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CF5021AB-1

CF5021AB-1

  • 厂商:

    NPC

  • 封装:

  • 描述:

    CF5021AB-1 - Crystal Oscillator Module ICs - Nippon Precision Circuits Inc

  • 数据手册
  • 价格&库存
CF5021AB-1 数据手册
SM5021 series NIPPON PRECISION CIRCUITS INC. Crystal Oscillator Module ICs OVERVIEW The SM5021 series are crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS, that incorporate high-frequency, low current consumption oscillator and output buffer circuits. Highly accurate thin-film feedback resistors and high-frequency capacitors are built-in, eliminating the need for external components to make a stable 3rd-harmonic oscillator. FEATURES s s s s s 3rd overtone oscillation Capacitors CG, CD built-in Inverter amplifier feedback resistor built-in (A×, B× series) TTL input level 4 mA (VDD = 2.7 V) drive capability 8 mA (VDD = 4.5 V) drive capability s s s s s Output three-state function 2.7 to 5.5 V supply voltage (A×, K× series) 4.5 to 5.5 V supply voltage (B×, L× series) Oscillator frequency output 6-pin SOT (SM5021××H) Chip form (CF5021××) SERIES CONFIGURATION Supply voltage Chip S M5021AAH SM5021ABH SM5021ACH SM5021ADH SM5021AEH SM5021BAH SM5021BBH SM5021BCH SM5021BDH SM5021KDH SM5021KEH SM5021LDH 4.5 to 5.5 2.7 to 5.5 2.7 to 5.5 2.7 to 5.5 2.7 to 3.6 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 2.7 to 5.5 2.7 to 3.6 4.5 to 5.5 SOT 4.5 to 5.5 2.7 to 5.5 2.7 to 5.5 2.7 to 5.5 × 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 2.7 to 5.5 2.7 to 3.6 4.5 to 5.5 Recommended operating frequency range (MHz) 3V × 22 to 30 30 to 40 40 to 50 50 to 70 × × × × 22 to 50 50 to 70 × 5V 22 to 30 30 to 43 43 to 55 55 to 70 × 22 to 30 30 to 43 43 to 55 55 to 70 22 to 70 × 22 to 70 Built-in capacitance (pF) CG 8 8 8 8 8 8 8 8 8 8 8 8 CD 15 15 15 15 12 15 15 15 15 15 12 15 1 1 2 3 4 1 1 2 3 3 4 3 6.0 3.3 3.9 2.7 2.7 6.0 3.3 3.9 2.7 – – – fo fo fo fo fo fo fo fo fo fo fo fo CMOS CMOS CMOS CMOS CMOS TTL TTL TTL TTL CMOS CMOS TTL High impedance High impedance High impedance High impedance High impedance High impedance High impedance High impedance High impedance High impedance High impedance High impedance Version1 gm ratio Rf (kΩ) Output frequency Output level Standby output state 1. Chip form devices have designation CF5021××. ORDERING INFORMATION D evicez SM5021××H CF5021××–2 Package 6-pin SOT Chip form NIPPON PRECISION CIRCUITS—1 SM5021 series PACKAGE DIMENSIONS (UNIT : mm) • 6-pin SOT 2.9 ± 0.2 1.6 − 0.1 2.8 − 0.3 + 0.2 + 0.2 0.45 ± 0.15 0.15 − 0.05 1.1 ± 0.1 1.9 ± 0.2 0.95 + 0.1 0.1 0.4 ± 0.1 0.12 M 0 to 0.15 NIPPON PRECISION CIRCUITS—2 SM5021 series PAD LAYOUT (Unit : µm) PINOUT (Top View) Q XT HA5021 (1000,800) VDD INH XT VSS 1 6 XT VDD Q 1 2 3 5 4 (0,0) VSS XT INH Chip size: 1.00 × 0.80 mm Chip thickness: 220 ± 30 µm Chip base: V D D level PIN DESCRIPTION and PAD DIMENSIONS N umber 1 2 3 4 5 6 Name INH XT VSS Q VDD XT I/O I I – O – O Description Output state control input. High impedance when LOW. Pull-up resistor built in Amplifier input. Ground Output. Output frequency (fO ) Supply voltage Amplifier output. Crystal oscillator connection pins. Crystal oscillator connected between XT and XT Crystal oscillator connection pins. Crystal oscillator connected between XT and XT Pad dimensions [µm] X 771 553 150 150 796 836 Y 150 150 140 649 409 636 BLOCK DIAGRAM VDD VSS XT CG CD Rf XT Q INH NIPPON PRECISION CIRCUITS—3 SM5021 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0 V Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current Power dissipation Symbol VDD V IN VO UT Topr Chip form Tstg IO UT PD 6-pin SOT 6-pin SOT Condition Rating −0.5 to 7.0 −0.5 to V D D + 0.5 −0.5 to V D D + 0.5 −40 to 85 −65 to 150 −55 to 125 13 