LME49710

LME49710 High Performance, High Fidelity Audio Operational Amplifier March 2007 LME49710 High Performance, High Fidelity Audio Operational Amplifier General Description The LME49710 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49710 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49710 combines extremely low voltage noise density (2.5nV/Hz) with vanishingly low THD+N (0.00003%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49710 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. The LME49710's outstanding CMRR(120dB), PSRR(120dB), and VOS (0.05mV) give the amplifier excellent operational amplifier DC performance. The LME49710 has a wide supply range of ±2.5V to ±17V. Over this supply range the LME49710’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49710 is unity gain stable. The Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LME49710 is available in 8–lead narrow body SOIC, 8– lead plastic DIP, and 8–lead metal can TO-99. Demonstration boards are available for each package. Key Specifications ■ Power Supply Voltage Range ■ THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) RL = 2kΩ RL = 600Ω 0.00003% (typ) 0.00003% (typ) 2.5nV/√Hz (typ) ±20V/μs (typ) 55MHz (typ) 140dB (typ) 7nA (typ) 0.05mV (typ) 0.000009% ±2.5V to ±17V ■ Input Noise Density ■ Slew Rate ■ Gain Bandwidth Product ■ Open Loop Gain (RL = 600Ω) ■ Input Bias Current ■ Input Offset Voltage ■ DC Gain Linearity Error Features ■ ■ ■ ■ ■ Easily drives 600Ω loads Optimized for superior audio signal fidelity Output short circuit protection PSRR and CMRR exceed 120dB (typ) SOIC, DIP, TO-99 metal can packages Applications ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultra high quality audio amplification High fidelity preamplifiers High fidelity multimedia State of the art phono pre amps High performance professional audio High fidelity equalization and crossover networks High performance line drivers High performance line receivers High fidelity active filters © 2007 National Semiconductor Corporation 202104 www.national.com LME49710 Typical Application 20210406 FIGURE 1. Passively Equalized RIAA Phono Preamplifier www.national.com 2 LME49710 Connection Diagrams 20210402 Order Number LME49710MA See NS Package Number — M08A Order Number LME49710NA See NS Package Number — N08E Metal Can 20210405 Order Number LME49710HA See NS Package Number — H08C 3 www.national.com LME49710 Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage (VS = V+ - V-) Storage Temperature Input Voltage Output Short Circuit (Note 3) Power Dissipation ESD Susceptibility (Note 4) 36V −65°C to 150°C (V-) - 0.7V to (V+) + 0.7V Continuous Internally Limited 2000V (Notes 1, 2) ESD Susceptibility (Note 5) Junction Temperature Thermal Resistance  θJA (SO)  θJA (NA)  θJA (HA)  θJC (HA) Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage Range 200V 150°C 145°C/W 102°C/W 150°C/W 35°C/W –40°C ≤ TA ≤ 85°C ±2.5V ≤ VS ≤ ± 17V Electrical Characteristics The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified. LME49710 Symbol Parameter Conditions AV = 1, VOUT = 3VRMS THD+N Total Harmonic Distortion + Noise RL = 2kΩ RL = 600Ω IMD GBWP SR FPBW Intermodulation Distortion Gain Bandwidth Product Slew Rate Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz AV = 1, 10V step, CL = 100pF 0.1% error range fBW = 20Hz to 20kHz f = 1kHz f = 10Hz f = 1kHz f = 10Hz AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00003 0.00003 0.00005 55 ±20 10 45 ±15 0.00009 % (max) % (max) % (max) MHz (min) V/μs (min) MHz Typical (Note 6) Limit (Notes 7, 8) Units (Limits) ts Settling time Equivalent Input Noise Voltage 1.2 0.34 2.5 6.4 1.6 3.1 ±0.05 0.2 125 7 0.1 5 +14.1 –13.9 65 (V+) – 2.0 (V-) + 2.0 110 110 72 ±0.7 0.65 4.7 μs μVRMS en in VOS Equivalent Input Noise Density Current Noise Density Offset Voltage  nV/√Hz  nV/√Hz  pA/√Hz  pA/√Hz mV (max) μV/°C dB (min) nA (max) nA/°C nA (max) V (min) V (min) dB (min) kΩ MΩ dB Average Input Offset Voltage Drift vs ΔVOS/ΔTemp 40°C ≤ TA ≤ 85°C Temperature PSRR IB ΔIOS/ΔTemp IOS VIN-CM CMRR ZIN Average Input Offset Voltage Shift vs ΔVS = 20V (Note 9) Power Supply Voltage Input Bias Current Input Bias Current Drift vs Temperature Input Offset Current Common-Mode Input Voltage Range Common-Mode Rejection Differential Input Impedance Common Mode Input Impedance –10V