CF5073 series VCXO Module ICs with Built-in Varicap
OVERVIEW
The CF5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resistance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscillation startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO module with just the connection of an external crystal.
FEATURES
I I
I I I
3.0 to 3.6V supply voltage range 10MHz to 60MHz operating frequency (varies with version) Uses negative-resistance switching function Varicap diode built-in Frequency divider built-in (varies with version: fO, fO/2, fO/4, fO/8, fO/16, fO/32)
I I I I I
I
CMOS output level 50 ± 10% output duty 6mA (min) output drive capability 15pF output load capacitance CL Standby function (high impedance in standby mode) Chip form (CF5073××)
SERIES LINEUP
Version CF5073A× CF5073B× CF5073C× CF5073D× CF5073E× CF5073F× Typical oscillation frequency1 [MHz] 16 23 30 37 44 51 fO fO/2 fO/4 fO/8 fO/16 fO/32 Output frequency CF5073×1 CF5073×22 CF5073×32 CF5073×42 CF5073×52 CF5073×62
1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary with crystal characteristics, so careful evaluation should be exercised when selecting the device version. 2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail.
APPLICATIONS
I I I I
VCXO modules Communications application Networking application Broadcasting application
ORDERING INFORMATION
Device CF5073××−1 Package Chip form
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CF5073 series
PAD LAYOUT
(Unit: µm)
XTN 7 VC 1
XT 6
(1240,1400)
5 HA5073 INHN 2 3 (0,0) VSS
Chip size: 1.24 × 1.4mm Chip thickness: 300 ± 30µm Chip base: VDD potential
VDD
4
Q
PAD DESCRIPTION AND DIMENSIONS
Pad dimensions [µm] Pad No. Name I/O Description Oscillation frequency control voltage input pin Output state control voltage input pin (−) supply pin Output pin (+) supply pin Amplifier input pin Amplifier output pin Crystal connection pins. Crystal is connected between XT and XTN. Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32 Function X 1 2 3 4 5 6 7 VC INHN VSS Q VDD XT XTN I I – O – I O Positive polarity (frequency increases with increasing voltage) High-impedance output when LOW, pull-up resistor built-in 134 137 458 1086 1106 829 416 Y 915 295 137 155 772 1263 1260
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CF5073 series
BLOCK DIAGRAM
Rf CG 1/2 1/2 1/2 1/2 1/2
XT
RD CV CC CD
Q
XTN
RB1
VDD
RB2
VC
RUP
VSS
INHN
Note. ESD of XT pin is inferior to other pins. ESD of all pins excluding XT pin is equivalent to that of our other oscillator products. VC pin has no protection circuit at VDD side. (See figure below.)
VC
Internal circuit
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CF5073 series
ABSOLUTE MAXIMUM RATINGS
VSS = 0V unless otherwise noted.
Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current 1. It should not exceed + 7.0V. Symbol VDD All input pins excluding VC pin VIN VOUT Topr TSTG IOUT VC pin Conditions Rating −0.5 to 7.0 −0.5 to VDD + 0.5 −0.5 to VDD + 2.51 Unit V V V V °C °C mA
−0.5 to VDD + 0.5 −40 to +85 −65 to +150 20
RECOMMENDED OPERATING CONDITIONS
VSS = 0V, f = 10MHz to 60MHz, CL ≤ 15pF unless otherwise noted.
Rating Parameter Operating supply voltage Input voltage Operating temperature Symbol VDD VIN TOPR Conditions Min 3.0 VSS –40 Typ – – – Max 3.6 VDD +85 V V °C Unit
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CF5073 series
ELECTRICAL CHARACTERISTICS
CF5073A×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073A1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 16MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073A2 CF5073A3 CF5073A4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.67 100 50 11.0 2.4 25.5 Design value, determined by internal wafer pattern 34 8.5 Typ 2.75 0.2 – – – – 8 7.5 7 7 100 300 0.96 200 100 14.4 4.0 30 40 10 Max – 0.4 10 10 – 0.3VDD 20 19.5 19.5 19 180 540 1.25 360 180 17.8 5.6 34.5 46 11.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
CF5073B×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073B1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 23MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073B2 CF5073B3 CF5073B4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.50 100 50 11.0 2.3 25.5 Design value, determined by internal wafer pattern 34 12.7 Typ 2.75 0.2 – – – – 9 8 7.5 7.5 100 300 0.72 200 100 14.6 4.0 30 40 15 Max – 0.4 10 10 – 0.3VDD 22 21 20.5 20.5 180 540 0.94 360 180 18.2 5.7 34.5 46 17.3 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
CF5073C×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073C1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 30MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073C2 CF5073C3 CF5073C4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.50 100 50 11.0 2.3 25.5 Design value, determined by internal wafer pattern 25.5 29.7 Typ 2.75 0.2 – – – – 10 9 8.5 8 100 300 0.72 200 100 14.6 4.0 30 30 35 Max – 0.4 10 10 – 0.3VDD 24 23 22.5 22 180 540 0.94 360 180 18.2 5.7 34.5 34.5 40.3 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
