SM5021 series Crystal Oscillator Module ICs
OVERVIEW
The SM5021 series are crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS, that incorporate high-frequency, low current consumption oscillator and output buffer circuits. Highly accurate thin-film feedback resistors and high-frequency capacitors are built-in, eliminating the need for external components to make a stable 3rd overtone oscillator.
FEATURES
I I I
I I
3rd overtone oscillation Oscillator capacitors CG, CD built-in Inverter amplifier feedback resistor built-in (A×, B× series) TTL input level Output drive capability • 4mA (VDD = 2.7V) • 8mA (VDD = 4.5V)
I I
I I I
Output three-state function Operating supply voltage range • 2.7 to 5.5V (A×, K× series) • 4.5 to 5.5V (B×, L× series) Oscillator frequency output 6-pin SOT (SM5021××H) Chip form (CF5021××)
SERIES CONFIGURATION
Operating supply voltage range [V] Chip SM5021AAH SM5021ABH SM5021ACH SM5021ADH SM5021AEH SM5021BAH SM5021BBH SM5021BCH SM5021BDH SM5021KDH SM5021KEH SM5021LDH 2.7 to 5.5 2.7 to 3.6 4.5 to 5.5 2.7 to 5.5 2.7 to 3.6 4.5 to 5.5 22 to 50*3 50 to 70*3 × 4.5 to 5.5 4.5 to 5.5 × 2.7 to 3.6 × 2.7 to 5.5 2.7 to 5.5 4.5 to 5.5 SOT 4.5 to 5.5 Recommended operating frequency range*2 [MHz] 3V 5V operation operation × 22 to 30 30 to 40 40 to 50 50 to 70 22 to 30 30 to 43 43 to 55 55 to 70 × 22 to 30 30 to 43 43 to 55 55 to 70 22 to 70*3 × 22 to 70*3 8 8 15 12 15 8 15 12 8 15 Built-in capacitance [pF] CG CD 1 1 2 3 4 1 1 2 3 3 4 3 6.0 3.3 3.9 2.7 2.7 6.0 3.3 3.9 2.7 – – fo fo CMOS TTL High impedance High impedance fo TTL High impedance fo CMOS High impedance
Version*1
gm ratio
Rf [kΩ]
Output frequency
Output level
Standby output state
*1. Chip form devices have designation CF5021××. *2. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *3. The 3rd overtone frequency range using an external resistor to set the cutoff frequency.
ORDERING INFORMATION
Device SM5021××H CF5021××–2 Package SOT23-6 Chip form
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SM5021 series
PACKAGE DIMENSIONS
(Unit: mm) • 6-pin SOT
2.9 ± 0.2
+ 0.2 − 0.1
1.6
2.8
+ 0.2 − 0.3
0.45 ± 0.15
0.15
1.9 ± 0.2 0.95 1.1 ± 0.1
+ 0.1 − 0.05
0.1 0.4 ± 0.1 0.12 M
0 to 0.15
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SM5021 series
PAD LAYOUT
(Unit: µm)
PINOUT
(Top view)
Q
XTN (1000,800)
HA5021
INHN
1 2 3
6 5 4
XTN VDD Q
VDD
XT
(0,0) VSS
XT INHN
VSS
Chip size : 1.00 × 0.80mm Chip thickness : 220 ± 30µm Chip base : VDD level
PIN DESCRIPTION and PAD DIMENSIONS
Number 1 2 3 4 5 6 Name INHN XT VSS Q VDD XTN I/O I I – O – O Description Output state control input. High impedance when LOW. Pull-up resistor built in Amplifier input. Ground Output. Output frequency (fO) Supply voltage Amplifier output. Crystal oscillator connection pins. Crystal oscillator is connected between XT and XTN Crystal oscillator connection pins. Crystal oscillator is connected between XT and XTN Pad dimensions [µm] X 771 553 150 150 796 836 Y 150 150 140 649 409 636
BLOCK DIAGRAM
VDD VSS XTN
X'tal
Rfo
CG Rf
CD
Q XT
INHN
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SM5021 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current Power dissipation Symbol VDD VIN VOUT Topr Chip form Tstg IOUT PD SOT23-6 SOT23-6 Condition Rating − 0.5 to + 7.0 − 0.5 to VDD + 0.5 − 0.5 to VDD + 0.5 − 40 to + 85 − 65 to + 150 − 55 to + 125 13 250 Unit V V V °C °C mA mW
Recommended Operating Conditions
VSS = 0V, f ≤ 70MHz, CL ≤ 15pF
Rating Parameter Supply voltage Input voltage Operating temperature Symbol VDD VIN TOPR Condition min 2.7 VSS − 20 typ – – – max 5.5 VDD + 80 V V °C Unit
Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or power dissipation.
