CF5010FNE

SM5010 series Crystal Oscillator Module ICs OVERVIEW The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits, employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for design and application optimization. FEATURES I 7 types of oscillation circuit structure For fundamental oscillator • 5010A×× : Simple structure with low frequency variation • 5010B×× : Low crystal current type with RD built-in oscillation circuit • 5010CL× : Oscillation stop function built-in • 5010DN× : External capacitors, CG and CD required • 5010EA× : Low current consumption type For 3rd overtone oscillator • 5010F×× : Suitable for round blank • 5010H×× : External resistor, Rf required I I I I I I I I I 2.7 to 5.5V operating supply voltage Capacitors CG, CD built-in Inverter amplifier feedback resistor built-in Output duty level • TTL level: AK×, BK×, HK× • CMOS level: AN×, AH×, BN×, BH×, CL×, DN×, EA×, FN×, FH×, HN× Oscillator frequency output (fO, fO/2, fO/4, fO/8, fO/16 determined by internal connection) Standby function Pull-up resistor built-in 8-pin SOP (SM5010×××S) Chip form (CF5010×××) SERIES CONFIGURATION For Fundamental Oscillator Version1 CF5010AN1 CF5010AN2 CF5010AN3 CF5010AN4 CF5010AK1 CF5010AH1 CF5010AH2 CF5010AH3 CF5010AH4 CF5010BN1 CF5010BN2 CF5010BN3 CF5010BN4 CF5010BN5 CF5010BK1 CF5010BH1 CF5010BH2 CF5010BH3 CF5010BH4 CF5010CL1 CF5010CL2 CF5010CL3 CF5010CL4 CF5010CL5 CF5010DN1 CF5010EA1 CF5010EA2 Operating supply voltage range [V] Built-in capacitance CG CD [pF] [pF] RD [Ω] Output current Output duty (VDD = 5V) level [mA] CMOS 2.7 to 5.5 29 29 – 16 CMOS/TTL TTL Output frequency fO fO/2 fO/4 fO/8 fO fO fO/2 fO/4 fO/8 fO fO/2 fO/4 fO/8 fO/16 fO fO fO/2 fO/4 fO/8 fO fO/2 fO/4 fO/8 fO/16 fO fO fO/2 INHN input level (VDD = 5V) Standby mode Oscillator stop function Output state TTL No High impedance 4.5 to 5.5 29 29 – 16 TTL No High impedance 2.7 to 5.5 29 29 – 4 CMOS TTL No High impedance CMOS 2.7 to 5.5 22 22 820 16 CMOS/TTL TTL No High impedance 4.5 to 5.5 22 22 820 16 TTL TTL No High impedance 2.7 to 5.5 22 22 820 4 CMOS TTL No High impedance 2.7 to 5.5 18 18 – 16 CMOS CMOS Yes High impedance 2.7 to 5.5 2.7 to 5.5 – 10 – 15 820 820 16 4 CMOS CMOS TTL TTL No Yes High impedance LOW 1. Package devices have designation SM5010×××S. SEIKO NPC CORPORATION —1 SM5010 series SERIES CONFIGURATION For 3rd Overtone Oscillator Version CF5010FNA CF5010FNC CF5010FND CF5010FNE CF5010FHA CF5010FHC CF5010FHD CF5010FHE CF5010HN1 CF5010HK1 4.5 to 5.5 4.5 to 5.5 1.17 1.17 4.5 to 5.5 1.00 4.5 to 5.5 2.7 to 5.5 1.00 Operating supply voltage range [V] Built-in capacitance gm ratio CG [pF] 13 11 13 8 13 11 13 8 13 13 CD [pF] 15 17 17 15 15 17 17 15 17 17 Rf [kΩ] 4.2 3.1 2.2 2.2 4.2 3.1 2.2 2.2 200 200 16 16 CMOS TTL 4 CMOS 16 CMOS Output current (VDD = 5V) [mA] Output duty level ORDERING INFORMATION Device SM5010×××S CF5010×××–1 Package 8-pin SOP Chip form PACKAGE DIMENSIONS (Unit: mm) • 8-pin SOP 0.15 + 0.1 − 0.05 4.4 0.2 6.2 0.3 0.695typ 5.2 0.3 0.05 0.05 1.5 0.1 1.27 0.4 0.2 0.10 0.4 0.1 0.12 M 0 to 10 SEIKO NPC CORPORATION —2 SM5010 series PAD LAYOUT (Unit: µm) VDD Q (920,1180) PINOUT (Top view) Y HA5010 INHN XT XTN 1 2 3 4 8 7 6 5 VDD NC NC Q (0,0) INHN XT XTN VSS X Chip size: 