54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates
June 1989
54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates
General Description
This device contains two independent gates each of which performs the logic NAND function
Features
Y
Alternate Military Aerospace device (54LS20) is available Contact a National Semiconductor Sales Office Distributor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6355 – 1
Order Number 54LS20DMQB 54LS20FMQB 54LS20LMQB DM54LS20J DM54LS20W DM74LS20M or DM74LS20N See NS Package Number E20A J14A M14A N14A or W14B
Function Table
Y e ABCD Inputs A X X X L H B X X L X H C X L X X H D L X X X H Output Y H H H H L
H e High Logic Level L e Low Logic Level X e Either Low or High Logic Level
C1995 National Semiconductor Corporation
TL F 6355
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings (Note) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications
Supply Voltage 7V Input Voltage 7V Operating Free Air Temperature Range b 55 C to a 125 C DM54LS and 54LS DM74LS 0 C to a 70 C Storage Temperature Range
b 65 C to a 150 C
Note The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed The device should not be operated at these limits The parametric values defined in the ‘‘Electrical Characteristics’’ table are not guaranteed at the absolute maximum ratings The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation
Recommended Operating Conditions
Symbol VCC VIH VIL IOH IOL TA Parameter Min Supply Voltage High Level Input Voltage Low Level Input Voltage High Level Output Current Low Level Output Current Free Air Operating Temperature
b 55
DM54LS20 Nom 5 Max 55 Min 4 75 2 07
b0 4
DM74LS20 Nom 5 Max 5 25
Units V V 08
b0 4
45 2
V mA mA C
4 125 0
8 70
Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted)
Symbol VI VOH VOL Parameter Input Clamp Voltage High Level Output Voltage Low Level Output Voltage Conditions VCC e Min II e b18 mA VCC e Min IOH e Max VIL e Max VCC e Min IOL e Max VIH e Min IOL e 4 mA VCC e Min II IIH IIL IOS ICCH ICCL Input Current Input Voltage Max VCC e Max VI e 7V VCC e Max VI e 2 7V VCC e Max VI e 0 4V VCC e Max (Note 2) VCC e Max VCC e Max DM54 DM74
b 20 b 20
Min
Typ (Note 1)
Max
b1 5
Units V V
DM54 DM74 DM54 DM74 DM74
25 27
34 34 0 25 0 35 0 25 04 05 04 01 20
b 0 36 b 100 b 100
V
mA mA mA mA mA mA
High Level Input Current Low Level Input Current Short Circuit Output Current Supply Current with Outputs High Supply Current with Outputs Low
04 12
08 22
Switching Characteristics at VCC e 5V and TA e 25 C (See Section 1 for Test Waveforms and Output Load)
RL e 2 kX Symbol Parameter Min tPLH tPHL Propagation Delay Time Low to High Level Output Propagation Delay Time High to Low Level Output 3 3 CL e 15 pF Max 10 10 CL e 50 pF Min 4 4 Max 15 15 ns ns Units
Note 1 All typicals are at VCC e 5V TA e 25 C Note 2 Not more than one output should be shorted at a time and the duration should not exceed one second
2
3
Physical Dimensions inches (millimeters)
Ceramic Leadless Chip Carrier Package (E) Order Number 54LS20LMQB NS Package Number E20A
14-Lead Ceramic Dual-In-Line Package (J) Order Number 54LS20DMQB or DM54LS20J NS Package Number J14A
4
Physical Dimensions inches (millimeters) (Continued)
14-Lead Small Outline Molded Package (M) Order Number DM74LS20M NS Package Number M14A
14-Lead Molded Dual-In-Line Package (N) Order Number DM74LS20N NS Package Number N14A
5
54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Flat Package (W) Order Number 54LS20FMQB or DM54LS20W NS Package Number W14B
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