LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
December 2003
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
General Description
These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II™ technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF353 is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and LM358 designs. These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The devices also exhibit low noise and offset voltage drift.
Features
n n n n n n n n n n n Internally trimmed offset voltage: Low input bias current: Low input noise voltage: Low input noise current: Wide gain bandwidth: High slew rate: Low supply current: High input impedance: Low total harmonic distortion : Low 1/f noise corner: Fast settling time to 0.01%: 10 mV 50pA 25 nV/√Hz 0.01 pA/√Hz 4 MHz 13 V/µs 3.6 mA 1012Ω ≤0.02% 50 Hz 2 µs
Typical Connection
Connection Diagram
Dual-In-Line Package
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Simplified Schematic
1/2 Dual
Top View Order Number LF353M, LF353MX or LF353N See NS Package Number M08A or N08E
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BI-FET II™ is a trademark of National Semiconductor Corporation.
© 2003 National Semiconductor Corporation
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LF353
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Power Dissipation Operating Temperature Range Tj(MAX) Differential Input Voltage Input Voltage Range (Note 3) Output Short Circuit Duration Storage Temperature Range Lead Temp. (Soldering, 10 sec.) Soldering Information Dual-In-Line Package Soldering (10 sec.)
Small Outline Package Vapor Phase (60 sec.) Infrared (15 sec.) 215˚C 220˚C
± 18V
(Note 2) 0˚C to +70˚C 150˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD Tolerance (Note 8) θJA M Package 1000V TBD
± 30V ± 15V
Continuous −65˚C to +150˚C 260˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.
260˚C
DC Electrical Characteristics
(Note 5) Symbol VOS ∆VOS/∆T IOS IB RIN AVOL Parameter Input Offset Voltage Average TC of Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Large Signal Voltage Gain Conditions MIn RS=10kΩ, TA=25˚C Over Temperature RS=10 kΩ Tj=25˚C, (Notes 5, 6) Tj≤70˚C Tj=25˚C, (Notes 5, 6) Tj≤70˚C Tj=25˚C VS= ± 15V, TA=25˚C VO= ± 10V, RL=2 kΩ Over Temperature VO VCM CMRR PSRR IS Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current RS≤ 10kΩ (Note 7) 70 70 VS= ± 15V, RL=10kΩ VS= ± 15V 15 V/mV 25 1012 100 50 10 25 100 4 200 8 LF353 Typ 5 Max 10 13 mV mV µV/˚C pA nA pA nA Ω V/mV Units
± 12 ± 11
± 13.5
+15 −12 100 100 3.6 6.5
V V V dB dB mA
AC Electrical Characteristics
(Note 5) Symbol Parameter Amplifier to Amplifier Coupling SR GBW en in Slew Rate Gain Bandwidth Product Equivalent Input Noise Voltage Equivalent Input Noise Current Conditions Min TA=25˚C, f=1 Hz−20 kHz (Input Referred) VS= ± 15V, TA=25˚C VS= ± 15V, TA=25˚C TA=25˚C, RS=100Ω, f=1000 Hz Tj=25˚C, f=1000 Hz 0.01 8.0 2.7 13 4 16 V/µs MHz LF353 Typ −120 Max dB Units
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LF353
AC Electrical Characteristics
(Note 5) Symbol THD Parameter Total Harmonic Distortion
(Continued) Conditions Min AV=+10, RL=10k, VO=20Vp−p, BW=20 Hz-20 kHz LF353 Typ Max % Units
< 0.02
Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package, and 158˚C/W typ junction to ambient for the H package. Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 4: The power dissipation limit, however, cannot be exceeded. Note 5: These specifications apply for VS= ± 15V and 0˚C≤TA≤+70˚C. VOS, IBand IOS are measured at VCM=0. Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS = ± 6V to ± 15V. Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
Input Bias Current Input Bias Current
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Supply Current
Positive Common-Mode Input Voltage Limit
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LF353
Typical Performance Characteristics
Negative Common-Mode Input Voltage Limit
(Continued) Positive Current Limit
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Negative Current Limit
Voltage Swing
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Output Voltage Swing
Gain Bandwidth
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LF353
Typical Performance Characteristics
Bode Plot
(Continued) Slew Rate
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Distortion vs. Frequency
Undistorted Output Voltage Swing
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Open Loop Frequency Response
Common-Mode Rejection Ratio
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LF353
Typical Performance Characteristics
Power Supply Rejection Ratio
(Continued) Equivalent Input Noise Voltage
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Open Loop Voltage Gain (V/V)
Output Impedance
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Inverter Settling Time
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LF353
Pulse Response
Small Signaling Inverting
Small Signal Non-Inverting
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Large Signal Non-Inverting Large Signal Inverting
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Current Limit (RL = 100Ω)
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Application Hints
These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II). These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large increase in input current. The maximum differential input voltage is independent of the
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supply voltages. However, neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit. Exceeding the negative common-mode limit on either input will force the output to a high state, potentially causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state. In neither case does a latch occur
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LF353
Application Hints
(Continued)
since raising the input back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode. Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if both inputs exceed the limit, the output of the amplifier will be forced to a high state. The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings to within 3V of the negative supply, an increase in input offset voltage may occur. Each amplifier is individually biased by a zener reference which allows normal circuit operation on ± 6V power supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate. The amplifiers will drive a 2 kΩ load resistance to ± 10V over the full temperature range of 0˚C to +70˚C. If the amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and negative swings. Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in polarity
or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit. As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in order to ensure stability. For example, resistors from the output to an input should be placed with the body close to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the capacitance from the input to ground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
Detailed Schematic
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LF353
Typical Applications
Three-Band Active Tone Control
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Note 1: All controls flat. Note 2: Bass and treble boost, mid flat. Note 3: Bass and treble cut, mid flat. Note 4: Mid boost, bass and treble flat. Note 5: Mid cut, bass and treble flat.
• •
All potentiometers are linear taper Use the LF347 Quad for stereo applications
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LF353
Typical Applications
(Continued) Improved CMRR Instrumentation Amplifier
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Fourth Order Low Pass Butterworth Filter
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LF353
Typical Applications
(Continued)
Fourth Order High Pass Butterworth Filter
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LF353
Typical Applications
(Continued) Ohms to Volts Converter
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LF353
Physical Dimensions
inches (millimeters) unless otherwise noted
Order Number LF353M or LF353MX NS Package Number M08A
Molded Dual-In-Line Package Order Number LF353N NS Package N08E
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LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
Notes
LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2.
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