NJG1308F-C3

NJG1308F DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. nPACKAGE OUTLINE NJG1308F nFEATURES lLow supply voltage operation lLow current consumption lHigh gain lPout at 1dB Gain Compression point lpackage nPIN CONFIGURATION F TYPE (Top View) +3.0V typ. 15mA typ. @Pout=+8dBm 18dB typ. @f=938MHz 16dB @f=1441MHz 14dB @f=1900MHz +12dBm typ. @f=938MHz +11dBm typ. @f=1441/1900MHz MTP6 1 6 2 5 3 4 Pin connection 1.RFin 2.GND 3.BPC 4.RFout & VDD 5.GND 6.GND Note: is a package orientation mark. -1- NJG1308F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD Pin PD Topr Tstg CONDITIONS VDD=3V (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V 15 dBm 300 mW -40~+85 °C -55~+150 °C nELECTRICAL CHARACTERISTICS 1(Application circuit 1) PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL Freq VDD IDD Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=50kHz Pin;π/4 DQPSK VDD=3.0V VDD=3.0V MIN 915 2.7 15 (Ta=+25°C, Zs=Zl=50Ω) TYP MAX UNITS 938 960 MHz 3.0 5.0 V 15 21 mA 18 21 dB 0.5 dB +12 -60 1.5 1.5 dBm dBc nELECTRICAL CHARACTERISTICS 2 (Application circuit 2) PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL freq VDD IDD Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=50kHz Pin; π/4 DQPSK VDD=3.0V VDD=3.0V MIN 1429 2.7 13 (Ta=+25°C, Zs=Zl=50Ω) TYP MAX UNITS 1441 1453 MHz 3.0 5.0 V 15 21 mA 16 19 dB 0.5 dB +11 -60 1.5 1.5 dBm dBc -2- NJG1308F nELECTRICAL CHARACTERISTICS 3 (Application circuit 3) PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PHS Regulation) Input VSWR Output VSWR SYMBOL freq VDD IDD Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=600kHz Pin; π/4 DQPSK VDD=3.0V VDD=3.0V (Ta=+25°C, Zs=Zl=50Ω) MIN TYP MAX UNITS 1890 1900 1920 MHz 2.7 3.0 5.0 V 15 21 mA 11 14 17 dB 0.5 dB +11 -60 1.5 1.5 dBm dBc nELECTRICAL CHARACTERISTICS 4 (Application Circuit 4) PARAMETER Operating Frequency Supply Voltage Operating Current Power Gain Gain Flatness Pout at 1dB Compression point Input VSWR Output VSWR SYMBOL freq VDD IDD Gain Gflat P-1Db VSWRI VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V VDD=3.0V (Ta=+25°C, Zs=Zl=50Ω) MIN TYP MAX UNITS 1750 1765 1780 MHz 2.7 3.0 5.0 V 15 mA 14 dB 0.5 dB +11 1.5 1.5 dBm -3- NJG1308F nTYPICAL CHARACTERISTICS 1 (Application Circuit 1) -4- NJG1308F nTYPICAL CHARACTERISTICS 2 (Application Circuit 2) -5- NJG1308F nTYPICAL CHARACTERISTICS 3 (Application Circuit 3) -6- NJG1308F nTYPICAL CHARACTERISTICS 4 (Application Circuit 4) S21,S11,S22,S12 vs. FREQUENCY (V =3V) 20 S21 10 S12 S21,S11,S22 (dB) S12 (dB) 0 S22 -10 S11 -40 -30 -20 DD -10 -20 -50 -30 0.5 -60 1 1.5 2 2.5 Frequency (GHz) 3 -7- NJG1308F nTYPICAL CHARACTERISTICS Scattering Parameters (VDD=3V) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 mag (U) 0.865 0.853 0.834 0.810 0.788 0.757 0.729 0.700 0.672 0.645 0.618 0.589 0.563 0.541 0.519 0.502 0.489 0.490 0.502 0.536 0.592 0.669 0.760 0.851 0.920 0.951 S 11 ang (deg) -26.1 -32.2 -38.2 -43.7 -48.5 -52.8 -56.7 -60.3 -63.1 -65.6 -67.7 -69.0 -69.7 -69.8 -69.6 -67.9 -65.9 -62.3 -58.9 -55.6 -53.5 -53.8 -56.9 -62.8 -70.6 -79.2 mag (U) 4.892 5.060 5.093 5.046 4.974 4.801 4.650 4.457 4.271 4.083 3.893 3.687 3.509 3.317 3.122 2.904 2.696 2.432 2.150 1.814 1.409 0.933 0.461 0.575 1.154 1.703 S 21 ang (deg) 174.0 163.2 152.9 143.5 134.5 126.4 118.6 111.5 104.6 98.0 91.3 85.2 79.3 72.9 66.5 60.0 53.6 46.6 39.1 31.9 24.6 21.3 41.1 106.1 113.3 105.2 mag (U) 0.029 0.030 0.033 0.035 0.036 0.038 0.039 0.041 0.043 0.045 0.046 0.049 0.051 0.055 0.058 0.060 0.063 0.065 0.065 0.066 0.062 0.056 0.050 0.048 0.060 0.081 S 12 ang (deg) 52.0 48.7 46.2 46.4 44.5 43.5 42.7 44.0 43.3 44.6 44.0 43.8 42.4 40.3 38.3 35.8 31.4 25.7 17.4 8.5 -5.9 -24.0 -54.3 -96.7 -140.4 -172.8 mag (U) 0.718 0.681 0.648 0.626 0.603 0.590 0.580 0.579 0.577 0.581 0.588 0.597 0.612 0.630 0.650 0.671 0.700 0.728 0.764 0.795 0.828 0.846 0.842 0.800 0.731 0.624 S 22 ang (deg) -56.5 -63.4 -69.6 -74.9 -78.8 -82.4 -85.6 -88.8 -90.9 -93.6 -96.0 -98.5 -100.8 -103.7 -106.9 -110.2 -114.5 -119.5 -125.8 -132.8 -142.1 -153.2 -166.5 178.6 161.6 144.2 nPIN CONNECTIONS AND FUNCTIONAL BLOCK DIAGRAM VDD RF OUT 4 RF IN 1 ZO=50Ω AMP ZO=50Ω 3 ZL=50Ω ZS=50Ω 6 5 2 -8- NJG1308F nAPPLICATION CIRCUIT1 nAPPLICATION CIRCUIT 2 -9- NJG1308F nAPPLICATION CIRCUIT 3 nAPPLICATION CIRCUIT 4 - 10 - NJG1308F nRECOMMENDED PCB DESIGN VDD GND RFin C1 L1 C2 R1 C3 C4 L2 L3 C6 RFout NJG 1308F GND C5 PCB:FR-4 22.5x20.0mm, t=0.5mm MICROSTRIP LINE WIDTH=1.0mm (Zo=50Ω) CHIP SIZE:1608 Notes: [1] Following chip capacitor should be connected near to each terminal as bypass capacitor. (1) C3 (2) C4 [2] Following chip capacitors are necessary to block DC bias. (3) C1 (4) C6 [3] Chip parts list. Parts ID C1~C6 L1~L3 Comment MURATA GRM39 Series TAIYO-YUDEN HK1608 Series - 11 - NJG1308F nPACKAGE OUTLINE (MTP6) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 14mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • D o NOT eat or put into mouth. • D o NOT dispose in fire or break up this product. • D o NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages . [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 12 -