NJM2275F1

NJM2275 VHF/UHF BAND RF AMPLIFIER GENERAL DESCRIPTION The NJM2275 is a low current, low voltage RF amplifier, especially designed for VHF/UHF band. The center frequency of this narrow band amplifier is changed by external components. PACKAGE OUTLINE NJM2275F1 FEATURES Wide Operating Voltage Low Operating Current High Gain Power Gain Voltage Gain Operating Frequency band High Isolation (OUT to IN) Bipolar Technology Package Outline 1.8V to 6V 0.8mA type. @ V+ =1.9V, no signal input 15dB @1.9V, 400MHz input 30dB @1.9V, 400MHz input, 1kΩ load Up to 800MHz 45dB @1.9V, 400MHz SOT23-6 (MTP6) PIN CONFIGULATION Orientation Mark 1 2 3 Top View Simplified Block Diagram 6 5 4 Pin Function 1. RF IN 2. GND 3. BIAS CAP 4. RF OUT 5. IREF 6. V+ RF IN 1 GND 2 BIAS CAP 3 V+ 6 I REF 5 RF OUT 4 RF IN 1 GND 2 BIAS CAP 3 V+ 6 I REF 5 RF OUT 4 Ver.2005-06-01 -1- NJM2275 ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Power Dissipation RF Input Level Operating Temperature Storage Temperature SYMBOL V+ PD Pinmax Topr Tstg RATINGS 10.0 200 6 - 40 to + 85 - 40 to +125 (Ta=25°C) UNIT V mW dBm °C °C (Ta=25°C) MIN. 1.8 TYP. 1.9 MAX. 6.0 UNIT V RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage SYMBOL V+ TEST CONDITIONS ELECTRICAL CHARACTERISTICS PARAMETER Operating Current Power Gain Voltage Gain Noise Figure Input Return Loss Output Return Loss RF OUT - RF IN Isolation Power Input at 1dB compression Point (Ta=25°C, V+=1.9V, fin=400MHz, unless otherwise noted) SYMBOL Icc PG VG NF l S 11l l S 22l I SL P–1dB TEST CONDITIONS No signal Pin= - 40dBm Test circuit 1 Pin= - 40dBm Test circuit 2 Test Circuit 3 Pin= - 40dBm Test Circuit 4 Pin= - 40dBm Test Circuit 4 Pin= - 40dBm Test Circuit1 Test Circuit1 MIN. TYP. 0.8 15 30 2.2 -8 - 20 45 - 28 MAX. 1.0 UNIT mA dB dB dB dB dB dB dBm Ver.2005-06-01 -2- NJM2275 TEST CIRCUIT These test circuits allow the measurement of all parameters described in “ELECTRICAL CHARACTERISTICS”. Test Circuit 1 for Icc, PG , P–1dB and Pin vs. Pout L in 27n C in 1000p RF IN 1 V+ 6 I REF 5 RF OUT 4 Cre f 1000p V+ Cv 1000p SG (50Ω) GND 2 Cb BIAS CAP 1000p 3 CL 2p Lout Cout 15n 8p RL 0Ω Spectrum Analyzer (Zin=50Ω) Test Circuit 2 for VG L in 27n C in 1000p RF IN 1 V+ 6 I REF 5 RF OUT 4 Lout 27n Cref 1000p V+ Cv 1000p SG (50Ω) GND 2 Cb BIAS CAP 1000p 3 CL RL 1000p 1k Ω Cout 4p Spectrum Analyzer (Zin=50Ω) PG and VG has the following relation. PG = Pout – Pin VG = (Pout + Prl ) – Pin where Pin = input level in dBm Pout = output level in dBm Prl = the loss caused by the voltage drop of RL. RL is 1000 Ω. The input impedance of spectrum analyzer Zin is 50Ω. Prl is calculated from Prl = 20log ( ( RL + Zin) / RL) Prl = 20 log (1050 / 50 ) Ver.2005-06-01 -3- NJM2275 Test Circuit 3 for NF L in 27n C in 1000p RF IN 1 GND 2 V+ 6 I REF 5 RF OUT 4 Cref 1000p V+ Cv 1000p Cb BIAS CAP 1000p 3 CL 2p Lout Cout 15n 8p NF m eter Test Circuit 4 for lS11l and lS22l L in 27n C in 1000p RF IN 1 GND 2 V+ 6 I REF 5 RF OUT 4 Cref 1000p V+ Cv 1000p Cb1 1000p BIAS CAP 3 CL 2p Lout Cout 15n 8p Netw ork Analyzer Test Circuit 5 for S-Parameters (this item is not specified in “ELECTRICAL CHARACTERISTICS”) RF IN 1 GND 2 Cb1 1000p Cb2 0.1u BIAS CAP 3 V+ 6 I REF 5 RF OUT 4 Cv1 1000p Cref1 1000p V+ Cv2 0.1u Cref2 0.1u Netw ork Analyzer Port1 Port2 HP8753D Ver.2005-06-01 -4- NJM2275 EVALUATION PC BOARD The evaluation board is useful for your design and to have more understanding of the usage and performance of this device. This circuit is the same as TEST CIRCUIT. Note that this board is not prepared to show the recommendation of pattern and parts layout. Circuit Diagram V+ C in 1000p RF IN L in 27n RF IN 1 GND 2 Cb BIAS CAP 1000p 3 V+ 6 I REF 5 RF OUT 4 Lout Cout 15n 8p Cre f 1000p Cv 1000p CL 2p RL 0Ω RF OUT Evaluation PC Board V + Lout Cv 1608 Cout 1608 Cin RFIN 1608 1608 Cl 1608 Rl 1608 RFOUT Lin 1608 ① Cref 1608 1608 Cb Pin1 This evaluation board is designed to have the maximum value of PG at 400MHz. By using the value of Test Circuit2, this board can have the maximum value of VG at 400MHz. Cref is effective to obtain good NF. However, if the ground has a large noisy signal, NF may become worse. Ver.2005-06-01 -5- NJM2275 TERMINAL FUNCTION (Ta=25°C, V+=1.9 V) Pin No. SYMBOL EQUIVARENT CIRCUIT 6 VOLTAGE RF Input FUNCTION 2k 1 1 RF IN 3 1.09V 500 2 2 GND 6 -- -- Ground Bias Capacitance An external decoupling capacitor is placed between this pin and ground. 2k 1 3 BIAS CAP 3 0.33V 500 2 6 RF Output 5k 4 RF OUT 4 V+ 2 6 5 IREF 5 70 0.75V 2 Reference of Current Source An external decoupling capacitor is placed between this pin and ground. An external resistor from this pin to ground can controls the reference current of current source and the related performances, such as NF and gain. Supply Voltage ESD protection transistor exists between V+ and ground. 6 6 V+ 2 -- Ver.2005-06-01 -6- NJM2275 TYPICAL CHARACTERISTICS ( Ta=25°C, V+=1.9V, unless otherwise noted ) Operating Current Icc versus Supply Voltage V+ 1.4 No signal Power Gain PG versus Supply Voltage V+ 25 Test circuit 1 1.2 1 Icc(mA) 25°C 85°C 20 PG(dB) 0.8 0.6 0.4 0.2 0 1 2 3 4 V+(V) 5 6 7 125°C -40°C 15 -40°C 25°C 85°C 125°C 10 5 1 2 3 4 V+(V) 5 6 7 -20 -22 P-1dB(dBm) Pin at 1dB Compression Point P-1dB versus Supply Voltage V+ Test circuit 1 Voltage Gain VG versus Supply Voltage V+ 40 Test circuit 2 -24 -26 -28 -30 -32 -34 1 2 3 4 V+(V) 5 6 7 125°C 85°C 25°C -40°C 35 VG(dB) 30 -40°C 25°C 85°C 125°C 25 20 1 2 3 4 V+（ V） 5 6 7 Noise Figure NF versus Supply Voltage V+ 5.0 4.0 ISL(dB) NF(dB) 60 Test circuit 3 RF OUT-RF IN Isolation ISL versus Supply Voltage V+ Test circuit 1 55 125°C 85°C 25°C -40°C 125°C 25°C 3.0 2.0 1.0 0.0 1 2 3 4 V+（ V） 5 6 50 85°C -40°C 45 40 7 1 2 3 4 V+（ V) 5 6 7 Ver.2005-06-01 -7- NJM2275 1.4 No signal Operating Current Icc versus Ambient Temperature Ta Power Gain PG versus Ambient Temperature Ta 25 Test circuit 1 1.2 1 Icc(mA) 6V 4V 1.9V 1.8V 20 PG(dB) 6V 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 Ta(°C) 15 1.9V 1.8V 10 5 75 100 125 -50 -25 0 25 50 Ta(°C) 75 100 125 -20 -22 P-1dB(dBm) Pin