CF5073D×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073D1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 37MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073D2 CF5073D3 CF5073D4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 11.0 2.3 25.5 Design value, determined by internal wafer pattern 25.5 34 Typ 2.75 0.2 – – – – 11 9.5 9 8.5 100 300 0.36 200 100 14.6 4.0 30 30 40 Max – 0.4 10 10 – 0.3VDD 26 24.5 24 23.5 180 540 0.47 360 180 18.2 5.7 34.5 34.5 46 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
CF5073E×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073E1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 44MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073E2 CF5073E3 CF5073E4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 11.0 2.3 21.2 Design value, determined by internal wafer pattern 21.2 42.5 Typ 2.75 0.2 – – – – 12 10.5 9.5 9 100 300 0.36 200 100 14.6 4.0 25 25 50 Max – 0.4 10 10 – 0.3VDD 28 26.5 25.5 25 180 540 0.47 360 180 18.2 5.7 28.8 28.8 57.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
CF5073F×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN CF5073F1 Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 51MHz Measurement circuit 3 Design value, determined by internal wafer pattern Measurement circuit 4 Design value, determined by internal wafer pattern Design value, determined by internal wafer pattern VC = 0.3V VC = 3.0V CF5073F2 CF5073F3 CF5073F4 to 6 INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 9.5 2.0 17 Design value, determined by internal wafer pattern 17 42.5 Typ 2.75 0.2 – – – – 13 11 10 9.5 100 300 0.36 200 100 12.5 3.5 20 20 50 Max – 0.4 10 10 – 0.3VDD 30 28 27 26.5 180 540 0.47 360 180 15.5 5.0 23 23 57.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit
CV Built-in capacitance CG CD CC
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CF5073 series
SWITCHING CHARACTERISTICS
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted
Rating1 Parameter Symbol Conditions Min Output rise time Output fall time Output duty cycle Output disable delay time Output enable delay time tr1 tf1 Duty tPLZ tPZL Measurement circuit 2, load circuit 1, 0.1VDD → 0.9VDD, CL = 15pF Measurement circuit 2, load circuit 1, 0.9VDD → 0.1VDD, CL = 15pF Measurement circuit 2, load circuit 1, VDD = 3.3V, Ta = 25°C, CL = 15pF Measurement circuit 5, load circuit 1, VDD = 3.3V, Ta = 25°C, CL ≤ 15pF – – 40 – – Typ 2.5 2.5 50 – – Max 6 6 60 100 100 ns ns % ns ns Unit
1. The switching characteristics apply for normal output waveforms. Note that, depending on the matching of the CF5073 series version and crystal, normal waveform output may not be continuous.
Current consumption and Output waveform with NPC’s standard crystal
C0
f [MHz] 30
R1 [Ω] 7.06
L1 [mH] 2.25
C1 [fF] 12.5
C0 [pF] 3.11
L1
C1
R1
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the Q output pin becomes high impedance.
INHN HIGH (or open) LOW Q Any fO, fO/2, fO/4, fO/8, fO/16, or fO/32 High impedance Oscillator Operating Operating
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CF5073 series
MEASUREMENT CIRCUITS
Measurement Circuit 1 Measurement Circuit 4
R3 VDD
When measuring VOL
Signal Generator
C1 XT R1 VC VSS Q R2
IRB1 A VC RB1 = VDD IRB1 XTN
VDD
When measuring VOH
Q output
VDD VOH 0V VDD VOL 0V
VSS
Q output
XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, R2 = 417Ω, R3 = 434Ω, VC = 1.65V
Measurement Circuit 2
Measurement Circuit 5
A
VDD XT X'tal XTN VC VSS Q INHN
Signal Generator
C1 XT R1 VC
VDD
INHN Q
VSS
VC = 1.65V, INHN = open, crystal oscillation
XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, VC = 1.65V
Measurement Circuit 3
Measurement Circuit 6
RUP = VDD
VDD IRUP
VDD INHN
INHN VC VSS
A IRUP
VC VSS
Q
A
VC = 1.65V
VC = 1.65V
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CF5073 series
Load Circuit 1
Q output CL
(Including probe capacitance)
Switching Time Measurement Waveform
Output duty level, tr, tf 0.9V DD 0.1V DD TW 0.9V DD 0.1V DD DUTY measurement voltage (0.5V DD )
Q output
tr1
Output duty cycle
tf1
Q output
TW T
DUTY measurement voltage (0.5V DD)
DUTY= TW/ T
100 (%)
Output Enable/Disable Delay Times
INHN
VIH VIL
tPLZ Q output
INHN input waveform tr = tf
tPZL
10ns
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CF5073 series
Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from NIPPON PRECISION CIRCUITS INC. (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome, Koto-ku, Tokyo 135-8430, Japan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co.jp/ Email: sales@npc.co.jp
NC0105BE 2003.06
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