54F544LMQB

54F 74F544 Octal Registered Transceiver December 1994 54F 74F544 Octal Registered Transceiver General Description The ’F544 octal transceiver contains two sets of D-type latches for temporary storage of data flowing in either direction Separate Latch Enable and Output Enable inputs are provided for each register to permit independent control of inputting and outputting in either direction of data flow The A outputs are guaranteed to sink 24 mA (20 mA Mil) while the B outputs are rated for 64 mA (48 mA Mil) The ’F544 inverts data in both directions Features Y Y Y Y Y 8-bit octal transceiver Back-to-back registers for storage Separate controls for data flow in each direction A outputs sink 24 mA (20 mA Mil) B outputs sink 64 mA (48 mA Mil) 300 mil slim PDIP Commercial 74F544SPC Military Package Number N24C Package Description 24-Lead (0 300 Wide) Molded Dual-In-Line 24-Lead Ceramic Dual-In-Line 24-Lead (0 300 Wide) Ceramic Dual-In-Line 24-Lead (0 300 Wide) Molded Small Outline JEDEC 24-Lead Molded Shrink Small Outline EIAJ Type II 24-Lead Cerpack 24-Lead Ceramic Leadless Chip Carrier Type C 54F544DM (Note 2) 54F544SDM (Note 2) 74F544SC (Note 1) 74F544MSA (Note 1) 54F544FM (Note 2) 54F544LM (Note 2) J24A J24F M24B MSA24 W24C E28A Note 1 Devices also available in 13 reel Use suffix e SCX and MSAX Note 2 Military grade device with environmental and burn-in processing Use suffix e DMQB FMQB and LMQB Logic Symbols IEEE IEC TL F 9555 – 2 TL F 9555 – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation TL F 9555 RRD-B30M75 Printed in U S A Connection Diagrams Pin Assignment for DIP SOIC and Flatpak Pin Assignment for LCC TL F 9555 – 4 TL F 9555–3 Unit Loading Fan Out 54F 74F Pin Names Description UL HIGH LOW Input IIH IIL Output IOH IOL OEAB OEBA CEAB CEBA LEAB LEBA A 0 – A7 B 0 – B7 A-to-B Output Enable Input (Active LOW) 10 10 20 mA b0 6 mA B-to-A Output Enable Input (Active LOW) 10 10 20 mA b0 6 mA A-to-B Enable Input (Active LOW) 10 20 20 mA b1 2 mA B-to-A Enable Input (Active LOW) 10 20 20 mA b1 2 mA A-to-B Latch Enable Input (Active LOW) 10 10 20 mA b0 6 mA B-to-A Latch Enable Input (Active LOW) 10 10 20 mA b0 6 mA A-to-B Data Inputs or 3 5 1 083 70 mA b650 mA B-to-A TRI-STATE Outputs 150 40(33 3) b3 mA 24 mA (20 mA) B-to-A Data Inputs or 3 5 1 083 70 mA b650 mA A-to-B TRI-STATE Outputs 600 106 6(80) b12 mA 64 mA (48 mA) Functional Description The ’F544 contains two sets of eight D-type latches with separate input and output controls for each set For data flow from A to B for example the A-to-B Enable (CEAB) input must be LOW in order to enter data from A0 – A7 or take data from B0 – B7 as indicated in the Data I O Control Table With CEAB LOW a LOW signal on the A-to-B Latch Enable (LEAB) input makes the A-to-B latches transparent a subsequent LOW-to-HIGH transition of the LEAB signal puts the A latches in the storage mode and their outputs no longer change with the A inputs With CEAB and OEAB both LOW the TRI-STATE B output buffers are active and reflect the data present at the output of the A latches Control of data flow from B to A is similar but using the CEBA LEBA and OEBA inputs Data I O Control Table