LM313

LM113 LM313 Reference Diode December 1994 LM113 LM313 Reference Diode General Description The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability The diodes are synthesized using transistors and resistors in a monolithic integrated circuit As such they have the same low noise and long term stability as modern IC op amps Further output voltage of the reference depends only on highly-predictable properties of components in the IC so they can be manufactured and supplied to tight tolerances Dynamic impedance of 0 3X from 500 mA to 20 mA Temperature stability typically 1% overb55 C to 125 C range (LM113) 0 C to 70 C (LM313) Y Tight tolerance g 5% g 2% or g 1% The characteristics of this reference recommend it for use in bias-regulation circuitry in low-voltage power supplies or in battery powered equipment The fact that the breakdown voltage is equal to a physical property of silicon the energy-band gap voltage makes it useful for many temperature-compensation and temperature-measurement functions Y Y Features Y Low breakdown voltage 1 220V Schematic and Connection Diagrams Metal Can Package Order Number LM113H LM113H 883 LM113-1H LM113-1H 883 LM113-2H LM113-2H 883 or LM313H See NS Package Number H02A TL H 5713 – 1 Typical Applications Low Voltage Regulator Level Detector for Photodiode Solid tantalum TL H 5713 – 2 C1995 National Semiconductor Corporation TL H 5713 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 3) Power Dissipation (Note 1) 100 mW Reverse Current 50 mA Forward Current 50 mA Storage Temperature Range Lead Temperature (Soldering 10 seconds) Operating Temperature Range LM113 LM313 b 65 C to a 150 C 300 C b 55 C to a 125 C 0 C to a 70 C Electrical Characteristics (Note 2) Parameter Reverse Breakdown Voltage LM113 LM313 LM113-1 LM113-2 Reverse Breakdown Voltage Change Reverse Dynamic Impedance Forward Voltage Drop RMS Noise Voltage Reverse Breakdown Voltage Change with Current Breakdown Voltage Temperature Coefficient Conditions Min 1 160 1 210 1 195 Typ 1 220 1 22 1 22 60 02 0 25 0 67 5 15 0 01 Max 1 280 1 232 1 245 15 10 08 10 Units V V V mV X X V mV mV %C IR e 1 mA 0 5 mA s IR s 20 mA IR e 1 mA IR e 10 mA IF e 1 0 mA 10 Hz s f s 10 kHz IR e 1 mA 0 5 mA s IR s 10 mA TMIN s TA s TMAX 1 0 mA s IR s 10 mA TMIN s TA s TMAX Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C W junction to case or 440 C W junction to ambient Note 2 These specifications apply for TA e 25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 0 1 mF unless isolated by at least a 100X resistor as it may oscillate at some currents Note 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113 Typical Performance Characteristics Temperature Drift Reverse Dynamic Impedance Reverse Characteristics TL H 5713 – 3 2 Typical Performance Characteristics (Continued) Reverse Characteristics Reverse Dynamic Impedance Noise Voltage Forward Characteristics Response Time Maximum Shunt Capacitance TL H 5713 – 4 Typical Applications (Continued) Amplifier Biasing for Constant Gain with Temperature Constant Current Source Thermometer Adjust for 0V at 0 C Adjust for 100 mV C TL H 5713 – 5 3 LM113 LM313 Reference Diode Physical Dimensions inches (millimeters) Order Number LM113H LM113H 883 LM113-1H LM113-1H 883 LM113-2H LM113-2H 883 or LM313H NS Package Number H02A LIFE SUPPORT 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