LM4562_07

LM4562 Dual High Performance, High Fidelity Audio Operational Amplifier May 2007 LM4562 Dual High Performance, High Fidelity Audio Operational Amplifier General Description The LM4562 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LM4562 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LM4562 combines extremely low voltage noise density (2.7nV/√Hz) with vanishingly low THD+N (0.00003%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LM4562 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. The LM4562's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent operational amplifier DC performance. The LM4562 has a wide supply range of ±2.5V to ±17V. Over this supply range the LM4562’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LM4562 is unity gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LM4562 is available in 8–lead narrow body SOIC, 8–lead Plastic DIP, and 8–lead Metal Can TO-99. Demonstration boards are available for each package. RL = 2kΩ RL = 600Ω 0.00003% (typ) 0.00003% (typ) 2.7nV/√Hz (typ) ±20V/μs (typ) 55MHz (typ) 140dB (typ) 10nA (typ) 0.1mV (typ) 0.000009% ■ Input Noise Density ■ Slew Rate ■ Gain Bandwidth Product ■ Open Loop Gain (RL = 600Ω) ■ Input Bias Current ■ Input Offset Voltage ■ DC Gain Linearity Error Features ■ ■ ■ ■ ■ Easily drives 600Ω loads Optimized for superior audio signal fidelity Output short circuit protection PSRR and CMRR exceed 120dB (typ) SOIC, DIP, TO-99 metal can packages Applications ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultra high quality audio amplification High fidelity preamplifiers High fidelity multimedia State of the art phono pre amps High performance professional audio High fidelity equalization and crossover networks High performance line drivers High performance line receivers High fidelity active filters Key Specifications ■ Power Supply Voltage Range ■  THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) ±2.5V to ±17V Typical Application 201572k5 Passively Equalized RIAA Phono Preamplifier © 2007 National Semiconductor Corporation 201572 www.national.com LM4562 Connection Diagrams 20157255 Order Number LM4562MA See NS Package Number — M08A Order Number LM4562NA See NS Package Number — N08E Metal Can 201572f3 Order Number LM4562HA See NS Package Number — H08C www.national.com 2 LM4562 Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage (VS = V+ - V-) Storage Temperature Input Voltage Output Short Circuit (Note 3) Power Dissipation ESD Susceptibility (Note 4) ESD Susceptibility (Note 5) 36V −65°C to 150°C (V-) - 0.7V to (V+) + 0.7V Continuous Internally Limited 2000V Pins 1, 4, 7 and 8 Pins 2, 3, 5 and 6 Junction Temperature Thermal Resistance  θJA (SO)  θJA (NA)  θJA (HA)  θJC (HA) Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage Range (Notes 1, 2) 200V 100V 150°C 145°C/W 102°C/W 150°C/W 35°C/W –40°C ≤ TA ≤ 85°C ±2.5V ≤ VS ≤ ± 17V 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol Parameter Electrical Characteristics for the LM4562 The specifications apply for VS = ±15V, RL = LM4562 Conditions AV = 1, VOUT = 3Vrms Typical (Note 6) Limit (Note 7) Units (Limits) THD+N Total Harmonic Distortion + Noise RL = 2kΩ RL = 600Ω AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00003 0.00003 0.00005 55 ±20 % (max) 0.00009 % 45 ±15 MHz (min) V/μs (min) MHz IMD GBWP SR FPBW Intermodulation Distortion Gain Bandwidth Product Slew Rate Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz AV = –1, 10V step, CL = 100pF 0.1% error range fBW = 20Hz to 20kHz f = 1kHz f = 10Hz f = 1kHz f = 10Hz 10 ts Settling time Equivalent Input Noise Voltage 1.2 0.34 2.7 6.4 1.6 3.1 ±0.1 0.2 120 118 112 10 0.1 11 +14.1 –13.9 65 (V+) – 2.0 (V-) + 2.0 110 72 110 ±0.7 0.65 4.7 μs μVRMS (max) en Equivalent Input Noise Density in VOS Current Noise Density Offset Voltage  nV/√Hz (max)  pA/√Hz mV (max) μV/°C dB (min) dB nA (max) nA/°C nA (max) V (min) dB (min) kΩ MΩ Average Input Offset Voltage Drift vs ΔVOS/ΔTemp –40°C ≤ TA ≤ 85°C Temperature PSRR ISOCH-CH IB ΔIOS/ΔTemp IOS VIN-CM CMRR ZIN Average Input Offset Voltage Shift vs ΔVS = 20V (Note 8) Power Supply Voltage Channel-to-Channel Isolation Input Bias Current Input Bias Current Drift vs Temperature Input Offset Current Common-Mode Input Voltage Range Common-Mode Rejection Differential Input Impedance Common Mode Input Impedance –10V