LM48312TLE

LM48312 2.6W, Ultra-Low EMI, Filterless, Mono Class D Audio Power Amplifier with E2S LM48312  May 13, 2010 2.6W, Ultra-Low EMI, Filterless, Mono Class D Audio Power Amplifier with E2S General Description The LM48312 is a single supply, high efficiency, mono, 2.6W, filterless switching audio amplifier. The LM48312 features National’s Enhanced Emissions Suppression (E2S) system, that features a unique patented ultra low EMI, spread spectrum, PWM architecture, that significantly reduces RF emissions while preserving audio quality and efficiency. The E2S system improves battery life, reduces external component count, board area consumption, and system cost, simplifying design. The LM48312 is designed to meet the demands of portable multimedia devices. Operating from a single 5V supply, the device is capable of delivering 2.6W of continuous output power to a 4Ω load with less than 10% THD+N. Flexible power supply requirements allow operation from 2.4V to 5.5V. The LM48312 features both a spread spectrum modulation scheme, and an advanced, patented edge rate control (ERC) architecture that significantly reduces emissions, while maintaining high quality audio reproduction (THD+N = 0.03%) and high efficiency (η = 88%). The LM48312 features high efficiency compared to conventional Class AB amplifiers, and other low EMI Class D amplifiers. When driving an 8Ω speaker from a 5V supply, the device operates with 88% efficiency at PO = 1W. The LM48312 features five gain settings, selected through a single logic input, further reducing solution size. A low power shutdown mode reduces supply current consumption to 0.01µA. Advanced output short circuit protection with auto-recovery prevents the device from being damaged during fault conditions. Superior click and pop suppression eliminates audible transients on power-up/down and during shutdown. Key Specifications ■ Efficiency at 3.6V, 400mW into 8Ω ■ Efficiency at 5V, 1W into 8Ω ■ Quiescent Power Supply Current at 5V ■ Power Output at VDD = 5V, RL = 4Ω THD+N ≤ 10% THD+N ≤ 1% ■ Power Output at VDD = 5V, RL = 8Ω THD+N ≤ 10% THD+N ≤ 1% ■ Shutdown current 84% (typ) 88% (typ) 3.1mA 2.6W (typ) 2.1W (typ) 1.6W (typ) 1.3W (typ) 0.01μA (typ) Features ■ Passes FCC Class B Radiated Emissions with 20 inches of cable ■ E2S System Reduces EMI while Preserving Audio Quality ■ ■ ■ ■ ■ ■ ■ ■ and Efficiency Output Short Circuit Protection with Auto-Recovery No output filter required Improved Audio Quality Minimum external components Five Logic Selectable Gain Settings (0, 3, 6, 9, 12dB) Low Power Shutdown Mode Click and Pop suppression Available in space-saving microSMD package Applications ■ Mobile phones ■ PDAs ■ Laptops Boomer® is a registered trademark of National Semiconductor Corporation. © 2010 National Semiconductor Corporation 301107 www.national.com LM48312 Typical Application 30110731 FIGURE 1. Typical Audio Amplifier Application Circuit www.national.com 2 LM48312 Connection Diagrams TL Package 1.539mm x 1.565mm x 0.6mm 9–Bump micro SMD Marking 301107a7 Top View X = Date Code T = Die Traceability G = Boomer Family N4 = LM48312TLE 30110732 Top View Order Number LM48312TLE See NS Package Number TLA09BCA Ordering Information Order Number LM48312TLE LM48312TLX Package 9 Bump micro SMD 9 Bump micro SMD Package DWG # TLA09BCA TLA09BCA Transport Media 250 units on tape and reel 3000 units on tape and reel MSL Level 1 1 Green Status RoHS & no Sb/Br RoHS & no Sb/Br Pin Descriptions TABLE 1. Bump Description Pin A1 A2 A3 B1 B2 B3 C1 Name IN+ SD OUTA VDD PVDD PGND INNon-Inverting Input Active Low Shutdown Input. Connect to VDD for normal operation. Non-Inverting Output Power Supply H-Bridge Power Supply Ground Inverting Input Gain Select: GAIN = FLOAT: AV = 0dB GAIN = VDD: AV = 3dB GAIN = GND: AV = 6dB GAIN = 20kΩ to GND = 9dB GAIN = 20kΩ to VDD = 12dB C3 OUTB Inverting Output Description C2 GAIN 3 www.national.com LM48312 Absolute Maximum Ratings (Note 1, Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Storage Temperature Input Voltage Power Dissipation (Note 3) ESD Rating (Note 4) ESD Rating (Note 5) 6.0V −65°C to +150°C − 0.3V to VDD +0.3V Internally Limited 2000V 200V Junction Temperature Thermal Resistance  θJA Soldering Information See AN-1112 "Micro SMD Wafer Level Chip Scale Package." 150°C 70°C/W Operating Ratings Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage (VDD, PVDD) (Note 2, Note 8) (Note 1, Note 2) −40°C ≤ TA ≤ +85°C 2.4V ≤ VDD ≤ 5.5V Electrical Characteristics VDD = PVDD = 5V Symbol VDD IDD ISD VOS VIH VIL TWU fSW Parameter Supply Voltage Range Quiescent Power Supply Current Shutdown Current Differential Output Offset Voltage Logic Input High Voltage Logic Input Low Voltage Wake Up Time Switching Frequency GAIN = FLOAT GAIN = VDD GAIN = GND GAIN = 20kΩ to GND GAIN = 20kΩ to VDD AV = 0dB AV = 3dB AV = 6dB AV = 9dB AV = 12dB VIN = 0, RL = 8Ω VDD = 3.3V VDD = 5V Shutdown enabled VIN = 0 Conditions The following specifications apply for AV = 6dB, RL = 8Ω, f = 1kHz, unless otherwise specified. Limits apply for TA = 25°C. LM48312 Min (Note 7) 2.4 2.6 3.1 0.01 –48 1.4 0.4 7.5 300±30 –0.5 2.5 5.5 8.5 11.5 0 3 6 9 12 56 49 42 35 27 0.5 3.5 6.5 9.5 12.5 10 Typ (Note 6) Max (Note 7) 5.5 3.3 3.9 1.0 48 Units (Limits) V mA mA μA mV V V ms kHz dB dB dB dB dB kΩ kΩ kΩ kΩ kΩ AV Gain RIN Input Resistance 20 www.national.com 4 LM48312 LM48312 Symbol Parameter Conditions RL = 4Ω, THD = 10% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.3V VDD = 2.5V RL = 8Ω, THD = 10% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.3V VDD = 2.5V RL = 4Ω, THD = 1% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.3V VDD = 2.5V RL = 8Ω, THD = 1% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.3V VDD = 2.5V THD+N Total Harmonic Distortion + Noise PO = 200mW, RL = 8Ω, f = 1kHz PO = 100mW, RL = 8Ω, f = 1kHz VRIPPLE = 200mVP-P Sine, Inputs AC GND, AV = 0dB, PSRR Power Supply Rejection Ratio CIN = 1μF fRIPPLE = 217Hz fRIPPLE = 1kHz VRIPPLE = 1VP-P , fRIPPLE = 217Hz AV = 0dB VDD = 5V, POUT = 1W VDD = 3.3V, POUT = 400mW PO = 1W 0 Un-weighted, AV = 0dB A-weighted, AV = 0dB 71 70 65 88 85 95 VDD – 0.25 69 48   1.1 450 Min (Note 7) Typ (Note 6) Max (Note 7) Units (Limits) 2.6 1.1 580 W W mW PO Output Power 1.6 660 354 W mW mW 2.1 900 460 W mW mW 1.3 530 286 0.027 0.03 W (min) mW mW % % dB dB dB % % dB V μV μV CMRR η SNR CMVR εOS Common Mode Rejection Ratio Efficiency Signal to Noise Ratio Common Mode Input Voltage Range Output Noise 5 www.national.com LM48312 Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at theAbsolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditionsindicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given inAbsolute Maximum Ratings, whichever is lower. Note 4: Human body model, applicable std. JESD22-A114C. Note 5: Machine model, applicable std. JESD22-A115-A. Note 6: Typical values represent most likely parametric norms at TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis. Note 8: RL is a resistive load in series with two inductors to simulate an actual speaker load. For RL = 8Ω, the load is 15µH + 8Ω, +15µH. For RL = 4Ω, the load is 15µH + 4Ω + 15µH. Test Circuits 30110728 FIGURE 2. PSRR Test Circuit 30110727 FIGURE 3. CMRR Test Circuit www.national.com 6 LM48312 Typical Performance Characteristics For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted. THD+N vs Frequency VDD = 2.5V, PO = 180mW, RL = 8Ω THD+N vs Frequency VDD = 3.3V, PO = 325mW, RL = 8Ω 30110748 30110749 THD+N vs Frequency VDD = 5V, PO = 600mW, RL = 8Ω THD+N vs Frequency VDD = 2.5V, PO = 300mW, RL = 8Ω 30110750 30110751 THD+N vs Frequency VDD = 3.3V, PO = 600mW, RL = 4Ω THD+N vs Frequency VDD = 5V, PO = 900mW, RL = 4Ω 30110752 30110753 7 www.national.com LM48312 THD+N vs Frequency VDD = 5V, PO = 1W, RL = 3Ω THD+N vs Output Power AV = 0dB, f = 1kHz, RL = 8Ω 30110733 30110754 THD+N vs Output Power AV = 3dB, f = 1kHz, RL = 8Ω THD+N vs Output Power AV = 6dB, f = 1kHz, RL = 8Ω 30110734 30110735 THD+N vs Output Power AV = 9dB, f = 1kHz, RL = 8Ω THD+N vs Output Power AV = 12dB, f = 1kHz, RL = 8Ω 30110736 30110737 www.national.com 8 LM48312 THD+N vs Output Power AV = 0dB, f = 1kHz, RL = 4Ω THD+N vs Output Power AV = 3dB, f = 1kHz, RL = 4Ω 30110738 30110739 THD+N vs Output Power AV = 6dB, f = 1kHz, RL = 4Ω THD+N vs Output Power AV = 9dB, f = 1kHz, RL = 4Ω 30110775 30110741 THD+N vs Output Power AV = 12dB, f = 1kHz, RL = 4Ω THD+N vs Output Power AV = 0dB, f = 1kHz, RL = 3Ω 30110742 30110743 9 www.national.com LM48312 THD+N vs Output Power AV = 3dB, f = 1kHz, RL = 3Ω THD+N vs Output Power AV = 6dB, f = 1kHz, RL = 3Ω 30110744 30110745 THD+N vs Output Power AV = 9dB, f = 1kHz, RL = 3Ω THD+N vs Output Power AV = 12dB, f = 1kHz, RL = 3Ω 30110746 30110747 Efficiency vs Output Power f = 1kHz, RL = 4Ω Efficiency vs Output Power f = 1kHz, RL = 8Ω 30110755 30110756 www.national.com 10 LM48312 Power Dissipation vs Output Power f = 1kHz, RL = 4Ω Power Dissipation vs Output Power f = 1kHz, RL = 8Ω 30110757 30110758 Output Power vs Supply Voltage f = 1kHz, RL = 4Ω Output Power vs Supply Voltage f = 1kHz, RL = 8Ω 30110759 30110760 PSRR vs Frequency VDD = 5V, VRIPPLE = 200mVP-P, RL = 8Ω CMRR vs Frequency VDD = 5V, VRIPPLE = 1VP-P, RL = 8Ω 30110762 30110763 11 www.national.com LM48312 Spread Spectrum Output Spectrum vs Frequency VDD = 5V, VIN = 1VRMS, RL = 8Ω Wideband Spread Spectrum Output Spectrum vs Frequency VDD = 5V, RL = 8Ω 30110764 30110765 Supply Current vs Supply Voltage No Load Shutdown Supply Current vs Supply Voltage No Load 30110766 30110767 www.national.com 12 LM48312 Application Information GENERAL AMPLIFIER FUNCTION The LM48312 mono Class D audio power amplifier features a filterless modulation scheme that reduces external component count, conserving board space and reducing system cost. The outputs of the device transition from VDD to GND with a 300kHz switching frequency. With no signal applied, the outputs (VOUTA and VOUTB) switch with a 50% duty cycle, in phase, causing the two outputs to cancel. This cancellation results in no net voltage across the speaker, thus there is no current to the load in the idle state. With the input signal applied, the duty cycle (pulse width) of the LM48312 outputs changes. For increasing output voltage, the duty cycle of VOUTA increases, while the duty cycle of VOUTB decreases. For decreasing output voltages, the converse occurs. The difference between the two pulse widths yields the differential output voltage. ENHANCED EMISSIONS SUPPRESSION SYSTEM (E2S) The LM48312 features National’s patented E2S system that reduces EMI, while maintaining high quality audio reproduction and efficiency. The E2S system features spread spectrum and advanced edge rate control (ERC). The LM48312 ERC greatly reduces the high frequency components of the output square waves by controlling the output rise and fall times, slowing the transitions to reduce RF emissions, while maximizing THD+N and efficiency performance. The overall result of the E2S system is a filterless Class D amplifier that passes FCC Class B radiated emissions standards with 20in of twisted pair cable, with excellent 0.03% THD+N and high 88% efficiency. SPREAD SPECTRUM The spread spectrum modulation reduces the need for output filters, ferrite beads or chokes. The switching frequency varies randomly by 30% about a 300kHz center frequency, reducing the wideband spectral contend, improving EMI emissions radiated by the speaker and associated cables and traces. Where a fixed frequency class D exhibits large amounts of spectral energy at multiples of the switching frequency, the spread spectrum architecture of the LM48312 spreads that energy over a larger bandwidth (See Typical Performance Characteristics). The cycle-to-cycle variation of the switching period does not affect the audio reproduction, efficiency, or PSRR. DIFFERENTIAL AMPLIFIER EXPLANATION As logic supplies continue to shrink, system designers are increasingly turning to differential analog signal handling to preserve signal to noise ratios with restricted voltage signs. The LM48312 features a fully differential speaker amplifier. A differential amplifier amplifies the difference between the two input signals. Traditional audio power amplifiers have typically offered only single-ended inputs resulting in a 6dB reduction of SNR relative to differential inputs. The LM48312 also offers the possibility of DC input coupling which eliminates the input coupling capacitors. A major benefit of the fully differential amplifier is the improved common mode rejection ratio (CMRR) over single ended input amplifiers. The increased CMRR of the differential amplifier reduces sensitivity to ground offset related noise injection, especially important in noisy systems. POWER DISSIPATION AND EFFICIENCY The major benefit of a Class D amplifier is increased efficiency versus a Class