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SM5021 series
Electrical Characteristics
3V operation: AA, AB, AC, AD, AE, KD, KE series VDD = 2.7 to 3.6V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Parameter Symbol Condition SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E 2.0 – – – – 25 SM5021×AH, CF5021×A Feedback resistance (A× series only) SM5021×BH, CF5021×B Rf Measurement cct 5 SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E CG Built-in capacitance Design value. A monitor pattern on a wafer is tested. SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021×EH, CF5021×E 5.1 2.8 3.3 2.3 7.44 – – – – 13 100 6.0 3.3 3.9 2.7 8 – 0.5 10 10 25 250 6.9 3.8 4.5 3.1 8.56 pF kΩ V V µA Rating min typ max Unit
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
2.1
2.4
–
V
LOW-level output voltage
VOL
–
0.3
0.4
V
HIGH-level input voltage LOW-level input voltage Output leakage current
VIH VIL IZ
INHN INHN Q: Measurement cct 2, VDD = 3.3V, INHN = LOW, VOH = VDD Q: Measurement cct 2, VDD = 3.3V, INHN = LOW, VOL = VSS 70MHz crystal oscillator, measurement cct 3, load cct 1, INHN = open, CL = 15pF Measurement cct 4 SM5021A×H, CF5021A× SM5021K×H, CF5021K×
Current consumption INHN pull-up resistance
IDD RUP
mA kΩ
CD
Design value. A monitor pattern on a wafer is tested.
13.95
15
16.05
pF
11.16
12
12.84
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SM5021 series 5V operation: AA, AB, AC, AD, BA, BB, BC, BD, KD, LD series VDD = 4.5 to 5.5V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition Q: Measurement cct 1, VDD = 4.5V, IOH = 8mA Q: Measurement cct 2, VDD = 4.5V, IOL = 8mA INHN INHN Q: Measurement cct 2, VDD = 5.5V, INHN = LOW, VOH = VDD Q: Measurement cct 2, VDD = 5.5V, INHN = LOW, VOL = VSS 70MHz crystal oscillator, measurement cct 3, load cct 1, INHN = open, CL = 15pF 70MHz crystal oscillator, measurement cct 3, load cct 2, INHN = open, CL = 15pF INHN pull-up resistance RUP Measurement cct 4 SM5021×AH, CF5021×A Feedback resistance (A×, B× series only) Rf Measurement cct 5 SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D CG Built-in capacitance CD Design value. A monitor pattern on a wafer is tested. SM5021×AH, CF5021×A SM5021×BH, CF5021×B SM5021×CH, CF5021×C SM5021×DH, CF5021×D SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021B×H, CF5021B× SM5021L×H, CF5021L× Rating min 3.9 – 2.0 – – – typ 4.2 0.3 – – – – max – 0.4 – 0.8 10 10 Unit V V V V µA
–
18
35 mA
Current consumption
IDD
– 25 5.1 2.8 3.3 2.3 7.44 13.95
18 100 6.0 3.3 3.9 2.7 8 15
35 250 6.9 3.8 4.5 3.1 8.56 16.05 pF pF kΩ kΩ
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SM5021 series
Switching Characteristics
CMOS Output Version
3V operation: AA, AB, AC, AD, AE, KD, KE series
VDD = 2.7 to 3.6V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Rating Parameter Symbol Condition min SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AEH, CF5021AE SM5021KEH, CF5021KE SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD SM5021AEH, CF5021AE SM5021KEH, CF5021KE SM5021AAH, CF5021AA SM5021ABH, CF5021AB SM5021ACH, CF5021AC SM5021ADH, CF5021AD SM5021KDH, CF5021KD typ max Unit
–
5
10
Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD, CL = 15pF Output rise time tr1
–
3.5
7
ns
Measurement cct 6, load cct 1, 0.2VDD to 0.8VDD, CL = 15pF
–
3.5
7
–
5
10
Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD, CL = 15pF Output fall time tf1
–
3.5
7
ns
Measurement cct 6, load cct 1, 0.8VDD to 0.2VDD, CL = 15pF
–
3.5
7
Output duty cycle*1 Output disable delay time Output enable delay time
Duty tPLZ tPZL
Measurement cct 6, load cct 1, VDD = 3V, Ta = 25°C, CL = 15pF, f ≤ 70MHz Measurement cct 6, load cct 1, VDD = 3V, Ta = 25°C, CL = 15pF
45 – –
– – –
55 100 100
% ns ns
*1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation: AA, AB, AC, AD, KD series
VDD = 4.5 to 5.5V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Rating Parameter Output rise time Output fall time Output duty cycle*1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD, CL = 15pF Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD, CL = 15pF Measurement cct 6, load cct 1, VDD = 5V, Ta = 25°C, CL = 15pF, f ≤ 70MHz Measurement cct 6, load cct 1, VDD = 5V, Ta = 25°C, CL = 15pF – – 45 – – typ 3.5 3.5 – – – max 7 7 55 100 100 ns ns % ns ns Unit
*1. The duty cycle characteristic is checked the sample chips of each production lot.
