LMH6628MAEP

LMH6628MAEP

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    LMH6628MAEP - Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp - National Semicond...

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LMH6628MAEP 数据手册
LMH6628EP Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp OBSOLETE LMH6628EP October 15, 2010 Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp General Description The National LMH6628EP is a high speed dual op amp that offers a traditional voltage feedback topology featuring unity gain stability and slew enhanced circuitry. The LMH6628EP's low noise and very low harmonic distortion combine to form a wide dynamic range op amp that operates from a single (5V to 12V) or dual (±5V) power supply. Each of the LMH6628EP's closely matched channels provides a 300MHz unity gain bandwidth and low input voltage ). Low 2nd/3rd harmonic distortion noise density (2nV/ (−65/−74dBc at 10MHz) make the LMH6628EP a perfect wide dynamic range amplifier for matched I/Q channels. With its fast and accurate settling (12ns to 0.1%), the LMH6628EP is also an excellent choice for wide dynamic range, anti-aliasing filters to buffer the inputs of hi resolution analog-to-digital converters. Combining the LMH6628EP's two tightly matched amplifiers in a single 8-pin SOIC package reduces cost and board space for many composite amplifier applications such as active filters, differential line drivers/receivers, fast peak detectors and instrumentation amplifiers. The LMH6628EP is fabricated using National’s VIP10™ complimentary bipolar process. To reduce design times and assist in board layout, the LMH6628EP is supported by an evaluation board (CLC730036). ENHANCED PLASTIC • • • • • • Extended Temperature Performance of −40°C to +85°C Baseline Control - Single Fab & Assembly Site Process Change Notification (PCN) Qualification & Reliability Data Solder (PbSn) Lead Finish is standard Enhanced Diminishing Manufacturing Sources (DMS) Support Features ■ ■ ■ ■ ■ ■ ■ Wide unity gain bandwidth: 300MHz Low noise: 2nV/ Low Distortion: −65/−74dBc (10MHz) Settling time: 12ns to 0.1% Wide supply voltage range: ±2.5V to ±6V High output current: ±85mA Improved replacement for CLC428 Applications ■ ■ ■ ■ High speed dual op amp Low noise integrators Selected Military Applications Selected Avionics Applications Ordering Information Part Number LMH6628MAEP (Note 1, Note 2) VID Part Number V62/04624-01 TBD NS Package Number (Note 3) M08A TBD Note 1: For the following (Enhanced Plastic) version, check for availability: LMH6628MAXEP. Parts listed with an "X" are provided in Tape & Reel and parts without an "X" are in Rails. Note 2: FOR ADDITIONAL ORDERING AND PRODUCT INFORMATION, PLEASE VISIT THE ENHANCED PLASTIC WEB SITE AT: www.national.com/ mil Note 3: Refer to package details under Physical Dimensions VIP10™ is a trademark of National Semiconductor Corporation. © 2010 National Semiconductor Corporation 200886 Print Date/Time: 2010/10/15 15:22:20 www.national.com 200886 Version 4 Revision 2 LMH6628EP Enhanced Plastic Connection Diagram 8-Pin SOIC 20088635 Top View www.national.com 200886 Version 4 Revision 2 2 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic Absolute Maximum Ratings (Note 4) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 7) Human Body Model Machine Model Supply Voltage Short Circuit Current Common-Mode Input Voltage Differential Input Voltage 2kV 200V 13.5 (Note 6) V+ - V− V+ - V− (Note 5) Maximum Junction Temperature Storage Temperature Range Lead Temperature (soldering 10 sec) +150°C −65°C to +150°C +300°C Operating Ratings Thermal Resistance (Note 8) Package (θJC) (Note 4) (θJA) 145°C/W −40°C to +85°C ±2.5V to ±6V SOIC 65°C/W Temperature Range Nominal Supply Voltage Electrical Characteristics Symbol GB SSBW SSBW GFL GFP GFR LPD TR TS OS SR HD2 HD3 VN IN XTLKA GOL VIO DVIO IBN DIBN IOS IOSD PSRR CMRR Parameter Gain Bandwidth Product -3dB Bandwidth, AV = +1 -3dB Bandwidth, AV = +2 Gain Flatness Peaking Rolloff Linear Phase Deviation Rise and Fall Time Settling Time Overshoot Slew Rate 2nd Harmonic Distortion 3rd Harmonic Distortion Equivalent Input Noise Voltage Current Crosstalk Open-Loop Gain Input Offset Voltage Average Drift Input Bias Current Average Drift Input Offset Current Average Drift Power Supply Rejection Ratio Common-Mode Rejection Ratio VCC = ±5V, AV = +2V/V, RF = 100Ω, RG = 100Ω, RL = 100Ω; unless otherwise specified. Boldface limits apply at the temperature extremes. Conditions VO < 0.5VPP VO < 0.5VPP VO < 0.5VPP VO< 0.5VPP DC to 200MHz DC to 20MHz DC to 20MHz 1V Step 2V Step to 0.1% 1V Step 4V Step 1VPP, 10MHz 1VPP, 10MHz 1MHz to 100MHz 1MHz to 100MHz Input Referred, 10MHz 56 53 300 0.0 .1 .1 4 12 1 550 −65 −74 2 2 −62 63 ±.5 5 ±.7 150 0.3 5 60 46 57 54 70 62 ±6 ±20 ±30 ±2 ±2.6 dB dB deg ns ns % V/µs dBc dBc 180 Min Typ 200 300 100 Max Units MHz MHz MHz