AB. The efficiency of the LM48312 is attributed to the region of operation of the transistors in the output stage. The Class D output stage acts as current steering switches, consuming negligible amounts of power compared to their Class AB counterparts. Most of the power loss associated with the output stage is due to the IR loss of the MOSFET onresistance, along with switching losses due to gate charge. GAIN SETTING The LM48312 features five internally configured gain settings, 0, 3, 6, 9, and 12dB. The device gain is selected through a single pin (GAIN). The gain settings are shown in Table 2. The gain of the LM48312 is determined at startup. When the LM48312 is powered up or brought out of shutdown, the device checks the state of GAIN, and sets the amplifier gain accordingly. Once the gain is set, the state of GAIN is ignored and the device gain cannot be changed until the device is either shutdown or powered down. TABLE 2. Gain Setting GAIN FLOAT VDD GND 20kΩ to GND 20kΩ to VDD GAIN SETTING 0dB 3dB 6dB 9dB 12dB For proper gain selection: 1. Use 20kΩ resistors with 10% tolerance or better for the 9dB and 12dB gain settings. 2. Short GAIN to either VDD or GND through 100Ω or less for the 3dB and 6dB gain settings. 3. FLOAT = 20MΩ or more for the 0dB gain setting. SHUTDOWN FUNCTION The LM48312 features a low current shutdown mode. Set SD = GND to disable the amplifier and reduce supply current to 0.01µA. Switch SD between GND and VDD for minimum current consumption is shutdown. The LM48312 may be disabled with shutdown voltages in between GND and VDD, the idle current will be greater than the typical 0.1µA value. Increased THD +N may also be observed when a voltage of less than VDD is applied to SD. The LM48312 shutdown input has and internal pulldown resistor. The purpose of this resistor is to eliminate any unwanted state changes when SD is floating. To minimize shutdown current, SD should be driven to GND or left floating. If SD is not driven to GND or floating, an increase in shutdown supply current will be noticed. PROPER SELECTION OF EXTERNAL COMPONENTS Audio Amplifier Power Supply Bypassing/Filtering Proper power supply bypassing is critical for low noise performance and high PSRR. Place the supply bypass capacitors as close to the device as possible. Typical applications employ a voltage regulator with 10µF and 0.1µF bypass capacitors that increase supply stability. These capacitors do not eliminate the need for bypassing of the LM48312 supply pins. A 1µF capacitor is recommended. 13 www.national.com LM48312 Audio Amplifier Input Capacitor Selection Input capacitors may be required for some applications, or when the audio source is single-ended. Input capacitors block the DC component of the audio signal, eliminating any conflict between the DC component of the audio source and the bias voltage of the LM48312. The input capacitors create a highpass filter with the input resistors RIN. The -3dB point of the high pass filter is found using equation (1) below. f = 1 / 2πRINCIN (1) Single-Ended Audio Amplifier Configuration The LM48312 is compatible with single-ended sources. When configured for single-ended inputs, input capacitors must be used to block and DC component at the input of the device. Figure 4 shows the typical single-ended applications circuit. Where RIN is the value of the input resistor given in the Electrical Characteristics table. The input capacitors can also be used to remove low frequency content from the audio signal. Small speakers cannot reproduce, and may even be damaged by low frequencies. High pass filtering the audio signal helps protect the speakers. When the LM48312 is using a single-ended source, power supply noise on the ground is seen as an input signal. Setting the high-pass filter point above the power supply noise frequencies, 217Hz in a GSM phone, for example, filters out the noise such that it is not amplified and heard on the output. Capacitors with a tolerance of 10% or better are recommended for impedance matching and improved CMRR and PSRR. PCB LAYOUT GUIDELINES As output power increases, interconnect resistance (PCB traces and wires) between the amplifier, load and power supply create a voltage drop. The voltage loss due to the traces between the LM48312 and the