NJG1146KG1

NJG1146KG1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC I GENERAL DESCRIPTION The NJG1146KG1 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV applications. To achieve wide dynamic range, the NJG1146KG1 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1146KG1 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. An small and ultra-thin package of ESON6-G1 is adopted. I FEATURES G Operating frequency G Operating voltage G Package size [High gain mode] G Operating current G Gain G Noise figure G IM2 G IM3 [Low gain mode] G Low current consumption G Gain(Low loss) I PIN CONFIGURATION (Top View) I PACKAGE OUTLINE N JG1146KG1 40MHz~900MHz 5.0V typ. ESON6-G1 (Package size: 1.6mm x 1.6mm x 0.397mm typ.) 60mA typ. 12.0dB typ. 2.2dB typ. 52.0dB typ. 80.0dB typ. 30µA typ. -1.0dB typ. 4 RFIN 3 RFOUT2 5 GND Bias circuit 2 NC (GND) 1 RFOUT1 6 VCTL Logic circuit Pin Connection 1. RFOUT1 2. NC(GND) 3. RFOUT2 4. RFIN 5. GND 6. VCTL *Exposed PAD: GND 1pin INDEX I TRUTH TABLE VCTL H L “H”=VCTL(H)“L”=VCTL(L) LNA ON ON OFF Bypass OFF ON LNA mode High Gain mode Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2011-03-17 -1- NJG1146KG1 I ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs=Zl=50 ohm PARAMETER D rain voltage C ontrol voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL PIN PD Topr Tstg VDD=5.0V 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150°C C ONDITIONS RATINGS 6.0 6.0 +10 1200 -40~+85 -55~+150 UNITS V V dBm mW °C °C I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) VDD=5.0V, T a=+25°C, with application circuit PARAMETERS SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL RF OFF, VCTL=1.8V RF OFF, VCTL=0V R F OFF, VCTL=1.8V C ONDITIONS MIN 2.4 1.3 0.0 TYP 5.0 1.8 0.0 60 30 6 MAX 5.5 5.5 0.5 80 50 12 U NITS V V V mA Operating voltage C ontrol voltage (High) C ontrol voltage (Low) Operating current1 Operating current2 C ontrol current µA µA -2- NJG1146KG1 I ELECTRICAL CHARACTERISTICS2 (High Gain mode) VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS Small signal gain1 N oise figure1_1 SYMBOL Gain1 NF1_1 C ONDITIONS Exclude PCB & connector losses *1 freq=40~80MHz, Exclude PCB & connector losses *2 freq=80~900MHz, Exclude PCB & connector losses *2 MIN 9.0 TYP 12.0 2.5 MAX 14.0 4.0 U NITS dB dB N oise figure1_2 Input power at 1dB gain compression point1 Input 3rd order intercept point1 2nd order intermodulation distortion1 3rd order intermodulation distortion1 Isolation R F IN Return loss1 R F OUT Return loss1 NF1_2 - 2.2 3.0 dB P-1dB(IN)1 IIP3_1 IM2_1 f1=freq, f2=freq+100kHz, PIN=-12dBm f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 S12 +0.0 +16.0 42.0 +6.0 +22.0 52.0 - dBm dBm dB IM3_1 ISL1 RLi1 RLo1 55.0 7.0 7.0 80.0 -17.0 10.0 10.0 -13.0 - dB dB dB dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *2 Input PCB and connector losses: 0.007dB(40MHz), 0.011dB(80MHz), 0.044dB(620MHz), 0.060dB(900MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 200 500 700 600/650 700 frequency(MHz) frequency(MHz) -3- NJG1146KG1 I ELECTRICAL CHARACTERISTICS3 (High Gain mode) VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit PARAMETERS Small signal gain75 C omposite Second Order C omposite Triple Beat SYMBOL Gain75 CSO C ONDITIONS Exclude PCB & connector losses *1 74channels *4, CW PIN=+15dBmV fmeas=295.25MHz, 74channels *4, CW PIN=+15dBmV fmeas=295.25±1.25MHz, 74channels *4, Modulation PIN=+15dBmV fmeas=295.25±15.75kHz, MIN TYP 12.0 -56 MAX U NITS dB dBc C TB - -81 - dBc C ross Modulation R F IN Return loss75 R F OUT Return loss75 XMOD RLi75 R Lo75 - -80 15 15 - dBc dB dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *4 74channels: ch1~C63(91.25~463.25MHz 6MHz step) and U13~U25(471.25~543.25MHz 6MHz step) except ch7(189.25MHz) , C28(253.25MHz) -4- NJG1146KG1 I ELECTRICAL CHARACTERISTICS4 (Low Gain mode) VDD=5.0V, VCTL=0V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS Small signal gain2 Input power at 1dB gain compression point2 Input 3rd order intercept point2 2nd order intermodulation distortion1 3rd order intermodulation distortion1 R F IN Return loss2 R F OUT Return loss2 SYMBOL Gain2 P-1dB(IN)2 IIP3_2 IM2_2 f1=freq, f2=freq+100kHz, PIN=-2dBm f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 C ONDITIONS Exclude PCB & connector losses *1 MIN -2.5 +10.0 +25.0 40.0 TYP -1.0 +16.0 +33.0 60.0 MAX U NITS dB dBm dBm dB IM3_2 RLi2 RLo2 48.0 8.0 8.0 70.0 15.0 15.0 - dB dB dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 200 500 700 600/650 700 frequency(MHz) frequency(MHz) -5- NJG1146KG1 I TERMINAL INFORMATION No. SYMBOL DESCRIPTION At the High gain mode, RF output terminal. T his terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply(VDD) via inductor(L1). N o connected terminal. This terminal is not connected with internal circuit. At the Low gain mode, RF output terminal. Please connect this terminal with RFOUT1 terminal through DC blocking capacitor(C2) shown in the application circuit. RF input terminal. External capacitor C1 is required to block the DC bias voltage of internal circuit. 1 R FOUT1 2 N C(GND) 3 R FOUT2 4 R FIN 5 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Control voltage terminal. 6 VCTL Exposed Pad GND Ground terminal. Please connect Exposed Pad with GND by using the plated through holes. -6- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 20 15 10 5 Pout (dBm) Gain, IDD vs. Pin (f=620MHz) 14 Gain 12 10 Gain (dB) 8 IDD 6 50 40 P-1dB(IN)=+7.7dBm 2 10 90 80 70 60 IDD (mA) Gain (dB) 0 -5 -10 -15 Pout -20 -25 P-1dB(IN)=+7.7dBm -30 -40 -30 -20 -10 0 4 -40 -30 -20 -10 0 30 10 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 40 OIP3=+36.1dBm 20 Pout, IM3 (dBm) 0 -20 -40 IM3 -60 IIP3=+24.3dBm -80 -40 -30 -20 -10 0 10 20 30 0.5 NF (dB) 4 3.5 3 NF, Gain vs. Frequency 16 14 12 10 8 NF 1.5 1 Gain 6 4 2 (Exclude PCB, Connector Losses) 0 0 500 1000 1500 Frequency (MHz) 0 2000 Pout 2.5 2 Pin (dBm) P-1dB(IN) vs. Frequency 12 11 35 40 IIP3, OIP3 vs. Frequency (f1=Frequency, f2=f1+100kHz, Pin=-12dBm) OIP3 10 P-1dB(IN) (dBm) 9 8 P-1dB(IN) 7 6 5 4 0 500 1000 Frequency (MHz) 1500 2000 15 0 500 1000 Frequency (MHz) 1500 2000 IIP3, OIP3 (dBm) 30 25 IIP3 20 -7- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=10MHz~3GHz) S21, S12 (f=10MHz~3GHz) VSWR (f=10MHz~3GHz) Zin, Zout (f=10MHz~3GHz) -8- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) K-factor vs. Frequency 50 5 K-factor vs. Frequency 40 4 K-factor K-factor 30 3 20 2 10 1 0 0 5000 10000 15000 20000 0 0 5000 10000 15000 20000 Frequency (MHz) Frequency (MHz) -9- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit IDD vs. VDD 80 70 60 Gain (dB) Gain vs. VDD 16 14 Gain 12 10 8 6 4 2 0 (f=620MHz) (RF OFF) 50 IDD (mA) IDD 40 30 20 10 0 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 NF vs. VDD 4 3.5 3 2.5 NF (dB) 2 1.5 1 0.5 0 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 NF(at 620MHz) RLi, RLo vs. V 20 (f=620MHz) DD 15 RLi, RLo (dB) NF(at 40MHz) RLo 10 RLi 5 0 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 P-1dB(IN) vs. VDD 10 (f=620MHz) IIP3, OIP3 vs. VDD 40 35 OIP3 (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 5 P-1dB(IN) (dBm) 30 IIP3, OIP3 (dBm) 25 20 15 IIP3 10 5 