2N7000

2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor March 1993 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage low current applications such as small servo motor controls power MOSFET gate drivers and other switching applications Features Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378 – 2 TL G 11378–1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378 – 3 Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes from Case for 10 Seconds TA e 25 C 200 500 400 32 115 800 200 16 2N7000 2N7002 NDF7000A 60 60 g 40 NDS7002A Units V V V 400 2000 625 5 280 1500 300 24 b 65 to 150 mA mA mW mW C C C b 55 to 150 300 C1995 National Semiconductor Corporation TL G 11378 RRD-B30M115 Printed in U S A 2N7000 Electrical Characteristics TC e 25 C unless otherwise noted Symbol OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 48V VGS e 0V TC e 125 C IGSSF Gate-Body Leakage Forward VGS e b15V VDS e 0V 60 1 1 b 10 Parameter Conditions Min Typ Max Units V mA mA nA ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage VDS e VGS ID e 1 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 10V ID e 0 5A VGS e 4 5V ID e 75 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 4 5V VDS e 10V VDS e 10V ID e 200 mA 75 100 08 21 12 19 06 0 14 600 320 3 5 9 25 04 V X X V V mA ms VDS(ON) DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 60 25 5 pF pF pF SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time VDD e 15V ID e 0 5V VGS e 10V RG e 25X RL e 25X 10 10 ns ns BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 200 mA 200 500 15 mA mA V THERMAL CHARACTERISTICS RiJA RiJC Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 312 5 40 CW CW Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 2 2N7002 Electrical Characteristics TC e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 60V VGS e 0V TC e 125 C IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse VGS e 20V VGS e b20V 60 1 500 100 b 100 V mA mA nA nA ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS e VGS ID e 250 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 5V ID e 50 mA TC e 125 C VDS(ON) Drain-Source On-Voltage VGS e 10V ID e 0 5A VGS e 5V ID e 50 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 10V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 500 80 1 21 12 2 17 28 06 0 09 2700 320 25 75 13 5 75 13 5 3 75 15 V X X X X V V mA ms DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 50 25 5 pF pF pF SWITCHING CHARACTERISTICS tON tOFF Turn-On Time Turn-Off Time VDD e 30V ID e 200 mA VGS e 10V RGEN e 25X RL e 150X 20 20 ns ns BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 115 mA 115 800 15 mA mA V THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 625 CW Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 3 NDF7000A Electrical Characteristics TC e 25 C unless otherwise noted Symbol OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 48V VGS e 0V TC e 125 C IGSSF Gate-Body Leakage Forward VGS e b15V 60 1 1 b 10 Parameter Conditions Min Typ Max Units V mA mA nA ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage VDS e VGS ID e 1 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 10V ID e 500 mA VGS e 4 5V ID e 75 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 4 5V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 400 100 08 21 12 2 06 0 14 600 320 3 2 35 1 0 225 V X X V V mA ms VDS(ON) DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 60 25 5 pF pF pF SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time VDD e 15V ID e 500 mA VGS e 10V RG e 25X RL e 25X 10 10 ns ns BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 400 mA 0 88 400 2000 12 mA mA V THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 200 CW Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 4 NDS7002A Electrical Characteristics TC e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 60V VGS e 0V TC e 125 C IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse VGS e 20V VGS e b20V 60 1 500 100 b 100 V mA mA nA nA ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS e VGS ID e 250 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 5V ID e 50 mA TC e 125 C VDS(ON) Drain-Source On-Voltage VGS e 10V ID e 500 mA VGS e 5 0V ID e 50 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 10V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 500 80 1 21 12 2 17 28 06 0 09 2700 320 25 2 35 3 5 1 0 15 V X X X X V V mA ms DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 50 25 5 pF pF pF SWITCHING CHARACTERISTICS tON tOFF Turn-On Time Turn-Off Time VDD e 30V ID e 200 mA VGS e 10V RG e 25X RL e 150X 20 20 ns ns BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 400 mA 0 88 280 1500 12 mA mA V THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 417 CW Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 5 Typical Electrical Characteristics 2N7000 2N7002 NDF7000A NDS7002A TL G 11378–4 TL G 11378 – 5 FIGURE 1 On-Region Characteristics FIGURE 2 rDS(ON) Variation with Drain Current and Gate Voltage TL G 11378–6 TL G 11378 – 7 FIGURE 3 Transfer Characteristics FIGURE 4 Breakdown Voltage Variation with Temperature TL G 11378–8 TL G 11378 – 9 FIGURE 5 Gate Threshold Variation with Temperature FIGURE 6 On-Resistance Variation with Temperature 6 Typical Electrical Characteristics (Continued) 2N7000 2N7002 NDF7000A NDS7002A (Continued) TL G 11378 – 10 TL G 11378 – 11 FIGURE 7 On-Resistance vs Drain Current FIGURE 8 Body Diode Forward Voltage Variation with Current and Temperature TL G 11378 – 12 TL G 11378 – 13 FIGURE 9 Capacitance vs Drain-Source Voltage FIGURE 10 Gate Charge vs Gate-Source Voltage TL G 11378 – 14 TL G 11378 – 15 FIGURE 11 2N7000 Safe Operating Area FIGURE 12 2N7002 Safe Operating Area 7 Typical Electrical Characteristics (Continued) 2N7000 2N7002 NDF7000A NDS7002A (Continued) TL G 11378 – 16 TL G 11378 – 17 FIGURE 13 NDF7000A Safe Operating Area FIGURE 14 NDS7002A Safe Operating Area TL G 11378 – 18 FIGURE 15 TO-92 Transient Thermal Response TL G 11378 – 19 FIGURE 16 SOT-23 Transient Thermal Response 8 Physical Dimensions inches (millimeters) TL G 11378 – 20 TO-92 9 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions inches (millimeters) (Continued) TL G 11378 – 21 Note 1 Meets all JEDEC dimensional requirements for TO-236AB Note 2 Controlling dimension millimeters Note 3 Available also in TO-236AA Contact your local National Semiconductor representative for delivery and ordering information Note 4 Tape and reel is the standard packaging method for TO-236 TO-236AB (SOT-23) (Notes 3 4) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications