LM3421 SEPIC LED Driver Evaluation Board for Automotive Applications
LM3421 SEPIC LED Driver Evaluation Board for Automotive Applications
Introduction
This application note describes an evaluation board consisting of the LM3421 controller configured as a SEPIC constant current LED driver. It is capable of converting input voltages from 8V to 18V and illuminating up to six LEDs with approximately 350mA of drive current. Additional features include analog and pulse-width modulated (PWM) dimming, over-voltage protection, under-voltage lockout and cycle-by-cycle current limit. A bill of materials is included that describes the parts used in this evaluation board. A schematic and layout have also been included along with measured performance characteristics.
National Semiconductor Application Note 2009 Steve Solanyk February 4, 2011
Key Features
• • • • • • • Designed to CISPR-25, Class 3 limits 0 to 10V analog dimming function PWM dimming function Input under-voltage protection Over-voltage protection Cycle-by-cycle current limit NoPB and RoHS compliant bill of materials
Applications
• • • Emergency lighting modules LED light-bars, beacons and strobe lights Automotive tail-light modules
Performance Specifications
Based on an LED Vf = 3.15V Symbol VIN VIN(MAX) VOUT ILED fSW ILIMIT VUVLO VUVLO(HYS) VOVP VOVP(HYS) Parameter Operating Input Supply Voltage Input Supply Voltage Surge Voltage LED String Voltage LED String Average Current Efficiency (VIN=12V, ILED=345mA, 6 LEDs) Switching Frequency LED Current Regulation Current Limit Input Undervoltage Lock-out Threshold (VIN Rising) Input Undervoltage Lock-out Hysteresis Output Over-Voltage Protection Threshold Output Over-Voltage Protection Hysteresis Demo Board Min 8 Typ 12 50 V 18.9V (6 LEDs) 345 mA 85.4% 132 kHz < 1% Variation 2.5 A 7.2V 1V 37 V 3.5 V Max 18 -
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© 2011 National Semiconductor Corporation
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General Information
This evaluation board uses the LM3421 controller configured as a SEPIC converter for use in automotive based LED lighting modules. The described circuit can also be used as a general starting point for designs requiring robust performance in EMI sensitive environments.(Note 1) The design is based on the LM3421 controller integrated circuit (IC). Inherent to the LM3421 design is an adjustable highside current sense voltage which allows for tight regulation of the LED current with the highest efficiency possible. Additional features include analog dimming, over-voltage protection, under-voltage lock-out and cycle-by-cycle current limit. The operating input voltage range is from 8V to 18V. The design however is able to withstand input voltages up to 50V to account for power surges and load dump situations. (Note 2) Up to six LEDs can be powered with approximately 350mA of
current which is sufficient to drive a variety of available high brightness (HB) LEDs on the market. In order to comply with EMI requirements for automotive applications, an input filter and snubber components have also been designed into the circuit. This minimizes the time needed to optimize the design for specific EMI qualifications pertaining to individual automobile manufacturers and ensures faster product time to market. The demo board consists of a 1.6” x 2.4” four-layer PCB board. Test terminals in the form of turrets are available to connect the input power supply and an LED string as well as apply an analog or PWM dimming signal.
Note 1: Although this evaluation board can be used as a reference design for automotive applications, it is up to the user to verify and qualify that the final design and BOM meets any AECQ-100 requirements. Note 2: Analog dimming circuit must not be connected when applying surge voltages greater than 21V.
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Demo Board Schematic
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Bill of Materials
Designator C4 C5 C6 C7 C8 C10 C11 C12 C13 C14 C15 C16 C20 C21 C22 C23 C24 C25 C26 C27 C28 D6 D10 D12 J1 J2 J3 J4 L1 L2 L3 Q1 Q2 Q3 R1 R2 R5 R6 R7 R8 R9
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Value 1.0 µF 10 µF 10 µF 0.10 µF 4.7 µF 0.10 µF 0.22 µF 1000 pF 2.2 µF 47 pF 0.1 µF 1.0 µF 1.0 uF 68 µF 0.01 µF 4.7 µF 1000 pF 1.2 nF 0.10 µF 2.7 nF 100 µH 10 µH 40.2 kΩ 40.2 kΩ 174 kΩ 1.0 kΩ 1.0 kΩ 0.2 Ω 10 Ω
Package 1206 2220 2220 805 2220 805 805 805 805 805 805 805 805 Radial Can - SMD 805 2220 805 1206 805 1206 SOD-123 SOD-123 SOD-123 Through hole Through hole Through hole Through hole SMD 1206 SMD DPAK SOT-23 SOT-23 805 805 805 805 805 2010 805
Description Ceramic, C Series, 100V, 20% DNP CAP, CERM, 50V, +/-10%, X7R CAP, CERM, 50V, +/-10%, X7R Ceramic, X7R, 100V, 10% Ceramic, X7R, 100V, 10% Ceramic, X7R, 50V, 10% Ceramic, X7R, 50V, 10% Ceramic, C0G/NP0, 50V, 1% Ceramic, X5R, 16V, 10% Ceramic, C0G/NP0, 50V, 5% Ceramic, X7R, 25V, 10% Ceramic, X7R, 25V, 10% Ceramic, X5R, 25V, 10% CAP ELECT 68UF 63V FK CAP, CERM, 100V, +/-10%, X7R CAP, CERM, 100V, +/-10%, X7R CAP, CERM, 100V, +/-10%, X7R CAP, CERM, 100V, +/-20%, X7R Ceramic, X7R, 25V, 10% CAP, CERM, 100V, +/-20%, X7R Diode Schottky, 60V, 1A Vr = 100V, Io = 0.15A, Vf = 1.25V SMT Zener Diode Header, 100mil, 1x2, Gold plated, 230 mil above insulator Header, 100mil, 1x2, Gold plated, 230 mil above insulator Header, 100mil, 1x2, Gold plated, 230 mil above insulator Header, 100mil, 1x2, Gold plated, 230 mil above insulator Coupled inductor 6A Ferrite Bead, 160 Ohm @ 100MHz Inductor, Shielded Drum Core, Ferrite, 2.1A, 0.038Ω MOSFET N-CH 100V 6.2A MOSFET, N-CH, 30V, 4.5A MOSFET, N-CH, 60V, 0.24A 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.5W 1%, 0.125W
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Manufacturer TDK TDK TDK TDK MuRata Yageo America TDK AVX AVX MuRata MuRata MuRata MuRata Panasonic TDK TDK TDK AVX TDK AVX Rohm Diodes Inc. Diodes Inc. Samtec Inc. Samtec Inc. Samtec Inc. Samtec Inc. Coilcraft Steward Coilcraft Fairchild Semiconductor Vishay-Siliconix Vishay-Siliconix Vishay-Dale Vishay-Dale Panasonic Vishay-Dale Vishay-Dale Vishay-Dale Yageo America
Part Number C3216X7R2A105M C5750X7R1H106K C5750X7R1H106K C2012X7R2A104K GRM55ER72A475KA01L CC0805KRX7R9BB104 C2012X7R1H224K 08055A102FAT2A 0805YD225KAT2A GQM2195C1H470JB01D GRM21BR71E104KA01L GRM216R61E105KA12D GRM216R61E105KA12D EEE-FK1J680UP C2012X7R2A103K C5750X7R2A475K C2012X7R2A102K 12061A122JAT2A C2012X7R1E104K 12065C272KAT2A RB160M-60TR 1N4148W-7-F MMSZ5231B-7-F TSW-102-07-G-S TSW-102-07-G-S TSW-102-07-G-S TSW-102-07-G-S MSD1278-104ML HI1206T161R-10 MSS7341-103MLB FDD3860 SI2316BDS-T1-E3 2N7002E-T1-E3 CRCW080540K2FKEA CRCW080540K2FKEA ERJ-6ENF1743V CRCW08051k00FKEA CRCW08051k00FKEA WSL2010R3000FEA RC0805FR-0710RL
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Designator R10 R11 R13 R14 R15 R16 R18 R19 R20 R21 R25 R26 R27 R28 R29 R30 R31 R32 R33 R34 R35 TP1 - TP8 U1 U3
Value 21.5 kΩ 100 Ω 174 kΩ 4.32 kΩ 6.04 kΩ 0.10 Ω 60.4 kΩ 40.2 kΩ 40.2 kΩ 22.1 kΩ 40.2 kΩ 11.8 kΩ 0Ω 10.0 Ω 590 Ω 10 Ω 2.2 Ω 0Ω 4.99 kΩ 10.0 kΩ 590 Ω -
Package 805 805 805 805 805 2512 805 805 805 805 805 805 1206 1206 1210 805 1206 1206 805 805 1210 Through Hole
Description 1%, 0.125W 5%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 1W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.125W 1%, 0.25W 1%, 0.25W 1%, 0.5W 1%, 0.125W 1%, 0.25W 5%, 0.25W 0.1%, 0.125W 1%, 0.125W 1%, 0.5W Terminal, Turret, TH, Double
