LME49721 High Performance, High Fidelity Rail-to-Rail Input/Output Audio Operational Amplifier
October 2007
LME49721 High Performance, High Fidelity Rail-to-Rail Input/Output Audio Operational Amplifier
General Description
The LME49721 is a low distortion, low noise Rail-to-Rail Input/ Output operational amplifier optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49721 Rail-to-Rail Input/Output operational amplifier delivers superior signal amplification for outstanding performance. The LME49721 combines a very high slew rate with low THD+N to easily satisfy demanding applications. To ensure that the most challenging loads are driven without compromise, the LME49721 has a high slew rate of ±8.5V/μs and an output current capability of ±9.7mA. Further, dynamic range is maximized by an output stage that drives 10kΩ loads to within 10mV of either power supply voltage. The LME49721 has a wide supply range of 2.2V to 5.5V. Over this supply range the LME49721’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49721 is unity gain stable.
■ Gain Bandwidth Product ■ Open Loop Gain (RL = 600Ω) ■ Input Bias Current ■ Input Offset Voltage ■ PSRR
20MHz (typ) 118dB (typ) 40fA (typ) 0.3mV (typ) 103dB (typ)
Features
■ Rail-to-rail Input and Output ■ Easily drives 10kΩ loads to within 10mV of each power
supply voltage ■ Optimized for superior audio signal fidelity ■ Output short circuit protection
Applications
■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■
Ultra high quality portable audio amplification High fidelity preamplifiers High fidelity multimedia State of the art phono pre amps High performance professional audio High fidelity equalization and crossover networks High performance line drivers High performance line receivers High fidelity active filters DAC I–V converter ADC front-end signal conditioning
Key Specifications
■ Power Supply Voltage Range ■ Quiescent Current ■
THD+N (AV = 2, VOUT = 4Vp-p, fIN = 1kHz) RL = 2kΩ RL = 600Ω 0.00008% (typ) 0.0001% (typ) 4nV/√Hz (typ), @ 1kHz ±8.5V/μs (typ) 2.2V to 5.5V 2.15mA (typ)
■ Input Noise Density ■ Slew Rate
Typical Connection, Pinout, and Package Marking
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FIGURE 1. Buffer Amplifier
Order Number LME49721MA Se NS Package Number M08A
© 2007 National Semiconductor Corporation
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LME49721
Package Marking
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NS = National Logo Z = Assembly plant code X = 1 Digit date code TT = Lot traceability L49721 = LME49721 MA = Narrow SOIC package code
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LME49721
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage (VS = V+ - V-) Storage Temperature Input Voltage Output Short Circuit (Note 3) 6V −65°C to 150°C (V-) - 0.7V to (V+) + 0.7V Continuous
Power Dissipation ESD Rating (Note 4) ESD Rating (Note 5) Junction Temperature Thermal Resistance θJA (SO) Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage Range
Internally Limited 2000V 200V 150°C 165°C/W –40°C ≤ TA ≤ 85°C
2.2V ≤ VS ≤ 5.5V
Electrical Characteristics for the LME49721
Symbol Parameter
The following specifications apply for the circuit shown in Figure 1. VS = 5V, RL = 10kΩ, RSOURCE = 10Ω, fIN = 1kHz, and TA = 25°C, unless otherwise specified. LME49721 Conditions AV = +1, VOUT = 2Vp-p, THD+N Total Harmonic Distortion + Noise RL = 2kΩ RL = 600Ω IMD GBWP SR FPBW Intermodulation Distortion Gain Bandwidth Product Slew Rate Full Power Bandwidth A V = +1 VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz AV = 1, 4V step 0.1% error range fBW = 20Hz to 20kHz, A-weighted f = 1kHz A-weighted f = 10kHz AV = +1, VOUT = 2Vp-p, Two-tone, 60Hz & 7kHz 4:1 0.0002 0.0002 0.0004 20 8.5 2.2 15 0.001 % (max) % MHz (min) V/μs (min) MHz Typical (Note 6) Limit (Note 7) Units (Limits)
ts
Settling time Equivalent Input Noise Voltage
800 .707 4 4.0 0.3 1.1 103 85 1.5 1.13 6
ns μVP-P (max)
en
Equivalent Input Noise Density Current Noise Density Offset Voltage
nV/√Hz
(max)
in VOS
fA/√Hz
mV (max) μV/°C dB (min) dB fA fA/°C fA (V+) – 0.1 (V-) + 0.1 V (min) dB (min) Hz 100 dB (min) dB (min) 115 dB (min)
