NJG1312PC1-C6

NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIRE GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted. nPACKAGE OUTLINE NJG1312PC1 n FEATURES lLow supply voltage operation lLow current consumption lHigh gain lPout at 1dB Gain Compression point lUltra small & thin package n PIN CONFIGURATION +2.9V typ. 17mA typ. @ Pout=+5.6dBm 19dB typ. @ 900MHz +10dBm typ. @ 900MHz FFP16-C1 (Mount Size: 2.5x2.5x0.85mm) FFP16 Type (Top View) 12 11 10 9 13 14 15 16 2 8 7 6 5 Pin Connection 1.PC 9.RFout 2.GND 10.GND 3.GND 11.P2 4.RFin 12. VCTR2 5.NC 13. VCTR1 6.GND 14.P1 7.GND 15.GND 8.BPC 16.GND 1 3 4 -1- NJG1312PC1 n ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL CONDITIONS VDD VCTL Pin VDD=2.9V PD Topr Tstg (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V 6 V 15 dBm 400 mW -40~+85 °C -55~+125 °C n ELECTRICAL CHARACTERISTICS (VDD=2.9V, VCTR=2.7V, f=900MHz, Ta=-20~+80°C, Zs=Zl=50Ω, Rs (External)=180Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 887 900 925 MHz Drain Voltage VDD 2.7 2.9 5.0 V RF SW ON Operating Current IDD 17 22 mA − Pout=+5.6dBm Control Current Control Voltage(LOW) Control Voltage(HIGH) Small Signal Gain Gain Flatness Gain Control Range Pout at 1dB Gain Compression point IN-Band Spurious1 IN-Band Spurious2 Input VSWR Output VSWR ICTL VCTL(L) VCTL(H) Gain Gflat Gcont P-1dB IBS1 IBS2 VSWRi VSWRo RF SW ON Pin=-15dBm RF SW ON Pin=-15dBm f=887~925MHz Pin=-15dBm RF SW ON RF SW ON, Pout=+5.6dBm OFFSET 900kHz RF SW ON, Pout=+5.6dBm OFFSET 1.98MHz − -0.2 2.5 17 − -28.5 − − − − − 1.0 0 2.7 19 0.5 -27 +10 -55 -73 2.4 1.4 2.0 0.2 5.5 22 − -25.5 − -51 -68 3.0 2.0 uA V V dB dB dB dBm dBc dBc RF SW ON RF SW ON Note) RF SW ON/OFF in the table above: Control voltages (V CTL1, V CTL2) are as follows RF SW ON RF SW OFF P1: V CTL1=0V, V CTL2=2.7V P2: V CTL1=2.7V, V CTL2=0V P1: V CTL1=2.7V, V CTL2=0V P2: VCTL1=0V, VCTL2=2.7V -2- NJG1312PC1 n TERMINAL INFORMATION No. 1 2 3 4 5 6 7 8 SYMBOL PC GND GND RFin NC GND GND BPC DESCRIPTIONS RF output terminal of SW. Ground terminal. Ground terminal. RF signal input terminal of driver amplifier. Neutral terminal. Should be connected to the ground. Ground terminal. Ground terminal. Source electrode terminal of driver amplifier. The operating current is chosen by a resistor connected between this terminal and ground. RF signal output terminal of driver amplifier. Please use choke coil for power supply of driver amplifier at this terminal. Ground terminal. RF input terminal 2 of SW. Control terminal 2 of RF signal. Please see the truth table. Control terminal 1 of RF signal. Please see the truth table. RF input terminal 1 of SW. Ground terminal. Ground terminal. 9 10 11 12 13 14 15 16 RFout GND P2 VCTL2 VCTL1 P1 GND GND Notice: PC terminal at pin 1 should be connected to the GND through high resistance for pull-down (Max 560KΩ). n TRUTH TABLE VCTL1 0V 2.7V VCTL2 2.7V 0V P1-PC ON OFF P2-PC OFF ON -3- NJG1312PC1 nTYPICAL CHARACTERISTICS FREQUENCY CHARACTERISTIC FREQUENCY CHARACTERISTICS (V =2.9V, V DD CTR FREQUENCY CHARACTERISTIC FREQUENCY CHARACTERISTICS (V =2.9V, V DD CTR =2.7V, RF SW ON) 0 10 =2.7V, RF SW OFF) -10 20 S21 10 S11,S21,S22 (dB) -10 S11,S21,S22 (dB) 0 S11 -10 S21 -20 S22 -20 -30 S12 (dB) In Band Spurios (dBc) Pout =5.6dBm S12 (dB) 0 S11 -10 S22 -20 S12 -20 -40 -30 -30 S12 -40 -50 -40 -60 -30 0.5 -50 1 1.5 2 Frequency (GHz) 2.5 3 -50 0.5 -70 1 1.5 2 Frequency (GHz) 2.5 3 IDD, ICTR vs. TEMPERATURE