LM3146M

LM3146 High Voltage Transistor Array February 1995 LM3146 High Voltage Transistor Array General Description The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the dc through VHF range They may be used as discrete transistors in conventional circuits however in addition they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching The LM3146 is supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range Features Y Y Y Y Y High voltage matched pairs of transistors VBE matched g 5 mV input offset current 2 mA max at IC e 1 mA Five general purpose monolithic transistors Operation from dc to 120 MHz Wide operating current range Low noise figure 3 2 dB typ at 1 kHz Applications Y Y Y General use in all types of signal processing systems operating anywhere in the frequency range from dc to VHF Custom designed differential amplifiers Temperature compensated amplifiers Connection Diagram Dual-In-Line and Small Outline Packages TL H 7959 – 1 Top View Order Number LM3146M or LM3146N See NS Package Number M14A or N14A C1995 National Semiconductor Corporation TL H 7959 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM3146 Units Power Dissipation Each transistor TA e 25 C to 55 C 300 mW TA l 55 C Derate at 6 67 mW C Power Dissipation Total Package TA e 25 C 500 mW TA l 25 C Derate at 6 67 mW C Collector to Emitter Voltage VCEO 30 V 40 V Collector to Base Voltage VCBO Collector to Substrate Voltage VCIO (Note 1) 40 V Emitter to Base Voltage VEBO (Note 2) 5 V Collector to Current IC 50 mA b 40 to a 85 C Operating Temperature Range b 65 to a 150 Storage Temperature Range C Soldering Information Dual-In-Line Package Soldering (10 seconds) Small Outline Package Vapor Phase (60 seconds) Infrared (15 seconds) 260 C 215 C 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices DC Electrical Characteristics TA e 25 C Symbol V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO hFE Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Substrate Breakdown Voltage Emitter to Base Breakdown Voltage (Note 2) Collector Cutoff Current Collector Cutoff Current Static Forward Current Transfer Ratio (Static Beta) Input Offset Current for Matched Pair Q1 and Q2 Base to Emitter Voltage Magnitude of Input Offset Voltage for Differential Pair Temperature Coefficient of Base to Emitter Voltage Collector to Emitter Saturation Voltage Temperature Coefficient of Input Offset Voltage Conditions Min IC e 10 mA IE e 0 IC e 1 mA IB e 0 ICI e 10 mA IB e 0 IE e 0 IC e 0 IE e 10 mA VCB e 10V IE e 0 VCE e 10V IB e 0 IC e 10 mA VCE e 5V IC e 1 mA VCE e 5V IC e 10 mA VCE e 5V IC1 e 1C2 e 1 mA VCE e 5V IC e 1 mA VCE e 3V VCE e 5V IE e 1 mA VCE e 5V IE e 1 mA IC e 10 mA IB e 1 mA IC e 1 mA VCE e 5V 0 63 30 40 30 40 5 Limits Typ 72 56 72 7 0 002 (Note 3) 85 100 90 03 0 73 0 48 b1 9 Units Max V V V V 100 5 nA mA IB1 – IB2 VBE VBE1 – VBE2 DVBE DT VCE(SAT) DV10 DT 2 0 83 5 mA V mV mV C V mV C 0 33 11 Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur Note 3 See curve 2 AC Electrical Characteristics Symbol NF fT CEB CCB CCI Parameter Low Frequency Noise Figure Gain Bandwidth Product Emitter to Base Capacitance Collector to Base Capacitance Collector to Substrate Capacitance Conditions Min f e 1 kHz VCE e 5V IC e 100 mA RS e 1 kX VCE e 5V IC e 3 mA VEB e 5V IE e 0 VCB e 5V IC e 0 VCI e 5V IC e 0 300 Limits Typ 3 25 500 0 70 0 37 22 Max dB MHz pF pF pF Units Low Frequency Small Signal Equivalent Circuit Characteristics hfe hie hoe hre Forward Current Transfer Ratio Short Circuit Input Impedance Open Circuit Output Impedance Open Circuit Reverse Voltage Transfer Ratio f e 1 kHz VCE e 3V IC e 1 mA f e 1 kHz VCE e 3V IC e 1 mA f e 1 kHz VCE e 3V IC e 1 mA f e 1 kHz VCE e 3V IC e 1 mA 100 35 15 6 1 8 x 10b4 kX mmho Admittance Characteristics Yfe Yie Yoe Yre Forward Transfer Admittance Input Admittance Output Admittance Reverse Transfer Admittance f e 1 MHz VCE e 3V IC e 1 mA f e 1 MHz VCE e 3V IC e 1 mA f e 1 MHz VCE e 3V IC e 1 mA f e 1 MHz VCE e 3V IC e 1 mA 31 b j 1 5 0 3 a j 0 04 0 001 a j 0 03 (Note 3) mmho mmho mmho mmho Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur Note 3 See curve 3 Typical Performance Characteristics ICEO vs TA for Any Transistor ICBO vs TA for Any Transistor hFE vs IC for Any Transistor VBE vs TA for Any Transistor VCE(SAT) vs IC for Any Transistor IIO vs IC (Q1 and Q2) VIO vs TA for Q1 and Q2 VBE and VIO vs IE for Q1 and Q2 NF vs IC RS e 500X TL H 7959 – 2 4 Typical Performance Characteristics NF vs IC RS e 1 k X (Continued) hfe hie hoe hre vs IC NF vs IC e RS e 10 kX Yfe vs f Yie vs f Yoe vs f Yre vs f fT vs IC CEB CCB CCI vs Bias Voltage TL H 7959 – 3 5 LM3146 High Voltage Transistor Array Physical Dimensions inches (millimeters) SO Package (M) Order Number LM3146M NS Package Number M14A Molded Dual-In-Line Package (N) Order Number LM3146N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with 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