WF5076B4-4

5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any external components. Also, they employ a regulated voltage drive oscillator circuit that significantly reduces current consumption, crystal current, and oscillation characteristics supply voltage dependency. The 5076 series are ideal for miniature, wide pulling range, low power consumption, VCXO modules. FEATURES I I I I I I VCXO with recently developed varicap diode built-in New fabrication process that significantly reduces parasitic capacitance and provides wide pulling range even when using miniature crystal units Regulated voltage drive oscillator circuit for reduced power consumption, crystal drive current, and oscillation characteristics voltage dependency Wide frequency pulling range • ± 160ppm (B1 version, f = 27MHz) (Crystal: γ = 300, C0 = 1.5pF) Operating supply voltage range: 1.6V to 2.0V Oscillation frequency range (for fundamental oscillation): 20MHz to 55MHz (varies with version) I I I I I I Low current consumption: 0.5mA (B1 version, f = 27MHz, no load, VDD = 1.8V) Frequency divider built-in • Selectable by version: fO, fO/2, fO/4, fO/8, fO/16 • Frequency divider output for 1.3MHz (min) low frequency output VC pin input resistance: 10MΩ (min) CMOS output Two types of pad layout selectable by mounting method • A× version: for Flip Chip Bonding • B× version: for Wire Bonding Package: Wafer form (WF5076××) Chip form (CF5076××) APPLICATIONS I 2.5 × 2.0mm, 3.2 × 2.5mm size miniature VCXO modules for digital mobile TV tuner, digital TV (PDP, LCD), PND (Personal Navigation Device), etc. ORDERING INFORMATION Device WF5076××−4 CF5076××−4 Package Wafer form Chip form SEIKO NPC CORPORATION —1 5076 series SERIES CONFIGURATION Operating supply voltage range [V] PAD layout Recommended operating frequency range*1 [MHz] 20 to 40 Flip Chip Bonding 40 to 55 1.6 to 2.0 20 to 40 Wire Bonding 40 to 55 5076BJ (5076BK) (5076BL) (5076BM) (5076BN) *1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Versions in parentheses ( ) are under development. 5076B1 (5076B2) (5076B3) (5076B4) (5076B5) (5076AJ) (5076AK) (5076AL) (5076AM) (5076AN) Output frequency and version name*2 fO output (5076A1) fO/2 output (5076A2) fO/4 output (5076A3) fO/8 output (5076A4) fO/16 output (5076A5) VERSION NAME Device WF5076××–4 Package Wafer form Version name WF5076 Form WF: Wafer form CF: Chip (Die) form −4 Oscillation frequency range, frequency divider function Pad layout type A: for Flip Chip Bonding B: for Wire Bonding CF5076××–4 Chip form SEIKO NPC CORPORATION —2 5076 series PAD LAYOUT (Unit: µm) I 5076A× (for Flip Chip Bonding) I 5076B× (for Wire Bonding) (420, 345) VSS Y VC 5 6 1 (0,0) 2 4 3 (420, 345) Q Y VDD 5 6 1 (0,0) 2 4 3 Q VDD VSS VC (−420, −345) XT X XTN (−420, −345) XTN X XT Chip size: 0.84 × 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm × 90µm Chip base: VSS level Chip size: 0.84 × 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm × 90µm Chip base: VSS level PAD DIMENSIONS Pad dimensions [µm] Pad No. X 1 2 3 4 5 6 –189 189 315 315 –315 –315 Y –240 –240 –21 225 225 –21 PIN DESCRIPTION Pad No. 5076A× 1 2 