Inputs CEAB H X L X L LEAB X H L X X OEAB X X X H L Latched Latched Transparent High Z Latch Status Output Buffers High Z Driving H e HIGH Voltage Level L e LOW Voltage Level X e Immaterial A-to-B data flow shown B-to-A flow control is the same except using CEBA LEBA and OEBA 2 Logic Diagram TL F 9555 – 5 Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays 3 Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperature Ambient Temperature under Bias Junction Temperature under Bias Plastic VCC Pin Potential to Ground Pin Input Voltage (Note 2) Input Current (Note 2) b 65 C to a 150 C b 55 C to a 125 C b 55 C to a 175 C b 55 C to a 150 C b 0 5V to a 7 0V b 0 5V to a 7 0V b 30 mA to a 5 0 mA Voltage Applied to Output in HIGH State (with VCC e 0V) b 0 5V to VCC Standard Output b 0 5V to a 5 5V TRI-STATE Output Current Applied to Output in LOW State (Max) twice the rated IOL (mA) Recommended Operating Conditions Free Air Ambient Temperature Military Commercial Supply Voltage Military Commercial b 55 C to a 125 C 0 C to a 70 C a 4 5V to a 5 5V a 4 5V to a 5 5V Note 1 Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired Functional operation under these conditions is not implied Note 2 Either voltage limit or current limit is sufficient to protect inputs DC Electrical Characteristics Symbol VIH VIL VCD VOH Parameter Min Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output HIGH Voltage 54F 10% VCC 54F 10% VCC 54F 10% VCC 74F 10% VCC 74F 10% VCC 74F 10% VCC 74F 5% VCC 74F 5% VCC 54F 10% VCC 54F 10% VCC 74F 10% VCC 74F 10% VCC 54F 74F 54F 74F 54F 74F 54F 74F 74F 74F 4 75 3 75 b0 6 b1 2 54F 74F Typ Max Units V 08 b1 2 VCC Conditions Recognized as a HIGH Signal Recognized as a LOW Signal 20 V V Min IIN e b18 mA (except An Bn) IOH IOH IOH IOH IOH IOH IOH IOH IOL IOL IOL IOL e e e e e e e e e e e e b 1 mA (An) b 3 mA (An Bn) b 12 mA (Bn) b 1 mA (An) b 3 mA (An Bn) b 15 mA (Bn) b 1 mA (An) b 3 mA (An Bn) 25 24 20 25 24 20 27 27 05 0 55 05 0 55 20 0 50 100 70 10 05 250 250 V Min VOL Output LOW Voltage V Min 20 mA (An) 48 mA (Bn) 24 mA (An) 64 mA (Bn) IIH IBVI IBVIT ICEX VID IOD IIL IIH a IOZH IIL a IOZL Input HIGH Current Input HIGH Current Breakdown Test Input HIGH Current Breakdown (I O) Output HIGH Leakage Current Input Leakage Test Output Leakage Circuit Current Input LOW Current mA mA mA mA V mA mA mA mA Max Max Max Max 00 00 Max Max Max VIN e 2 7V (except An Bn) VIN e 7 0V (except An Bn) VIN e 5 5V (An Bn) VOUT e VCC (An Bn) IID e 1 9 mA All Other Pins Grounded VIOD e 150 mV All Other Pins Grounded VIN e 0 5V (OEAB OEBA) VIN e 0 5V (CEAB CEBA) VOUT e 2 7V (An Bn) VOUT e 0 5V (An Bn) Output Leakage Current Output Leakage Current 70 b 650 4 DC Electrical Characteristics (Continued) Symbol IOS IZZ ICCH ICCL ICCZ Parameter Min Output Short-Circuit Current Bus Drainage Test Power Supply Current Power Supply Current Power Supply Current 70 85 83 b 60 b 100 54F 74F Typ Max b 150 b 225 Units VCC Conditions VOUT e 0V (An) VOUT e 0V (Bn) VOUT e 5 25V (An Bn) VO e HIGH VO e LOW VO e HIGH Z mA mA mA mA mA Max 0 0V Max Max Max 500 105 130 125 AC Electrical Characteristics 74F Symbol Parameter Min tPLH tPHL tPLH tPHL tPLH tPHL