0.92 × 1.18mm Chip thickness: 300 ± 30µm Chip base: VDD level VSS PIN DESCRIPTION and PAD DIMENSIONS Pad dimensions [µm] Number Name I/O Description X 1 2 3 4 5 6 7 8 INHN XT XTN VSS Q NC NC VDD I I O – O – – – Output state control input. Standby mode when LOW, pull-up resistor built in. In the case of the 5010CL×, the oscillator stops and Power-saving pull-up resistor is built-in to reduce current consumption at standby mode. Amplifier input. Amplifier output. Ground Output. Output frequency (fO, fO/2, fO/4, fO/8, fO/16) determined by internal connection No connection No connection Supply voltage Crystal oscillator connection pins. Crystal oscillator connected between XT and XTN 195 385 575 765 757.6 – – 165.4 Y 174.4 174.4 174.4 174.4 1017.6 – – 1014.6 SEIKO NPC CORPORATION —3 SM5010 series BLOCK DIAGRAM For Fundamental Oscillator I 5010A××, B××, CL×, DN×, EA× series VDD VSS XTN CG Rf CD RD 1/2 1/2 1/2 1/2 XT Q INHN For 3rd Overtone Oscillator I 5010F××, H×× series VDD VSS XTN CG Rf CD XT Q INHN SEIKO NPC CORPORATION —4 SM5010 series FUNCTIONAL DESCRIPTION Standby Function 5010AH×, AK×, AN×, BH×, BK×, BN×, DN×, FN×, FH×, HN×, HK× series When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. 5010CL× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. 5010EA× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW. Version AH×, AK×, AN×, BH×, BK×, BN×, DN×, FH×, FH×, HN×, HK× series CL× series INHN HIGH (or open) LOW HIGH (or open) LOW HIGH (or open) LOW Q Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency High impedance Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency High impedance Either fO or fO/2 output frequency LOW Oscillator Normal operation Normal operation Normal operation Stopped Normal operation Stopped EA× series Power-saving Pull-up Resistor (CL series only) The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. SEIKO NPC CORPORATION —5 SM5010 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Symbol VDD VIN VOUT Topr Chip form Tstg 8-pin SOP AH×, BH×, FH×, EA× Output current IOUT PD AN×, AK×, BN×, BK×, CL×, DN×, FN×, HN×, HK× 8-pin SOP Condition Rating −0.5 to +7.0 −0.5 to VDD + 0.5 −0.5 to VDD + 0.5 −40 to +85 −65 to +150 −55 to +125 10 mA 25 500 mW Unit V V V °C °C Power dissipation Recommended Operating Conditions 3V operation VSS = 0V Parameter Operating supply voltage Input voltage Symbol VDD VIN Version All version All version 5010AN× 5010AH× 5010BN× Operating temperature TOPR 5010BH× 5010CL× 5010DN1 5010EA× 5010FN× 5010AN× 5010AH× 5010BN× Operating frequency f 5010BH× 5010CL× 5010DN1 5010EA× 5010FN× 22 to 40 CL ≤ 15pF 2 to 30 2 to 16 2 to 30 2 to 16 MHz 2 to 30 −10 to +70 −20 to +80 −10 to +70 Condition Rating 2.7 to 3.6 VSS to VDD Unit V V °C SEIKO NPC CORPORATION —6 SM5010 series 5V operation VSS = 0V Parameter Operating supply voltage Input voltage Symbol VDD VIN Version All version All version 5010AN× 5010AK× 5010AH× 5010BN× 5010BK× 5010BH× 5010CL× 5010DN1 Operating temperature TOPR 5010EA× CL ≤ 15pF, f = 2 to 30MHz CL ≤ 15pF, f = 2 to 40MHz CL ≤ 50pF, 30MHz ≤ f ≤ 50MHz CL ≤ 15pF, 50MHz ≤ f ≤ 70MHz CL ≤ 15pF, 30MHz ≤ f ≤ 50MHz CL ≤ 15pF, 50MHz ≤ f ≤ 60MHz −10 to +70 −20 to +80 −15 to +75 −20 to +80 −15 to +75 −40 to +85 CL ≤ 50pF CL ≤ 15pF CL ≤ 50pF CL ≤ 15pF °C −40 to +85 Condition Rating 4.5 to 5.5 VSS to VDD Unit V V 5010FN× 5010FH× 5010HN1 5010HK1 5010AN× 5010AK× 5010AH× 5010BN× 5010BK× 5010BH× 5010CL× Operating frequency f 5010DN1 5010EA× 5010FN× 2 to 30 CL ≤ 50pF CL ≤ 15pF, Ta = − 40 to + 85°C CL ≤ 50pF, Ta = − 20 to + 80°C CL ≤ 15pF, Ta = − 15 to + 75°C CL ≤ 15pF, Ta = − 20 to + 80°C CL ≤ 15pF, Ta = − 15 to + 75°C CL ≤ 50pF CL ≤ 15pF 2 to 40 30 to 50 50 to 70 30 to 50 50 to 60 22 to 50 MHz 5010FH× 5010HN1 5010HK1 SEIKO NPC CORPORATION —7 SM5010 series Electrical Characteristics 5010AN×, BN×, DN× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD VOL = VSS 5010×N1 5010×N2 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010×N3 5010×N4 5010×N5 INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance RUP2 Rf RD CG Built-in capacitance CD Measurement cct 4 Measurement cct 5 Design value 5010B×× 5010A×× Design value. A monitor pattern on a wafer is tested. 5010B×× 5010A×× 5010B×× Rating min 2.1 – 2.0 – – – – – – – – 40 80 690 26 20 26 20 typ 2.4 0.3 – – – – 5 3.5 2.5 2 2 100 200 820 29 22 29 22 max – 0.4 – 0.5 10 10 10 7 5 4 4 250 500 940 32 24 32 24 pF kΩ kΩ Ω mA Unit V V V V µA 5010AN×, AK×, BN×, BK×, DN× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD VOL = VSS 5010×N1 5010×N2 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 30MHz 5010×N3 5010×N4 5010×N5 Measurement cct 3, load cct 2, INHN = open, CL = 15pF, f = 30MHz INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance RUP2 Rf RD CG Built-in capacitance CD Measurement cct 4 Measurement cct 5 Design value 5010B×× 5010A×× Design value. A monitor pattern on a wafer is tested. 5010B×× 5010A×× 5010B×× 5010×K1 Rating min 3.9 – 2.0 – – – – – – – – – 40 80 690 26 20 26 20 typ 4.2 0.3 – – – – 15 9 6 5 5 10 100 200 820 29 22 29 22 max – 0.4 – 0.8 10 10 30 18 12 10 10 20 250 500 940 32 24 32 24 pF kΩ kΩ Ω mA Unit V V V V µA SEIKO NPC CORPORATION —8 SM5010 series 5010AH×, BH× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD VOL = VSS 5010×H1 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 16MHz 5010×H2 5010×H3 5010×H4 INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance RUP2 Rf RD CG Built-in capacitance CD Design value. A monitor pattern on a wafer is tested. Measurement cct 4 Measurement cct 5 Design value 5010B×× 5010A×× 5010B×× 5010A×× 5010B×× 2.1 – 2.0 – – – – – – – 40 80 690 26 20 26 20 typ 2.4 0.3 – – – – 3 2 1.5 1.5 100 200 820 29 22 29 22 max – 0.5 – 0.5 10 µA 10 6 4 mA 3 2.5 250 500 940 32 24 pF 32 24 kΩ kΩ Ω V V V V Unit 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD VOL = VSS 5010×H1 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010×H2 5010×H3 5010×H4 INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance RUP2 Rf RD CG Built-in capacitance CD Design value. A monitor pattern on a wafer is tested. Measurement cct 4 Measurement cct 5 Design value 5010B×× 5010A×× 5010B×× 5010A×× 5010B×× 3.9 – 2.0 – – – – – – – 40 80 690 26 20 26 20 typ 4.2 0.3 – – – – 9 6 5 4 100 200 820 29 22 29 22 max – 0.5 – 0.8 10 µA 10 18 12 mA 10 8 250 500 940 32 24 pF 32 24 kΩ kΩ Ω V V V V Unit SEIKO NPC CORPORATION —9 SM5010 series 5010CL× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD VOL = VSS 5010CL1 5010CL2 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010CL3 5010CL4 5010CL5 Standby current INHN pull-up resistance Feedback resistance Built-in capacitance IST RUP1 RUP2 Rf CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. 