Manufacturer Vishay-Dale Vishay-Dale Panasonic Vishay-Dale Panasonic Vishay-Dale Vishay-Dale Vishay-Dale Vishay-Dale Vishay-Dale Vishay-Dale Vishay-Dale Yageo America Vishay-Dale Vishay/Dale Vishay-Dale Vishay-Dale Yageo America Yageo America Vishay-Dale Vishay/Dale Keystone Electronics National Semiconductor
Part Number CRCW080521K5FKEA CRCW0805100RJNEA ERJ-6ENF1743V CRCW08054K32FKEA ERJ-6ENF6041V WSL2512R1000FEA CRCW080560K4FKEA CRCW080540K2FKEA CRCW080540K2FKEA CRCW080522K1FKEA CRCW080540K2FKEA CRCW080511K8FKEA RC1206JR-070RL CRCW120610R0FKEA CRCW1210590RFEA CRCW080510R0FKEA CRCW12062R20FKEA RC1206JR-070RL RT0805BRD074K99L CRCW080510K0FKEA CRCW1210590RFEA 1573-2 LM3421MH LMH6601MG
TSSOP-16 N-Channel Controller for Constant EP Current LED Drivers SC70-6
2.4V R-R Out CMOS Video OpAmp National with Shutdown Semiconductor
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LM3421 Device Pin-Out
Top View
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Pin Description 16-Lead TSSOP EP
Pin # 1 2 3 4 5 6 7 8
Name VIN EN COMP CSH RCT AGND OVP nDIM
Description Bypass with 100 nF capacitor to AGND as close to the device as possible in the circuit board layout. Connect to AGND for zero current shutdown or apply > 2.4V to enable device. Connect a capacitor to AGND to set the compensation. Connect a resistor to AGND to set the signal current. For analog dimming, connect a controlled current source or a potentiometer to AGND as detailed in the Analog Dimming section. External RC network sets the predictive “off-time” and thus the switching frequency. Connect to PGND through the DAP copper pad to provide ground return for CSH, COMP, RCT, and TIMR. Connect to a resistor divider from VO to program output over-voltage lockout (OVLO). Turn-off threshold is 1.24V and hysteresis for turn-on is provided by 23 µA current source. Connect a PWM signal for dimming as detailed in the PWM Dimming section and/or a resistor divider from VIN to program input under-voltage lockout (UVLO). Turn-on threshold is 1.24V and hysteresis for turn-off is provided by 23 µA current source. Connect to the gate of the dimming MosFET. Connect to AGND through the DAP copper pad to provide ground return for GATE and DDRV. Connect to the gate of the main switching MosFET. Bypass with 2.2 µF–3.3 µF ceramic capacitor to PGND. Connect to the drain of the main N-channel MosFET switch for RDS-ON sensing or to a sense resistor installed in the source of the same device. Connect the low side of all external resistor dividers (VIN UVLO, OVP) to implement “zero-current” shutdown. Connect through a series resistor to the positive side of the LED current sense resistor. Connect through a series resistor to the negative side of the LED current sense resistor. Star ground connecting AGND and PGND.
9 10 11 12 13 14 15 16 EP (17)
DDRV PGND GATE VCC IS RPD HSP HSN EP
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Evaluation Board Connection Overview
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Wiring and Jumper Connection Diagram
Name VIN PGND DIM
I/O Input Input Input
Description Power supply voltage. Ground. PWM Dimming Input Apply a pulse-width modulated dimming voltage signal with varying duty cycle. Maximum dimming voltage level is 20V. Maximum dimming frequency is 1kHz. PWM dimming ground. 0 - 10V Dimming Input Apply a 0 - 10V analog dimming voltage signal. See "Theory of Operation" section for more details. Analog dimming ground. LED Constant Current Supply Supplies voltage and constant-current to anode of LED array. LED Return Connection (not GND) Connects to cathode of LED array. Do NOT connect to GND.