Average Input Offset Voltage Drift vs ΔVOS/ΔTemp 40°C ≤ TA ≤ 85°C Temperature PSRR ISOCH-CH IB ΔIOS/ΔTemp IOS VIN-CM CMRR Average Input Offset Voltage Shift vs Power Supply Voltage Channel-to-Channel Isolation Input Bias Current Input Bias Current Drift vs Temperature Input Offset Current Common-Mode Input Voltage Range Common-Mode Rejection 1/f Corner Frequency VSS - 200mV < VOUT < VDD + 200mV AVOL Open Loop Voltage Gain RL = 600Ω RL = 2kΩ RL = 10kΩ VSS - 100mV < VCM < VDD + 100mV fIN = 1kHz VCM = VS/2 –40°C ≤ TA ≤ 85°C VCM = VS/2
117 40 48 60
93 2000 118 122 130
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LME49721
LME49721 Symbol Parameter Conditions Typical (Note 6) RL = 600Ω VOUTMIN Output Voltage Swing RL = 10kΩ, VS = 5.0V IOUT IOUT-SC ROUT IS Output Current Short Circuit Current Output Impedance Quiescent Current per Amplifier fIN = 10kHz Closed-Loop Open-Loop IOUT = 0mA RL = 250Ω, VS = 5.0V VDD – 30mV VSS + 30mV VDD – 10mV VSS + 10mV 9.7 100 0.01 46 2.15 3.25 Limit (Note 7) VDD – 80mV VSS + 80mV VDD – 20mV VSS + 20mV 9.3
Units (Limits) V (min) V (min) V (min) V (min) mA (min) mA Ω mA (max)
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower. Note 4: Human body model, applicable std. JESD22-A114C. Note 5: Machine model, applicable std. JESD22-A115-A. Note 6: Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.
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Typical Performance Characteristics
THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 2kΩ, AV = 2, BW = 22kHz
Graphs were taken in dual supply configuration. THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 2kΩ, AV = 2
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THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 10kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 10kΩ, AV = 2
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THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 600Ω, AV = 2, BW = 22kHz
THD+N vs Frequency VS = ±2.5V, VOUT = 4VP-P RL = 600Ω, AV = 2
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THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 2kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 2kΩ, AV = 2
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THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 10kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 10kΩ, AV = 2
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THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 600Ω, AV = 2, BW = 22kHz
THD+N vs Frequency VS = ±2.75V, VOUT = 4VP-P RL = 600Ω, AV = 2
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THD+N vs Output Voltage VS = ±1.1V RL = 2kΩ, AV = 2
THD+N vs Output Voltage VS = ±1.1V RL = 10kΩ, AV = 2
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THD+N vs Output Voltage VS = ±1.1V RL = 600Ω, AV = 2
THD+N vs Output Voltage VS = ±1.5V RL = 2kΩ, AV = 2
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THD+N vs Output Voltage VS = ±1.5V RL = 10kΩ, AV = 2
THD+N vs Output Voltage VS = ±1.5V RL = 600Ω, AV = 2
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THD+N vs Output Voltage VS = ±2.5V RL = 2kΩ, AV = 2
THD+N vs Output Voltage VS = ±2.5V RL = 10kΩ, AV = 2
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THD+N vs Output Voltage VS = ±2.5V RL = 600Ω, AV = 2
THD+N vs Output Voltage VS = ±2.75V RL = 2kΩ, AV = 2
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THD+N vs Output Voltage VS = ±2.75V RL = 10kΩ, AV = 2
THD+N vs Output Voltage VS = ±2.75V RL = 600Ω, AV = 2
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Crosstalk vs Frequency VS = ±1.1V VOUT = 2Vp-p RL = 2kΩ
Crosstalk vs Frequency VS = ±1.1V VOUT = 2Vp-p RL = 10kΩ
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Crosstalk vs Frequency VS = ±1.1V VOUT = 2Vp-p RL = 600Ω
Crosstalk vs Frequency VS = ±1.5V, VOUT = 2Vp-p RL = 2kΩ
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Crosstalk vs Frequency VS = ±1.5V VOUT = 2Vp-p RL = 10kΩ
Crosstalk vs Frequency VS = ±1.5V VOUT = 2Vp-p RL = 600Ω
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Crosstalk vs Frequency VS = ±2.5V VOUT = 4Vp-p RL = 2kΩ
Crosstalk vs Frequency VS = ±2.5V VOUT = 4Vp-p RL = 10kΩ
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Crosstalk vs Frequency VS = ±2.5V VOUT = 4Vp-p RL = 600Ω
Crosstalk vs Frequency VS = ±2.75V VOUT = 4Vp-p RL = 2kΩ
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Crosstalk vs Frequency VS = ±2.75V VOUT = 4Vp-p RL = 10kΩ
Crosstalk vs Frequency VS = ±2.75V VOUT = 4Vp-p RL = 600Ω
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PSRR vs Frequency VS = ±1.1V VRIPPLE = 200mVP-P RL = 2kΩ
PSRR vs Frequency VS = ±1.1V VRIPPLE = 200mVP-P RL = 10kΩ
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PSRR vs Frequency VS = ±1.1V VRIPPLE = 200mVP-P RL = 600Ω
PSRR vs Frequency VS = ±1.5V VRIPPLE = 200mVP-P RL = 2kΩ
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PSRR vs Frequency VS = ±1.5V VRIPPLE = 200mVP-P RL = 10kΩ
PSRR vs Frequency VS = ±1.5V VRIPPLE = 200mVP-P RL = 600Ω
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PSRR vs Frequency VS = ±2.5V VRIPPLE = 200mVP-P RL = 2kΩ
PSRR vs Frequency VS = ±2.5V VRIPPLE = 200mVP-P RL = 10kΩ
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PSRR vs Frequency VS = ±2.5V VRIPPLE = 200mVP-P RL = 600Ω
PSRR vs Frequency VS = ±2.75V VRIPPLE = 200mVP-P RL = 2kΩ
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PSRR vs Frequency VS = ±2.75V VRIPPLE = 200mVP-P RL = 10kΩ
PSRR vs Frequency VS = ±2.75V VRIPPLE = 200mVP-P RL = 600Ω
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CMRR vs Frequency VS = ±1.5V RL = 2kΩ
CMRR vs Frequency VS = ±1.5V RL = 10kΩ
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CMRR vs Frequency VS = ±1.5V RL = 600Ω
CMRR vs Frequency VS = ±2.5V RL = 2kΩ
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CMRR vs Frequency VS = ±2.5V RL = 10kΩ
CMRR vs Frequency VS = ±2.5V RL = 600Ω
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CMRR vs Frequency VS = ±2.75V RL = 2kΩ
CMRR vs Frequency VS = ±2.75V RL = 10kΩ
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CMRR vs Frequency VS = ±2.75V RL = 600Ω
Output Voltage Swing Neg vs Power Supply RL = 2kΩ
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Output Voltage Swing Neg vs Power Supply RL = 10kΩ
Output Voltage Swing Neg vs Power Supply RL = 600Ω
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Output Voltage Swing Pos vs Power Supply RL = 2kΩ
Output Voltage Swing Pos vs Power Supply RL = 10kΩ
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Output Voltage Swing Pos vs Power Supply RL = 600Ω
Supply Current per amplifier vs Power Supply RL = 2kΩ, Dual Supply
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Supply Current per amplifier vs Power Supply RL = 10kΩ, Dual Supply
Supply Current per amplifier vs Power Supply RL = 600Ω, Dual Supply
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LME49721
Application Information
DISTORTION MEASUREMENTS The vanishingly low residual distortion produced by LME49721 is below the capabilities of all commercially available equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion meter to the amplifier's inputs and outputs. The solution. however, is quite simple: an additional resistor. Adding this resistor extends the resolution of the distortion measurement equipment. The LME49721's low residual is an input referred internal error. As shown in Figure 1, adding the 10Ω resistor connected between athe amplifier's inverting and non-inverting inputs
changes the amplifier's noise gain. The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier's closed-loop gain is unaltered, the feedback available to correct distortion errors is reduced by 101. To ensure minimum effects on distortion measurements, keep the value of R1 low as shown in Figure 1. This technique is verified by duplicating the measurements with high closed loop gain and/or making the measurements at high frequencies. Doing so, produces distortion components that are within equipments capabilities. This datasheet's THD+N and IMD values were generated using the above described circuit connected to an Audio Precision System Two Cascade.
