LM136A-2.5/LM136-2.5QML Reference Diode
LM136A-2.5 LM136-2.5QML Reference Diode
General Description
The LM136A-2.5/LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2Ω dynamic impedance. A third terminal on the LM136-2.5 allows the reference voltage and temperature coefficient to be trimmed easily. The LM136-2.5 is useful as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 2.5V make it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136-2.5 operates as a shunt regulator, it can be used as either a positive or negative voltage reference.
September 1, 2009
Features
■ Available with radiation guarantee ■ ■ ■ ■ ■ ■
100 krad(Si) — Total Ionizing Dose Low temperature coefficient Wide operating current of 400 μA to 10 mA Guaranteed temperature stability Easily trimmed for minimum temperature drift Fast turn-on 3–lead transistor package
Ordering Information
NS Part Number LM136H-2.5/883 LM136AH-2.5-SMD LM136AH-2.5/883 LM136AH-2.5RQV (Note 5) LM136AH-2.5RLQV (Note 6) 5962R0050101VXA 100 krad(Si) 5962R0050102VXA 100 krad(Si) 8418003XA SMD Part Number NS Package Number H03H H03H H03H H03H H03H Package Description T0-46, 3LD Metal Can T0-46, 3LD Metal Can T0-46, 3LD Metal Can T0-46, 3LD Metal Can T0-46, 3LD Metal Can
Connection Diagram
TO-46 Metal Can Package
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Bottom View See NS Package Number H03H
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Schematic Diagram
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Typical Applications
2.5V Reference
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2.5V Reference with Minimum Temperature Coefficient
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†Adjust
to 2.490V *Any silicon signal diode
Wide Input Range Reference
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Absolute Maximum Ratings (Note 1)
Reverse Current Forward Current Storage Temperature Operating Temperature Range (Note 2) Maximum Junction Temperature (TJ) (Note 2) Lead Temperature (Soldering 10 seconds) Thermal Resistance θJA Still Air Flow 500LF/Min Air Flow θJC ESD Rating (Note 3) 15 mA 10 mA −60°C ≤ TA ≤ +150°C −55°C ≤ TA ≤ +125°C +150°C 300°C
354°C/W 77°C/W 46°C/W 1,000V
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A Subgroup 1 2 3 4 5 6 7 8A 8B 9 10 11 12 13 14 Description Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Settling time at Settling time at Settling time at Temp°C 25 125 -55 25 125 -55 25 125 -55 25 125 -55 25 125 -55
LM136-2.5 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified. Symbol IAdj Delta VZ VZ Parameter Adjust Current Delta Zener Voltage Zener Voltage IR = 1mA Notes Min -125 Max +125 6.0 10 VAdj = Open VAdj = 0.7V VAdj = 1.9V ZRD VStab Reverse Dynamic Impedance Temperature Stability VZ = Adjusted to 2.490V (Note 4) 2.44 2.42 2.39 2.29 2.49 2.54 2.56 2.49 2.49 2.69 1.0 18 Unit µA mV mV V V V V V Ω mV Subgroups 1, 2, 3 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1, 2, 3 2, 3 Conditions VAdj = 0.7V 0.4mA ≤ IZ ≤ 10 mA
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LM136A-2.5 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified. Symbol IAdj Delta VZ VZ Parameter Adjust Current Delta Zener Voltage Zener Voltage IR = 1mA Notes Min -125 Max +125 6.0 10 VAdj = Open VAdj = 0.7V VAdj = 1.9V ZRD VStab Reverse Dynamic Impedance Temperature Stability VZ = Adjusted to 2.490V (Note 4) (Note 4) 2.465 2.515 2.44 2.39 2.29 2.49 2.54 2.49 2.49 2.69 0.6 1.0 18 Unit µA mV mV V V V V V Ω Ω mV Subgroups 1, 2, 3 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1 2, 3 2, 3 Conditions VAdj = 0.7V 0.4mA ≤ IZ ≤ 10 mA
DC Drift Parameters
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Symbol VZ Parameter Zener Voltage Conditions VAdj = Open VAdj = 0.7V VAdj = 1.9V Notes Min −10 −10 −10 Max +10 +10 +10 Unit mV mV mV Subgroups 1 1 1
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/ θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 3: Human body model, 1.5KΩ in series with 100pF. Note 4: Parameter tested go-no-go only. Note 5: Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019. Note 6: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect.
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Typical Performance Characteristics
Reverse Voltage Change Zener Noise Voltage
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Dynamic Impedance
Response Time
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Reverse Characteristics
Forward Characteristics
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Temperature Drift
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FIGURE 1. LM136 With Pot for Adjustment of Breakdown Voltage (Trim Range = ±120 mV typical)
Application Hints
The LM136 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 1 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment potentiometer as shown in Figure 2. When the device is adjusted to 2.490V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1 is not critical and any value from 2k to 20k will work.
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FIGURE 2. Temperature Coefficient Adjustment (Trim Range = ±70 mV typical)
Low Cost 2 Amp Switching Regulator†
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*L1
60 turns #16 wire on Arnold Core A-254168-2 †Efficiency ≈ 80%
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Precision Power Regulator with Low Temperature Coefficient
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5V Crowbar
Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage
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*Does
not affect temperature coefficient
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Adjustable Shunt Regulator
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Linear Ohmmeter
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Op Amp with Output Clamped
Bipolar Output Reference
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2.5V Square Wave Calibrator
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5V Buffered Reference
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Low Noise Buffered Reference
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Revision History
Date Released 07/06/07 Revision A Section New Release, Corporate format Originator L. Lytle Changes 2 MDS datasheets converted into one corporate datasheet format. MNLM136–2.5–X Rev 0A0 and MNLM136A-2.5–X-RH. The ELDRS Part has also been added. Rev. 0E0 will be archived.
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Physical Dimensions inches (millimeters) unless otherwise noted
NS Package Number H03H
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Notes
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