tPZH tPZL tPHZ tPLZ Propagation Delay Transparent Mode An to Bn or Bn to An Propagation Delay LEBA to An Propagation Delay LEAB to Bn Output Enable Time OEBA or OEAB to An or Bn CEBA or CEAB to An or Bn Output Disable Time OEBA or OEAB to An or Bn CEBA or CEAB to An or Bn 30 30 60 40 60 40 30 40 10 25 TA e a 25 C VCC e a 5 0V CL e 50 pF Typ 70 50 10 0 70 10 0 70 70 75 60 55 Max 95 65 13 0 95 13 0 95 90 10 5 80 10 5 54F TA VCC e Mil CL e 50 pF Min 30 25 60 40 60 40 30 40 20 20 Max 12 0 85 18 0 11 5 18 0 11 5 11 0 13 0 10 0 95 74F TA VCC e Com CL e 50 pF Min 30 30 60 40 60 40 30 40 10 25 Max 10 5 75 14 5 10 5 14 5 10 5 10 0 12 0 ns 90 11 5 ns Units ns ns AC Operating Requirements 74F Symbol Parameter TA e a 25 C VCC e a 5 0V Min ts(H) ts(L) th(H) th(L) tw(L) Setup Time HIGH or LOW An or Bn to LEBA or LEAB Hold Time HIGH or LOW An or Bn to LEBA or LEAB Latch Enable B to A Pulse Width LOW 30 30 30 30 60 Max 54F TA VCC e Mil Min 30 30 30 30 90 Max 74F TA VCC e Com Min 30 30 30 30 75 ns Max Units ns 5 Ordering Information The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows 74F Temperature Range Family 74F e Commercial 54F e Military Device Type Package Code SP e Slim Plastic DIP D e Ceramic DIP SD e Slim Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline (SOIC) MSA e Shrink Small Outline (SOIC) EIAJ Type II 544 S C X Special Variations QB e Military grade device with environmental and burn-in processing X e Devices shipped in 13 reel Temperature Range C e Commercial (0 C to a 70 C) M e Military (b55 C to a 125 C) 6 Physical Dimensions inches (millimeters) 28-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E28A 24-Lead Ceramic Dual-In-Line Package (D) NS Package Number J24A 7 Physical Dimensions inches (millimeters) (Continued) 24-Lead (0 300 Wide) Ceramic Dual-In-Line Package (SD) NS Package Number J24F 24-Lead (0 300 Wide) Molded Small Outline Package JEDEC (S) NS Package Number M24B 8 Physical Dimensions inches (millimeters) (Continued) 24-Lead Molded Shrink Small Outline EIAJ Type II (MSA) NS Package Number MSA24 24-Lead (0 300 Wide) Molded Dual-In-Line Package (SP) NS Package Number N24C 9 54F 74F544 Octal Registered Transceiver Physical Dimensions inches (millimeters) (Continued) 24-Lead Ceramic Flatpak (F) NS Package Number W24C LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 2900 Semiconductor Drive P O Box 58090 Santa Clara CA 95052-8090 Tel 1(800) 272-9959 TWX (910) 339-9240 National Semiconductor GmbH Livry-Gargan-Str 10 D-82256 F4urstenfeldbruck Germany Tel (81-41) 35-0 Telex 527649 Fax (81-41) 35-1 National Semiconductor Japan Ltd Sumitomo Chemical Engineering Center Bldg 7F 1-7-1 Nakase Mihama-Ku Chiba-City Ciba Prefecture 261 Tel (043) 299-2300 Fax (043) 299-2500 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductores Do Brazil Ltda Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel (55-11) 212-5066 Telex 391-1131931 NSBR BR Fax (55-11) 212-1181 National Semiconductor (Australia) Pty Ltd Building 16 Business Park Drive Monash Business Park Nottinghill Melbourne Victoria 3168 Australia Tel (3) 558-9999 Fax (3) 558-9998 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications