LM5119 Wide Input Range Dual Synchronous Buck Controller
September 28, 2010
LM5119 Wide Input Range Dual Synchronous Buck Controller
General Description
The LM5119 is a dual synchronous buck controller intended for step-down regulator applications from a high voltage or widely varying input supply. The control method is based upon current mode control utilizing an emulated current ramp. Current mode control provides inherent line feed-forward, cycle-by-cycle current limiting and ease of loop compensation. The use of an emulated control ramp reduces noise sensitivity of the pulse-width modulation circuit, allowing reliable control of very small duty cycles necessary in high input voltage applications. The switching frequency is programmable from 50kHz to 750kHz. The LM5119 drives external high-side and low-side NMOS power switches with adaptive dead-time control. A user-selectable diode emulation mode enables discontinuous mode operation for improved efficiency at light load conditions. A high voltage bias regulator with automatic switch-over to external bias further improves efficiency. Additional features include thermal shutdown, frequency synchronization, cycle-by-cycle and hiccup mode current limit and adjustable line under-voltage lockout. The device is available in a power enhanced leadless LLP-32 package featuring an exposed die attach pad to aid thermal dissipation.
Features
■ Emulated peak current mode control ■ Wide operating range from 5.5V to 65V ■ Easily configurable for dual outputs or interleaved single ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■
output Robust 3.3A peak gate drive Switching frequency programmable to 750kHz Optional diode emulation mode Programmable output from 0.8V Precision 1.5% voltage reference Programmable current limit Hiccup mode overload protection Programmable soft-start Programmable line under-voltage lockout Automatic switch-over to external bias supply Channel2 enable logic input Thermal Shutdown Leadless LLP32 (5mm x 5mm) package
Typical Application
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© 2010 National Semiconductor Corporation
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LM5119
Connection Diagram
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Top View 32–Lead LLP
Order Number LM5119PSQ LM5119PSQX LM5119PSQE
Package Type LLP-32 LLP-32 LLP-32
NSC Package Drawing SQA32A SQA32A SQA32A
Supplied As 1000 Units on Tape and Reel 4500 Units on Tape and Reel 250 Units on Tape and Reel
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LM5119
Pin Descriptions
Pin 1 2 3 4 5 6 Name VCC1 LO1 PGND1 CSG1 CS1 RAMP1 Description Bias supply pin. Locally decouple to PGND1 using a low ESR/ESL capacitor located as close to controller as possible. Low side MOSFET gate drive output. Connect to the gate of the channel1 low-side synchronous MOSFET through a short, low inductance path. Power ground return pin for low side MOSFET gate driver. Connect directly to the low side of the channel1 current sense resistor. Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the channel1 current sense resistor. Current sense amplifier input. Connect to the high side of the channel1 current sense resistor. PWM ramp signal. An external resistor and capacitor connected between the SW1 pin, the RAMP1 pin and the AGND pin sets the channel1 PWM ramp slope. Proper selection of component values produces a RAMP1 signal that emulates the current in the buck inductor. An external capacitor and an internal 10µA current source set the ramp rate of the channel1 error amp reference. The SS1 pin is held low when VCC1 or VCC2 < 4.9V, UVLO < 1.25V or during thermal shutdown. Optional input that disables the internal VCC regulators when external biasing is supplied. If VCCDIS >1.25V, the internal VCC regulators are disabled. The externally supplied bias should be coupled to the VCC pins through a diode. VCCDIS has a 500kΩ pull-down resistor to ground to enable the VCC regulators when the pin is left floating. The pull-down resistor can be overridden by pulling VCCDIS above 1.25V with a resistor divider connected to the external bias supply. Feedback input and inverting input of the channel1 internal error amplifier. A resistor divider from the channel1 output to this pin sets the output voltage level. The regulation threshold at the FB1 pin is 0.8V. Output of the channel1 internal error amplifier. The loop compensation network should be connected between this pin and the FB1 pin. If the EN2 pin is low, channel2 will be disabled. Channel1 and all other functions remain active. The EN2 has a 50kΩ pull-up resistor to enable channel2 when the pin is left floating. Analog ground. Return for the internal 0.8V voltage reference and analog circuits. The internal oscillator is set with a single resistor between RT and AGND. The recommended maximum oscillator frequency is 1.5MHz which corresponds to a maximum switching frequency of 750kHz for either channel. The internal oscillator can be synchronized to an external clock by coupling a positive pulse into RT through a small coupling capacitor. The restart timer pin for an external capacitor that configures the hiccup mode current limiting. A capacitor on the RES pin determines the time the controller will remain off before automatically restarting in hiccup mode. The two regulator channels operate independently. One channel may operate in normal mode while the other is in hiccup mode overload protection. The hiccup mode commences when either channel experiences 256 consecutive PWM cycles with cycle-by-cycle current limiting. After this occurs, a 10µA current source charges the RES pin capacitor to the 1.25V threshold which restarts the overloaded channel. Output of the channel2 internal error amplifier. The loop compensation network should be connected between this pin and the FB2 pin. Feedback input and inverting input of the channel2 internal error amplifier. A resistor divider from the channel2 output to this pin sets the output voltage level. The regulation threshold at the FB2 pin is 0.8V. Logic input that enables diode emulation when in the low state. In diode emulation mode, the low side MOSFET is latched off for the remainder of the PWM cycle when the buck inductor current reverses direction (current flow from output to ground). When DEMB is high, diode emulation is disabled allowing current to flow in either direction through the low side MOSFET. A 50kΩ pull-down resistor internal to the LM5119 holds DEMB pin low and enables diode emulation if the pin is left floating. An external capacitor and an internal 10µA current source set the ramp rate of the channel2 error amp reference. The SS2 pin is held low when VCC1 or VCC2 < 4.9V, UVLO < 1.25V or during thermal shutdown.