0 P-1dB(IN) -5 -10 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 0 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 - 10 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit IM2 vs. VDD (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 80 70 IM3 vs. V DD (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 100 80 60 IM2 50 IM2 (dB) 40 30 20 IM3 IM3 (dB) 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 60 40 20 10 0 0 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 K-factor vs. Frequency 50 5 K-factor vs. Frequency 40 4 K-factor K-factor 30 VDD=6.0V 20 VDD=5.0V 10 VDD=2.4V 0 0 5000 10000 15000 20000 3 VDD=6.0V 2 VDD=5.0V 1 VDD=2.4V 0 0 5000 10000 15000 20000 Frequency (MHz) Frequency (MHz) - 11 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IDD vs. Ta 80 70 60 IDD IDD (mA) Gain (dB) 50 40 30 20 10 0 -40 (RF OFF) 16 14 Gain 12 10 8 6 4 2 0 -40 Gain vs. Ta (f=620MHz) -20 0 20 o 40 60 80 100 -20 0 20 40 60 80 100 Ta ( C) Ta (oC) NF vs. Ta 6 5 4 NF (dB) 3 NF(at 40MHz) 2 NF(at 620MHz) 1 0 -40 1 0 0 200 NF (dB) 6 5 Ta=+85oC 4 NF vs. Frequency Ta=+25oC 3 2 Ta=-40oC -20 0 20 40 60 80 100 400 600 800 1000 Ta (oC) Frequency (MHz) P-1dB(IN) vs. Ta (f=620MHz) 10 IIP3, OIP3 vs. Ta (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 40 35 8 P-1dB(IN) (dBm) P-1dB(IN) 6 OIP3 30 IIP3, OIP3 (dBm) 25 20 15 10 IIP3 4 2 5 0 -40 -20 0 20 o 40 60 80 100 0 -40 -20 0 20 o 40 60 80 100 Ta ( C) Ta ( C) - 12 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IM2 vs. Ta (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 80 70 80 60 IM2 50 IM2 (dB) 40 30 20 20 10 0 -40 0 -40 IM3 (dB) 60 IM3 vs. Ta (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 100 IM3 40 -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 Ta (oC) Ta (oC) RLi, RLo vs. Ta 20 (f=620MHz) 80 70 15 RLi, RLo (dB) RLi IDD (mA) 10 RLo 5 60 50 40 30 20 10 0 -40 0 -20 0 20 o IDD vs. VCTL +85 C +75 C +50 C +25 C o o o o 0C -25 C -40 C o o o 40 60 80 100 0 0.5 1 VCTL (V) 1.5 2 Ta ( C) K-factor vs. Frequency 50 5 K-factor vs. Frequency 40 4 K-factor Ta=+85oC K-factor 30 3 Ta=+85oC 20 2 Ta=+25oC 10 Ta=+25oC 15000 20000 1 Ta=-40oC 0 0 5000 10000 15000 20000 Ta=-40oC 0 0 5000 10000 Frequency (MHz) Frequency (MHz) - 13 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 20 15 10 5 0 Pout (dBm) -5 -10 -15 -20 -25 -30 -35 -40 -45 -40 -30 -20 -10 Pin (dBm) P-1dB(IN)=+18.0dBm Pout Gain, IDD vs. Pin (f=620MHz) 0 Gain -1 8 10 Gain (dB) -3 P-1dB(IN)=+18.0Bm -4 IDD -5 4 2 0 -40 -30 -20 -10 Pin (dBm) 0 10 20 0 10 20 Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 40 OIP3=+36.2dBm 20 -2 0 Gain vs. Frequency 0 Pout, IM3 (dBm) -20 -40 -60 IM3 -80 IIP3=+37.1dBm -100 -30 -20 -10 0 10 20 30 40 -10 0 -8 Gain (dB) Gain Pout -4 -6 (Exclude PCB, Connector Losses) 500 1000 Frequency (MHz) 1500 2000 Pin (dBm) P-1dB(IN) vs. Frequency 20 40 IIP3, OIP3 vs. Frequency (f1=Frequency , f2=f1+100kHz, Pin=-2dBm) IIP3 19 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 35 OIP3 18 P-1dB(IN) 17 30 16 15 0 500 1000 Frequency (MHz) 1500 2000 25 0 500 1000 Frequency (MHz) 1500 2000 - 14 - IDD (mA) -2 6 NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=10MHz~3GHz) S21, S12 (f=10MHz~3GHz) VSWR (f=10MHz~3GHz) Zin, Zout (f=10MHz~3GHz) - 15 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=50MHz~20GHz) K-factor vs. Frequency 50 5 S21, S12 (f=50MHz~20GHz) K-factor vs. Frequency 40 4 K-factor K-factor 30 3 20 2 10 1 0 0 5000 10000 15000 20000 0 0 5000 10000 15000 20000 Frequency (MHz) Frequency (MHz) - 16 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Ta 50 (RF OFF) Gain