DIM_GND ADIM ADIM_GND LED+ LED-
Input Input Input Output Output
Evaluation Board Modes of Operation Overview
The available modes of operation for this evaluation board are enabled utilizing the jumper configurations described in the following table. J1 OPEN J2 OPEN J3 J4 OPEN Mode of Operation LM3421 is disabled and placed into low-power shutdown. LM3421 is enabled and powered on. The evaluation board will now run under standard operation. LM3421 is enabled and powered on. The PWM dimming function is now enabled.
CLOSED CLOSED
CLOSED CLOSED CLOSED CLOSED LM3421 is enabled and powered on. The analog dimming function is now enabled. OPEN CLOSED OPEN OPEN
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Typical Performance Characteristics
TA = 25°C and LED Vf = 3.15V unless otherwise specified. Efficiency vs. Input Voltage fSW = 132kHz, ILED = 345mA Efficiency vs. Switching Frequency VIN = 12V, ILED = 345mA
100 95 EFFICIENCY (%) EFFICIENCY (%) 90 85 80 75 70 65 60 6 8 10 12 14 VIN (V) 16 18 20
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100 95 6 LEDs 90 85 80 75 70 65 60 50 100 150 200 250 SWITCHING FREQUENCY (kHz) 300
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6 LEDs
2 LEDs
4 LEDs
4 LEDs 2 LEDs
Efficiency vs. Input Voltage fSW = 132kHz, 6 LEDs, VOUT = 18.8V
LED Current vs. Input Voltage fSW = 132kHz, 6 LEDs, VOUT = 18.8V
100 95 EFFICIENCY (%) 90 85 80 75 70 65 60 6 8 10 12 14 VIN (V) 16 18 20
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400 ILED=345mA ILED (mA) 350 300 250 200 150 100 50 0 6 8 10 12 14 VIN (V) 16 18 20
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RSNS=0.3Ω
ILED=207mA ILED=104mA
RSNS=0.5Ω
RSNS=1.0Ω
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Analog Dimming VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
PWM Dimming VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
350 300 250 ILED (mA) 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 ILED (mA)
350 300 250 200 150 100 50 0 0 20 40 fDIM = 1 kHz fDIM = 100 Hz
60
80
100
ADIM VOLTAGE (V)
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DUTY CYCLE (%)
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Steady-state Waveforms Top Plot: VSW, Bottom Plot: ILED (VIN =12V, ILED = 342mA, 6 LEDs, VOUT = 20.4V)
Start-up Waveforms Top Plot: VSW, Bottom Plot: ILED (VIN =12V, ILED = 342mA, 6 LEDs, VOUT = 20.4V)
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Shutdown Waveforms Top Plot: VSW, Bottom Plot: ILED (VIN =12V, ILED = 342mA, 6 LEDs, VOUT = 20.4V)
Over-voltage Protection Response Top Plot: VSW, Middle Plot: VOUT, Bottom Plot: ILED (VIN =12V, ILED = 342mA, 6 LEDs, VOUT = 20.4V)
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100Hz, 50% Duty Cycle PWM Dimming Top Plot: VSW, Middle Plot: VDIM, Bottom Plot: ILED VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
100Hz, 50% Duty Cycle PWM Dimming (rising edge) Top Plot: VSW, Middle Plot: VDIM, Bottom Plot: ILED VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
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1 kHz, 50% Duty Cycle PWM Dimming Top Plot: VSW, Middle Plot: VDIM, Bottom Plot: ILED VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
1 kHz, 50% Duty Cycle PWM Dimming (rising edge) Top Plot: VSW, Middle Plot: VDIM, Bottom Plot: ILED VIN = 12V, fSW = 132kHz, 6 LEDs, VOUT = 20.4V
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PCB Layout
Top Layer
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Mid-Layer 1
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Mid-Layer 2
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Bottom Layer
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Theory of Operation
INPUT EMI LINE FILTER
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FIGURE 1. Input filter circuit A low-pass input filter (highlighted in Figure 1) has been added to the front-end of the circuit. Its primary purpose is to minimize EMI conducted from the LM3421 circuit to prevent it from interfering with the electrical network supplying power to the LED driver. Frequencies in and around the LED driver switching frequency (i.e. fSW = 132 kHz) are primarily addressed with this filter. The ferrite bead, L2, has been chosen to help attenuate EMI frequencies above 10MHz in conjunction with snubber circuitry that has been designed into the driver circuitry which will be discussed in the next section. This low pass filter has a cut-off frequency that is determined by the inductor and capacitor resonance of L3 and C22 as described in the following equation, The input filter needs to attenuate the fundamental frequency and associated harmonics of the demo board’s switching frequency which is designed to be 132kHz. Plugging the chosen values of L3 and C22 as 10µH and 68uF respectively gives a roll-off frequency of 6.1kHz. The ferrite bead chosen has a nominal impedance of 160 Ohm at 100Mhz for 1A of current and will help attenuate higher frequency noise. Conducted EMI scans of an earlier prototype evaluation board with and without an input filter are shown in Figure 2 and Figure 3. (NOTE: These scans were originally done per CISPR-22, however for the purpose of evaluating filter performance this EMI data is acceptable. The actual EMI performance for this evaluation board will be discussed later in this document.). Frequencies from 300kHz to 10 MHz show noticeable attenuation of peak frequencies with the input filter in place. Harmonics of the driver switching frequency are reduced up to 22dBµV/m.
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FIGURE 2. Conducted EMI scan (peak) WITHOUT input filter and with snubber circuitry
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FIGURE 3. Conducted EMI scan (peak) WITH input filter and with snubber circuitry SNUBBER CIRCUITRY
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FIGURE 4. Snubber circuitry Snubber circuitry (highlighted in Figure 4 has been added around the switching elements of Q1 and D6 in the form of series resistor-capacitor (RC) pairs. The purpose of these snubbers is to reduce the rising/falling edge rate of the switching voltage waveform when Q1 and D6 transition from an “on” to “off” state and vice versa. This helps reduce both conducted and radiated EMI in the higher test frequency ranges. For lower EMI frequencies particularly during conducted EMI testing, the input filter is utilized as the primary EMI attenuator as previously discussed. Conducted EMI scans of an earlier prototype evaluation board with and without snubber circuitry are shown in Figure 5 and Figure 6. (NOTE: These scans were originally done per CISPR-22, however for the purpose of evaluating filter performance this EMI data is acceptable. The actual EMI performance for this evaluation board will be discussed later in this document.). From 10 MHz to 30 MHz, the snubbers reduce peak power for all frequencies with noticeable attenuation of peak power between 20 MHz and 30 MHz.
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FIGURE 5. Conducted EMI scan (peak) with input filter and WITHOUT snubber circuitry
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FIGURE 6. Conducted EMI scan (peak) with input filter and WITH snubber circuitry Radiated EMI scans of the demo board with and without the snubber circuitry are shown in Figure 7 and Figure 8. From 30 MHz to near 200 MHz, the snubbers reduce peak power with attenuation values ranging from 5 to 10dBµV/m.
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FIGURE 7. Radiated EMI scan (peak) with input filter and WITHOUT snubber circuitry
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FIGURE 8. Radiated EMI scan (peak) with input filter and WITH snubber circuitry Although the snubber circuits help reduce the EMI signature of the evaluation board, they do so at the cost of lowering the maximum achievable driver efficiency. Since each board design and application is unique, it is recommended that the user investigate different snubber configurations and values to provide the optimal balance of EMI performance and system efficiency. ANALOG DIMMING The analog dimming circuitry is highlighted in Figure 9. Closing jumpers J1 and J4 connects the analog dimming circuitry to the LED driver and thus enables this feature. Analog dimming of the LED current is performed by adjusting the CSH pin current (ICSH) from the LM3421. The relationship between ICSH and the average LED current is described in the following equation, When no analog dimming is being applied, the ICSH current is described by the following equation,
The value of RCSH is 11.8kΩ and this gives ICSH as 105µA. The method used to adjust ICSH for analog dimming is with an external variable current source consisting of an on-board opamp circuit. When a 0 to 10V voltage signal is applied to the ADIM test point, the op-amp will adjust its output current accordingly. This output current is sourced into the node consisting of the CSH pin and resistors R21 and R26 which adjusts the ICSH current from the original 105µA based on the 0 to 10V analog dimming signal. A low analog dimming voltage will source more current into the CSH pin effectively dimming the LEDs while a high analog dim voltage will source less current resulting in less dimming. ADIM should be a precise external voltage reference.