load results in lower output power and decreased efficiency. Higher trace resistance between the supply and the LM48312 has the same effect as a poorly regulated supply, increasing ripple on the supply line, and reducing peak output power. The effects of residual trace resistance increases as output current increases due to higher output power, decreased load impedance or both. To maintain the highest output voltage swing and corresponding peak output power, the PCB traces that connect the output pins to the load and the supply pins to the power supply should be as wide as possible to minimize trace resistance. The use of power and ground planes will give the best THD +N performance. In addition to reducing trace resistance, the 301107a6 FIGURE 4. Single-Ended Input Configuration use of power planes creates parasitic capacitors that help to filter the power supply line. The inductive nature of the transducer load can also result in overshoot on one of both edges, clamped by the parasitic diodes to GND and VDD in each case. From an EMI standpoint, this is an aggressive waveform that can radiate or conduct to other components in the system and cause interference. In is essential to keep the power and output traces short and well shielded if possible. Use of ground planes beads and micros-strip layout techniques are all useful in preventing unwanted interference. As the distance from the LM48312 and the speaker increases, the amount of EMI radiation increases due to the output wires or traces acting as antennas become more efficient with length. Ferrite chip inductors places close to the LM48312 outputs may be needed to reduce EMI radiation. www.national.com 14 LM48312 Demo Board Schematic 30110768 FIGURE 5: LM48312 Demoboard Schematic 15 www.national.com LM48312 LM48312TL Demoboard Bill of Materials Designator C1 C2 C3, C4 R1, R2 LM48312TL Quantity 1 1 2 2 1 Description 10µF ±10% 16V Tantalum Capacitor (B Case) AVX TPSB106K016R0800 1µF ±10% 16V X5R Ceramic Capacitor (603) Panasonic ECJ-1VB1C105K 1µF ±10% 16V X7R Ceramic Capacitor (1206) Panasonic ECJ-3YB1C105K 20kΩ ± 5% 1/10W Thick Film Resistor (603) Vishay CRCW060320R0JNEA LM48312TL (9-Bump microSMD) www.national.com 16 LM48312 PC Board Layout 30110769 30110770 Top Silkscreen Top Layer 30110771 30110772 Layer 2 (GND) Layer 3 (VDD) 30110773 Bottom Layer 30110774 Bottom Silkscreen 17 www.national.com LM48312 Revision History Rev 1.0 1.01 1.02 Date 01/20/10 03/19/10 05/13/10 Initial WEB released. Text edits under the ENHANCED EMISSIONS section. Edited Table 2. Description www.national.com 18 LM48312 Physical Dimensions inches (millimeters) unless otherwise noted 9 Bump micro SMD Order Number LM48312TLE NS Package Number TLA09BCA X1 = 1.532±0.03mm X2 = 1.556±0.03mm X3 = 0.6±0.075mm 19 www.national.com LM48312 2.6W, Ultra-Low EMI, Filterless, Mono Class D Audio Power Amplifier with E2S Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: www.national.com Products Amplifiers Audio Clock and Timing Data Converters Interface LVDS Power Management Switching Regulators LDOs LED Lighting Voltage References PowerWise® Solutions Temperature Sensors PLL/VCO www.national.com/amplifiers www.national.com/audio www.national.com/timing www.national.com/adc www.national.com/interface www.national.com/lvds www.national.com/power www.national.com/switchers www.national.com/ldo www.national.com/led www.national.com/vref www.national.com/powerwise WEBENCH® Tools App Notes Reference Designs Samples Eval Boards Packaging Green Compliance Distributors Quality and Reliability Feedback/Support Design Made Easy Design Support www.national.com/webench www.national.com/appnotes www.national.com/refdesigns www.national.com/samples www.national.com/evalboards www.national.com/packaging www.national.com/quality/green www.national.com/contacts www.national.com/quality www.national.com/feedback www.national.com/easy www.national.com/solutions www.national.com/milaero www.national.com/solarmagic www.national.com/training Applications & Markets Mil/Aero PowerWise® Design University Serial Digital Interface (SDI) www.national.com/sdi www.national.com/wireless www.national.com/tempsensors SolarMagic™ THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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