LME49725

LME49725 PowerWise® Dual High Performance, High Fidelity Audio Operational Amplifier April 3, 2008 LME49725 PowerWise® Dual High Performance, High Fidelity Audio Operational Amplifier General Description The LME49725 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49725 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49725 combines extremely low voltage noise density (3.3nV/√Hz) with vanishingly low THD+N (0.00004%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49725 has a high slew rate of ±15V/μs and an output current capability of ±22mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. Part of the PowerWise® family of energy efficient solutions, the LME49725 consumes only 3.0mA of supply current per amplifier while providing superior performance to high performance, high fidelity applications. The LME49725's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.5mV) give the amplifier excellent operational amplifier DC performance. The LME49725 has a wide supply range of ±4.5V to ±18V. Over this supply range the LME49725’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49725 is unity gain stable. This audio operational amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LME49725 is available in 8–lead narrow body SOIC. Key Specifications ■ Power Supply Voltage Range ■ THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) RL = 2kΩ RL = 600Ω 0.00004% (typ) 0.00004% (typ) 3.0mA (typ) 3.3nV/√Hz (typ) ±15V/μs (typ) 40MHz (typ) 135dB (typ) 15nA (typ) 0.5mV (typ) 0.000009% (typ) ±4.5V to ±18V ■ Quiescent current per Amplifier ■ Input Noise Density ■ Slew Rate ■ Gain Bandwidth Product ■ Open Loop Gain (RL = 600Ω) ■ Input Bias Current ■ Input Offset Voltage ■ DC Gain Linearity Error Features ■ Optimized for superior audio signal fidelity ■ Output short circuit protection ■ PSRR and CMRR exceed 120dB (typ) Applications ■ ■ ■ ■ ■ ■ ■ ■ ■ Audio amplification Preamplifiers Multimedia Phono preamplifiers Professional audio Equalization and crossover networks Line drivers Line receivers Active filters © 2008 National Semiconductor Corporation 300342 www.national.com LME49725 Connection Diagrams 30034255 Order Number LME49725MA See NS Package Number — M08A LME49725 Top Mark 300342p0 N — National logo Z — Assembly plant code X — 1 Digit date code TT — Die traceability L49725 — LME49725 MA — Package code www.national.com 2 LME49725 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage (VS = V+ - V-) Storage Temperature Input Voltage Differential Input Voltage Output Short Circuit (Note 3) Power Dissipation 38V −65°C to 150°C (V-)-0.7V to (V+)+0.7V ±0.7V Continuous Internally Limited ESD Rating (Note 4) ESD Rating (Note 5) Pins 1, 4, 7 and 8 Pins 2, 3, 5 and 6 Junction Temperature Thermal Resistance  θJA (SO) Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage Range 2000V 200V 100V 150°C 145°C/W –40°C ≤ TA ≤ 85°C ±4.5V ≤ VS ≤ ±18V = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol Parameter Electrical Characteristics for the LME49725 Conditions AV = 1, VOUT = 3Vrms (Note 2) The specifications apply for VS = ±15V, RL LME49725 Typical (Note 6) Limit (Note 7) Units (Limits) THD+N Total Harmonic Distortion + Noise RL = 2kΩ RL = 600Ω AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00004 0.00004 0.00005 40 ±15 0.0002 % % % IMD GBWP SR FPBW Intermodulation Distortion Gain Bandwidth Product Slew Rate Full Power Bandwidth 30 ±10 MHz (min) V/μs (min) MHz VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz AV = –1, 10V step, CL = 100pF 0.1% error range fBW = 20Hz to 20kHz f = 1kHz f = 10Hz f = 1kHz f = 10Hz 7 ts Settling time Equivalent Input Noise Voltage 1.6 0.4 3.3 20 1.4 3.5 ±0.5 0.2 120 118 112 ±15 0.1 11 ±13.9 65 (V+)-2.0 (V-)+2.0 100 ±90 100 ±1.0 0.8 5.2 μs μVRMS (max) en Equivalent Input Noise Density in VOS Current Noise Density Offset Voltage  nV/√Hz (max)  pA/√Hz  pA/√Hz mV (max) μV/°C dB (min) dB dB nA (max) nA/°C nA (max) V (min) V (min) dB (min) kΩ MΩ Average Input Offset Voltage Drift vs ΔVOS/ΔTemp –40°C ≤ TA ≤ 85°C Temperature PSRR ISOCH-CH IB ΔIOS/ΔTemp IOS VIN-CM CMRR ZIN Average Input Offset Voltage Shift vs ΔVS = 20V (Note 8) Power Supply Voltage Channel-to-Channel Isolation Input Bias Current Input Bias Current Drift vs Temperature Input Offset Current Common-Mode Input Voltage Range Common-Mode Rejection Differential Input Impedance Common Mode Input Impedance –10V