For the demo board RHSP is 1kΩ and RSNS is 0.3Ω and so the equation becomes,
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FIGURE 9. Analog dimming circuit
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PWM DIMMING
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FIGURE 10. PWM dimming circuit The circuitry associated with pulse-width modulation (PWM) dimming is highlighted in Figure 10 and closing jumper J3 enables this function. A logic-level PWM signal can be applied to the DIM pin which in turn drives the nDIM pin thought the MosFET Q3. A pull down resistor (R34) has also been added to properly turn off Q3 if no signal is present. The nDIM pin controls the dimming NFET (Q2) which is in series with the LED stack. The brightness of the LEDs can be varied by modulating the duty cycle of the PWM signal. LED brightness is approximately proportional to the PWM signal duty cycle, so for example, 30% duty cycle equals approximately 30% LED brightness.
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Conducted EMI Analysis
Several automobile manufacturers base their conducted EMI limit requirements on the CISPR-25, Class 3 standard. However each manufacturer in the end specifies their own individual method for EMI qualification, and so there is not at this time a universally adopted set of EMI limits and performance requirements. This makes it challenging to design a single LED driver circuit to comprehensively meet the EMI requirements for each and every auto manufacturer. Therefore the Class 3 limits described by CISPR-25 were used as a reference point for the EMI performance of the LM3421 SEPIC design. From this data, specific auto manufacturer EMI limits and requirements can be applied to the data to determine if
additional optimization of the reference design is required for compliance. Conducted EMI tests were performed with a six LED load running 345mA of LED current with an input power supply voltage of 12V. In the following EMI scan of Figure 11, the CISPR-25 Class 3 "peak" limits are designated as blue and the "average" limits are designated in green. No enclosure was used around the board. Due to limitations in the data gathering equipment only the peak EMI data from 100kHz to 30MHz could be acquired, and so the conducted EMI performance of the evaluation board at other frequencies and versus quasi-peak and average CISPR25 limits can only be roughly interpreted.
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FIGURE 11. Conducted "Peak" scan per CISPR-25 with Class 3 limits
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Radiated EMI Analysis
Similar to the conducted EMI testing described previously, several automobile manufacturers base their radiated EMI limit requirements on the CISPR-25, Class 3 standard. However each manufacturer in the end specifies their own individual method for EMI qualification, and so there is not at this time a universally adopted set of EMI limits and performance requirements. This makes it challenging to design a single LED driver circuit to comprehensively meet the EMI requirements for each and every auto manufacturer. Therefore the Class 3 limits described by CISPR-25 were used as a reference point for the EMI performance of the LM3421 SEPIC design. From this data, specific auto manufacturer EMI limits and requirements can be applied to the data to determine if additional optimization of the reference design is required for compliance.
Radiated EMI tests were performed with a six LED load running 345mA of LED current with an input power supply voltage of 12V. No enclosure was used around the board. In the EMI scan of Figure 12, the CISPR-25 Class 3 "peak" limits are shown in blue. For the EMI scan of Figure 13, the CISPR-25 Class 3 "average" limits are shown in green. Some frequency bands have multiple limits associated with them. In these instances, the frequency bands have multiple RF spectrum allocations (e.g. FM, CB, VHF, etc...), and so all applicable limits are being shown even if they overlap. Due to limitations in the data gathering equipment only the peak EMI data from 10Mhz to 1GHz could be acquired, and so the radiated EMI performance of the evaluation board at other frequencies and versus quasi-peak and average CISPR25 limits can only be roughly interpreted.
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FIGURE 12. Radiated “Peak” scan data per CISPR-25 with Class 3 "Peak" limits
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FIGURE 13. Radiated “Peak” scan data per CISPR-25 with Class 3 "Average" limits
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Thermal Analysis
Thermal scans were taken of the stand-alone LED demo board at room temperature with no airflow. Primary hot spots on the top and bottom layers are associated with the snubber resistors R27 and R31. Test Conditions: VIN = 12.1V, IIN=651mA, VOUT = 20.4V (6 LEDs), ILED = 336mA, PIN = 7.88W, POUT = 6.85W, Efficiency = 86.9%, Time = 75 minutes, Ta = Room temp, No airflow, No enclosure Thermal Scan, Top Layer
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Thermal Scan, Bottom Layer
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LM3421 SEPIC LED Driver Evaluation Board for Automotive Applications
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