SM5010BH3S

SM5010 series NIPPON PRECISION CIRCUITS INC. Crystal Oscillator Module ICs OVERVIEW The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits. High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator. FEATURES I I I I I I Inverter amplifier feedback resistor built-in Capacitors CG, CD built-in Standby function Power-save pull-up resistor built-in (5010CL×) 16 mA (VDD = 4.5 V) drive capability (5010AN×, AK×, BN×, BK×, CL×, DN×) 4 mA (VDD = 4.5 V) drive capability (5010AH×, BH×) SERIES CONFIGURATION 3V operating V ersion 1 O utput Output R e c o m m e n d e d O utput R e c o m m e n d e d O utput frequency load load operating operating current frequency frequency (max) (max) [mA] rang e [MHz] rang e [MHz] [pF] [pF] fO fO / 2 fO / 4 fO fO fO / 8 15 15 15 30 30 30 50 30 16 SM5010AN1S SM5010AN2S SM5010AN3S SM5010AN4S SM5010AK1S SM5010AH1S SM5010AH2S SM5010AH3S SM5010AH4S SM5010BN1S SM5010BN2S SM5010BN3S SM5010BN4S SM5010BK1S ina ry I I I I I Output three-state function 2.7 to 5.5 V supply voltage Oscillator frequency output (fO, fO/2, fO/4, fO/8 determined by internal connection) 8-pin SOP (SM5010×××S) Chip form (CF5010×××) 5V operating Built-in capacitance CG [ pF] CD [ pF] RD [ Ω] Input level (5V) Output duty level S t a n d by function – TTL CMOS No No No No No No No No No No No No No No No No No No 50 30 16 – TTL CMOS/TTL lim 50 30 15 – 30 – 50 30 15 30 15 16 15 30 15 16 15 30 15 16 15 30 15 16 15 30 15 30 50 30 15 30 50 30 15 30 50 30 15 – 30 – 50 30 15 15 15 15 30 30 30 30 30 30 30 30 30 30 15 16 15 16 15 16 15 16 15 15 30 50 50 15 30 15 30 50 50 15 30 15 30 50 16 16 16 4 4 4 4 16 16 16 16 16 4 4 4 4 16 16 16 16 16 – – – – – – – 820 820 820 820 820 820 820 820 820 – – – – 820 TTL TTL TTL TTL TTL TTL TTL TTL TTL CMOS/TTL CMOS/TTL TTL CMOS CMOS CMOS CMOS CMOS CMOS/TTL CMOS/TTL CMOS/TTL TTL CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS fO / 2 fO / 8 fO fO / 4 fO / 2 fO / 4 fO fO / 8 fO T BD TTL TTL TTL TTL TTL TTL TTL CMOS CMOS CMOS CMOS TTL pre SM5010BH1S SM5010BH2S fO / 2 SM5010BH3S fO / 4 fO / 8 fO SM5010BH4S SM5010CL1S SM5010CL2S fO / 2 fO / 4 fO fO / 8 SM5010CL3S SM5010CL4S SM5010DN1S 1 . Chip form devices have designation CF5010 ×××. Yes Yes Yes Yes No N ote: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal. NIPPON PRECISION CIRCUITS—1 S M5010 series ORDERING INFORMATION D e vice S M 5 0 1 0 ×××S C F 5 0 1 0 ×××– 1 P ackag e 8-pin SOP Chip form (Unit:mm) • 8-pin SOP 0.695typ 5.2 0.3 lim 1.5 1.27 0.05 0.05 0.1 0.10 0.4 0.1 0.12 M pre NIPPON PRECISION CIRCUITS—2 ina ry 0.15 + 0.1 − 0.05 PACKAGE DIMENSIONS 4.4 0.2 6.2 0.3 0.4 0.2 0 to 10 S M5010 series PAD LAYOUT (Unit:µm) PINOUT (Top view) VDD Q (920,1180) Y (0,0) INH XT XT VSS X C hip size: 0.92 × 1 .18 mm Chip thickness: 300 ± 30 µm Chip base: V D D l evel PIN DESCRIPTION and PAD DIMENSIONS Number 1 2 3 4 5 6 7 8 Name INH XT XT VSS Q NC NC VDD I/O I lim I Amplifier input. O – Amplifier output. Ground O – – No connection No connection – Supply voltage Output state control input. High impedance when LOW . In the case of the 5 0 1 0 C L ×, t he oscillator stops and Pow er-saving pull-up resistor built in. Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and X T Output. Output frequency (f O , fO /2, fO /4, fO / 8) determined by internal connection BLOCK DIAGRAM pre XT CG Rf VDD VSS XT INH ina ry INH XT 1 2 8 7 6 5 VDD NC NC Q XT 3 VSS 4 Description X 195 385 575 765 757.6 – – 165.4 HA5010 P ad dimensions [µm] Y 174.4 174.4 174.4 174.4 1017.6 – – 1014.6 CD RD 1/2 1/2 1/2 Q NIPPON PRECISION CIRCUITS—3 S M5010 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0 V P arameter S upply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Symbol VDD V IN VOUT T o pr T s tg IO U T PD T s ld ts ld Condition Rating −0 .5 to 7.0 −0 .5 to V D D + 0 .5 −4 0 to 85 −0 .5 to V D D + 0 .5 −6 5 to 150 10 Unit V V V C hip form 8-pin SOP 5 010 ×H × Output current Pow er dissipation Soldering temperature Soldering time 5010 ×N ×, ×K ×, C L × 8 -pin SOP 8 -pin SOP 8 -pin SOP Recommended Operating Conditions 3V operation VSS = 0 V P arameter Symbol Series ×N × ×H × CL× ×N × ×H × CL× lim VDD 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 1 6 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 1 6 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 1 6 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F V IN ×N × ×H × CL× TO P R Symbol Series ×N × ×K × CL× ×H × ×N × ×K × CL× ×N × ×K × ×H × CL× ×H × Condition VDD 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 1 5 p F 2 ≤ f ≤ 3 0 MHz, C L ≤ 5 0 p F V IN TO P R S upply voltage Input voltage Operating temperature 5V operation VSS = 0 V pre P arameter Supply voltage Input voltage Operating temperature ina ry −5 5 to 125 25 500 255 10 Condition Rating typ – – – – – – – – – min 2.7 2.7 2.7 VSS VSS VSS − 10 − 10 − 20 max 3.6 3.6 3.6 VDD VDD VDD + 70 + 70 + 80 Rating min 4.5 4.5 4.5 4.5 VSS VSS VSS VSS − 40 − 40 − 40 − 40 typ – – – – – – – – – – – – max 5.5 5.5 5.5 5.5 VDD VDD VDD VDD + 85 + 85 + 85 + 85 °C °C mA mW °C s Unit V V °C Unit V V °C NIPPON PRECISION CIRCUITS—4 SM5010 series Electrical Characteristics 5010×N× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition Q: Measurement cct 1, V D D = 2 .7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2 .7 V, IO L = 8 m A Rating min 2.1 – typ 2.4 max – Unit V V µA V V Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O L = V S S INH INH Current consumption ID D Measurement cct 3, load cct 1, I N H = o pen, C L = 1 5 p F, f = 30 M H z ina ry 0.3 – – 0.4 10 10 – – – 2.0 – – – 0.5 5010 ×N 1 5010 ×N 2 5010 ×N 3 5010 ×N 4 TBD 100 200 mA I N H p ull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance RUP1 Rf RD CG CD Measurement cct 4 Measurement cct 5 Design value – – – – kΩ kΩ Ω pF pF 5 0 1 0 B ×× – 820 – Design value, determined by the internal w afer pattern 5 0 1 0 A ××, 5010B ×× TBD 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol VOH VOL IZ Condition Rating min 3.9 – – – 2.0 – 5010 ×N 1 5010 ×N 2 5010 ×N 3 5010 ×N 4 5010 ×K × – – 5 0 1 0 B ×× 5 0 1 0 A ××, 5010B ×× – 100 200 820 – – – kΩ kΩ Ω pF pF typ 4.2 0.3 – – – – max – 0.4 10 10 – 0.8 Unit V V µA V V HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage pre Current consumption ID D I N H p ull-up resistance Feedback resistance RUP1 Rf Oscillator amplifier output resistance Built-in capacitance RD Design value CG CD lim V IH V IL INH Measurement cct 3, load cct 2, I N H = o pen, C L = 5 0 p F, f = 30 M H z Measurement cct 3, load cct 1, I N H = o pen, C L = 1 5 p F, f = 30 M H z Measurement cct 4 Measurement cct 5 Design value, determined by the internal w afer pattern 5010×N×, ×K× series Q: Measurement cct 1, V D D = 4 .5 V, IO H = 1 6 m A Q: Measurement cct 2, V D D = 4 .5 V, IO L = 1 6 m A Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O L = V S S INH TBD mA TBD NIPPON PRECISION CIRCUITS—5 SM5010 series 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition min Q: Measurement cct 1, V D D = 2 .7 V, IO H = 2 m A Q: Measurement cct 2, V D D = 2 .7 V, IO L = 2 m A 2.1 – typ 2.4 0.3 – – max – 0.5 10 10 – V V µA V V Unit Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O L = V S S INH INH Current consumption ID D Measurement cct 3, load cct 2, I N H = o pen, C L = 1 5 p F, f = 16 M H z ina ry – – 2.0 – – – 0.5 5010 ×H 1 5010 ×H 2 5010 ×H 3 5010 ×H 4 TBD 100 200 mA I N H p ull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance RUP1 Rf RD CG CD Measurement cct 4 Measurement cct 5 Design value – – – – kΩ kΩ Ω pF pF 5 0 1 0 B ×× – 820 – Design value, determined by the internal w afer pattern 5 0 1 0 A ××, 5010B ×× TBD 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating Unit min 3.9 – – – 2.0 – 5010 ×H 1 5010 ×H 2 5010 ×H 3 5010 ×H 4 – – 5 0 1 0 B ×× 5 0 1 0 A ××, 5010B ×× – 100 200 820 – – – kΩ kΩ Ω pF pF typ 4.2 0.3 – – – – max – 0.5 10 µA 10 – 0.8 V V V V P arameter Symbol VOH VOL IZ Condition HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage pre V IL INH Current consumption ID D I N H p ull-up resistance Feedback resistance RUP1 Rf Oscillator amplifier output resistance Built-in capacitance RD Design value CG CD lim V IH INH Measurement cct 3, load cct 2, I N H = o pen, C L = 1 5 p F, f = 30 M H z Measurement cct 4 Measurement cct 5 Design value, determined by the internal w afer pattern Q: Measurement cct 1, V D D = 4 .5 V, IO H = 4 m A Q: Measurement cct 2, V D D = 4 .5 V, IO L = 4 m A Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O L = V S S TBD mA TBD NIPPON PRECISION CIRCUITS—6 SM5010 series 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition min Q: Measurement cct 1, V D D = 2 .7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2 .7 V, IO L = 8 m A 2.2 – typ 2.4 0.3 – – max – 0.4 10 10 V V µA V V Unit Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3 .6 V, V O L = V S S INH INH Current consumption ID D Measurement cct 3, load cct 2, I N H = o pen, C L = 1 5 p F, f = 30 M H z ina ry – – 0.7V D D 0.3V D D 5010CL1 5010CL2 5010CL3 5010CL4 TBD 100 mA I N H p ull-up resistance Feedback resistance Built-in capacitance RUP1 RUP2 Rf CG CD – – Measurement cct 4 Measurement cct 5 kΩ MΩ kΩ pF pF TBD 200 – – Design value, determined by the internal wafer pattern TBD 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating Unit min 4.0 – – – 0.7V D D 0.3V D D 5010CL1 5010CL2 5010CL3 5010CL4 – 100 TBD – 200 – – kΩ MΩ kΩ pF pF typ 4.2 0.3 – – max – 0.4 10 µA 10 V V V V P arameter Symbol VOH VOL IZ Condition HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage pre Current consumption ID D I N H p ull-up resistance RUP1 RUP2 Rf Feedback resistance Built-in capacitance CG CD lim V IH V IL INH INH Measurement cct 3, load cct 2, I N H = o pen, C L = 5 0 p F, f = 30 M H z Measurement cct 4 Measurement cct 5 Q: Measurement cct 1, V D D = 4 .5 V, IO H = 1 6 m A Q: Measurement cct 2, V D D = 4 .5 V, IO L = 1 6 m A Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 5 .5 V, V O L = V S S TBD mA Design value, determined by the internal wafer pattern TBD NIPPON PRECISION CIRCUITS—7 SM5010 series Switching Characteristics 5010×N× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tP L Z tP Z L Condition min – – typ 3.0 3.0 – max 6.0 6.0 60 Measurement cct 6, load cct 2, C L = 1 5 p F, 0.1V D D t o 0.9V D D Measurement cct 6, load cct 2, C L = 1 5 p F, 0.9V D D t o 0.1V D D Measurement cct 6, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 1 5 p F, f = 30MHz Unit ns ns % ns ns Measurement cct 7, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 15 p F 1. Determined by the lot monitor. 