3 4 5 6 5076B× 2 1 6 5 4 3 Pin XT XTN VDD Q VSS VC I/O I O – O – I Description Crystal connection pin (amplifier input) Crystal connection pin (amplifier output) (+) supply pin Clock output pin (−) supply pin Oscillation frequency control voltage input pin (positive polarity) (frequency increases with increasing voltage) BLOCK DIAGRAM Voltage Regulator CIN Rf VDD Oscillation Detector RD COUT Level Shifter XT XTN RVC2 VC RVC1 CVC1 CVC2 1 N *1 CMOS ouput Buffer Q VSS *1. N = 1, 2, 4, 8, 16 SEIKO NPC CORPORATION —3 5076 series ABSOLUTE MAXIMUM RATINGS VSS = 0V Parameter Supply voltage range Input voltage range Output voltage range Storage temperature range Output current Symbol VDD VIN VOUT TSTG IOUT Conditions Between VDD and VSS Input pins Output pins Wafer form, chip form Q pin Rating −0.5 to 7.0 −0.5 to VDD + 0.5 −0.5 to VDD + 0.5 −65 to +150 20 Unit V V V °C mA RECOMMENDED OPERATING CONDITIONS VSS = 0V Rating Parameter Operating supply voltage Input voltage Operating temperature Oscillation frequency*1 Symbol VDD VIN TOPR fO 5076×1 to 5076×5 5076×J to 5076×N CLOUT ≤ 15pF 5076×1 to 5076×5 5076×J to 5076×N CLOUT ≤ 15pF Input pins Conditions Min 1.6 VSS –40 20 40 1.25 2.5 Typ – – – – – – – Max 2.0 VDD +85 40 55 40 55 V V °C MHz MHz MHz MHz Unit Output frequency fOUT *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. SEIKO NPC CORPORATION —4 5076 series ELECTRICAL CHARACTERISTICS 5076×1 to 5076×5 VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Min 5076×1 (fO), Measurement circuit 1, no load, fO = 27MHz, fOUT = 27MHz, VDD = 1.8V 5076×2 (fO/2), Measurement circuit 1, no load, fO = 27MHz, fOUT = 13.5MHz, VDD = 1.8V Current consumption IDD 5076×3 (fO/4), Measurement circuit 1, no load, fO = 27MHz, fOUT = 6.75MHz, VDD = 1.8V 5076×4 (fO/8), Measurement circuit 1, no load, fO = 27MHz, fOUT = 3.38MHz, VDD = 1.8V 5076×5 (fO/16), Measurement circuit 1, no load, fO = 27MHz, fOUT = 1.69MHz, VDD = 1.8V HIGH-level output voltage LOW-level output voltage Oscillator block built-in resistance VOH VOL RVC1 RVC2 VC = 0.2V CVC1 Oscillator block built-in capacitance CVC2 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. VC = 0.9V VC = 1.6V VC = 0.2V VC = 0.9V VC = 1.6V VC input resistance VC input impedance VC input capacitance Modulation characteristics*1 RVIN ZVIN CVIN fm Measurement circuit 4, Ta = 25°C Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 27MHz Q pin, Measurement circuit 2, IOH = –2.0mA Q pin, Measurement circuit 2, IOL = 2.0mA Measurement circuit 3 210 – – – – – – 10 – – – 420 4.7 2.9 1.7 4.7 2.9 1.7 – 530 31 100 840 – – – – – – – – – – – – – – – VDD – 0.4 – 210 Typ 0.5 0.4 0.3 0.3 0.3 – – 420 Max 1.0 0.8 0.6 0.6 0.6 – 0.4 840 mA mA mA mA mA V V kΩ kΩ pF pF pF pF pF pF MΩ kΩ pF kHz Unit *1. The modulation characteristics may vary with the crystal used. SEIKO NPC CORPORATION —5 5076 series 5076×J to 5076×N VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Min 5076×J (fO), Measurement circuit 1, no load, fO = 48MHz, fOUT = 48MHz, VDD = 1.8V 5076×K (fO/2), Measurement circuit 1, no load, fO = 48MHz, fOUT = 24MHz, VDD = 1.8V Current consumption IDD 5076×L (fO/4), Measurement circuit 1, no load, fO = 48MHz, fOUT = 12MHz, VDD = 1.8V 5076×M (fO/8), Measurement circuit 1, no load, fO = 48MHz, fOUT = 6MHz, VDD = 1.8V 5076×N (fO/16), Measurement circuit 1, no load, fO = 48MHz, fOUT = 3MHz, VDD = 1.8V HIGH-level output voltage LOW-level output voltage Oscillator block built-in resistance VOH VOL RVC1 RVC2 VC = 0.2V CVC1 Oscillator block built-in capacitance CVC2 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. VC = 0.9V VC = 1.6V VC = 0.2V VC = 0.9V VC = 1.6V VC input resistance VC input impedance VC input capacitance Modulation characteristics*1 RVIN ZVIN CVIN fm Measurement circuit 4, Ta = 25°C Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 48MHz Q pin, Measurement circuit 2, IOH = –2.0mA Q pin, Measurement circuit 2, IOL = 2.0mA Measurement circuit 3 210 – – – – – – 10 – – – 420 4.7 2.9 1.7 4.7 2.9 1.7 – 530 31 35 840 – – – – – – – – – – – – – – – VDD – 0.4 – 210 Typ 0.9 0.6 0.5 0.4 0.4 – – 420 Max 1.8 1.2 1.0 0.8 0.8 – 0.4 840 mA mA mA mA mA V V kΩ kΩ pF pF pF pF pF pF MΩ kΩ pF kHz Unit *1. The modulation characteristics may vary with the crystal used. SEIKO NPC CORPORATION —6 5076 series SWITCHING CHARACTERISTICS VDD = 1.6 to 2.0V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Min Output rise time Output fall time Output duty cycle tr tf Duty Measurement circuit 7, 0.2VDD → 0.8VDD, CLOUT = 15pF Measurement circuit 7, 0.8VDD → 0.2VDD, CLOUT = 15pF Measurement circuit 7, Ta = 25°C, CLOUT = 15pF, VDD = 1.8V – – 45 Typ 3.1 3.1 50 Max 6.0 6.0 55 ns ns % Unit Switching Time Measurement Waveform Q 0.8VDD 0.8VDD 0.2VDD TW T 0.2VDD DUTY measurement voltage (0.5VDD) DUTY= TW/ T 100 (%) tr tf SEIKO NPC CORPORATION —7 5076 series MEASUREMENT CIRCUITS Measurement Circuit 1 Measurement parameter: IDD IDD A Measurement Circuit 4 Measurement parameter: RVIN VDD VDD Crystal IVIN A XT XTN RVIN = VDD IVIN XT XTN 0.1µF Q VC VSS VC VSS Measurement Circuit 5 Measurement Circuit 2 Measurement parameter: VOH, VOL VDD XT Signal Generator 0.001µF XT Measurement parameter: CVIN, ZVIN VDD 0.1µF Q XTN 50Ω Q 50Ω XTN VC VSS VOH VOL V 0.1µF VS Impedance Analyzer (HP 4194A) VC VSS ∆V VOH VS VS VOL VC input signal: 100Hz to 10kHz, 0.1Vp-p ∆V Measurement Circuit 6 Measurement parameter: fm VDD Crystal Modulation signal VS adjusted such that ∆V = 50 × IOH. XT input signal: 1Vp-p, sine wave VS adjusted such that ∆V = 50 × IOL. XT 0.1µF Q XTN R1 VC R2 Measurement Circuit 3 Measurement parameter: RVC1, RVC2 Gain-phase Analyzer (HP 4194A) Modulaiton Analyzer (HP 8901B) C1 VSS CLOUT = 15pF Demodulation signal IXT A XT XTN VC VDD IXTN A XT XTN VC VDD C1 = 33µF, R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p Measurement Circuit 7 VSS VSS Measurement parameter: Duty, tr , tf RVC1 = VDD IXT RVC2 = VDD IXTN Crystal VDD XT XTN 0.1µF Q VC VSS CLOUT = 15pF (Including probe capacitance) SEIKO NPC CORPORATION —8 5076 series FUNCTIONAL DESCRIPTION Oscillation Start-up Detector Function The devices also feature an oscillation start-up detector circuit. This circuit functions to disable the outputs until the oscillation starts. This prevents unstable oscillator output at oscillator start-up when power is applied. TYPICAL PERFORMANCE (5076B1) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement Parameter C0 [pF] γ (= C0/C1) fO = 27MHz 1.5 300 I Crystal parameters L1 C1 R1 C0 Frequency Pulling Range 250 200 150 Pulling range [ppm] 100 50 0 −50 −100 −150 −200 −250 0.0 Pulling Sensitivity 250 200 Sensitivity [ppm/V] 150 100 50 0 0.3 0.6 0.9 VC [V] 1.2 1.5 1.8 0.0 0.3 0.6 0.9 VC [V] 1.2 1.5 1.8 VDD = 1.8V, fOUT = 27MHz, Ta = R.T. VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Measurement circuit VDD Crystal XT XTN 0.1µF Q VC VSS CLOUT = 15pF (Including probe capacitance) SEIKO NPC CORPORATION —9 5076 series Current Consumption 5 4 Measurement circuit IDD A VDD Crystal XT IDD [mA] 3 2 XTN CLOUT = 15pF VC = 0V VC = 0.5VDD VC = VDD VC = 0V VC = 0.5VDD VC = VDD Q 0.1µF VC 1 CLOUT = No load 1.6 1.7 1.8 VDD [V] 1.9 VSS 0 2.0 fOUT = 27MHz, Ta = R.T. Frequency Stability by Supply Voltage Change Measurement circuit 3.0 VDD 2.0 1.0 ∆f/f [ppm] 0.0 −1.0 −2.0 −3.0 VC = 0V VC = 1.8V VC = 0.9V Crystal XT XTN VC Q 0.1µF VSS CLOUT = 15pF (Including probe capacitance) 1.6 1.7 1.8 VDD [V] 1.9 2.0 fOUT = 27MHz, ± 0ppm at VDD = 1.8V Drive Level 30 25 Measurement circuit VDD Crystal XT 0.1µF Drive level [µW] 20 15 10 5 0 0.0 0.3 0.6 0.9 VC [V] 1.2 1.5 1.8 Tektronix CT-6 Current Probe XTN IX'tal VC Q VSS CLOUT = 15pF VDD = 1.8V, fOUT = 27MHz, Ta = R.T. DL = (IX’tal)2 × Re DL: drive level IX’tal: current flowing to crystal (RMS value) Re: crystal effective resistance SEIKO NPC CORPORATION —10 5076 series Negative Resistance Frequency [MHz] 25 30 35 Measurement circuit 15 0 20 40 45 Negative resistance [Ω] VC = 1.8V −200 VC = 0.9V Network Analyzer (Agilent 4396B) S-Parameter Test Set (Agilent 85046A) C0 = 2pF VDD XT 0.1µF XTN VC Q −400 VSS −600 VC = 0V −800 VDD = 1.8V, C0 = 2pF, Ta = R.T. Note. "C0" value is set, concerning the actual crystal characteristics connected between XT and XTN. The data is measured with Agilent 4396B using NPC’s original measurement jig. The values may vary with measurement jig and conditions. Phase Noise −60 −80 −100 −120 −140 −160 10 100 Measurement circuit VDD Crystal Phase noise [dBc/Hz] XT 0.1µF Q 200Ω XTN VC 0.01µF Signal Source Analyzer (Agilent E5052A) VSS VC = 1.8V VC = 0.9V VC = 0V 1,000 10,000 100,000 1,000,000 10,000,000 Offset Frequency [Hz] CLOUT = 15pF VDD = 1.8V, fOUT = 27MHz, Ta = R.T. SEIKO NPC CORPORATION —11 5076 series Modulation Characteristics 3 Measurement circuit VDD 0 −3 −6 −9 −12 Modulation signal Crystal XT 0.1µF Q XTN R1 VC R2 fm [dB] Gain-phase Analyzer (HP 4194A) Modulaiton Analyzer (HP 8901B) 0 1 10 Frequency [kHz] 100 1000 C1 VSS CLOUT = 15pF Demodulation signal C1 = 33µF, R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Output Waveform Measurement equipment: Oscilloscope; DSO80604B (Agilent) Measurement circuit VDD Crystal XT XTN 0.1µF Q VC VSS CLOUT = 15pF (Including probe capacitance) VDD = 1.8V, fOUT = 27MHz, VC = 0.5VDD, CLOUT = 15pF, Ta = R.T. SEIKO NPC CORPORATION —12 5076 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp NC0811AE 2009.02 SEIKO NPC CORPORATION —13