LM747 Dual Operational Amplifier
November 1994
LM747 Dual Operational Amplifier
General Description
The LM747 is a general purpose dual operational amplifier The two amplifiers share a common bias network and power supply leads Otherwise their operation is completely independent Additional features of the LM747 are no latch-up when input common mode range is exceeded freedom from oscillations and package flexibility The LM747C LM747E is identical to the LM747 LM747A except that the LM747C LM747E has its specifications guaranteed over the temperature range from 0 C to a 70 C instead of b55 C to a 125 C
Features
Y Y Y Y Y Y
No frequency compensation required Short-circuit protection Wide common-mode and differential voltage ranges Low power consumption No latch-up Balanced offset null
Connection Diagrams
Metal Can Package Dual-In-Line Package
TL H 11479 – 5 TL H 11479 – 4
Order Number LM747H See NS Package Number H10C
V a A and V a B are internally connected
Order Number LM747CN or LM747EN See NS Package Number N14A
C1995 National Semiconductor Corporation
TL H 11479
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage LM747 LM747A LM747C LM747E Power Dissipation (Note 1) Differential Input Voltage
g 22V g 18V
Input Voltage (Note 2) Output Short-Circuit Duration Operating Temperature Range LM747 LM747A LM747C LM747E Storage Temperature Range Lead Temperature (Soldering 10 sec )
g 15V
Indefinite
b 55 C to a 125 C 0 C to a 70 C b 65 C to a 150 C
800 mW g 30V
300 C
Electrical Characteristics (Note 3)
Parameter Input Offset Voltage Conditions TA e 25 C RS s 10 kX RS s 50X RS s 50X RS s 10 kX Average Input Offset Voltage Drift Input Offset Voltage Adjustment Range Input Offset Current TA e 25 C VS e g 20V TA e 25 C
g 10
LM747A LM747E Min Typ Max Min
LM747 Typ 10 Max 50 Min
LM747C Typ 20 Max 60
Units
08
30 40 60 15 75
mV mV mV C
g 15
g 15
mV 200 300 nA C nA
30
30 70
20 85
200 500
20
Average Input Offset Current Drift Input Bias Current Input Resistance TA e 25 C TAMIN s TA s TAMAX TA e 25 C VS e g 20V VS e g 20V Input Voltage Range TA e 25 C
g 12 g 13
05 30 10 05
g 12 g 12 g 13 g 13
80 0 210 03
80 20
500 15 03
80 20
500 08
nA mA MX
60
V
Large Signal Voltage Gain
TA e 25 C RL t 2 kX VS e g 20V VO e g 15V VS e g 15V VO e g 10V RL t 2 kX VS e g 20V VO e g 15V VS e g 15V VO e g 10V VS e g 5V VO e g 2V
50 50 32 25 10
g 16 g 15
V mV 200 20 200 V mV V mV 15 V mV V mV
Output Voltage Swing
VS e g 20V RL t 10 kX RL t 2 kX VS e g 15V RL t 10 kX RL t 2 k X
V
g 12 g 10
g 14 g 13
g 12 g 10
g 14 g 13
V mA dB
Output Short Circuit Current Common-Mode Rejection Ratio
TA e 25 C RS s 10 kX VCM e g 12V RS s 50 kX VCM e g 12V
10 10
25
35 40 70
25 90 70
25 90
80
95
2
Electrical Characteristics (Note 3) (Continued)
Parameter Supply Voltage Rejection Ratio Transient Response Rise Time Overshoot Bandwidth (Note 4) Slew Rate Supply Current Amp Power Consumption Amp Conditions VS e g 20V to VS e g 5V RS s 50X RS s 10 kX TA e 25 C Unity Gain 0 25 60 TA e 25 C TA e 25 C Unity Gain TA e 25 C TA e 25 C VS e g 20V VS e g 15V VS e g 20V TA e TAMIN TA e TAMAX VS e g 20V TA e TAMIN TA e TAMAX VS e g 15V TA e TAMIN TA e TAMAX 80 0 437 03 15 07 25 150 50 165 135 150 150 150 60 45 100 75 85 50 85 05 17 28 05 17 28 08 20 03 5 03 5 ms % MHz V ms mA LM747A LM747E Min 86 Typ 96 77 96 77 96 Max Min LM747 Typ Max Min LM747C Typ Max Units
dB
mW
LM747A
mW
LM747E
mW
LM747
mW
Note 1 The maximum junction temperature of the LM747C LM747E is 100 C For operating at elevated temperatures devies in the TO-5 package must be derated based on a thermal resistance of 150 C W junction to ambient or 45 C W junction to case The thermal resistance of the dual-in-line package is 100 C W junction to ambient Note 2 For supply voltages less than g 15V the absolute maximum input voltage is equal to the supply voltage Note 3 These specifications apply for g 5V s VS s g 20V and b 55 C s TA s 125 C for the LM747A and 0 C s TA s 70 C for the LM747E unless otherwise specified The LM747 and LM747C are specified for VS e g 15V and b 55 C s TA s 125 C and 0 C s TA s 70 C respectively unless otherwise specified Note 4 Calculated value from 0 35 Rise Time (ms)
Schematic Diagram (Each Amplifier)
TL H 11479 – 1
Note Numbers in parentheses are pin numbers for amplifier B DIP only
3
Typical Performance Characteristics
Input Bias and Offset Currents vs Ambient Temperature DC Parameters vs Supply Voltage Common Mode Rejection Ratio vs Frequency
Output Voltage Swing vs Frequency
Output Voltage Swing vs Load Resistance
Output Swing and Input Range vs Supply Voltage
Normalized DC Parameters vs Ambient Temperature
Transient Response
Frequency Characteristics vs Ambient Temperature
Frequency Characteristics vs Supply Voltage
Output Resistance vs Frequency
Open Loop Transfer Characteristics vs Frequency
TL H 11479 – 2
4
Typical Performance Characteristics
Input Resistance and Input Capacitance vs Frequency
(Continued)
Broadband Noise for Various Bandwidths
Input Noise Voltage and Current vs Frequency
Voltage Follower Large Signal Pulse Response
TL H 11479 – 3
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H) Order Number LM747H NS Package Number H10C
7
LM747 Dual Operational Amplifier
Physical Dimensions inches (millimeters) (Continued)
Dual-In-Line Package (N) Order Number LM747CN or LM747EN NS Package Number N14A
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