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LM1596

LM1596

  • 厂商:

    NSC

  • 封装:

  • 描述:

    LM1596 - Balanced Modulator-Demodulator - National Semiconductor

  • 数据手册
  • 价格&库存
LM1596 数据手册
LM1596 LM1496 Balanced Modulator-Demodulator February 1995 LM1596 LM1496 Balanced Modulator-Demodulator General Description The LM1596 LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to the product of an input (signal) voltage and a switching (carrier) signal Typical applications include suppressed carrier modulation amplitude modulation synchronous detection FM or PM detection broadband frequency doubling and chopping The LM1596 is specified for operation over the b55 C to a 125 C military temperature range The LM1496 is specified for operation over the 0 C to a 70 C temperature range Features Y Y Y Y Y Excellent carrier suppression 65 dB typical at 0 5 MHz 50 dB typical at 10 MHz Adjustable gain and signal handling Fully balanced inputs and outputs Low offset and drift Wide frequency response up to 100 MHz Schematic and Connection Diagrams Metal Can Package TL H 7887 – 2 Top View Note Pin 10 is connected electrically to the case through the device substrate Order Number LM1496H or LM1596H See NS Package Number H08C TL H 7887 – 1 Dual-In-Line and Small Outline Packages Numbers in parentheses show DIP connections TL H 7887 – 3 Order Number LM1496M or LM1496N See NS Package Number M14A or N14A C1995 National Semiconductor Corporation TL H 7887 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Internal Power Dissipation (Note 1) Applied Voltage (Note 2) Differential Input Signal (V7 b V8) 500 mW 30V g 5 0V Soldering Information  Dual-In-Line Package Soldering (10 seconds) 260 C  Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and their effects on Product Reliability’’ for other methods of soldering surface mount devices g (5 a I5R0)V Differential Input Signal (V4 b V1) 5 0V Input Signal (V2 b V1 V3 b V4) 12 mA Bias Current (I5) Operating Temperature Range LM1596 b55 C to a 125 C LM1496 0 C to a 70 C Storage Temperature Range b 65 C to a 150 C Electrical Characteristics (TA e 25 C Parameter Carrier Feedthrough unless otherwise specified see test circuit) LM1596 LM1496 Units mVrms mVrms 02 150 mVrms mVrms dB dB MHz Conditions VC e 60 mVrms sine wave fC e 1 0 kHz offset adjusted VC e 60 mVrms sine wave fC e 10 kHz offset adjusted VC e 300 mVpp square wave fC e 1 0 kHz offset adjusted VC e 300 mVpp square wave fC e 1 0 kHz not offset adjusted fS e 10 kHz 300 mVrms fC e 500 kHz 60 mVrms sine wave offset adjusted fS e 10 kHz 300 mVrms fC e 10 MHz 60 mVrms sine wave offset adjusted RL e 50X Carrier Input Port VC e 60 mVrms sine wave fS e 1 0 kHz 300 mVrms sine wave Signal Input Port VS e 300 mVrms sine wave V7 b V8 e 0 5Vdc VS e 100 mVrms f e 1 0 kHz V7 b V8 e 0 5 Vdc f e 5 0 MHz V7 b V8 e 0 5 Vdc f e 5 0 MHz V7 b V8 e 0 5 Vdc f e 10 MHz (I1 a I4) 2 (I7 a I8) 2 (I1 b I4) (I7 b I8) (b55 C k TA k a 125 C) (0 C k TA k a 70 C) (I6 b I9) (b55 C k TA k a 125 C) (0 C k TA k a 70 C) 25 50 Min Typ Max Min Typ Max 40 140 0 04 20 65 50 300 02 100 50 40 140 0 04 20 65 50 300 Carrier Suppression Transadmittance Bandwidth 80 80 MHz Voltage Gain Signal Channel Input Resistance Signal Port Input Capacitance Signal Port 35 200 20 40 50 12 12 07 07 20 25 25 50 50 25 35 200 20 40 50 12 12 07 50 20 30 30 50 50 VV kX pF kX pF mA mA mA mA nA C nA C 60 mA nA C nA C Single Ended Output Resistance f e 10 MHz Single Ended Output Capacitance Input Bias Current Input Bias Current Input Offset Current Input Offset Current Average Temperature Coefficient of Input Offset Current Output Offset Current Average Temperature Coefficient of Output Offset Current 14 90 50 14 90 2 Electrical Characteristics (TA e 25 C Parameter Signal Port Common Mode Input Voltage Range Signal Port Common Mode Rejection Ratio Common Mode Quiescent Output Voltage Differential Output Swing Capability Positive Supply Current Negative Supply Current Power Dissipation (I6 a Ig) (I10) Conditions unless otherwise specified see test circuit) (Continued) LM1596 Min Typ 50 b 85 LM1496 Max Min Typ 50 b 85 Units Max Vp-p dB Vdc Vp-p 30 40 mA mA mW fS e 1 0 kHz V7 b V8 e 0 5 Vdc 80 80 20 30 33 30 40 80 80 20 30 33 Note 1 LM1596 rating applies to case temperatures to a 125 C derate linearly at 6 5 mW C for ambient temperature above 75 C LM1496 rating applies to case temperatures to a 70 C Note 2 Voltage applied between pins 6-7 8-1 9-7 9-8 7-4 7-1 8-4 6-8 2-5 3-5 Note 3 Refer to rets1596x drawing for specifications of military LM1596H versions Typical Performance Characteristics Carrier Suppression vs Carrier Input Level Carrier Suppression vs Frequency Carrier Feedthrough vs Frequency Sideband Output vs Carrier Levels Sideband and Signal Port Transadmittances vs Frequency Signal-Port Frequency Response TL H 7887 – 5 3 Typical Application and Test Circuit Suppressed Carrier Modulator Numbers in parentheses show DIP connections Note S1 is closed for ‘‘adjusted’’ measurements TL H 7887 – 4 SSB Product Detector Numbers in parentheses show DIP connections TL H 7887 – 6 This figure shows the LM1596 used as a single sideband (SSB) suppressed carrier demodulator (product detector) The carrier signal is applied to the carrier input port with sufficient amplitude for switching operation A carrier input level of 300 mVrms is optimum The composite SSB signal is applied to the signal input port with an amplitude of 5 0 to 500 mVrms All output signal components except the desired demodulated audio are filtered out so that an offset adjustment is not required This circuit may also be used as an AM detector by applying composite and carrier signals in the same manner as described for product detector operation 4 Typical Applications (Continued) Broadband Frequency Doubler Numbers in parentheses show DIP connections TL H 7887 – 7 The frequency doubler circuit shown will double low-level signals with low distortion The value of C should be chosen for low reactance at the operating frequency Signal level at the carrier input must be less than 25 mV peak to maintain operation in the linear region of the switching differential amplifier Levels to 50 mV peak may be used with some distortion of the output waveform If a larger input signal is available a resistive divider may be used at the carrier input with full signal applied to the signal input 5 6 Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM1496H or LM1596H NS Package Number H08C Molded Small Outline Package (M) Order Number LM1496M NS Package Number M14A 7 LM1596 LM1496 Balanced Modulator-Demodulator Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM1496N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications
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