5010×N×, ×K× series 5 V operation (5010×N×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating typ 2.0 4.0 2.0 4.0 – – – P arameter Symbol tr2 tr3 Output fall time Output duty cycle 1 tf2 tf3 Condition Output rise time Measurement cct 6, load cct 2, 0.1V D D t o 0.9V D D Measurement cct 6, load cct 2, 0.9V D D t o 0.1V D D ina ry 40 – – 100 – – 100 min – – – – 45 – – max 4.0 8.0 4.0 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 8.0 55 100 100 Rating Condition min – – 45 – – typ 1.5 1.5 – – – max 3.0 3.0 55 100 100 Unit ns lim Duty tP L Z tP Z L Symbol tr4 tf4 Duty tP L Z tP Z L ns Measurement cct 6, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 5 0 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 15 p F % ns ns Output disable delay time Output enable delay time 1. Determined by the lot monitor. 5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, ×K×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. pre P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time 1. Determined by the lot monitor. Unit ns ns % ns ns Measurement cct 6, load cct 1, C L = 1 5 p F, 0.4V to 2.4V Measurement cct 6, load cct 1, C L = 1 5 p F, 2.4V to 0.4V Measurement cct 6, load cct 1, V D D = 5 .0 V, Ta = 25 °C , C L = 1 5 p F, f = 30MHz Measurement cct 7, load cct 1, V D D = 5 .0 V, Ta = 25 °C , C L = 15 p F NIPPON PRECISION CIRCUITS—8 SM5010 series 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tP L Z tP Z L Condition min Measurement cct 6, load cct 2, C L = 1 5 p F, 0.1V D D t o 0.9V D D Measurement cct 6, load cct 2, C L = 1 5 p F, 0.9V D D t o 0.1V D D Measurement cct 6, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 1 5 p F, f = 16MHz – – typ 15 15 – max 30 30 ns ns % ns ns Unit Measurement cct 7, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 15 p F 1. Determined by the lot monitor. 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol tr2 tr3 Output fall time Output duty cycle 1 tf2 tf3 Duty tP L Z Condition Output rise time Measurement cct 6, load cct 2, 0.1V D D t o 0.9V D D Measurement cct 6, load cct 2, 0.9V D D t o 0.1V D D ina ry 40 – 60 – 100 – – 100 Rating typ 5 min – – – – max 10 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 13 5 26 10 13 – – – 26 45 – – 55 100 100 Unit ns ns lim tP Z L Measurement cct 6, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 1 5 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 15 p F % ns ns Output disable delay time Output enable delay time 1. Determined by the lot monitor. pre NIPPON PRECISION CIRCUITS—9 SM5010 series 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating P arameter Symbol tr2 tr4 Output fall time Output duty cycle 1 Output disable delay time 2 Output enable delay time 2 tf2 tf4 Duty tP L Z tP Z L Condition min Output rise time Measurement cct 6, load cct 2, 0.1V D D t o 0.9V D D Measurement cct 6, load cct 2, 0.9V D D t o 0.1V D D C L = 15 p F C L = 30 p F C L = 15 p F C L = 30 p F – – – – typ 2.0 3.0 2.0 3.0 – max 4.0 ns 6.0 4.0 6.0 55 Unit ina ry 45 – – 100 – – 100 Rating typ 1.5 4.0 1.5 4.0 – – – Condition min – – – – 40 – – max 3.0 8.0 3.0 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 8.0 60 100 100 f (MHz) 30 R (Ω) 17.2 L (mH) 4.36 Ca (fF) 6.46 Cb (pF) 2.26 ns Measurement cct 6, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 1 5 p F, f = 30MHz % ns ns Measurement cct 7, load cct 2, V D D = 3 .0 V, Ta = 25 °C , C L = 15 p F 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H g oes LOW , normal output stops. W h e n I N H g oes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol tr2 tr3 tf2 tf3 Unit Output rise time Output fall time Output duty cycle 1 lim Measurement cct 6, load cct 2, 0.9V D D t o 0.1V D D Duty tP L Z tP Z L Cb L Ca R Measurement cct 6, load cct 2, 0.1V D D t o 0.9V D D ns ns Measurement cct 6, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 5 0 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5 .0 V, Ta = 25 °C , C L = 15 p F % ns ns Output disable delay time 2 Output enable delay time 2 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H g oes LOW , normal output stops. W h e n I N H g oes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. pre Current consumption and Output waveform with NPC’s standard crystal NIPPON PRECISION CIRCUITS—10 SM5010 series FUNCTIONAL DESCRIPTION Standby Function AH, AK, AN, BH, BK, BN, DN series When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. Version AH, AK, AN, BH, BK, BN, DN series CL series LOW INH HIGH (or open) LOW HIGH (or open) Q Oscillator A n y f O , fO /2, fO /4 or f O /8 output frequency High impedance A n y f O , fO /2, fO /4 or f O /8 output frequency High impedance Power-save Pull-up Resistance (CL series only) The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. pre NIPPON PRECISION CIRCUITS—11 lim ina ry Nor mal operation Nor mal operation Nor mal operation Stopped CL series SM5010 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 3.0V or 5.0V VDD VDD R1 VSS Q output 2.0V P −P , 1 0MHz sine wave input signal (3V operation) 3.5V P −P , 1 0MHz sine wave input signal (5V operation) C1 : 0.001 µF R1 : 50 Ω R2 : 263 Ω ( 5010 ×N ×, ×K ×/ 3V operation) 245 Ω ( 5010 ×N ×, ×K ×/ 5V operation) 1050 Ω ( 5010 ×H ×/ 3V operation) 975 Ω ( 5010 ×H ×/ 5V operation) 275 Ω ( 5010CL ×/ 3V operation) 250 Ω ( 5010CL ×/ 5V operation) Measurement cct 2 IZ, IOL VDD IZ lim Q A INH VSS V VOH VOL Measurement cct 3 pre A VDD IDD Signal Generator C1 XT Q R1 VSS 2.0V P −P , 3 0MHz sine wave input signal (3V operation) 3.5V P −P , 3 0MHz sine wave input signal (5V operation) C1 : 0.001 µF R1 : 50 Ω ina ry R2 Signal Generator C1 XT Q RUP1 = VDD IPR (VIL = 0V) VSS INH V RUP2 = VDD VIH (V IH = 0.7V DD) IPR VOH 0V VIH VIL A IPR Measurement cct 5 VDD XT XT Rf = VDD IRf VSS A IRf Measurement cct 6 IDD IST A XT X'tal XT INH VDD Q VSS Measurement cct 7 VDD Signal Generator R1 XT VSS Q INH R1 : 50 Ω NIPPON PRECISION CIRCUITS—12 SM5010 series Load cct 1 Load cct 2 R Q output (Including probe capacitance) Q output CL (Including probe capacitance) CL C L = 1 5pF : DUTY , ID D , tr , tf R = 400 Ω Switching Time Measurement Waveform Output duty level (CMOS) Q output 0.9VDD 0.1VDD tr Output duty level (TTL) lim 2.4V 0.4V TW Q output tr Output duty cycle (CMOS) pre Q output TW Output duty cycle (TTL) Q output TW T DUTY= TW/ T 100 (%) ina ry C L = 1 5pF C L = 3 0pF C L = 5 0pF : DUTY , ID D , tr1 , tf1 , tr2 , tf2 , tr4 , tf4 : tr4 , tf4 : tr3 , tf3 0.9VDD 0.1VDD DUTY measurement voltage (0.5V DD ) TW tf 2.4V 0.4V DUTY measurement voltage (1.4V ) tf DUTY measurement voltage (0.5V DD) DUTY= TW/ T 100 (%) T DUTY measurement voltage (1.4V ) NIPPON PRECISION CIRCUITS—13 SM5010 series Output Enable/Disable Delay INH Q output Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with expor t controls on the distribution or dissemination of the products. Customers shall not expor t, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co.jp/ Email: sales @ npc.co.jp NP0015AE 2000.10 pre NIPPON PRECISION CIRCUITS INC. lim NIPPON PRECISION CIRCUITS—14 ina ry VIH VIL tPLZ tPZL INH input waveform tr = tf 10ns