at 1dB Compression Point P-1dB versus Ambient Temperature Ta Test circuit 1 40 Voltage Gain VG versus Ambient Temperature Ta Test circuit 2 -24 VG(dB) 35 1.8V,1.9V,6V -26 -28 -30 -32 -34 -50 -25 0 25 50 Ta(°C) 75 6V 30 1.9V 1.8V 25 20 100 125 -50 -25 0 25 50 Ta(°C) 75 100 125 Noise Figure NF versus Ambient Temperature Ta 5.0 Test circuit 3 60 RF OUT-RF IN Isolation ISL versus Ambient Tempeature Ta Test circuit 1 4.0 1.8V, 1.9V 55 ISL(dB) 6V 4V NF (dB) 3.0 2.0 4V, 6V 50 1.9V 1.0 0.0 -50 -25 0 25 50 Ta(°C) 75 100 125 45 1.8V 40 -50 -25 0 25 50 Ta（ °C） 75 100 125 Ver.2005-06-01 -8- NJM2275 10 0 Pout(dBm) Output Power Pout/Operating Current Icc versus Input Power Pin V+=1.9V fin=400MHz 12 10 8 Icc(mA) PG (dB) 20 18 16 14 12 10 8 6 4 2 0 380 Power Gain PG/Noise Figure NF versus Frequency fin 10 9 8 7 5 4 6 Pout PG -10 -20 -30 Icc -40 -50 -60 -50 -40 -30 -20 Pin(dBm) -10 0 10 20 6 4 2 0 NF 3 2 1 0 390 400 fin (MHz) 410 420 0 Input Return Loss |S11| versus Supply Voltage V+ Test circuit 4 -10 Output Return Loss |S22| versus Supply Voltage V+ Test circuit 4 -40°C |S11| (dB) -10 125°C 85°C 25°C -40°C |S22| (dB) -5 -15 125°C 25°C -20 -15 0 1 2 3 V+ (V) 4 5 6 7 -25 0 1 2 3 V+ (V) 4 5 85°C 6 7 0 Input Return Loss |S11| versus Ambient Temperature Ta(°C) Test circuit 4 -10 4V, 6V Output Return Loss |S22| versus Ambient Temperature Ta(°C) Test circuit 4 |S11| (dB) |S22| (dB) -5 -15 1.8V 1.9V -10 1.8V, 1.9V -20 -15 -50 -25 0 25 50 Ta(°C) 75 100 125 4V 6V -25 -50 -25 0 25 50 Ta(°C) 75 100 125 Ver.2005-06-01 -9- NF (dB) NJM2275 S Paramater (reference) Input Reflection Coefficient S11 versus Frequency Test circuit 5 0 -2 0 -2 Output Reflection Coefficient S22 Test circuit 5 versus Frequency S11 (dB) -4 -6 -8 -10 0 200 400 600 Frequency (MHz) 800 1000 S22 (dB) -4 -6 -8 -10 0 200 400 600 Frequency (MHz) 800 1000 0 -10 -20 Forward Transmission Coefficient S12 Test circuit 5 versus Frequency 10 8 Reverse Transmission Coefficient S21 Test circuit 5 versus Frequency S12 (dB) -40 -50 -60 -70 -80 -90 0 200 400 600 Frequency (MHz) 800 1000 S21 (dB) -30 6 4 2 0 0 200 400 600 Frequency (MHz) 800 1000 MHz 50 100 300 322 400 430 500 700 1000 S11 S21 S12 S22 mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg) 0.95 -2.16 2.23 178.17 0.002 81.16 1.00 -0.42 0.91 -14.64 2.14 161.70 0.004 -162.40 0.99 -3.27 0.84 -45.83 1.99 130.37 0.003 1.93 0.99 -10.85 0.82 -46.06 2.02 125.33 0.004 109.90 0.98 -9.94 0.75 -57.89 1.92 112.13 0.003 115.87 0.98 -12.42 0.75 -61.93 1.91 107.89 0.003 143.47 0.98 -13.94 0.70 -71.95 1.82 96.80 0.005 62.77 0.98 -16.36 0.54 -100.22 1.61 67.85 0.002 160.15 0.96 -21.84 0.39 -146.15 1.35 26.94 0.008 60.40 0.92 -34.32 Ver.2005-06-01 - 10 - NJM2275 S11 Test circuit 5 S22 +j50 Test circuit 5 +j50 +j25 +j100 +j25 +j100 0　　　　　　 25 50　　　　　 150 1000MHz 800MHz 700MHz 500MHz 300MHz 400MHz 10MHz 40MHz 100MHz 0　　　　　　 25 50　　　　 150 10MHz 40MHz 100MHz 300MHz 400MHz 500MHz 700MHz 800MHz 1000MHz -j25 -j50 -j100 -j25 -j50 -j100 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Ver.2005-06-01 - 11 -