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FIGURE 1. THD+N and IMD Distortion Test Circuit with AV = 2 OPERATING RATINGS AND BASIC DESIGN GUIDELINES The LME49721 has a supply voltage range from +2.2V to +5.5V single supply or ±1.1 to ±2.75V dual supply. Bypassed capacitors for the supplies should be placed as close to the amplifier as possible. This will help minimize any inductance between the power supply and the supply pins. In addition to a 10μF capacitor, a 0.1μF capacitor is also recommended in CMOS amplifiers. The amplifier's inputs lead lengths should also be as short as possible. If the op amp does not have a bypass capacitor, it may oscillate. BASIC AMPLIFIER CONFIGURATIONS The LME49721 may be operated with either a single supply or dual supplies. Figure 2 shows the typical connection for a single supply inverting amplifier. The output voltage for a single supply amplifier will be centered around the commonmode voltage Vcm. Note, the voltage applied to the Vcm insures the output stays above ground. Typically, the Vcm
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should be equal to VDD/2. This is done by putting a resistor divider ckt at this node, see Figure 2.
FIGURE 2. Single Supply Inverting Op Amp
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Figure 3 shows the typical connection for a dual supply inverting amplifier. The output voltage is centered on zero.
er consumption in the source, or to drive heavy loads. The input impedance of the op amp is very high. Therefore, the input of the op amp does not load down the source. The output impedance on the other hand is very low. It allows the load to either supply or absorb energy to a circuit while a secondary voltage source dissipates energy from a circuit. The Buffer is a unity stable amplifier, 1V/V. Although the feedback loop is tied from the output of the amplifier to the inverting input, the gain is still positive. Note, if a positive feedback is used, the amplifier will most likely drive to either rail at the output.
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FIGURE 3. Dual Supply Inverting Op Amp Figure 4 shows the typical connection for the Buffer Amplifier or also called a Voltage Follower. A Buffer Amplifier can be used to solve impedance matching problems, to reduce pow202049n1
FIGURE 4. Buffer
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LME49721
Typical Applications
ANAB Preamp NAB Preamp Voltage Gain vs Frequency
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AV = 34.5 F = 1 kHz En = 0.38 μV A Weighted
Balanced to Single Ended Converter
Adder/Subtracter
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VO = V1 + V2 − V3 − V4
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VO = V1–V2
Sine Wave Oscillator
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LME49721
Second Order High Pass Filter (Butterworth)
Second Order Low Pass Filter (Butterworth)
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Illustration is f0 = 1 kHz Illustration is f0 = 1 kHz
State Variable Filter
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Illustration is f0 = 1 kHz, Q = 10, ABP = 1
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LME49721
AC/DC Converter
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2 Channel Panning Circuit (Pan Pot)
Line Driver
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Tone Control
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Illustration is: fL = 32 Hz, fLB = 320 Hz fH =11 kHz, fHB = 1.1 kHz
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RIAA Preamp
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Av = 35 dB En = 0.33 μV S/N = 90 dB f = 1 kHz A Weighted A Weighted, VIN = 10 mV @f = 1 kHz
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Balanced Input Mic Amp
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Illustration is: V0 = 101(V2 − V1)
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10 Band Graphic Equalizer
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fo (Hz) 32 64 125 250 500 1k 2k 4k 8k 16k
Note 8: At volume of change = ±12 dB
C1 0.12μF 0.056μF 0.033μF 0.015μF 8200pF 3900pF 2000pF 1100pF 510pF 330pF
C2 4.7μF 3.3μF 1.5μF 0.82μF 0.39μF 0.22μF 0.1μF 0.056μF 0.022μF 0.012μF
R1 75kΩ 68kΩ 62kΩ 68kΩ 62kΩ 68kΩ 68kΩ 62kΩ 68kΩ 51kΩ
R2 500Ω 510Ω 510Ω 470Ω 470Ω 470Ω 470Ω 470Ω 510Ω 510Ω
Q = 1.7 Reference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61
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Revision History
Rev 1.0 1.1 Date 09/26/07 10/01/07 Description Initial release. Input more info under the Buffer Amplifier.
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Physical Dimensions inches (millimeters) unless otherwise noted
NS Package M08A
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LME49721 High Performance, High Fidelity Rail-to-Rail Input/Output Audio Operational Amplifier
Notes
THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS, IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS. EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness. National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders.
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