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SS1
8
VCCDIS
9
FB1
10 11 12 13
COMP1 EN2 AGND RT
14
RES
15 16
COMP2 FB2
17
DEMB
18
SS2
LM5119
Pin 19
Name RAMP2
Description PWM ramp signal. An external resistor and capacitor connected between the SW2 pin, the RAMP2 pin and the AGND pin sets the channel2 PWM ramp slope. Proper selection of component values produces a RAMP2 signal that emulates the current in the buck inductor. Current sense amplifier input. Connect to the high side of the channel2 current sense resistor. Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the channel2 current sense resistor. Power ground return pin for low side MOSFET gate driver. Connect directly to the low side of the channel2 current sense resistor. Low side MOSFET gate drive output. Connect to the gate of the channel2 low-side synchronous MOSFET through a short, low inductance path. Bias supply pin. Locally decouple to PGND2 using a low ESR/ESL capacitor located as close to controller as possible. Switching node of the buck regulator. Connect to channel2 bootstrap capacitor, the source terminal of the high-side MOSFET and the drain terminal of the low-side MOSFET. High side MOSFET gate drive output. Connect to the gate of the channel2 high-side MOSFET through a short, low inductance path. High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel2 external bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high side MOSFET gate and should be placed as close to the controller as possible. Under-voltage lockout programming pin. If the UVLO pin is below 0.4V, the regulator will be in the shutdown mode with all function disabled. If the UVLO pin is greater than 0.4V and below 1.25V, the regulator will be in standby mode with the VCC regulators operational, the SS pins grounded and no switching at the HO and LO outputs. If the UVLO pin voltage is above 1.25V, the SS pins are allowed to ramp and pulse width modulated gate drive signals are delivered at the LO and HO pins. A 20µA current source is enabled when UVLO exceeds 1.25V and flows through the external UVLO resistors to provide hysteresis. Supply voltage input source for the VCC regulators. High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel1 external bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high side MOSFET gate and should be placed as close to controller as possible. High side MOSFET gate drive output. Connect to the gate of the channel1 high-side MOSFET through a short, low inductance path. Switching node of the buck regulator. Connect to channel1 bootstrap capacitor, the source terminal of the high-side MOSFET and the drain terminal of the low-side MOSFET. Exposed pad of LLP package. No internal electrical connections. Solder to the ground plane to reduce thermal resistance.
20 21 22 23 24 25 26 27
CS2 CSG2 PGND2 LO2 VCC2 SW2 HO2 HB2
28
UVLO
29 30
VIN HB1
31 32 EP
HO1 SW1 EP
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LM5119
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VIN to AGND SW1, SW2 to AGND HB1 to SW1, HB2 to SW2 VCC1, VCC2 to AGND (Note 2) FB1, FB2, DEMB, RES, VCCDIS, UVLO to AGND HO1 to SW1, HO2 to SW2 LO1, LO2 to AGND SS1, SS2 to AGND EN2, RT to AGND -0.3 to 75V -3.0 to 75V -0.3 to 15V -0.3 to 15V -0.3 to 15V -0.3 to HB+0.3V -0.3 to VCC+0.3V -0.3 to 7V -0.3 to 7V
CS1, CS2, CSG1, CSG2 to AGND PGND to AGND ESD Rating HBM (Note 3) Storage Temperature Junction Temperature
-0.3V to 0.3V -0.3V to 0.3V 2kV -55°C to +150°C +150°C (Note 1) 5.5V to 65V 5.5V to 14V 5.5V to 14V -40°C to +125°C
Operating Ratings
VIN VCC HB to SW Junction Temperature
Note: COMP1, COMP2, RAMP1, and RAMP2 are output pins. As such they are not specified to have an external voltage applied.
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature range of -40°C to +125°C. Unless otherwise specified, the following conditions apply: VIN = 36V, VCC = 8V, VCCDIS = 0V, EN2 = 5V, RT = 25kΩ, no load on LO and HO. Electrical characteristics are per channel where applicable. See (Note 4) and (Note 5). Parameter VIN Operating Current VCC1 Operating Current VCC2 Operating Current Conditions SS1 = SS2 = 0V VCCDIS = 2V, SS1 = SS2 = 0V IVCC VCCDIS = 2V, SS1 = SS2 = 0V VCCDIS = 2V, SS1 = SS2 = 0V UVLO = 0V, SS1 = SS2 = 0V 6.77 VIN = 6V, No external load VCC = 0V VCCDIS Rising VCCDIS = 0V Positive going VCC 4.7 5.9 25 1.19 Min Typ 6 400 3.9 1.4 18 7.6 5.95 40 1.25 0.07 -20 4.9 0.2 2.0 2.9 2.5 50 UVLO Rising UVLO = 1.4V 1.20 15 1.25 20 0.4 0.1 SS = 0V 7 10 10 13 1.29 25 1.5 5.2 1.29 Max 7.3 550 4.5 2.0 50 8.34 Units mA µA mA mA µA V V mA V V nA V V V V kΩ V µA V V µA Ω
Symbol VIN Supply IBIAS
ISHUTDOWN VIN Shutdown Current VCC Regulator (Note 6) VCC(REG) VCC Regulation VCC Regulation VCC Sourcing Current Limit VCCDIS Switch Threshold VCCDIS Switch Hysteresis VCCDIS Input Current VCC Under-voltage Threshold VCC Under-voltage Hysteresis EN2 Input VIL VIH UVLO UVLO Threshold UVLO Hysterisis Current UVLO Shutdown Threshold UVLO Shutdown Hysterisis Voltage Soft Start SS Current Source SS Pull Down RDSON EN2 Input Low Threshold EN2 Input High Threshold EN2 Input pull-up resistor
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LM5119
Symbol VREF
Parameter FB Reference Voltage FB Input Bias Current FB Disable Threshold COMP VOH COMP VOL
Conditions Measured at FB pin, FB = COMP FB = 0.8V Interleaved Threshold Isource = 3mA Isink = 3mA
Min 0.788
Typ 0.8 1 2.5
Max 0.812
Units V nA V V
Error Amplifier
2.8 0.31 80 3 220 320 100 180 430 2.5 100 200 480 1.25 3.2 4 220 530 430
V dB MHz ns ns kHz kHz V V ns
AOL fBW tHO(OFF) tON(min) Oscillator fSW1 fSW2
DC Gain Unity Gain Bandwidth Forced HO Off-time Minimum HO On-time Frequency 1 Frequency 2 RT Output Voltage RT Sync Positive Threshold Sync Pulse Minimum Width CRAMP = 50pF RT = 25kΩ RT = 10kΩ
PWM Comparators
Current Limit VCS(TH) Cycle-by-cycle Sense Voltage Threshold (CS - CSG) CS Bias Current Hiccup Mode Fault Timer RES IRES VRES VIL VIH RES current Source RES threshold DEMB Input Low Threshold DEMB Input High Threshold DEMB Input Pull-Down Resistance SW Zero Cross Threshold LO Gate Driver VOLL VOHL LO Low-state Output Voltage LO High-state Output Voltage LO Rise Time LO Fall Time IOHL IOLL VOLH VOHH Peak LO Source Current Peak LO Sink Current HO Low-state Output Voltage HO High-state Output Voltage ILO = 100mA ILO = -100mA, VOHL = VCC - VLO C-load = 1000pF C-load = 1000pF VLO = 0V VLO = VCC IHO = 100mA IHO = -100mA, VOHH = VHB - VHO HO Rise Time HO Fall Time IOHH IOLH Peak HO Source Current Peak HO Sink Current HB to SW Under-voltage HB DC Bias Current HB - SW = 8V C-load = 1000pF C-load = 1000pF VHO = 0V, SW = 0, HB = 8V VHO = VHB = 8V 6 5 2.2 3.3 3 70 100 ns ns A A V µA 0.1 0.17 6 5 2.5 3.3 0.11 0.18 0.19 0.27 0.18 0.26 V V ns ns A A V V 2.9 CRES Charging 1.20 9.7 1.25 2.0 2.6 50 -5 1.30 1.65 µA V V V kΩ mV RAMP = 0 CS = 0V 106 120 -70 256 134 -95 mV µA Cycles
Diode Emulation
HO Gate Driver
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LM5119
Symbol
Parameter LO Fall to HO Rise Delay HO Fall to LO Rise Delay
Conditions No load No load Rising
Min
Typ 70 60 165 25 40 4
Max
Units ns ns °C °C °C/W °C/W
SWITCHING CHARACTERISTICS
THERMAL TSD θJA θJC Thermal Shutdown Thermal Shutdown Hysteresis Junction to Ambient Junction to Case
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics Table. Note 2: These pins must not exceed VIN. Note 3: The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. Note 4: All limits are guaranteed. All electrical characteristics having room temperature limits are tested during production at TA = 25°C. All hot and cold limits are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control. Note 5: Typical specifications represent the most likely parametric normal at 25°C operation. Note 6: Per VCC Regulator
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LM5119
Typical Performance Characteristics
HO Peak Driver Current vs Output Voltage LO Peak Driver Current vs Output Voltage
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Driver Dead Time vs VCC
Driver Dead Time vs Temperature
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VCC vs IVCC
Switching Frequency vs RT
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LM5119
Error Amp Gain and Phase vs Frequency
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LM5119
Block Diagram
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FIGURE 1. Block Diagram
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LM5119
Detailed Operating Description
The LM5119 high voltage switching regulator features all of the functions necessary to implement an efficient dual channel buck regulator that operates over a very wide input voltage range. The LM5119 may be configured as two independent regulators or as a single high current regulator with two interleaved channels. This easy to use regulator integrates highside and low-side MOSFET drivers capable of supplying peak currents of 2.5 Amps (VCC = 8V). The regulator control method is based on current mode control utilizing an emulated current ramp. Emulated peak current mode control provides inherent line feed-forward, cycle-by-cycle current limiting and ease of loop compensation. The use of an emulated control ramp reduces noise sensitivity of the pulse-width modulation circuit, allowing reliable processing of the very small duty cycles necessary in high input voltage applications. The switching frequency is user programmable from 50kHz to 750kHz. An oscillator/synchronization pin allows the operating frequency to be set by a single resistor or synchronized to an external clock. An under-voltage lockout and channel2 enable pin allows either both regulators to be disabled or channel2 to be disabled with full operation of channel1. Fault protection features include current limiting, thermal shutdown and remote shutdown capability. The under-voltage lockout input enables both channels when the input voltage reaches a user selected threshold and provides a very low quiescent shutdown current when pulled low. The LLP32 package features an exposed pad to aid in thermal dissipation.
The VCC regulator series pass transistor includes a diode between VCC and VIN that should not be forward biased in normal operation. If the external bias winding can supply VCC greater than VIN, an external blocking diode is required from the input power supply to the VIN pin to prevent the external bias supply from passing current to the input supply through the VCC pins. For VOUT between 6V and 14.5V, VOUT can be connected directly to VCC through a diode. For VOUT < 6V, a bias winding on the output inductor can be added as shown in Figure 2.
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FIGURE 2. VCC Bias Supply with Additional Inductor Winding In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute maximum voltage rating of 75V. During line or load transients, voltage ringing on the VIN line that exceeds the Absolute Maximum Rating can damage the IC. Both careful PC board layout and the use of quality bypass capacitors located close to the VIN and AGND pins are essential.
High Voltage Start-Up Regulator
The LM5119 contains two internal high voltage bias regulators, VCC1 and VCC2, that provide the bias supply for the PWM controllers and gate drive for the MOSFETs of each regulator channel. The input pin (VIN) can be connected directly to an input voltage source as high as 65 volts. The outputs of the VCC regulators are set to 7.6V. When the input voltage is below the VCC set-point level, the VCC output will track the VIN with a small dropout voltage. If VCC1 is in an under voltage condition, channel2 will be disabled. This interdependence is necessary to prevent channel2 from running open loop in the single output interleaved mode when the channel2 error amplifier is disabled (if either VCC is in UV, both channels are disabled). The outputs of the VCC regulators are current limited at 25mA (minimum) output capability. Upon power-up, the regulators source current into the capacitors connected to the VCC pins. When the voltage at the VCC pins exceed 4.9V and the UVLO pin is greater than 1.25V, both channels are enabled and a soft-start sequence begins. Both channels remain enabled until either VCC pin falls below 4.7V, the UVLO pin falls below 1.25V or the die temperature exceeds the thermal limit threshold. When operating at higher input voltages the bias power dissipation within the controller can be excessive. An output voltage derived bias supply can be applied to a VCC pins to reduce the IC power dissipation. The VCCDIS input can be used to disable the internal VCC regulators when external biasing is supplied. If VCCDIS >1.25V, the internal VCC regulators are disabled. The externally supplied bias should be coupled to the VCC pins through a diode, preferably a Schottky (low forward voltage). VCCDIS has a 500kΩ internal pulldown resistance to ground for normal operation with no external bias. The internal pull-down resistance can be overridden by pulling VCCDIS above 1.25V through a resistor divider connected to an external bias supply.
UVLO
The LM5119 contains a dual level under-voltage lockout (UVLO) circuit. When the UVLO pin is less than 0.4V, the LM5119 is in shutdown mode. The shutdown comparator provides 100mV of hysteresis to avoid chatter during transitions. When the UVLO pin voltage is greater than 0.4V but less than 1.25V, the controller is in standby mode. In the standby mode the VCC bias regulators are active but the controller outputs are disabled. This feature allows the UVLO pin to be used as a remote enable/disable function. When the VCC outputs exceed their respective under-voltage thresholds (4.9V) and the UVLO pin voltage is greater than 1.25V, the outputs are enabled and normal operation begins. An external set-point voltage divider from the VIN to GND is used to set the minimum VIN operating voltage of the regulator. The divider must be designed such that the voltage at the UVLO pin will be greater than 1.25V when the input voltage is in the desired operating range. UVLO hysteresis is accomplished with an internal 20μA current source that is switched on or off into the impedance of the set-point divider. When the UVLO pin voltage exceeds 1.25V threshold, the current source is activated to quickly raise the voltage at the UVLO pin. When the UVLO pin voltage falls below the 1.25V threshold, the current source is turned off causing the voltage at the UVLO pin to quickly fall. The UVLO pin should not be left floating.
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LM5119
Enable 2
The LM5119 contains an enable function allowing shutdown control of channel2, independent of channel1. If the EN2 pin is pulled below 2.0V, channel2 enters shutdown mode. If the EN2 input is greater than 2.5V, channel2 returns to normal operation. An internal 50kΩ pull-up resistor on the EN2 pin allows this pin to be left floating for normal operation. The EN2 input can be used in conjunction with the UVLO pin to sequence the two regulator channels. If EN2 is held low as the UVLO pin increases to a voltage greater than the 1.25V UVLO threshold, channel1 will begin operation while channel2 remains off. Both channels become operational when the UVLO, EN2, VCC1, and VCC2 pins are above their respective operating thresholds. Either channel of the LM5119 can also be disabled independently by pulling the corresponding SS pin to AGND.
noise reducing high frequency pole. The PWM comparator compares the emulated current sense signal from the RAMP generator to the error amplifier output voltage at the COMP pin. Only one error amplifier is required when configuring the controller as a two channel, single output interleaved regulator. For these applications, the channel1 error amplifier (FB1, COMP1) is configured as the master error amplifier. The channel2 error amplifier must be disabled by connecting the FB2 pin to the VCC2 pin. When configured in this manner the output of the channel2 error amplifier (COMP2) will be disabled and have a high output impedance. To complete the interleaved configuration the COMP1 and the COMP2 pins should be connected together to facilitate PWM control of channel2 and current sharing between channels.
Ramp Generator
The ramp signal used in the pulse width modulator for current mode control is typically derived directly from the buck switch current. This switch current corresponds to the positive slope portion of the inductor current. Using this signal for the PWM ramp simplifies the control loop transfer function to a single pole response and provides inherent input voltage feed-forward compensation. The disadvantage of using the buck switch current signal for PWM control is the large leading edge spike due to circuit parasitics that must be filtered or blanked. Also, the current measurement may introduce significant propagation delays. The filtering, blanking time and propagation delay limit the minimum achievable pulse width. In applications where the input voltage may be relatively large in comparison to the output voltage, controlling small pulse widths and duty cycles are necessary for regulation. The LM5119 utilizes a unique ramp generator which does not actually measure the buck switch current but rather reconstructs the signal. Representing or emulating the inductor current provides a ramp signal to the PWM comparator that is free of leading edge spikes and measurement or filtering delays. The current reconstruction is comprised of two elements; a sample-and-hold DC level and the emulated inductor current ramp as shown in Figure 3.
Oscillator and Sync Capability
The LM5119 switching frequency is set by a single external resistor connected between the RT pin and the AGND pin (RT). The resistor should be located very close to the device and connected directly to the pins of the IC (RT and AGND). To set a desired switching frequency (fSW) of each channel, the resistor can be calculated from the following equation:
(1) Where RT is in ohms and fSW is in Hertz. The frequency fSW is the output switching frequency of each channel. The internal oscillator runs at twice the switching frequency and an internal frequency divider interleaves the two channels with 180° phase shift between PWM pulses at the HO pins. The RT pin can be used to synchronize the internal oscillator to an external clock. The internal oscillator can be synchronized by AC coupling a positive edge into the RT pin. The voltage at the RT pin is nominally 1.25V and the voltage at the RT pin must exceed 4V to trip the internal synchronization pulse detector. A 5V amplitude signal and 100pF coupling capacitor are recommended. Synchronizing at greater than twice the free-running frequency may result in abnormal behavior of the pulse width modulator. Also, note that the output switching frequency of each channel will be one-half the applied synchronization frequency.
Error Amplifiers and PWM Comparators
Each of the two internal high-gain error amplifiers generates an error signal proportional to the difference between the regulated output voltage and an internal precision reference (0.8V). The output of each error amplifier is connected to the COMP pin allowing the user to provide loop compensation components. Generally a Type II network is recommended. This network creates a pole at 0Hz, a mid-band zero, and a
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FIGURE 3. Composition of Current Sense Signal
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LM5119
The sample-and-hold DC level is derived from a measurement of the recirculating current flowing through the current sense resistor. The voltage across the sense resistor is sampled and held just prior to the onset of the next conduction interval of the buck switch. The current sensing and sampleand-hold provide the DC level of the reconstructed current signal. The positive slope inductor current ramp is emulated by an external capacitor connected from RAMP pin to AGND and a series resistor connected between SW and RAMP. The ramp resistor should not be connected to VIN directly because the RAMP pin voltage rating could be exceeded under high VIN conditions. The ramp created by the external resistor and capacitor will have a slope proportional to the rising inductor current plus some additional slope required for slope compensation. Connecting the RAMP pin resistor to SW provides optimum slope compensation with a RAMP capacitor slope that is proportional to VIN. This “adaptive slope compensation” eliminates the requirement for additional slope compensation circuitry with high output voltage set points and frees the user from additional concerns in this area. The emulated ramp signal is approximately linear and the ramp slope is given by:
(5) Choose either CRAMP or RRAMP and use (5) to calculate the other component. The difference between the average inductor current and the DC value of the sampled inductor current can cause instability for certain operating conditions. This instability is known as sub-harmonic oscillation, which occurs when the inductor ripple current does not return to its initial value by the start of next switching cycle. Sub-harmonic oscillation is normally characterized by alternating wide and narrow pulses at the switch node. The ramp equation above contains the optimum amount of slope compensation, however extra slope compensation is easily added by selecting a lower value for RRAMP or CRAMP.
Current Limit
The LM5119 contains a current limit monitoring scheme to protect the regulator from possible over-current conditions. When set correctly, the emulated current signal is proportional to the buck switch current with a scale factor determined by the current limit sense resistor, RS, and current sense amplifier gain. The emulated signal is applied to the current limit comparator. If the emulated ramp signal exceeds 1.2V, the present cycle is terminated (cycle-by-cycle current limiting). Shown in Figure 4 is the current limit comparator and a simplified current measurement schematic. In applications with small output inductance and high input voltage, the switch current may overshoot due to the propagation delay of the current limit comparator. If an overshoot should occur, the sample-and-hold circuit will detect the excess recirculating current before the buck switch is turned on again. If the sample-and-hold DC level exceeds the internal current limit threshold, the buck switch will be disabled and skip pulses until the current has decayed below the current limit threshold. This approach prevents current runaway conditions due to propagation delays or inductor saturation since the inductor current is forced to decay to a controlled level following any current overshoot.
(2) The factor of 10 in equation (2) corresponds to the internal current sense amplifier gain of the LM5119. The K factor is a constant which adds additional slope for robust pulse-width modulation control at lower input voltages. In practice this constant can be varied from 1 to 3. RS is the external sense resistor value. The voltage on the ramp capacitor is given by:
(3)
(4) The approximation is the first order term in a Taylor Series expansion of the exponential and is valid since tPERIOD is small relative to the RAMP pin R-C time constant. Multiplying (2) by tPERIOD to convert the slope to a peak voltage, and then equating (2) with (4) allows us to solve for CRAMP:
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FIGURE 4. Current Limit and Ramp Circuit
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LM5119
Hiccup Mode Current Limiting
To further protect the regulator during prolonged current limit conditions, an internal counter counts the PWM clock cycles during which cycle-by-cycle current limiting occurs. When the counter detects 256 consecutive cycles of current limiting, the regulator enters a low power dissipation hiccup mode with the HO and LO outputs disabled. The restart timer pin, RES, and an external capacitor configure the hiccup mode current limiting. A capacitor on the RES pin (CRES) determines the time the controller will remain in low power standby mode before automatically restarting. A 10µA current source charges the RES pin capacitor to the 1.25V threshold which restarts the overloaded channel. The two regulator channels operate independently. One channel may operate normally while the other is in the hiccup mode overload protection. The hiccup mode commences when either channel experiences 256 consecutive PWM cycles with cycle-by-cycle current limiting. If that occurs, the overloaded channel will turn off and remain off for the duration of the RES pin timer. The hiccup mode current limiting function can be disabled. The RES configuration is latched during initial power-up when UVLO is above 1.25V and VCC1 and VCC2 are above their UV thresholds, determining hiccup or non-hiccup current limiting. If the RES pin is tied to VCC at initial power-on, hiccup current limit is disabled.
HO and LO Output Drivers
The LM5119 contains a high current, high-side driver and associated high voltage level shift to drive the buck switch of each regulator channel. This gate driver circuit works in conjunction with an external diode and bootstrap capacitor. A 0.1µF or larger ceramic capacitor, connected with short traces between the HB pin and SW pin, is recommended. During the off-time of the high-side MOSFET, the SW pin voltage is approximately 0V and the bootstrap capacitor charges from VCC through the external bootstrap diode. When operating with a high PWM duty cycle, the buck switch will be forced off each cycle for 320ns to ensure that the bootstrap capacitor is recharged. The LO and HO outputs are controlled with an adaptive deadtime methodology which insures that both outputs are never enabled at the same time. When the controller commands HO to be enabled, the adaptive dead-time logic first disables LO and waits for the LO voltage to drop. HO is then enabled after a small delay. Similarly, the LO turn-on is disabled until the HO voltage has discharged. This methodology insures adequate dead-time for any size MOSFET. Care should be exercised in selecting an output MOSFET with the appropriate threshold voltage, especially if VCC is supplied from the regulator output. During startup at low input voltages the MOSFET threshold should be lower than the 4.9V VCC under-voltage lockout threshold. Otherwise, there may be insufficient VCC voltage to completely turn on the MOSFET as VCC under-voltage lockout is released during startup. If the buck switch MOSFET gate drive is not sufficient, the regulator may not start or it may hang up momentarily in a high power dissipation state. This condition can be avoided by selecting a MOSFET with a lower threshold voltage or if VCC is supplied from an external source higher than the output voltage. If the minimum input voltage programmed by the UVLO pin resistor divider is above the VCC regulation level, this precaution is of no concern.
Soft-Start
The soft-start feature allows the regulator to gradually reach the steady state operating point, thus reducing start-up stresses and surges. The LM5119 will regulate the FB pin to the SS pin voltage or the internal 0.8V reference, whichever is lower. At the beginning of the soft-start sequence when SS = 0V, the internal 10µA soft-start current source gradually increases the voltage on an external soft-start capacitor (CSS) connected to the SS pin resulting in a gradual rise of the FB and output voltages. Either regulator channel of the LM5119 can be disabled by pulling the corresponding SS pin to AGND.
Maximum Duty Cycle
When operating with a high PWM duty cycle, the buck switch will be forced off each cycle for 320ns to ensure the boot-strap capacitor is recharged and to allow time to sample and hold the current in the low side MOSFET. This forced off-time limits the maximum duty cycle of the controller. When designing a regulator with high switching frequency and high duty cycle requirements, a check should be made of the required maximum duty cycle (including losses) against the graph shown in Figure 5. The actual maximum duty cycle will vary with the operating frequency as follows: (6)
Diode Emulation
A fully synchronous buck regulator implemented with a freewheel MOSFET rather than a diode has the capability to sink current from the output in certain conditions such as light load, over-voltage or pre-bias startup. The LM5119 provides a diode emulation feature that can be enabled to prevent reverse (drain to source) current flow in the low side free-wheel MOSFET. When configured for diode emulation, the low side MOSFET is disabled when reverse current flow is detected. The benefit of this configuration is lower power loss at no load or light load conditions and the ability to turn on into a prebiased output without discharging the output. The diode emulation mode allows for start-up into pre-biased loads, since it prevents reverse current flow as the soft-start capacitor charges to the regulation level during startup. The negative effect of diode emulation is degraded light load transient response times. Enabling the diode emulation feature is recommended and allows discontinuous conduction operation. The diode emulation feature is configured with the DEMB pin. To enable diode emulation, connect the DEMB pin to ground or leave the pin floating. If continuous conduction operation is desired, the DEMB pin should be tied to either VCC1 or VCC2.
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A standard value or 22.1kΩ was chosen for RT. The internal oscillator frequency is twice the switching frequency and is about 460kHz. OUTPUT INDUCTOR The inductor value is determined based on the operating frequency, load current, ripple current and the input and output voltages.
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FIGURE 5. Maximum Duty Cycle vs Switching Frequency
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Thermal Protection
Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction temperature is exceeded. When activated, typically at 165°C, the controller is forced into a low power reset state, disabling the output driver and the VCC bias regulators. This feature is designed to prevent catastrophic failures from overheating and destroying the device.
FIGURE 6. Inductor Current Knowing the switching frequency, maximum ripple current (IPP), maximum input voltage and the nominal output voltage (VOUT), the inductor value can be calculated:
Application Information
EXTERNAL COMPONENTS The procedure for calculating the external components is illustrated with the following design example. Only the values for the 5V output are calculated since the procedure is the same for the 10V output. The circuit shown in Figure 14 is configured for the following specifications: • CH1 output voltage, VOUT1 = 10.0V • CH2 output voltage, VOUT2 = 5.0V • CH1 maximum load current, IOUT1 = 4A • CH2 maximum load current, IOUT2 = 8A • Minimum input voltage, VIN(MIN) = 14V • Maximum input voltage, VIN(MAX) = 55V • Switching frequency, fSW = 230kHz Some component values were chosen as a compromise between the 10V and 5V outputs to allow identical components to be used on both outputs. This design can be reconfigured in a dual-channel interleaved configuration with a single 10V output which requires identical power channels. TIMING RESISTOR RT sets the switching frequency of each regulator channel. Generally, higher frequency applications are smaller but have higher losses. Operation at 230kHz was selected for this example as a reasonable compromise between small size and high efficiency. The value of RT for 230kHz switching frequency can be calculated as follows:
(8) The maximum ripple current occurs at the maximum input voltage. Typically, IPP is 20% to 40% of the full load current. When operating in the diode emulation mode configuration, the maximum ripple current should be less than twice the minimum load current. For full synchronous operation, higher ripple current is acceptable. Higher ripple current allows for a smaller inductor size, but places more of a burden on the output capacitor to smooth the ripple current. For this example, a ripple current of 15% of 8A was chosen as a compromise for the 10V output.
(9) The nearest standard value of 15μH was chosen for L. Using the value of 15µH for L, calculate IPP again. This step is necessary if the chosen value of L differs significantly from the calculated value.
(10)
(11) CURRENT SENSE RESISTOR Before determining the value of current sense resistor (RS), it is valuable to understand the K factor, which is the ramp slope multiple chosen for slope compensation. The K factor can be varied from 1 to 3 in practice and is defined as:
(7)
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(12) The performance of the converter will vary depending on the selected K value (See Table 1). For this example, 2.5 was chosen as the K factor to minimize the power loss in sense resistor RS and the cross-talk between channels. Crosstalk between the two regulators under certain conditions may be observed on the output as switch jitter. The maximum output current capability (IOUT(MAX)) should be 20~50% higher than the required output current, (8A at VOUT2) to account for tolerances and ripple current. For this example, 120% of 8A was chosen (9.6A). The current sense resistor value can be calculated as:
Where tON(MIN) is the minimum HO on-time which is nominally 100ns. The chosen inductor must be evaluated for this condition, especially at elevated temperature where the saturation current rating of the inductor may drop significantly. At the maximum input voltage with a shorted output, the valley current must fall below VCS(TH) / RS before the high-side MOSFET is allowed to turn on. RAMP RESISTOR AND RAMP CAPACITOR The value of ramp capacitor (CRAMP) should be less than 2nF to allow full discharge between cycles by the discharge switch internal to the LM5119. A good quality, thermally stable ceramic capacitor with 5% or less tolerance is recommended. For this design the value of CRAMP was set at the standard capacitor value of 820pF. With the inductor, sense resistor and the K factor selected, the value of the ramp resistor (RRAMP) can be calculated as:
(13)
(19)
(14) Where VCS(TH) is the current limit threshold voltage (120mV). A value of 10mΩ was chosen for RS. The sense resistor must be rated to handle the power dissipation at maximum input voltage when current flows through the free-wheel MOSFET for the majority of the PWM cycle. The maximum power dissipation of RS can be calculated:
(20) The standard value of 73.2kΩ was selected. OUTPUT CAPACITORS The output capacitors smooth the inductor ripple current and provide a source of charge during transient loading conditions. For this design example, a 470µF electrolytic capacitor with 10mΩ ESR was selected as the main output capacitor. The fundamental component of the output ripple voltage is approximated as:
(15) (21) (16) During output short condition, the worst case peak inductor current is limited to: (22) (23) (17) Two 22µF low ERS / ESL ceramic capacitors are placed in parallel with the 470µF electrolytic capacitor, to further reduce the output voltage ripple and spikes.
(18) TABLE 1. Performance Variation by K Factor K3
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INPUT CAPACITORS The regulator input supply voltage typically has high source impedance at the switching frequency. Good quality input capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch current during the ontime. When the buck switch turns on, the current into the buck switch steps to the valley of the inductor current waveform, ramps up to the peak value, and then drops to the zero at turnoff. The input capacitance should be selected for RMS current rating and minimum ripple voltage. A good approximation for the required ripple current rating necessary is IRMS > IOUT / 2. Seven 2.2μF ceramic capacitors were used for each channel. With ceramic capacitors, the input ripple voltage will be triangular. The input ripple voltage with one channel operating is approximately:
VCC CAPACITOR The primary purpose of the VCC capacitor (CVCC) is to supply the peak transient currents of the LO driver and bootstrap diode as well as provide stability for the VCC regulator. These peak currents can be several amperes. The recommended value of CVCC should be no smaller than 0.47µF, and should be a good quality, low ESR, ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients caused by trace inductance. A value of 1μF was selected for this design. BOOTSTRAP CAPACITOR The bootstrap capacitor between the HB and SW pins supplies the gate current to charge the high-side MOSFET gate at each cycle’s turn-on and recovery charge for the bootstrap diode. These current peaks can be several amperes. The recommended value of the bootstrap capacitor is at least 0.1μF, and should be a good quality, low ESR, ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients caused by trace inductance. The absolute minimum value for the bootstrap capacitor is calculated as:
(24)
(25) The ripple voltage of the input capacitors will be reduced significantly with dual channel operation since each channel operates 180 degrees out of phase from the other. Capacitors connected in parallel should be evaluated for RMS current rating. The current will split between the input capacitors based on the relative impedance of the capacitors at the switching frequency. When the converter is connected to an input power source, a resonant circuit is formed by the line inductance and the input capacitors. To minimize overshoot make CIN > 10 x LIN. The characteristic source impedance (ZS) and resonant frequency (fS) are:
(30) Qg is the high-side MOSFET gate charge and ΔVHB is the tolerable voltage droop on CHB, which is typically less than 5% of VCC. A value of 0.47μF was selected for this design. SOFT START CAPACITOR The capacitor at the SS pin (CSS) determines the soft-start time (tSS), which is the time for the output voltage to reach the final regulated value. The value of CSS for a given time is determined from:
(26)
(31) For this application, a value of 0.047μF was chosen for a softstart time of 3.8ms. RESTART CAPACITOR The restart pin sources 10µA into the external restart capacitor (CRES). The value of the restart capacitor is given by:
(27) Where L IN is the inductance of the input wire. The converter exhibits negative input impedance which is lowest at the minimum input voltage:
(32) (28) The damping factor for the input filter is given by: Where tRES is the time the LM5119 remains off before a restart attempt in hiccup mode current limiting. For this application, a value of 0.47µF was chosen for a restart time of 59ms. OUTPUT VOLTAGE DIVIDER RFB1 and RFB2 set the output voltage level, the ratio of these resistors is calculated from:
(29) Where RIN is the input wiring resistance and ESR is the equivalent series resistance of the input capacitors. When δ = 1, the input filter is critically damped. This may be difficult to achieve with practical component values. With δ < 0.2, the input filter will exhibit significant ringing. If δ is zero or negative, there is not enough resistance in the circuit and the input filter will sustain an oscillation. When operating near the minimum input voltage, a bulk aluminum electrolytic capacitor across CIN may be needed to damp the input for a typical bench test setup.
(33) 1.33kΩ was chosen for RFB1 in this design which results in a RFB2 value of 6.98kΩ for VOUT2 of 5V. A reasonable guide is to select the value of RFB1 in the range between 500Ω and 10kΩ. The value of RFB1 should be large enough to keep the total divider power dissipation small.
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MOSFET SELECTION Selection of the power MOSFETs is governed by the same tradeoffs as switching frequency. Breaking down the losses in the high-side and low-side MOSFETs is one way to compare the relative efficiencies of different devices. When using discrete SO-8 MOSFETs, generally the output current capability range is 2A to 10A. Losses in the power MOSFETs can be broken down into conduction loss, gate charging loss, and switching loss. Conduction loss PDC is approximately: (36)
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FIGURE 7. Feedback Configuration UVLO DIVIDER The UVLO threshold is internally set to 1.25V at the UVLO pin. The LM5119 is enabled when the system input voltage VIN causes the UVLO pin to exceed the threshold voltage of 1.25V. When the UVLO pin voltage is below the threshold, the internal 20μA current source is disabled. When the UVLO pin voltage exceeds the 1.25V threshold, the 20μA current source is enabled causing the UVLO pin voltage to increase, providing hysteresis. The values of RUV1 and RUV2 can be determined from the following equation:
(37) Where, D is the duty cycle and the factor of 1.3 accounts for the increase in MOSFET on-resistance due to heating. Alternatively, the factor of 1.3 can be eliminated and the high temperature on-resistance of the MOSFET can be estimated using the RDS(ON) vs Temperature curves in the MOSFET datasheet. Gate charging loss, PGC, results from the current driving the gate capacitance of the power MOSFETs and is approximated as: (38) Where Qg refers to the total gate charge of an individual MOSFET, and ‘n’ is the number of MOSFETs. Gate charge loss differs from conduction and switching losses in that the actual dissipation occurs in the LM5119 and not in the MOSFET itself. Further loss in the LM5119 is incurred if the gate driving current is supplied by the internal linear regulator. In this example, VCC is supplied from the 10V output through a diode to minimize the loss of the internal linear regulator. Switching loss occurs during the brief transition period as the MOSFET turns on and off. During the transition period both current and voltage are present in the channel of the MOSFET. The switching loss can be approximated as: (39) Where tR and tF are the rise and fall times of the MOSFET. The rise and fall times are usually mentioned in the MOSFET datasheet or can be empirically observed with an oscilloscope. Switching loss is calculated for the high-side MOSFET only. Switching loss in the low-side MOSFET is negligible because the body diode of the low-side MOSFET turns on before the MOSFET itself, minimizing the voltage from drain to source before turn-on. For this example, the maximum drain-to-source voltage applied to either MOSFET is 55V.The selected MOSFETs must be able to withstand 55V plus any ringing from drain to source, and be able to handle at least the VCC voltage plus any ringing from gate to source. A good choice of MOSFET for the 55V input design example is the PSMN5R5. It has an RDS(ON) of 5.2mΩ and total gate charge of 56nC. In applications where a high step-down ratio is maintained in normal operation, efficiency may be optimized by choosing a high-side MOSFET with lower Qg, and low-side MOSFET with lower RDS(ON). MOSFET SNUBBER A resistor-capacitor snubber network across the low-side MOSFET reduces ringing and spikes at the switching node. Excessive ringing and spikes can cause erratic operation and couple noise to the output. Selecting the values for the snubber is best accomplished through empirical methods. First, make sure the lead lengths for the snubber connections are very short. Start with a resistor value between 5 and 50Ω. Increasing the value of the snubber capacitor results in more
(34)
(35) VHYS is the desired UVLO hysteresis at VIN, and VIN in the second equation is the desired UVLO release (turn-on) voltage. For example, if it is desired for the LM5119 to be enabled when VIN reaches 13.5V, and the desired hysteresis is 1.2V, then RUV2 should be set to 60kΩ and RUV1 should be set to 6.12kΩ. For this application RUV2 was selected to be 60.4kΩ, RUV1was selected to be 6.19kΩ. The LM5119 can be remotely shutdown by taking the UVLO pin below 0.4V with an external open collector or open drain device. The outputs and the VCC regulator are disabled in shutdown mode. Capacitor CFT provides filtering for the divider. A value of 100pF was chosen for CFT. The voltage at the UVLO pin should never exceed 15V when using the external set-point divider. It may be necessary to clamp the UVLO pin at high input voltages.
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FIGURE 8. UVLO Configuration
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damping, but higher snubber losses. Select a minimum value for the snubber capacitor that provides adequate damping of the spikes on the switch waveform at high load. A snubber may not be necessary with an optimized layout. ERROR AMPLIFIER COMPENSATION RCOMP, CCOMP and CHF configure the error amplifier gain characteristics to accomplish a stable voltage loop gain. One advantage of current mode control is the ability to close the loop with only two feedback components, RCOMP and CCOMP. The voltage loop gain is the product of the modulator gain and the error amplifier gain. For the 5V output design example, the modulator is treated as an ideal voltage-to-current converter. The DC modulator gain of the LM5119 can be modeled as:
x RCOMP x CCOMP) to be about 1.1kHz. Increasing RCOMP, while proportionally decreasing CCOMP, increases the error amp gain. Conversely, decreasing RCOMP while proportionally increasing CCOMP, decreases the error amp gain. For the design example CCOMP was selected as 6800pF and RCOMP was selected as 36.5kΩ. These values configure the compensation network zero at 640Hz. The error amp gain at frequencies greater than fZEA is: RCOMP / RFB2, which is approximately 5.22 (14.3dB).
(40) Note that A is the gain of the current sense amplifier which is 10 in the LM5119. The dominant low frequency pole of the modulator is determined by the load resistance (RLOAD) and output capacitance (COUT). The corner frequency of this pole is:
(41) For RLOAD = 5V / 8A = 0.625Ω and COUT = 514μF (effective) then fP(MOD) = 496Hz DC Gain(MOD) = 0.625Ω / (10 x 10mΩ) = 6.25 = 15.9dB For the 5.0V design example, the modulator gain vs. frequency characteristic is shown in Figure 9.
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FIGURE 10. Error Amplifier Gain and Phase The overall voltage loop gain can be predicted as the sum (in dB) of the modulator gain and the error amp gain.
