CD4011BC

CD4001BM CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series Gate March 1988 CD4001BM CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series Gate General Description These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors They have equal source and sink current capabilities and conform to standard B series output drive The devices also have buffered outputs which improve transfer characteristics by providing very high gain All inputs are protected against static discharge with diodes to VDD and VSS Features Y Y Y Y Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS 5V – 10V – 15V parametric ratings Symmetrical output characteristics Maximum input leakage 1 mA at 15V over full temperature range Schematic Diagrams CD4001BC BM of device shown JeAaB Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL F 5939 – 2 All inputs protected by standard CMOS protection circuit TL F 5939 – 1 CD4011BC BM of device shown JeAB Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL F 5939 – 6 All inputs protected by standard CMOS protection circuit TL F 5939 – 5 C1995 National Semiconductor Corporation TL F 5939 RRD-B30M105 Printed in U S A Absolute Maximum Ratings (Notes 1 and 2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Voltage at any Pin Power Dissipation (PD) Dual-In-Line Small Outline VDD Range Storage Temperature (TS) Lead Temperature (TL) (Soldering 10 seconds) b 0 5V to VDD a 0 5V Operating Conditions Operating Range (VDD) Operating Temperature Range CD4001BM CD4011BM CD4001BC CD4011BC 3 VDC to 15 VDC b 55 C to a 125 C b 40 C to a 85 C 700 mW 500 mW b 0 5 VDC to a 18 VDC b 65 C to a 150 C 260 C CD4011BM (Note 2) b 55 C a 25 C a 125 C DC Electrical Characteristics CD4001BM Symbol IDD Parameter Quiescent Device Current Low Level Output Voltage High Level Output Voltage Low Level Input Voltage High Level Input Voltage Low Level Output Current (Note 3) High Level Output Current (Note 3) Input Current Conditions VDD e 5V VIN e VDD or VSS VDD e 10V VIN e VDD or VSS VDD e 15V VIN e VDD or VSS VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V Units mA mA mA V V V V V V Min Max 0 25 0 50 10 0 05 0 05 0 05 Min Typ 0 004 0 005 0 006 0 0 0 Max 0 25 0 50 10 0 05 0 05 0 05 Min Max 75 15 30 0 05 0 05 0 05 VOL VOH VIL VDD e 5V VO e 4 5V VDD e 10V VO e 9 0V VDD e 15V VO e 13 5V VDD e 5V VO e 0 5V VDD e 10V VO e 1 0V VDD e 15V VO e 1 5V VDD e 5V VO e 0 4V VDD e 10V VO e 0 5V VDD e 15V VO e 1 5V VDD e 5V VO e 4 6V VDD e 10V VO e 9 5V VDD e 15V VO e 13 5V VDD e 15V VIN e 0V VDD e 15V VIN e 15V 35 70 11 0 0 64 16 42 b 0 64 b1 6 b4 2 ( ( l IO l k 1 m A l IO l k 1 m A 4 95 9 95 14 95 4 95 9 95 14 95 15 30 40 35 70 11 0 0 51 13 34 b 0 51 b1 3 b3 4 b 0 10 5 10 15 2 4 6 3 6 9 0 88 2 25 88 b 0 88 b 2 25 b8 8 b 10 b 5 b 0 10 4 95 9 95 14 95 15 30 40 35 70 11 0 0 36 09 24 b 0 36 b0 9 b2 4 b1 0 15 30 40 V V V V V V mA mA mA mA mA mA VIH IOL IOH IIN 0 10 10b5 0 10 10 mA mA Connection Diagrams CD4001BC CD4001BM Dual-In-Line Package CD4011BC CD4011BM Dual-In-Line Package TL F 5939 – 4 Top View TL F 5939–3 Order Number CD4001B or CD4011B Top View 2 DC Electrical Characteristics CD4001BC Symbol IDD Parameter Quiescent Device Current Low Level Output Voltage High Level Output Voltage Low Level Input Voltage High Level Input Voltage Low Level Output