250 Unit V V V °C °C mA mW Recommended Operating Conditions VSS = 0 V, f ≤ 70MHz, CL ≤ 15pF Rating Parameter Supply voltage Input voltage Operating temperature Symbol VDD V IN TO PR Condition min 2.7 VSS −2 0 typ – – – max 5.5 VDD 80 V V °C Unit Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or power dissipation. NIPPON PRECISION CIRCUITS—4 SM5021 series Electrical Characteristics 3 V operation: AA, AB, AC, AD, AE series/ KD, KE series VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Parameter Symbol Condition SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E – – 2.0 – SM5021A×H, CF5021A× S M5021K×H, CF5021K× – 25 SM5021×AH, CF5021×A Feedback resistance (A× series only) SM5021×BH, CF5021×B Rf Measurement cct 5 SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E CG Built-in capacitance Design value, determined by the internal wafer pattern SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E 5.1 2.8 3.3 2.3 7.44 – – – – 13 100 6.0 3.3 3.9 2.7 8 10 10 – 0.5 25 250 6.9 3.8 4.5 3.1 8.56 pF kΩ µA V V mA kΩ Rating min typ max Unit HIGH-level output voltage VO H Q: Measurement cct 1, V D D = 2.7 V, IO H = 4 m A Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 4 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A 2.1 2.4 – V LOW-level output voltage VO L – 0.3 0.4 V Output leakage current HIGH-level input voltage LOW-level input voltage Current consumption INH pull-up resistance IZ V IH V IL ID D RU P Q: Measurement cct 2, V D D = 3.3 V, INH = L OW, VO H = V D D Q: Measurement cct 2, V D D = 3.3 V, INH = L OW, VO L = V S S INH INH INH = open, Measurement cct 3, load cct 1, CL = 15 pF, 70 MHz crystal oscillator Measurement cct 4 CD Design value, determined by the internal wafer pattern 13.95 15 16.05 pF 11.16 12 12.84 NIPPON PRECISION CIRCUITS—5 SM5021 series 5 V operation: AA, AB, AC, AD series/ BA, BB, BC, BD series/ KD series/ LD series VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VO H VO L IZ V IH V IL Condition Q: Measurement cct 1, V D D = 4.5 V, IO H = 8 m A Q: Measurement cct 2, V D D = 4.5 V, IO L = 8 m A Q: Measurement cct 2, V D D = 5.5 V, INH = L OW, VO H = V D D Q: Measurement cct 2, V D D = 5.5 V, INH = L OW, VO L = V S S INH INH INH = open, Measurement cct 3, load cct 1, CL = 15 pF, 70 MHz crystal oscillator INH = open, Measurement cct 3, load cct 2, CL = 15 pF, 70 MHz crystal oscillator INH pull-up resistance RU P Measurement cct 4 SM5021×AH, CF5021×A Feedback resistance (A×, B× series only) Rf Measurement cct 5 SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D CG Built-in capacitance CD Design value, determined by the internal wafer pattern SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021B×H, CF5021B× SM5021L×H, CF5021L× Rating min 3.9 – – – 2.0 – typ 4.2 0.3 – – – – max – 0.4 10 10 – 0.8 Unit V V µA V V – 18 35 mA Current consumption ID D – 25 5.1 2.8 3.3 2.3 7.44 13.95 18 100 6.0 3.3 3.9 2.7 8 15 35 250 6.9 3.8 4.5 3.1 8.56 16.05 pF pF kΩ kΩ NIPPON PRECISION CIRCUITS—6 SM5021 series Switching Characteristics CMOS 3 V operation: AA, AB, AC, AD, AE series/ KD, KE series VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating Parameter Symbol Condition min SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AEH, CF5021AE SM5021KEH, CF5021KE SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AEH, CF5021AE SM5021KEH, CF5021KE SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD typ max Unit – 5 10 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD , CL = 15 pF Output rise time tr1 – 3.5 7 ns Measurement cct 6, load cct 1, 0.2VDD to 0.8VDD , CL = 15 pF – 3.5 7 – 5 10 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD , CL = 15 pF Output fall time tf1 – 3.5 7 ns Measurement cct 6, load cct 1, 0.8VDD to 0.2VDD , CL = 15 pF – 3.5 7 Output duty cycle1 Output disable delay time Output enable delay time Duty tPLZ tPZL Measurement cct 6, load cct 1, Ta = 25 °C, V DD = 3 V, CL = 15 pF, f ≤ 7 0MHz Measurement cct 6, load cct 1, Ta = 25 °C, V DD = 3 V, CL = 15 pF 45 – – – – – 55 100 100 % ns ns 1. Determined by the lot monitor. 5 V operation: AA, AB, AC, AD series/ KD series VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD , CL = 15 pF Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD , CL = 15 pF Measurement cct 6, load cct 1, Ta = 25 °C, V DD = 5 V, CL = 15 pF, f ≤ 70 MHz Measurement cct 6, load cct 1, Ta = 25 °C, V DD = 5 V, CL = 15 pF – – 45 – – typ 3.5 3.5 – – – max 7 7 55 100 100 ns ns % ns ns Unit 1. Determined by the lot monitor. NIPPON PRECISION CIRCUITS—7 SM5021 series TTL 5 V operation: BA, BB, BC, BD series/ LD series VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating Parameter Output rise time Output fall time Output duty cycle1 Output disable delay time Output enable delay time Symbol tr2 tf2 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 2, 0.4V to 2.4V, CL = 15 pF Measurement cct 6, load cct 2, 2.4V to 0.4V, CL = 15 pF Measurement cct 6, load cct 2, Ta = 25 °C, V DD = 5 V, CL = 15 pF, f ≤ 70 MHz Measurement cct 6, load cct 2, Ta = 25 °C, V DD = 5 V, CL = 15 pF – – 45 – – typ 2.5 2.5 – – – max 7 7 55 100 100 ns ns % ns ns Unit 1. Determined by the lot monitor. Current consumption and Output waveform with NPC’s standard crystal f (MHz) R (Ω) 18.62 20.53 22.17 22.20 25.42 L (mH) 16.24 11.34 7.40 5.05 4.18 Ca (fF) 1.733 1.396 1.370 1.388 1.254 Cb (pF) 5.337 3.989 4.105 4.226 5.170 Cb 30 40 50 60 L Ca R 70 FUNCTIONAL DESCRIPTION Standby Function When INH goes LOW, the oscillator output on Q goes high impedance. INH HIGH (or open) LOW Q fO output frequency High impedance Oscillator Normal operation Normal operation NIPPON PRECISION CIRCUITS—8 SM5021 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 5.0V VDD Signal Generator R1 C1 XT R3 XT VSS Q R2 VDD RUP = VSS INH VDD IPR A Q out monitor VOH 0V IPR 2.0VP −P , 10MHz sine wave input signal (3V operation) 3.5VP −P , 10MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R2 : 525Ω (3V operation/ ×A, ×B, ×C, ×D series) 263Ω (3V operation/ ×E series) 490Ω (5V operation) R3 : 100kΩ (K×, L× series) Measurement cct 2 Measurement cct 5 IOL, IZ VDD Q INH VSS IZ XT VDD Rf = VDD IRf A V VOL IRf XT VSS A Measurement cct 3 Measurement cct 6 IDD IST IDD VDD C1 XT R1 R3 XT VSS Q A XT Rfo X'tal XT INH VDD Signal Generator Q VSS 2.0VP −P , 70MHz sine wave input signal (3V operation) 3.5VP −P , 70MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R3 : 100kΩ (K×, L× series) R fo : 2.7kΩ (K×, L× series) NIPPON PRECISION CIRCUITS—9 SM5021 series Load cct 1 Load cct 2 Q output CL (Including probe capacity) R Q output (Including proove capacity) CL C L = 15pF: tr1, tf1 C L = 15pF: tr2 , tf2 R = 800Ω Switching Time Measurement Waveform Output duty level (CMOS) Q output 0.9VDD 0.1VDD TW 0.9VDD 0.1VDD DUTY measuring voltage (0.5V DD) tr Output duty level (TTL) tf Q output 2.4V 0.4V TW 2.4V 0.4V DUTY measuring voltage (1.4V ) tr Output duty cycle (CMOS) tf Q output TW T DUTY measuring voltage (0.5V DD) DUTY= TW/ T 100 (%) Output duty cycle (TTL) Q output TW T DUTY measuring voltage (1.4V ) DUTY= TW/ T 100 (%) NIPPON PRECISION CIRCUITS—10 SM5021 series Output Enable/Disable Delay INH VIL VIH tPLZ Q output INH inputwaveform tr = tf tPZL 10ns NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: 03-3642-6661 Facsimile: 03-3642-6698 NC9903AE 1999.11 NIPPON PRECISION CIRCUITS INC. NIPPON PRECISION CIRCUITS—11
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