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FIGURE 9. Modulator Gain and Phase Components RCOMP and CCOMP configure the error amplifier as a Type II configuration. The DC gain of the amplifier is 80dB with a pole at 0Hz and a zero at fZEA = 1 / (2π x RCOMP x CCOMP). The error amplifier zero cancels the modulator pole leaving a single pole response at the crossover frequency of the voltage loop. A single pole response at the crossover frequency yields a very stable loop with 90 degrees of phase margin. For the design example, a conservative target loop bandwidth (crossover frequency) of 11kHz was selected. The compensation network zero (fZEA) should be selected at least an order of magnitude less than the target crossover frequency. This constrains the product of RCOMP and CCOMP for a desired compensation network zero 1 / (2π
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FIGURE 11. Overall Voltage Loop Gain and Phase If a network analyzer is available, the modulator gain can be measured and the error amplifier gain can be configured for the desired loop transfer function. If the K factor is between 2 and 3, the stability should be checked with the network analyzer. If a network analyzer is not available, the error amplifier compensation components can be designed with the guidelines given. Step load transient tests can be performed to verify acceptable performance. The step load goal is minimum overshoot with a damped response. CHF can be added to the compensation network to decrease noise susceptibility of the error amplifier. The value of CHF must be sufficiently small since the addition of this capacitor adds a pole in the error amplifier transfer function. This pole must be well be-
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yond the loop crossover frequency. A good approximation of the location of the pole added by CHF is: fP2 = fZEA x CCOMP / CHF. The value of CHF was selected as 100pF for the design example. MISCELLANEOUS FUNCTIONS EN2 is left floating which allows channel2 to always remain enabled. If EN2 is pulled below 2V, channel2 is disabled. The DEMB pin is left floating since this design uses diode emulation. For fully synchronous (continuous conduction) operation, connect the DEMB to a voltage greater than 2.6V. VCCDIS is left floating to enable the internal VCC regulators. To disable the internal VCC regulators, connect this pin to a voltage greater than 1.25V. INTERLEAVED OPERATION Interleaved operation can offer many advantages in single output, high current applications. The output power path is split between two identical channels reducing the current in each channel by one-half. Ripple current reduction in the output capacitors is reduced significantly since each channel operates 180 degrees out of phase from the other. Ripple reduction is greatest at 50% duty cycle and decreases as the duty cycle varies away from 50%. Refer to Figure 12 to estimate the ripple current reduction. Also, the effective ripple in the input and output capacitors occurs at twice the frequency of a single channel design due to the combining of the two channels. All of these factors are advantageous in managing the higher currents and their effects in a high power design.
inductor in a two phase design, not the ripple calculated for a single phase design of the same output power. It can be observed that operation around 50% duty cycle results in almost complete ripple attenuation in the output capacitor. Figure 12 can be used to calculate the amount of ripple attenuation in the output capacitors.
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FIGURE 13. Normalized Input Capacitor RMS Ripple Current vs. Duty Cycle Figure 13 illustrates the ripple current reduction in the input capacitors due to interleaving. As with the output capacitors, there is near perfect ripple reduction near 50% duty cycle. This plot can be used to calculate the ripple in the input capacitors at any duty cycle. In designs with large duty cycle swings, use the worst case ripple reduction for the design. To configure the LM5119 for interleaved operation, connect COMP1 and COMP2 pins together at the IC. Connecting the FB2 pin to VCC2 pin will disable the channel2 error amplifier with a high output impedance at COMP2. Connect the compensation network between FB1 and the common COMP pins. Connect the two power stages together at the output capacitors. Finally use the plots in Figure 12 and Figure 13 along with the duty cycle range to determine the amount of output and input capacitor ripple reduction. Frequently more capacitance than necessary is used in a design just to meet ESR requirements. Reducing the capacitance based solely on ripple reduction graphs alone may violate this requirement. In the LM5119 evaluation board (schematic shown in Figure 14) interleaved operation can be enabled by shorting both outputs together (with identical components in the power train), and using zero ohm resistors for R22 and R21. This shorts VCC2 to FB2 and COMP2 to COMP1 respectively. Also the channel2 feedback network C14, R6, and C15 should be removed. The easy re-configuration between two channel and single channel operation will allow insight into the benefits of interleaved operation.
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FIGURE 12. Cancellation Factor vs. Duty Cycle for Output Capacitor To begin an interleaved design, use the previous equations in this datasheet to first calculate the required value of components using one-half the current in the output power path. The Attenuation Factor in Figure 12 is the ratio of the output capacitor ripple to the inductor ripple vs. duty cycle. The inductor ripple used in this calculation is the ripple in either
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FIGURE 14. 10V 4A, 5V 8A Typical Application Schematic
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PCB Board Layout Recommendations
The LM5119 consists of two integrated regulators operating almost independently. Crosstalk between the two regulators under certain conditions may be observed as switch jitter. This effect is common for any dual channel regulator. Crosstalk effects are usually most severe when one channel is operating around 50% duty cycle. Careful layout practices help to minimize this effect. The following board layout guidelines apply specifically to the LM5119 and should be followed for best performance. 1. Keep the Loop1 and Loop2, shown in Figure 15, as small as possible 2. Keep the signal and power grounds separate 3. Place VCC capacitors (C6, C7) and VIN capacitor (C9) as closes as possible to the LM5119 4. Route CS and CSG traces together with Kelvin connection to the sense resistor 5. Connect AGND and PGND directly to the underside exposed pad 6. Ensure there are no high current paths beneath the underside exposed pad Switching Jitter Root Causes and Solutions 1. Noise coupling of the high frequency switching between two channels through the input power rail A. Keep the high current path as short as possible B. Choose a FET with minimum lead inductance C. Place local bypass capacitors (CIN1, CIN2) as close as possible to the high-side FETs to isolate one channel from the high frequency noise of the other channel D. Slow down the SW switching speed by increasing gate resistors R29 and R30 E. Minimize the effective ESR/ESL of the input capacitor by paralleling input capacitors 2. High frequency AC noise on FB, CS, CSG and COMP A. Use the star ground PCB layout technique and minimize the length of the high current path B. Keep the signal traces away from the SW, HO, HB traces and the inductor C. Add an R-C filter between the CS and CSG pins D. Place CS filter capacitor (C30, C31) next to the LM5119 and on the same PCB layer as the LM5119 3. Ground offset at the switching frequency A. Use the star ground PCB layout technique and minimize the length between the grounds of CIN1and CIN2
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FIGURE 15. Recommended PCB Layout
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Physical Dimensions inches (millimeters) unless otherwise noted
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LM5119 Wide Input Range Dual Synchronous Buck Controller
Notes
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