vs. Ta 0 -0.5 (f=620MHz) 40 IDD -1 Gain Gain (dB) -1.5 -2 -2.5 -3 IDD (µ A) 30 20 10 -3.5 0 -40 -20 0 20 o 40 60 80 100 -4 -40 -20 0 20 40 60 80 100 Ta ( C) Ta (oC) RLi, RLo vs. Ta 20 (f=620MHz) 24 P-1dB(IN) vs. Ta (f=620MHz) 15 RLi, RLo (dB) RLi RLo P-1dB(IN) (dBm) 22 20 P-1dB(IN) 18 10 5 16 0 -40 -20 0 20 40 60 80 100 14 -40 -20 0 20 40 60 80 100 Ta (oC) Ta (oC) IIP3, OIP3 vs. Ta (f1=620MHz, f2=620.1MHz, Pin=-2dBm) 40 IIP3 38 IIP3, OIP3 (dBm) 36 OIP3 34 32 30 -40 -20 0 20 o 40 60 80 100 Ta ( C) - 17 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IM2 vs. Ta (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=0dBm) 80 70 80 60 IM2 50 IM2 (dB) 40 30 20 20 10 0 -40 0 -40 IM3 (dB) 60 IM3 IM3 vs. Ta (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=0dBm) 100 40 -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 Ta (oC) Ta (oC) K-factor vs. Frequency 50 5 K-factor vs. Frequency 40 4 Ta=+85oC K-factor Ta=+85oC 20 Ta=+25oC K-factor 30 3 Ta=+25oC 2 Ta=-40oC 10 Ta=-40oC 0 0 5000 10000 15000 20000 0 0 5000 10000 15000 20000 1 Frequency (MHz) Frequency (MHz) - 18 - NJG1146KG1 I APPLICATION CIRCUIT (Top View) R1 680 ohm RF IN 4 3 RFOUT2 C2 0.01µF C1 0.01µF RFIN 5 GND Bias circuit 2 NC (GND) VCTL 6 VCTL Logic circuit RF OUT 1 RFOUT1 L1 470nH C3 0.01µF 1Pin INDEX C4 0.01µ F VDD I TEST PCB LAYOUT PARTS LIST Parts ID. L1 R1 RF IN C1 C2 C3 RF OUT Manufacturer TAIYO-YUDEN HK1608 Series MURATA GRM15 Series KOA RK73B Series C1~C4 R1 L1 C4 VCTL VDD PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z0=50 ohm) PCB SIZE=16.8mm x 16.8mm 1PIN INDEX PRECAUTIONS G C 1~C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor, and C4 is a bypass capacitor. G L1 is an RF choke. (DC feed inductor) G Please connect Exposed Pad with GND by using the plated through hole. G In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. G All external parts are placed as close as possible to the IC. - 19 - NJG1146KG1 I MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer Noise Source : Agilent 8973A : Agilent 346A Setting the NF analyzer Measurement mode form Device under test Mode setup form Sideband Averages Average mode Bandwidth Loss comp Tcold : LSB : 16 : Point : 4MHz : off : setting the temperature of noise source (303.15K) NF Analyzer (Agilent 8973A) : Amplifier System downconverter : off N oise Source (Agilent 346A) I nput (50 Ω ) N oise Source Drive Output * Noise source and NF analyzer are connected directly. C alibration Setup NF Analyzer (Agilent 8973A) N oise Source (Agilent 346A) In D UT out I nput (50 Ω ) N oise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. M easurement Setup - 20 - NJG1146KG1 I PACKAGE OUTLINE (ESON14-D7) 0.10 M S 1 . 6 0 ± 0 .0 5 A 1. 6 0 ±0 . 0 5 0 . 39 7 ±0 . 0 3 0 0.075 S S 0.05 +0.010 -0.008 S 0.10 M S B 0. 0 1 0 Please connect to GND A +0.06 -0.04 1.20 C0 .2 B 0 . 2 1 -0.04 +0.06 0 . 6 8 -0.04 +0.06 3 0 -R .2 U nit Substrate Terminal Treat Molding Material Weight :mm :Cu :SnBi :Epoxy Resin :0.0035 (g) 0. 5 0.5 0 . 2 6 +0.06 -0.04 φ0.05 M S AB Caution s o n using this p roduct T his product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To wast e t his product, please obey the relati ng l aw of your c ountry. T his product may be damaged with electric static discharge (ESD) or spike voltage. P lease handle with care to avoid these damages. [ CAUTION] The specifications on this databook are only g iven for information , without any guarantee a s regards either mistakes or omissions. The application circuits in this databook are d escribed only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 21 -