Current (Note 3) High Level Output Current (Note 3) Input Current Conditions VDD e 5V VIN e VDD or VSS VDD e 10V VIN e VDD or VSS VDD e 15V VIN e VDD or VSS VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V CD4011BC (Note 2) b 40 C a 25 C a 85 C Units mA mA mA V V V V V V Min Max 1 2 4 0 05 0 05 0 05 Min Typ 0 004 0 005 0 006 0 0 0 Max 1 2 4 0 05 0 05 0 05 Min Max 75 15 30 0 05 0 05 0 05 VOL VOH VIL VDD e 5V VO e 4 5V VDD e 10V VO e 9 0V VDD e 15V VO e 13 5V VDD e 5V VO e 0 5V VDD e 10V VO e 1 0V VDD e 15V VO e 1 5V VDD e 5V VO e 0 4V VDD e 10V VO e 0 5V VDD e 15V VO e 1 5V VDD e 5V VO e 4 6V VDD e 10V VO e 9 5V VDD e 15V VO e 13 5V VDD e 15V VIN e 0V VDD e 15V VIN e 15V 35 70 11 0 0 52 13 36 b 0 52 b1 3 b3 6 ( (ll l IO l k 1 m A IO k 1 m A 4 95 9 95 14 95 4 95 9 95 14 95 15 30 40 35 70 11 0 0 44 11 30 b 0 44 b1 1 b3 0 b 0 30 5 10 15 2 4 6 3 6 9 0 88 2 25 88 b 0 88 b 2 25 b8 8 b 10 b 5 b 0 30 4 95 9 95 14 95 15 30 40 35 70 11 0 0 36 09 24 b 0 36 b0 9 b2 4 b1 0 15 30 40 V V V V V V mA mA mA mA mA mA VIH IOL IOH IIN 0 30 10b5 0 30 10 mA mA AC Electrical Characteristics CD4001BC CD4001BM TA e 25 C Input tr tf e 20 ns CL e 50 pF RL e 200k Typical temperature coefficient is 0 3% C Symbol tPHL Parameter Propagation Delay Time High-to-Low Level Propagation Delay Time Low-to-High Level Transition Time Conditions VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V Any Input Any Gate Typ 120 50 35 110 50 35 90 50 40 5 14 Max 250 100 70 250 100 70 200 100 80 75 Units ns ns ns ns ns ns ns ns ns pF pF tPLH tTHL tTLH CIN CPD Average Input Capacitance Power Dissipation Capacity AC Parameters are guaranteed by DC correlated testing Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation Note 2 All voltages measured with respect to VSS unless otherwise specified Note 3 IOL and IOH are tested one output at a time 3 AC Electrical Characteristics CD4011BC CD4011BM TA e 25 C Input tr tf e 20 ns CL e 50 pF RL e 200k Typical Temperature Coefficient is 0 3% C Symbol tPHL Parameter Propagation Delay High-to-Low Level Propagation Delay Low-to-High Level Transition Time Conditions VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V VDD e 5V VDD e 10V VDD e 15V Any Input Any Gate Typ 120 50 35 85 40 30 90 50 40 5 14 Max 250 100 70 250 100 70 200 100 80 75 Units ns ns ns ns ns ns ns ns ns pF pF tPLH tTHL tTLH CIN CPD Average Input Capacitance Power Dissipation Capacity AC Parameters are guaranteed by DC correlated testing Typical Performance Characteristics Typical Transfer Characteristics Typical Transfer Characteristics Typical Transfer Characteristics TL F 5939–7 TL F 5939 – 8 TL F 5939 – 9 Typical Transfer Characteristics TL F 5939 – 11 TL F 5939–10 TL F 5939 – 12 FIGURE 5 FIGURE 6 4 Typical Performance Characteristics (Continued) TL F 5939–13 TL F 5939 – 14 TL F 5939 – 15 FIGURE 7 FIGURE 8 FIGURE 9 TL F 5939–16 FIGURE 10 FIGURE 11 TL F 5939 – 18 TL F 5939 – 17 FIGURE 12 TL F 5939 – 19 TL F 5939 – 20 FIGURE 13 FIGURE 14 5 CD4001BM CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series Gate Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4001BMJ CD4001BCJ CD40011BMJ or CD4011BCJ NS Package Number J14A Molded Dual-In-Line Package (N) Order Number CD4001BMN CD4001BCN CD4011BMN or CD4011BCN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications