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LM715MH

LM715MH

  • 厂商:

    NSC

  • 封装:

  • 描述:

    LM715MH - High Speed Operational Amplifier - National Semiconductor

  • 数据手册
  • 价格&库存
LM715MH 数据手册
LM715 High Speed Operational Amplifier October 1989 LM715 High Speed Operational Amplifier General Description The LM715 is a high speed high gain monolithic operational amplifier intended for use in a wide range of applications where fast signal acquisition or wide bandwidth is required The LM715 features fast settling time high slew rate low offsets and high output swing for large signal applications In addition the device displays excellent temperature stability and will operate over a wide range of supply voltages Features Y Y Y Y Y High slew rate 100 V ms (Inverting AV e 1) typically Fast settling time 800 ns typically Wide bandwidth 65 MHz typically Wide operating supply range Wide input voltage ranges Applications Y Y Y Video amplifiers Active filters High speed data conversion Connection Diagrams 10-Lead Metal Package 14-Lead DIP TL H 10059 – 1 TL H 10059 – 2 Top View Lead 5 connected to case Top View Ordering Information Device Code LM715MH LM715CH LM715MJ LM715CJ Package Code H10C H10C J14A J14A Package Description Metal Metal Ceramic DIP Ceramic DIP C1995 National Semiconductor Corporation TL H 10059 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperature Range Operating Temperature Range Extended (LM715M) Commercial (LM715C) Lead Temperature Metal Can and Ceramic DIP (Soldering 60 sec ) b 65 C to a 175 C b 55 C to a 125 C 0 C to a 70 C Internal Power Dissipation (Notes 1 2) 10L-Metal Can 14L-Ceramic DIP Supply Voltage Differential Input Voltage Input Voltage (Note 3) 1 07W 1 36W g 18V g 5V g 15V 300 C LM715M and LM715C Electrical Characteristics TA e 25 C Symbol VIO IIO IIB ZI RO ICC Pc VIR AVS V TR SR Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Impedance Output Resistance Supply Current Power Consumption Input Voltage Range Large Signal Voltage Gain Settling Time Transient Response Slew Rate Rise Time Overshoot AV e 100 AV e 10 VCC e g 15V unless otherwise specified LM715M Min Typ 20 70 400 10 75 55 165 g 10 g 12 Conditions RS s 10 kX LM715C Max 50 250 750 Min Typ 20 70 400 10 75 70 210 g 10 Units Max 75 250 1500 mV nA nA MX X 10 300 mA mW V V mV ns 75 50 ns % 55 165 g 12 RL t 2 0 kX VO e g 10V VO e g 5 0V AV e 1 0 VI e 400 mV AV e 1 0 15 30 800 30 25 70 38 60 40 10 30 800 30 25 70 38 V ms AV e 1 0 (Non-Inverting) AV e 1 0 (Inverting) LM715C Symbol VIO IIO IIB CMR PSRR AVS VOP Parameter Input Offset Voltage Input Offset Current Input Bias Current Common Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing Conditions Min RS s 10 kX TA e TA Max TA e TA Min TA e TA Max TA e TA Min RS s 10 kX RS s 10 kX RL t 2 0 kX VO e g 10V RL e 2 0 kX 10 g 10 g 13 15 18 100 10 18 100 The following specifications apply over the range of b55 C s TA s a 125 C for the LM715M and 0 C s TA s a 70 C for the LM715M Typ Max 75 250 800 0 75 40 74 92 45 300 8 g 10 g 13 LM715C Min Typ Max 10 250 750 15 75 74 (Note 4) 92 (Note 4) 45 (Note 4) 400 (Note 4) Units mV nA mA dB mV V V mV V Note 1 TJ Max e 175 C Note 2 Ratings apply to ambient temperature at 25 C Above this temperature derate the 10L-Metal Can at 7 1 mW C and the 14L-Ceramic DIP at 9 1 mW C Note 3 For supply voltages less than g 15V the absolute maximum input voltage is equal to the supply voltage Note 4 TA e 25 C only 2 Typical Performance Characteristics for LM715M and LM715C Voltage Gain vs Temperature (LM715) Supply Voltage Rejection Ratio vs Temperature (LM715) Slew Rate vs Temperature (LM715) Common Mode Rejection Ratio vs Temperature (LM715) Voltage Gain vs Temperature (LM715C) Supply Voltage Rejection Ratio vs Temperature (LM715C) Slew Rate vs Temperature (LM715C) Common Mode Rejection Ratio vs Temperature (LM715C) Frequency Response for Open Loop Gains (Note 1) Frequency Response for Closed Loop Gains Voltage Gain vs Frequency Open Loop Phase vs Frequency TL H 10059 – 4 Note 1 See ‘‘Non-Inverting Compensation Components Value Table’’ for Closed Loop Gain values 3 Typical Performance Characteristics for LM715M and LM715C (Continued) Output Swing vs Frequency for Closed Loop Gains Supply Voltage Rejection Ratio vs Frequency Common Mode Rejection Ratio vs Frequency Unity Gain Large Signal Pulse Response Large Signal Pulse Response for Gain 10 Large Signal Pulse Response for Gain 100 Slew Rate vs Closed Loop Voltage Gain Slew Rate vs Supply Voltage Voltage Follower Transient Response Inverting Unity Gain Large Signal Pulse Response Small Signal Pulse Response Inverting Unity Gain TL H 10059 – 5 4 Typical Performance Characteristics for LM715M and LM715C (Continued) Voltage Follower (Note 2) Voltage Offset Null Circuit (Note 2) High Slew Rate Circuit (Note 2) TL H 10059 – 7 TL H 10059 – 8 TL H 10059–6 Note 2 Lead numbers apply to metal package Equivalent Circuit TL H 10059 – 3 5 Applications Information Non-Inverting Compensation Components Values Closed Loop Gain 1000 100 10 (Note) 1 C1 10 pF 50 pF 100 pF 500 pF 500 pF 2000 pF 250 pF 1000 pF 1000 pF C2 C3 Ringing Excessive ringing (long acquisition time) may occur with large capacitive loads This may be reduced by isolating the capacitive load with a resistance of 100X Large source resistances may also give rise to the same problem and this may be decreased by the addition of a capacitance across the feedback resistance A value of around 50 pF for unity gain configuration and around 3 0 pF for gain 10 should be adequate Latch Up This may occur when the amplifier is used as a voltage follower The inclusion of a diode between leads 6 and 2 with the cathode toward lead 2 is the recommended preventive measure Note For gain 10 compensation may be simplified by removing C2 C3 and adding a 200 pF capacitor (C4) between Lead 7 and 10 Typical Applications Frequency Compensation Circuit TL H 10059–9 Suggested Values of Compensation Capacitors vs Closed Loop Voltage Gain High Speed Integrator TL H 10059 – 14 TL H 10059–10 Layout Instructions Layout The layout should be such that stray capacitance is minimal Supplies The supplies should be adequately bypassed Used of 0 1 mF high quality ceramic capacitors is recommended TL H 10059 – 13 Note All lead numbers on this page apply to metal package 6 Typical Applications (Continued) Wide Band Video Amplifier Drive Capability with 75X Coax Cable TL H 10059 – 11 TL H 10059 – 12 Note All lead numbers shown refer to metal package Physical Dimensions inches (millimeters) 10-Lead Metal Can Package (H) Order Number LM715CH or LM715MH NS Package Number H10C 7 LM715 High Speed Operational Amplifier Physical Dimensions inches (millimeters) (Continued) 14-Lead Ceramic Dual-In-Line Package (J) Order Number LM715CJ or LM715MJ NS Package Number J14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications
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