LM709 Operational Amplifier
February 1995
LM709 Operational Amplifier
General Description
The LM709 series is a monolithic operational amplifier intended for general-purpose applications Operation is completely specified over the range of voltages commonly used for these devices The design in addition to providing high gain minimizes both offset voltage and bias currents Further the class-B output stage gives a large output capability with minimum power drain External components are used to frequency compensate the amplifier Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations compensation can be tailored to optimize high-frequency performance for any gain setting The LM709C is the commercial-industrial version of the LM709 It is identical to the LM709 except that it is specified for operation from 0 C to a 70 C
Connection Diagrams
Metal Can Package Dual-In-Line Package
TL H 11477 – 6
Order Number LM709CN-8 See NS Package Number N08E
TL H 11477 – 4
Dual-In-Line Package
Order Number LM709AH LM709H or LM709CH See NS Package Number H08C
TL H 11477 – 5
Order Number LM709CN See NS Package Number N14A
C1995 National Semiconductor Corporation
TL H 11477
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings (Note 3)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage LM709 LM709A LM709C Power Dissipation (Note 1) LM709 LM709A LM709C Differential Input Voltage LM709 LM709A LM709C Input Voltage LM709 LM709A LM709C Output Short-Circuit Duration (TA e a 25 C) LM709 LM709A LM709C
g 18V
Storage Temperature Range LM709 LM709A LM709C Lead Temperature (Soldering 10 sec ) LM709 LM709A LM709C
b 65 C to a 150 C
300 C
300 mW 250 mW
g 5V g 10V
Operating Ratings (Note 3) Junction Temperature Range (Note 1) b 55 C to a 150 C LM709 LM709A LM709C 0 C to a 100 C Thermal Resistance (iJA) H Package 150 C W (iJC) 45 C W 8-Pin N Package 134 C W 14-Pin N Package 109 C W
5 seconds
Electrical Characteristics (Note 2)
Parameter Input Offset Voltage Input Bias Current Input Offset Current Input Resistance Output Resistance Supply Current Transient Response Risetime Overshoot Slew Rate Input Offset Voltage Conditions Min TA e 25 C RS s 10 kX TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C VS e g 15V VIN e 20 mV CL s 100 pF TA e 25 C TA e 25 C RS s 10 kX TA TA TA TA
e e e e
LM709A Typ 06 100 10 350 700 150 25 36 15 30 0 25 30 Max 20 200 50 150 Min
LM709 Typ 10 200 50 400 150 26 03 10 0 25 60 30 60 55 10 30 Max 50 500 200 50 Min
LM709C Typ 20 300 100 250 150 26 03 10 0 25 10 60 12 66 10 30 Max 75 1500 500
Units mV nA nA kX X mA ms % V ms mV
Average Temperature RS e 50X Coefficient of Input Offset Voltage RS e 10 kX Large Signal Voltage Gain Output Voltage Swing Input Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Input Offset Current Input Bias Current Input Resistance
25 25 25 25
C to TMAX C to TMIN C to TMAX C to TMIN 25
g 12 g 10 g8
18 18 20 48
10 10 15 25 70 25
g 12 g 10 g8
mV C
VS e g 15V RL t 2 kX VOUT e g 10V VS e g 15V RL e 10 kX VS e g 15V RL e 2 kX VS e g 15V RS s 10 kX RS s 10 kX TA e TMAX TA e TMIN TA e TMIN TA e TMIN
45
g 14 g 13 g 10
70
15
g 12 g 10 g8
45
g 14 g 13 g 10
V mV V V dB 200 400 750 20 mV V nA mA kX
g 14 g 13
80
110 40 35 40 03 100 50 250 06
70
90 25 20 100 05 150 200 500 15
65
90 25 75 125 0 36
85
170
40
100
50
250
Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction temperature for LM709 LM709A and 100 C maximum for L709C For operating at elevated temperatures the device must be derated based on thermal resistance iJA TJ(MAX) and TA Note 2 These specifications apply for b 55 C s TA s a 125 C for the LM709 LM709A and 0 C s TA s a 70 C for the LM709C with the following conditions g 9V s VS s g 15V C1 e 5000 pF R1 e 1 5 kX C2 e 200 pF and R2 e 51X Note 3 Absolute Maximum Ratings indicate limits which if exceeded may result in damage Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits For guaranteed specifications and test conditions see the Electrical Characteristics
2
Schematic Diagram
TL H 11477 – 1
Typical Applications
Unity Gain Inverting Amplifier FET Operational Amplifier
TL H 11477 – 3 TL H 11477 – 2
Voltage Follower
Offset Balancing Circuit
To be used with any capacitive loading on output Pin connections shown are for metal can package Should be equal to DC source resistance on input
TL H 11477 – 7 TL H 11477 – 8
3
Guaranteed Performance Characteristics
Input Common-Mode Voltage Range
Output Voltage Swing
Voltage Gain
Supply Current
TL H 11477 – 9
4
Typical Performance Characteristics
Input Offset Current
Input Bias Current
Supply Current
Slew Rate as a Function of Closed-Loop Gain Using Recommended Compensation Networks
Frequency Response for Various Closed-Loop Gains
Output Voltage Swing as a Function of Frequency
Output Voltage Swing
Input Bias Current as a Function of Supply Voltage
TL H 11477 – 10
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H) Order Number LM709AH LM709H or LM709CH NS Package Number H08C
8-Lead Molded Dual-In-Line Package (N) Order Number LM709CN-8 NS Package Number N08E 7
LM709 Operational Amplifier
Physical Dimensions inches (millimeters) (Continued)
14-Lead Molded Dual-In-Line Package (N) Order Number LM709CN NS Package Number N14A
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