16 18 20 Measurement cct 6, INHN = LOW Measurement cct 4 40 80 16 100 200 18 250 500 20 pF 2.2 – 0.7VDD – – – – – – – – – 2 typ 2.4 0.3 – – – – 5 3.5 2.5 2 2 – 4 max – 0.4 – 0.3VDD 10 µA 10 10 7 5 4 4 5 15 µA MΩ kΩ kΩ mA V V V V Unit 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD VOL = VSS 5010CL1 5010CL2 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 30MHz 5010CL3 5010CL4 5010CL5 Standby current INHN pull-up resistance Feedback resistance Built-in capacitance IST RUP1 RUP2 Rf CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. 16 18 20 Measurement cct 6, INHN = LOW Measurement cct 4 40 80 16 100 200 18 250 500 20 pF 4.0 – 0.7VDD – – – – – – – – – 1 typ 4.2 0.3 – – – – 15 9 6 5 5 – 2 max – 0.4 – 0.3VDD 10 µA 10 30 18 12 10 10 10 8 µA MΩ kΩ kΩ mA V V V V Unit SEIKO NPC CORPORATION —10 SM5010 series 5010EA× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Current consumption INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance Symbol VOH VOL VIH VIL IDD RUP2 Rf RD CG CD Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA INHN INHN Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz Measurement cct 4 Measurement cct 5 Design value 5010EA1 5010EA2 2.1 – 2.0 – – – 40 80 690 9 Design value. A monitor pattern on a wafer is tested. 13 15 17 typ 2.4 0.3 – – 4 2.5 100 200 820 10 max – 0.5 – 0.5 8 mA 5 250 500 940 11 pF kΩ kΩ Ω V V V V Unit 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Symbol VOH VOL VIH VIL IDD1 Current consumption IDD2 INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance RUP2 Rf RD CG CD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 40MHz Measurement cct 4 Measurement cct 5 Design value 5010EA1 5010EA2 – – 40 80 690 9 Design value. A monitor pattern on a wafer is tested. 13 15 17 9 6 100 200 820 10 18 12 250 500 940 11 pF kΩ kΩ Ω Condition min Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA INHN INHN Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010EA1 5010EA2 3.9 – 2.0 – – – typ 4.2 0.3 – – 6 5 max – 0.4 – 0.8 12 10 mA V V V V Unit SEIKO NPC CORPORATION —11 SM5010 series 5010FN× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD VOL = VSS 5010FNA, FNC f = 30MHz 5010FND f = 40MHz 2.2 – 2.0 – – – – – 40 5010FNA Feedback resistance Rf Measurement cct 5 5010FNC 5010FND 5010FNA CG Built-in capacitance CD Design value. A monitor pattern on a wafer is tested. 5010FNC 5010FND 5010FNA 5010FNC 5010FND 3.57 2.63 1.87 11.7 9.9 11.7 13.5 15.3 15.3 typ 2.4 0.3 – – – – 8 10 100 4.2 3.1 2.2 13 11 13 15 17 17 max – 0.4 – 0.5 10 µA 10 16 mA 20 250 4.83 3.57 2.53 14.3 12.1 14.3 pF 16.5 18.7 18.7 kΩ kΩ V V V V Unit Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF Measurement cct 4 INHN pull-up resistance RUP SEIKO NPC CORPORATION —12 SM5010 series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ IDD1 Current consumption IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 50pF Measurement cct 4 5010FNA 5010FNC Feedback resistance Rf Measurement cct 5 5010FND 5010FNE 5010FNA 5010FNC CG Design value. A monitor pattern on a wafer is tested. CD 5010FND 5010FNE 5010FNA 5010FNC 5010FND 5010FNE 1.87 1.87 11.7 9.9 11.7 7.2 13.5 15.3 15.3 13.5 2.2 2.2 13 11 13 8 15 17 17 15 2.53 2.53 14.3 12.1 14.3 8.8 pF 16.5 18.7 18.7 16.5 Condition min Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V Measurement cct 3, load cct 1, INHN = open, CL = 15pF VOH = VDD VOL = VSS 5010FNE f = 70MHz 5010FNA, FNC f = 40MHz 5010FND f = 50MHz 3.9 – 2.0 – – – – – – 40 3.57 2.63 typ 4.2 0.3 – – – – 25 23 25 100 4.2 3.1 max – 0.4 – 0.8 10 µA 10 50 45 50 250 4.83 3.57 kΩ kΩ mA V V V V Unit INHN pull-up resistance RUP Built-in capacitance SEIKO NPC CORPORATION —13 SM5010 series 5010FH× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD VOL = VSS 5010FHA, FHC f = 40MHz Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FHD f = 50MHz 5010FHE f = 60MHz INHN pull-up resistance RUP Measurement cct 4 5010FHA Feedback resistance Rf Measurement cct 5 5010FHC 5010FHD 5010FHE 5010FHA CG Built-in capacitance Design value. A monitor pattern on a wafer is tested. CD 5010FHC 5010FHD 5010FHE 5010FHA 5010FHC 5010FHD 5010FHE Rating min 3.9 – 2.0 – – – – – – 40 3.57 2.63 1.87 1.87 11.7 9.9 11.7 7.2 13.5 15.3 15.3 13.5 typ 4.2 0.3 – – – – 13 15 17 100 4.2 3.1 2.2 2.2 13 11 13 8 15 17 17 15 max – 0.5 – 0.8 10 10 26 30 34 250 4.83 3.57 2.53 2.53 14.3 12.1 14.3 8.8 16.5 18.7 18.7 16.5 pF kΩ kΩ mA Unit V V V V µA 5010HN×, HK× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ IDD1 Current consumption IDD2 INHN pull-up resistance Feedback resistance Built-in capacitance RUP Rf CG CD Condition Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA INHN INHN Q: Measurement cct 2, INHN = LOW, VDD = 5.5V Measurement cct 3, load cct 2, INHN = open, CL = 15pF, f = 50MHz Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 50MHz Measurement cct 4 Measurement cct 5 Design value. A monitor pattern on a wafer is tested. VOH = VDD VOL = VSS 5010HK1 5010HN1 Rating min 3.9 – 2.0 – – – – – 40 80 11.7 15.3 typ 4.2 0.3 – – – – 20 25 100 200 13 17 max – 0.4 – 0.8 10 10 40 mA 50 250 500 14.3 18.7 kΩ kΩ pF Unit V V V V µA SEIKO NPC CORPORATION —14 SM5010 series Switching Characteristics 5010AN×, BN×, DN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 40 – – typ 3.0 3.0 – – – max 6.0 6.0 60 100 100 ns ns % ns ns Unit 1. The duty cycle characteristic is checked the sample chips of each production lot. 5010AN×, AK×, BN×, BK×, DN× series 5V operation/Duty level: CMOS (5010AN×, BN×, DN1) VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time Output duty cycle1 Output disable delay time Output enable delay time tf1 tf2 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 50pF CL = 15pF CL = 50pF – – – – 45 – – typ 2.0 4.0 2.0 4.0 – – – max 4.0 ns 8.0 4.0 ns 8.0 55 100 100 % ns ns Unit Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5) VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr3 tf3 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 2, CL = 15pF, 0.4V to 2.4V Measurement cct 6, load cct 2, CL = 15pF, 2.4V to 0.4V Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 45 – – typ 1.5 1.5 – – – max 3.0 3.0 55 100 100 ns ns % ns ns Unit 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —15 SM5010 series 5010AH×, BH× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 16MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 40 – – typ 8 8 – – – max 16 16 60 100 100 ns ns % ns ns Unit 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time Output duty cycle1 Output disable delay time Output enable delay time tf1 tf2 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 50pF CL = 15pF CL = 50pF – – – – 45 – – typ 5 13 5 13 – – – max 10 ns 26 10 ns 26 55 100 100 % ns ns Unit Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —16 SM5010 series 5010CL× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter Symbol tr1 tr4 Output fall time Output duty cycle1 Output disable delay time2 Output enable delay time2 tf1 tf4 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 30pF CL = 15pF CL = 30pF – – – – 45 – – typ 2.0 3.0 2.0 3.0 – – – max 4.0 ns 6.0 4.0 ns 6.0 55 100 100 % ns ns Unit Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time Output duty cycle1 Output disable delay time2 Output enable delay time2 tf1 tf2 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 50pF CL = 15pF CL = 50pF – – – – 40 – – typ 1.5 4.0 1.5 4.0 – – – max 3.0 ns 8.0 3.0 ns 8.0 60 100 100 % ns ns Unit Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. SEIKO NPC CORPORATION —17 SM5010 series 5010EA× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time2 Output enable delay time2 Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 40 – – typ 8 8 – – – max 16 16 60 100 100 ns ns % ns ns Unit 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Output disable delay time2 Output enable delay time2 Duty1 Duty2 tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF f = 30MHz f = 40MHz – – – – 45 40 – – typ 5 13 5 13 – – – – max 10 ns 26 10 ns 26 55 % 60 100 100 ns ns Unit Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. SEIKO NPC CORPORATION —18 SM5010 series 5010FN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 40MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 40 – – typ 3.0 3.0 – – – max 6.0 6.0 60 100 100 ns ns % ns ns Unit 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 50pF CL = 15pF CL = 50pF CL = 50pF f = 50MHz CL = 15pF f = 70MHz – – – – 45 40 – – typ 1.5 3.0 1.5 3.0 – – – – max 3.0 ns 6.0 3.0 ns 6.0 55 % 60 100 100 ns ns Unit Output duty cycle1 Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C Output disable delay time Output enable delay time tPLZ tPZL Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —19 SM5010 series 5010FH× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Output disable delay time Output enable delay time Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF f = 50MHz f = 60MHz – – – – 45 40 – – typ 4 11 4 11 – – – – max 8 ns 21 8 ns 21 55 % 60 100 100 ns ns Unit Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5010HN× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr1 tr2 Output fall time Output duty cycle1 Output disable delay time Output enable delay time tf1 tf2 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF CL = 50pF CL = 15pF CL = 50pF – – – – 45 – – typ 1.5 3.0 1.5 3.0 – – – max 3.0 ns 6.0 3.0 ns 6.0 55 100 100 % ns ns