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CF5012ANB-1

CF5012ANB-1

  • 厂商:

    NPC

  • 封装:

  • 描述:

    CF5012ANB-1 - Low-current Consumption Crystal Oscillator Module ICs - Nippon Precision Circuits Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
CF5012ANB-1 数据手册
CF5012 series Low-current Consumption Crystal Oscillator Module ICs OVERVIEW The CF5012 series are low-current consumption 3rd-harmonic crystal oscillator module ICs. Internal circuit optimization means these devices have reduced current consumption in comparison with our existing 3rd-harmonic oscillator devices. The crystal oscillator circuit has a built-in thin-film feedback resistor with good temperature characteristics and built-in capacitors with excellent frequency response, resulting in a stable 3rdorder overtone oscillator with only the connection of a crystal element. FEATURES I I I I I I 3rd-harmonic oscillation 2.7 to 3.6V operating supply voltage range 30 to 45MHz recommended operating frequency range Inverter amplifier feedback resistor built-in Oscillator capacitors CG , CD built-in Output three-state function (high impedance in standby mode) I I I I I fO output frequency (oscillator frequency) 8mA output drive capability (VDD = 2.7V) 6.5mA (typ) low current consumption (VDD = 3V, CL = 15pF, f = 40MHz) CMOS output duty level Chip form (CF5012×××) SERIES CONFIGURATION Version CF5012ANB Recommended operating frequency [MHz] 30 to 45 Built-in capacitance [pF] gm ratio CG 1.0 8 CD 15 Rf [kΩ] 3.1 Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal. ORDERING INFORMATION Device CF5012×××–1 Package Chip form NIPPON PRECISION CIRCUITS INC.—1 CF5012 series PAD LAYOUT (Unit:µm) VDD Q (920,1180) Y HA5012ANB (0,0) INHN XTN XT VSS X Chip size: 0.92 × 1.18 mm Chip thickness: 300 ± 30 µm Chip base: VDD level PIN DESCRIPTION and PAD DIMENSIONS Pad dimensions [µm] Name INHN XT XTN VSS Q VDD I/O I I O – O – Description X Output state control input. High impedance when LOW. Pull-up resistor built in Amplifier input Amplifier output Ground Output. Output frequency. High impedance in standby mode Supply voltage Crystal oscillator connection pins. Crystal oscillator connected between XT and XTN 195 385 575 765 757.6 165.4 Y 174.4 174.4 174.4 174.4 1017.6 1014.6 BLOCK DIAGRAM VDD VSS XTN CG Rf CD XT Q INHN Substrate potential: VDD NIPPON PRECISION CIRCUITS INC.—2 CF5012 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current Symbol VDD VIN VOUT Topr Tstg IOUT Condition Rating −0.5 to +7.0 −0.5 to VDD + 0.5 −0.5 to VDD + 0.5 −40 to +85 −65 to +150 25 Unit V V V °C °C mA Recommended Operating Conditions VSS = 0V, f ≤ 45MHz, CL = 15pF unless otherwise noted. Rating Parameter Supply voltage Input voltage Operating temperature Symbol VDD VIN TOPR Condition min 2.7 VSS −20 typ – – – max 3.6 VDD +80 V V °C Unit Electrical Characteristics VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Current consumption INHN pull-up resistance Feedback resistance Built-in capacitance Symbol VOH VOL IZ VIH VIL IDD RUP Rf CG CD Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA Q: Measurement cct 2, INHN = LOW, VDD = 3.6V INHN INHN Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 40MHz Measurement cct 4 Measurement cct 5 Design value, determined by the internal wafer pattern 13 15 17 pF VOH = VDD VOL = VSS 2.2 – – – 0.7VDD – – 40 2.63 7 typ 2.4 0.3 – – – – 6.5 100 3.1 8 max – 0.4 10 10 – 0.3VDD 13 250 3.57 9 V V µA µA V V mA kΩ kΩ pF Unit NIPPON PRECISION CIRCUITS INC.—3 CF5012 series Switching Characteristics VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time 1. Monitored in sample lots. Symbol tr tf Duty tPLZ tPZL Condition min Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD , CL = 15pF Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD , CL = 15pF Measurement cct 3, load cct 1, Ta = 25°C, VDD = 3.0V, CL = 15pF, f = 40MHz Measurement cct 3, load cct 1, Ta = 25°C, VDD = 3.0V, CL = 15pF – – 40 – – typ 2.0 2.0 – – – max 4.0 4.0 60 100 100 ns ns % ns ns Unit Current consumption and Output waveform with NPC’s standard crystal Cb f (MHz) 40 R (Ω) 20.53 L (mH) 11.34 Ca (fF) 1.396 Cb (pF) 3.989 L Ca R FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the oscillator output on Q goes high impedance. INHN HIGH (or open) LOW Q fO output frequency High impedance Oscillator Normal operation Normal operation NIPPON PRECISION CIRCUITS INC.—4 CF5012 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 Signal Generator R1 C1 XT VDD Q VSS R2 VDD RUP = VSS INHN VDD IPR Q output VOH 0V IPR 2.0VP−P , 10MHz sine wave input signal C1 : 0.001µF R1 : 50Ω R2 : 275Ω A Measurement cct 2 Measurement cct 5 IOL, IZ VDD Q INHN VSS IZ VDD XT Rf = XTN VSS A V VOL A IRf VDD IRf Measurement cct 3 Load cct 1 A XT X'tal XTN VDD IDD Q output CL (Including probe capacitance) Q VSS INHN CL = 15pF NIPPON PRECISION CIRCUITS INC.—5 CF5012 series Switching Time Measurement Waveform Tr , Tf , Duty Q output 0.9V DD 0.1V DD TW 0.9V DD 0.1V DD DUTY measurement voltage (0.5V DD ) tr Output duty cycle tf Q output TW T DUTY measurement voltage (0.5V DD) DUTY= TW/ T 100 (%) Output Enable/Disable Delay INHN VIH VIL tPLZ Q output INHN input waveform tr = tf tPZL 10ns NIPPON PRECISION CIRCUITS INC.—6 CF5012 series NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome, Koto-ku, Tokyo 135-8430, Japan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co.jp/ Email: sales@npc.co.jp NC0111AE 2002.01 NIPPON PRECISION CIRCUITS INC.—7
CF5012ANB-1
物料型号: - 型号:CF5012系列

器件简介: - CF5012系列是低功耗的三次谐波晶体振荡器模块IC。内部电路优化使得这些设备与现有三次谐波振荡器设备相比具有更低的电流消耗。晶体振荡电路内置了具有良好温度特性的薄膜反馈电阻器和具有优异频率响应的内置电容器,只需连接晶体元件即可实现稳定的三次谐波振荡。

引脚分配: - INHN:输出状态控制输入,低电平时高阻态。内置上拉电阻。 - XT:放大器输入,晶体振荡器连接引脚。晶体振荡器连接在XT和XTN之间。 - XTN:放大器输出。 - VSS:地。 - Q:输出,输出频率。待机模式下高阻态。 - VDD:供电电压。

参数特性: - 第三次谐波振荡 - 工作供电电压范围:2.7V至3.6V - 推荐工作频率范围:30MHz至45MHz - 内置反相放大器反馈电阻器 - 内置振荡器电容器CG、CD - 输出三态功能(待机模式下高阻态)

功能详解: - 待机功能:当INHN为低电平时,Q引脚的振荡器输出呈现高阻态。

应用信息: - 该系列产品适用于需要低功耗和稳定振荡频率的应用场合。

封装信息: - 芯片形式封装:CF5012XXX
CF5012ANB-1 价格&库存

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