Pin vs. Pout, IDD (V DD=2.9V, VCTR=2.7V, f=900MHz) 20 15 Pout 10 Pout (dBm) 5 0 -5 -10 IDD -15 -20 -15 -10 -5 Pin (dBm) 0 5 10 10 P-1dB 9.73dBm 35 45 25 5 (VDD=2.9V, VCTR=2.7V, f=900MHz, Pout=5.6dBm) 30 6 40 20 4 IDD(mA) 20 5 1 I 25 DD (mA) 30 15 IDD 3 10 2 15 0 -50 -25 0 25 50 75 ICTR 0 100 Gain, G 30 25 cont ,G flat vs. TEMPERATURE 0.6 Gcont 0.5 P-1dB, Psat, OIP3 (dBm) P-1dB, Psat, IN BAND SPURIOUS vs. TEMPERATURE (V =2.9V, V DD CTR (V DD=2.9V, VCTR=2.7V, f=900MHz) 25 =2.7V, f=900MHz) 75 1.98MHz offset OIP3 20 70 Gain, Gcont (dB) 20 Gain 15 10 G flat 0.4 (dB) 15 Psat 10 P-1dB 65 G flat 0.3 0.2 60 5 0 -50 0.1 0 100 5 0.9MHz offset 55 -25 0 25 50 o 75 0 -50 Ambient Temperature ( C) -25 0 25 50 75 Ambient Temperature ( oC) 50 100 -4- ICTR(uA) NJG1312PC1 nTYPICAL CHARACTERISTICS Driver Amp. Scattering Parameters Table Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 mag (U) 0.902 0.907 0.901 0.896 0.880 0.864 0.839 0.824 0.797 0.779 0.754 0.737 0.715 0.696 0.676 0.663 0.644 0.628 0.617 0.603 0.594 0.582 0.577 0.574 0.577 0.580 S 11 ang (deg) -20.1 -25.8 -31.2 -36.8 -41.9 -46.9 -52.0 -56.6 -61.1 -65.6 -69.6 -73.8 -77.4 -81.3 -84.5 -88.0 -90.8 -93.9 -96.3 -98.9 -101.0 -102.9 -104.6 -106.1 -107.3 -108.4 mag (U) 4.427 4.762 4.897 5.018 4.992 5.006 4.891 4.837 4.675 4.580 4.428 4.301 4.122 3.973 3.800 3.653 3.478 3.334 3.163 3.016 2.850 2.702 2.546 2.389 2.234 2.069 (VDD=2.9V, Rs=180Ω, Zo=50Ω) S 12 mag (U) 0.036 0.040 0.044 0.048 0.051 0.053 0.055 0.058 0.061 0.061 0.063 0.064 0.064 0.067 0.066 0.067 0.068 0.068 0.069 0.069 0.069 0.070 0.070 0.069 0.069 0.066 ang (deg) 53.9 49.6 45.4 41.9 37.6 35.0 32.6 28.1 27.1 22.8 21.4 19.0 15.3 13.3 10.4 7.8 6.2 3.9 1.7 -1.3 -3.5 -6.6 -10.5 -13.1 -17.0 -21.0 mag (U) 0.763 0.757 0.699 0.701 0.667 0.660 0.651 0.636 0.642 0.636 0.640 0.640 0.640 0.643 0.644 0.648 0.651 0.659 0.662 0.676 0.683 0.697 0.706 0.722 0.733 0.747 S 22 ang (deg) -47.8 -56.9 -63.4 -70.6 -77.0 -83.2 -88.6 -94.7 -99.9 -105.8 -110.2 -115.1 -119.4 -123.5 -127.8 -131.7 -135.3 -139.5 -143.0 -147.1 -150.9 -154.6 -158.4 -161.9 -165.5 -168.9 S 21 ang (deg) -177.6 172.6 164.1 155.4 147.8 140.2 133.3 126.4 120.3 113.7 108.0 102.0 96.9 91.6 86.3 81.2 76.5 71.9 67.3 62.7 58.3 54.1 50.0 46.3 42.6 39.6 NJG1312PC1 ( TOP VIEW ) 16 1 2 3 15 14 13 12 11 10 S11 4 5 6 7 8 9 S22 Rs 180Ω Ref. Ref. Driver Amp. Scattering Parameters -5- NJG1312PC1 nAPPLICATION CIRCUIT P2 C2 100pF C11 10pF C10 10pF 13 14 C9 C8 1000pF 39pF VDD=2.9V L3 15nH L2 15nH VCTR2 VCTR1 C7 100pF RFOUT C6 0.75pF 12 11 10 9 8 7 6 5 P1 C1 100pF 15 16 1 2 3 4 R2 180Ω C3 100pF L4 10nH L1 8.2nH NJG1312PC1 (TOP VIEW) R1 270Ω VDD C2 C9 C8 L3 GND C6 L2 R2 R1 L1 L4 P1 C1 PCB: FR-4 19.0x26.0mm, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Zo=50Ω) CHIP SIZE:1005 RFOUT C7 P2 C11 n RECOMMENDED PCB DESIGN VCTR2 VCTR1 C10 C3 [1] Chip parts list Parts ID C1~C11 L1~L4 Comment MURATA GRM36 Series TAIYO-YUDEN HK1005 Series -6- NJG1312PC1 n PACKAGE OUTLINE (FFP16-C1) 1pin INDEX 0.35 2pin INDEX 0.254±0.1 0.85±0.15 0.1 0 0.3 0 0 .30 2 .5 ± 0 . 1 0.5 0 0.5 0 0.20 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT : mm : Ceramic : Epoxy resin : Au : 15mg 0.1 7 0.365 0.27 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • D o NOT eat or put into mouth. • D o NOT dispose in fire or break up this product. • D o NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages . [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -7-