Unit Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 50MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —20 SM5010 series 5010HK× series 5V operation/Duty level: TTL VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr3 tr5 Output fall time Output duty cycle1 Output disable delay time Output enable delay time tf3 tf5 Duty tPLZ tPZL Condition min Output rise time Measurement cct 6, load cct 2, 0.4V to 2.4V Measurement cct 6, load cct 2, 2.4V to 0.4V CL = 15pF CL = 50pF CL = 15pF CL = 50pF – – – – 45 – – typ 1.2 2.0 1.2 2.0 – – – max 2.4 ns 5.0 2.4 ns 5.0 55 100 100 % ns ns Unit Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 50MHz Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. Current consumption and Output waveform with NPC’s standard crystal for Fundamental oscillator f [MHz] 30 R [Ω] 17.2 16.8 L [mH] 4.36 2.90 Ca [fF] 6.46 5.47 Cb [pF] 2.26 2.08 Cb 40 for 3rd overtone oscillator f [MHz] R [Ω] 18.62 20.53 22.17 15.37 25.42 L [mH] 16.24 11.34 7.40 3.83 4.18 Ca [fF] 1.733 1.396 1.370 1.836 1.254 Cb [pF] 5.337 3.989 4.105 5.191 5.170 L Ca R 30 40 50 60 70 SEIKO NPC CORPORATION —21 SM5010 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 VDD VDD Q R2 Signal Generator R1 C1 XT VSS RUP1 = VSS INHN VDD IPR (VIL = 0V) V Q output VOH 0V RUP2 = VDD VIH (V IH = 0.7V DD) IPR VIH VIL A IPR 2.0VP−P , 10MHz sine wave input signal (3V operation) 3.5VP−P , 10MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R2 : 5010AN×, BN×, DN×, AK×, BK× 3V operation: 263Ω 5V operation: 245Ω 5010FN×, HN×, HK× 3V operation: 275Ω 5V operation: 245Ω 5010CL× 3V operation: 275Ω 5V operation: 250Ω 5010EA×, AH×, BH× 3V operation: 1050Ω 5010EA×, AH×, BH×, FH× 5V operation: 975Ω Measurement cct 5 VDD XT Rf = XTN VSS VDD IRf A IRf Measurement cct 2 Measurement cct 6 IZ, IOL VDD Q INHN VSS IZ A A CG XT Rfo CD X'tal XTN INHN VDD IST V VOL Q VSS Measurement cct 3 Crystal oscillation CG, CD: 22pF (5010DN×) Rfo: 3.0kΩ (5010H××) A VDD IDD Measurement cct 7 Signal Generator R1 C1 XT VSS Q VDD Signal Generator R1 XT Q VSS INHN 2.0VP−P , 30MHz sine wave input signal (3V operation) 3.5VP−P , 30MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R1 : 50Ω SEIKO NPC CORPORATION —22 SM5010 series Load cct 1 Load cct 2 Q output CL (Including probe capacitance) R Q output CL (Including probe capacitance) CL = 15pF : DUTY, IDD , tr3 , tf3 CL = 50pF : tr5 , tf5 R = 400Ω CL = 15pF : DUTY , IDD , tr1 , tf1 CL = 30pF : tr4 , tf4 CL = 50pF : tr2 , tf2 Switching Time Measurement Waveform Output duty level (CMOS) Q output 0.9VDD 0.1VDD TW 0.9VDD 0.1VDD DUTY measurement voltage (0.5V DD ) tr Output duty level (TTL) tf Q output 2.4V 0.4V TW 2.4V 0.4V DUTY measurement voltage (1.4V ) tr Output duty cycle (CMOS) tf Q output TW T DUTY measurement voltage (0.5V DD) DUTY= TW/ T 100 (%) Output duty cycle (TTL) Q output TW T DUTY measurement voltage (1.4V ) DUTY= TW/ T 100 (%) SEIKO NPC CORPORATION —23 SM5010 series Output Enable/Disable Delay INHN VIL VIH tPLZ Q output tPZL INHN input waveform tr = tf 10ns Note (CL×/EA× series only): when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. SEIKO NPC CORPORATION —24 SM5010 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp NC0015DE 2006.04 SEIKO NPC CORPORATION —25