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SM5021 series TTL Output Version
5V operation: BA, BB, BC, BD, LD series
VDD = 4.5 to 5.5V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Rating Parameter Output rise time Output fall time Output duty cycle*1 Output disable delay time Output enable delay time Symbol tr2 tf2 Duty tPLZ tPZL Condition min Measurement cct 6, load cct 2, 0.4V to 2.4V, CL = 15pF Measurement cct 6, load cct 2, 2.4V to 0.4V, CL = 15pF Measurement cct 6, load cct 2, VDD = 5V, Ta = 25°C, CL = 15pF, f ≤ 70MHz Measurement cct 6, load cct 2, VDD = 5V, Ta = 25°C, CL = 15pF – – 45 – – typ 2.5 2.5 – – – max 7 7 55 100 100 ns ns % ns ns Unit
*1. The duty cycle characteristic is checked the sample chips of each production lot.
Current consumption and Output waveform with NPC’s standard crystal
f [MHz]
R [Ω] 18.62 20.53 22.17 22.20 25.42
L [mH] 16.24 11.34 7.40 5.05 4.18
Ca [fF] 1.733 1.396 1.370 1.388 1.254
Cb [pF] 5.337 3.989 4.105 4.226 5.170
Cb
30 40 50 60
L
Ca
R
70
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the oscillator output on Q goes high impedance.
INHN HIGH (or open) LOW Q fO High impedance Oscillator Normal operation Normal operation
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SM5021 series
MEASUREMENT CIRCUITS
Measurement cct 1 Measurement cct 4
VDD
Signal Generator
R1
C1 XT R3 XTN VSS Q R2
5.0V VDD RUP = VSS INHN VDD IPR
Q output
VOH 0V
A
IPR
2.0Vp-p, 10MHz sine wave input signal (3V operation) 3.5Vp-p, 10MHz sine wave input signal (5V operation) C1: 0.001µF R1: 50Ω R2: 525Ω (3V operation/ ×A, ×B, ×C, ×D series) 263Ω (3V operation/ ×E series) 490Ω (5V operation) R3: 100kΩ (K×, L× series)
Measurement cct 2
Measurement cct 5
IOL, IZ VDD Q INHN VSS IZ
XT VDD
A
XTN
Rf = VSS
VDD IRf
V VOL
A
IRf
Measurement cct 3
Measurement cct 6
IDD IST
IDD VDD
A
XT VDD
Signal Generator
R1
C1 XT R3 XTN VSS Q
Rfo
X'tal XTN INHN VSS
Q
2.0Vp-p, 70MHz sine wave input signal (3V operation) 3.5Vp-p, 70MHz sine wave input signal (5V operation) C1: 0.001µF R1: 50Ω R3: 100kΩ (K×, L× series)
Rfo: 2.7kΩ (K×, L× series)
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SM5021 series
Load cct 1
Load cct 2
Q output CL
(Including probe capacitance)
R Q output CL (Including probe capacitance)
CL = 15pF: tr1, tf1
CL = 15pF: tr2 , tf2 R = 800Ω
Switching Time Measurement Waveform
Output duty level (CMOS)
Q output
0.9VDD 0.1VDD TW
0.9VDD 0.1VDD
DUTY measurement voltage (0.5V DD )
tr
Output duty level (TTL)
tf
Q output
2.4V 0.4V TW
2.4V 0.4V
DUTY measurement voltage (1.4V )
tr
Output duty cycle (CMOS)
tf
Q output
TW T
DUTY measurement voltage (0.5V DD) DUTY= TW/ T 100 (%)
Output duty cycle (TTL)
Q output
TW T
DUTY measurement voltage (1.4V ) DUTY= TW/ T 100 (%)
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SM5021 series
Output Enable/Disable Delay
INHN
VIL
VIH
tPLZ Q output
tPZL
INHN input waveform tr = tf 10ns
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SM5021 series
Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp
NC9903CE 2006.04
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