620MHz, f2=f1+100kHz, Pin=-6dBm) 85 IM2 vs. VDD (f1=200MHz, f2=500MHz, Pin=-8dBm) IIP3 OIP3, IIP3 (dBm) 30 80 IM2 (dBm) OIP3 25 75 70 IM2 65 20 60 15 1.5 2.0 2.5 3.0 3.5 4.0 4.5 55 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) IM3 vs. VDD 95 (f1=600MHz, f2=650MHz, Pin=-8dBm) VSWR vs. VDD 2.0 (f=620MHz) 90 1.8 VSWRi IM3 (dBm) 85 80 IM3 VSWR 1.6 VSWRo 1.4 75 70 1.2 65 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) VDD (V) - 13 - NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD 30 (RF OFF) 25 20 IDD (µ A) 15 IDD 10 5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) - 14 - NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temperature 0 (f=620MHz) 25 P-1dB(IN) vs. Temperature (f=620MHz) -1 Gain P-1dB(IN) (dBm) 20 Gain (dB) P-1dB(IN) 15 -2 -3 10 -4 -5 -40 -20 0 20 40 o 60 80 100 5 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature 35 (f1=620MHz, f2=f1+100kHz, Pin=-6dBm) 80 IM2 vs. Temperature (f1=200MHz, f2=500MHz, Pin=-8dBm) IIP3 OIP3, IIP3 (dBm) 30 75 IM2 (dBm) OIP3 25 70 IM2 65 60 20 55 15 -40 -20 0 20 40 o 60 80 100 50 -40 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) IM3 vs. Temperature 95 (f1=600MHz, f2=650MHz,Pin=-8dBm) 2.0 VSWR vs. Temperature (f=620MHz) 90 1.8 VSWRo IM3 (dBm) 85 VSWR 1.6 VSWRi 80 IM3 1.4 75 1.2 70 1.0 -40 65 -40 -20 0 20 40 o 60 80 100 -20 0 20 40 o 60 80 100 Temperature ( C) Temperature ( C) - 15 - NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Temperature 25 (RF OFF) 20 -40 C o o K factor vs. frequency (f=50MHz~20GHz) +25 C +60 C +85 C o o o 20 15 -20 C 0C o K factor 20 40 o IDD (µ A) 15 10 10 IDD 5 5 0 -40 0 -20 0 60 80 100 0 5 10 15 20 Temperature ( C) frequency (GHz) IDD vs. VCTL 25 (RF OFF) 20 IDD (mA) 15 10 5 -40 C -20 C 0C o o o +25 C +60 C +85 C o o o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCTL (V) - 16 - NJG1145UA2 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit - 17 - NJG1145UA2 I APPLICATION CIRCUIT (Top View) RFIN 5 GND VCTL RF IN 6 Logic circuit Bypass circuit 4 VCTL LNA circuit 1PIN INDEX Bias circuit 330pF C1 1 GND GND 3 2 RFOUT RF OUT 2 70nH L1 VDD 1 000pF C2 I TEST PCB LAYOUT (Top View) I PARTS LIST VCTL Parts ID. L1 C1 RF IN L1 1pin Index Manufacturer TAIYO-YUDEN HK1005 Series MURATA GRM03 Series C1, C2 RF OUT C2 VDD PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z0=50 ohm) PCB SIZE=14.0mm x 14.0mm PRECAUTIONS G C 1 is a coupling and DC blocking capacitor at the output, and C2 is a bypass capacitor. G L1 is an RF choke. (DC feed inductor) G In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. G All external parts are placed as close as possible to the IC. - 18 - NJG1145UA2 I MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer Noise Source : Agilent 8973A : Agilent 346A Setting the NF analyzer Measurement mode form Device under test Mode setup form Sideband Averages Average mode Bandwidth Loss comp Tcold : LSB : 16 : Point : 4MHz : off : setting the temperature of noise source (300.0K) NF Analyzer (Agilent 8973A) : Amplifier System downconverter : off N oise Source (Agilent 346A) I nput (50 Ω ) N oise Source Drive Output * Noise source and NF analyzer are connected directly. C alibration Setup NF Analyzer (Agilent 8973A) N oise Source (Agilent 346A) In D UT out I nput (50 Ω ) N oise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. M easurement Setup - 19 - NJG1145UA2 I PACKAGE OUTLINE (EPFFP6-A2) U nit Substrate Terminal Treat Molding Material Weight :mm :FR-4 :Au :Epoxy Resin :0.855mg Caution s o n using this p roduct T his product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To wast e t his product, please obey the relati ng l aw of your c ountry. T his product may be damaged with electric static discharge (ESD) or spike voltage. P lease handle with care to avoid these damages. [ CAUTION] The specifications on this databook are only g iven for information , without any guarantee a s regards either mistakes or omissions. The application circuits in this databook are d escribed only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 20 -