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LM4250J-MIL

LM4250J-MIL

  • 厂商:

    NSC

  • 封装:

  • 描述:

    LM4250J-MIL - Programmable Operational Amplifier - National Semiconductor

  • 数据手册
  • 价格&库存
LM4250J-MIL 数据手册
LM4250 Programmable Operational Amplifier August 2000 LM4250 Programmable Operational Amplifier General Description The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption, slew rate, input noise, and the gain-bandwidth product. The device is a truly general purpose operational amplifier. The LM4250C is identical to the LM4250 except that the LM4250C has its performance guaranteed over a 0˚C to +70˚C temperature range instead of the −55˚C to +125˚C temperature range of the LM4250. Features n n n n n n n n ± 1V to ± 18V power supply operation 3 nA input offset current Standby power consumption as low as 500 nW No frequency compensation required Programmable electrical characteristics Offset voltage nulling capability Can be powered by two flashlight batteries Short circuit protection Connection Diagrams Metal Can Package Dual-In-Line Package DS009300-5 Top View DS009300-2 Top View X5 Difference Amplifier 500 Nano-Watt X10 Amplifier DS009300-4 DS009300-3 Quiescent PD = 0.6 mW Quiescent PD = 500 nW © 2000 National Semiconductor Corporation DS009300 www.national.com LM4250 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 3) LM4250 Supply Voltage Operating Temp. Range Differential Input Voltage Input Voltage (Note 2) ISET Current Output Short Circuit Duration TJMAX H-Package N-Package J-Package M-Package Power Dissipation at TA = 25˚C H-Package (Still Air) (400 LF/Min Air Flow) N-Package J-Package M-Package Thermal Resistance (Typical) θJA H-Package (Still Air) (400 LF/Min Air Flow) N-Package J-Package M-Package (Typical) θJC H-Package Storage Temperature Range 21˚C/W −65˚C to +150˚C 21˚C/W −65˚C to +150˚C 108˚C/W 165˚C/W 65˚C/W 165˚C/W 65˚C/W 130˚C/W 108˚C/W 190˚C/W 1000 mW 500 mW 1200 mW 300 mW 1200 mW 500 mW 600 mW 350 mW 150˚C 150˚C 100˚C 100˚C 100˚C 100˚C LM4250C ± 18V −55˚C ≤ TA ≤ +125˚C ± 18V 0˚C ≤ TA ≤ +70˚C ± 30V ± 15V 150 nA Continuous ± 30V ± 15V 150 nA Continuous Soldering Information Dual-In-Line Package Soldering (10 seconds) 260˚C Small Outline Package Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD tolerance (Note 4) 800V Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage. Note 3: Refer to RETS4250X for military specifications. Note 4: Human body model, 1.5 kΩ in series with 100 pF. www.national.com 2 LM4250 Resistor Biasing Set Current Setting Resistor to V− ISET VS 0.1 µA 25.6 MΩ 55.6 MΩ 116 MΩ 176 MΩ 236 MΩ 296 MΩ 0.5 µA 5.04 MΩ 11.0 MΩ 23.0 MΩ 35.0 MΩ 47.0 MΩ 59.0 MΩ 1.0 µA 2.5 MΩ 5.5 MΩ 11.5 MΩ 17.5 MΩ 23.5 MΩ 29.5 MΩ 5 µA 492 kΩ 1.09 MΩ 2.29 MΩ 3.49 MΩ 4.69 MΩ 5.89 MΩ 10 µA 244 kΩ 544 kΩ 1.14 MΩ 1.74 MΩ 2.34 MΩ 2.94 MΩ ± 1.5V ± 3.0V ± 6.0V ± 9.0V ± 12.0V ± 15.0V Electrical Characteristics LM4250 (−55˚C ≤ TA ≤ +125˚C unless otherwise specified.) TA = TJ VS = ± 1.5V Parameter VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS Ibias Input Voltage Range Large Signal Voltage Gain Output Voltage Swing Common Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current VO = ± 0.5V, RL = 100 kΩ RL = 10 kΩ RL = 100 kΩ RL = 10 kΩ RS ≤ 10 kΩ RS ≤ 10 kΩ 70 dB 76 dB 8 µA VS = ± 15V Parameter VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS Ibias Input Voltage Range Conditions RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 10V, RL = 10 kΩ TA = 25˚C TA = 25˚C RS ≤ 100 kΩ TA = +125˚C TA = −55˚C 10 µA 300 µW 4 mV 25 nA 3 nA 7.5 nA 100k 100k 90 µA 2.7 mW 6 mV 25 nA 10 nA 50 nA ISET = 1 µA Min Max 3 mV 3 nA 7.5 nA ISET = 10 µA Min Max 5 mV 10 nA 50 nA Conditions RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 0.6V, RL = 10 kΩ TA = 25˚C TA = 25˚C RS ≤ 100 kΩ TA = +125˚C TA = −55˚C 7.5 µA 23 µW 4 mV 5 nA 3 nA 7.5 nA 40k 50k 80 µA 240 µW 6 mV 10 nA 10 nA 50 nA ISET = 1 µA Min Max 3 mV 3 nA 7.5 nA ISET = 10 µA Min Max 5 mV 10 nA 50 nA ± 0.6V 30k ± 0.6V 30k ± 0.6V ± 0.6V 70 dB 76 dB 90 µA ± 13.5V ± 13.5V 3 www.national.com LM4250 Electrical Characteristics Parameter Large Signal Voltage Gain Output Voltage Swing Common Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current Power Consumption (Continued) VS = ± 15V Conditions ISET = 1 µA Min Max 50k 50k ISET = 10 µA Min Max VO = ± 10V, RL = 100 kΩ RL = 10 kΩ RL = 100 kΩ RL = 10 kΩ RS ≤ 10 kΩ RS ≤ 10 kΩ ± 12V ± 12V 70 dB 76 dB 11 µA 330 µW 70 dB 76 dB 100 µA 3 mW Electrical Characteristics LM4250C (0˚C ≤ TA ≤ +70˚C unless otherwise specified.) TA = TJ VS = ± 1.5V Parameter VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS Ibias Input Voltage Range Large Signal Voltage Gain Output Voltage Swing Common Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current Power Consumption VO = ± 0.5V, RL = 100 kΩ RL = 10 kΩ RL = 100 kΩ RL = 10 kΩ RS ≤ 10 kΩ RS ≤ 10 kΩ 70 dB 74 dB 8 µA 24 µW VS = ± 15V Parameter VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS Ibias Conditions RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 10V, RL = 10 kΩ TA = 25˚C TA = 25˚C RS ≤ 100 kΩ 11 µA 330 µW 6.5 mV 8 nA 10 nA 60k 60k 100 µA 3 mW 7.5 mV 25 nA 80 nA ISET = 1 µA Min Max 5 mV 6 nA 10 nA ISET = 10 µA Min Max 6 mV 20 nA 75 nA Conditions RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 0.6V, RL = 10 kΩ TA = 25˚C TA = 25˚C RS ≤ 10 kΩ 8 µA 24 µW 6.5 mV 8 nA 10 nA 25k 25k 90 µA 270 µW 7.5 mV 25 nA 80 nA ISET = 1 µA Min Max 5 mV 6 nA 10 nA ISET = 10 µA Min Max 6 mV 20 nA 75 nA ± 0.6V 25k ± 0.6V 25k ± 0.6V ± 0.6V 70 dB 74 dB 90 µA 270 µW www.national.com 4 LM4250 Electrical Characteristics Parameter Input Voltage Range Large Signal Voltage Gain Output Voltage Swing Common Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current Power Consumption (Continued) VS = ± 15V Conditions ISET = 1 µA Min Max ISET = 10 µA Min Max ± 13.5V VO = ± 10V, RL = 100 kΩ RL = 10 kΩ RL = 100 kΩ RL = 10 kΩ RS ≤ 10 kΩ RS ≤ 10 kΩ 70 dB 74 dB 11 µA 330 µW 50k ± 13.5V 50k ± 12V ± 12V 70 dB 74 dB 100 µA 3 mW Typical Performance Characteristics Input Bias Current vs ISET Input Bias Current vs Temperature Input Offset Current vs Temperature DS009300-15 DS009300-16 DS009300-17 Unnulled Input Offset Voltage Change vs ISET Unnulled Input Offset Voltage Change vs Temperature Peak to Peak Output Voltage Swing vs Load Resistance DS009300-18 DS009300-19 DS009300-20 5 www.national.com LM4250 Typical Performance Characteristics Peak to Peak Output Voltage Swing vs Supply Voltage (Continued) Quiescent Current (Iq) vs Temperature Quiescent Current (Iq) vs ISET DS009300-23 DS009300-21 DS009300-22 Slew Rate vs ISET Gain Bandwidth Product vs ISET Open Loop Voltage Gain vs ISET DS009300-24 DS009300-25 DS009300-26 Phase Margin vs ISET Input Noise Current (In) and Voltage (En) vs Frequency RSET vs ISET DS009300-27 DS009300-28 DS009300-29 www.national.com 6 LM4250 Typical Applications X5 Difference Amplifier 500 Nano-Watt X10 Amplifier DS009300-4 DS009300-3 Quiescent PD = 0.6 mW Quiescent PD = 500 nW Floating Input Meter Amplifier 100 nA full Scale DS009300-8 Quiescent PD = 1.8 µW *Meter movement (0–100 µA, 2 kΩ) marked for 0–100 nA full scale. 7 www.national.com LM4250 Typical Applications (Continued) X100 Instrumentation Amplifier 10 µW DS009300-9 Note 5: Quiescent PD = 10 µW. Note 6: R2, R3, R4, R5, R6 and R7 are 1% resistors. Note 7: R11 and C1 are for DC and AC common mode rejection adjustments. RSET Connected to V− RSET Connected to Ground DS009300-30 DS009300-11 DS009300-10 Transistor Current Sourcing Biasing FET Current Sourcing Biasing Offset Null Circuit DS009300-13 DS009300-14 DS009300-12 *R1 limits ISET maximum www.national.com 8 LM4250 Schematic Diagram DS009300-1 Ordering Information Temperature Range Military −55˚C ≤ TA ≤ +125˚C Commercial 0˚C ≤ TA ≤ +70˚C LM4250CN LM4250CM LM4250CMX LM4250J-MIL LM4250CH 8-Pin Molded DIP 8-Pin Surface Mount 8-Pin Ceramic DIP 8-Pin Metal Can H08C J08E M08A Package NSC Package Number N08E 9 www.national.com LM4250 Physical Dimensions inches (millimeters) unless otherwise noted Metal Can Package (H) Order Number LM4250CH NS Package Number H08C Ceramic Dual-In-Line Package (J) Order Number LM4250J-MIL NS Package Number J08A www.national.com 10 LM4250 Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Small Outline Package (M) Order Number LM4250CM or LM4250CMX NS Package Number M08A Molded Dual-In-Line Package (N) Order Number LM4250CN NS Package Number N08E 11 www.national.com LM4250 Programmable Operational Amplifier Notes LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com www.national.com National Semiconductor Europe Fax: +49 (0) 180-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: ap.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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