Frequency Domain Response Time Domain Response Distortion And Noise Response nV/ pA/ dB dB mV µV/°C µA nA/°C µA nA/°C dB dB Static, DC Performance 3 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic Symbol ICC Parameter Supply Current Conditions Per Channel, RL = ∞ Min 7.5 7.0 Typ 9 Max 12 12.5 Units mA Miscellaneous Performance RIN CIN ROUT VO VOL CMIR IO Input Voltage Range Output Current Input Resistance Input Capacitance Output Resistance Output Voltage Range Common-Mode Differential-Mode Common-Mode Differential-Mode Closed-Loop RL = ∞ RL = 100Ω Common- Mode ±50 ±3.2 ±3.1 500 200 1.5 1.5 .1 ±3.8 ±3.5 ±3.7 ±85 kΩ kΩ pF pF Ω V V V mA Note 4: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables. Note 5: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. See Note 6 for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Note 6: Output is short circuit protected to ground, however maximum reliability is obtained if output current does not exceed 160mA. Note 7: Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF. Note 8: The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)-TA)/ θJA. All numbers apply for packages soldered directly onto a PC board. Typical Performance Characteristics specified) Non-Inverting Frequency Response (TA = +25°, AV = +2, VCC = ±5V, Rf =100Ω, RL = 100Ω, unless Inverting Frequency Response 20088615 20088613 www.national.com 200886 Version 4 Revision 2 4 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic Frequency Response vs. Load Resistance Frequency Response vs. Output Amplitude 20088625 20088610 Frequency Response vs. Capacitive Load Gain Flatness & Linear Phase 20088616 20088624 5 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic Channel Matching Channel to Channel Crosstalk 20088614 20088609 Pulse Response (VO = 2V) Pulse Response (VO = 100mV) 20088611 20088612 www.national.com 200886 Version 4 Revision 2 6 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic 2nd Harmonic Distortion vs. Output Voltage 3rd Harmonic Distortion vs. Output Voltage 20088607 20088608 2nd & 3rd Harmonic Distortion vs. Frequency PSRR and CMRR (±5V) 20088617 20088622 7 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic PSRR and CMRR (±2.5V) Closed Loop Output Resistance (±2.5V) 20088623 20088618 Closed Loop Output Resistance (±5V) Open Loop Gain & Phase (±2.5V) 20088619 20088621 www.national.com 200886 Version 4 Revision 2 8 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic Open Loop Gain & Phase (±5V) Recommended RS vs. CL 20088620 20088626 DC Errors vs. Temperature Maximum VO vs. RL 20088646 20088645 9 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic 2-Tone, 3rd Order Intermodulation Intercept Voltage & Current Noise vs. Frequency 20088644 20088647 Settling Time vs. Accuracy 20088648 Application Section LOW NOISE DESIGN Ultimate low noise performance from circuit designs using the LMH6628EP requires the proper selection of external resistors. By selecting appropriate low valued resistors for RF and RG, amplifier circuits using the LMH6628EP can achieve output noise that is approximately the equivalent voltage input multiplied by the desired gain (AV). noise of 2nV/ DC BIAS CURRENTS AND OFFSET VOLTAGES Cancellation of the output offset voltage due to input bias currents is possible with the LMH6628EP. This is done by making the resistance seen from the inverting and non-inverting inputs equal. Once done, the residual output offset voltage will be the input offset voltage (VOS) multiplied by the desired gain (AV). National Application Note OA-7 offers several solutions to further reduce the output offset. OUTPUT AND SUPPLY CONSIDERATIONS With ±5V supplies, the LMH6628EP is capable of a typical output swing of ±3.8V under a no-load condition. Additional output swing is possible with slightly higher supply voltages. For loads of less than 50Ω, the output swing will be limited by the LMH6628EP's output current capability, typically 85mA. Output settling time when driving capacitive loads can be improved by the use of a series output resistor. See the plot labeled "RS vs. CL" in the Typical Performance section. LAYOUT Proper power supply bypassing is critical to insure good high frequency performance and low noise. De-coupling capacitors of 0.1μF should be placed as close as possible to the power supply pins. The use of surface mounted capacitors is recommended due to their low series inductance. A good high frequency layout will keep power supply and ground traces away from the inverting input and output pins. Parasitic capacitance from these nodes to ground causes frequency response peaking and possible circuit oscillation. See OA-15 for more information. National suggests the 730036 10 www.national.com 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic (SOIC) dual op amp evaluation board as a guide for high frequency layout and as an aid in device evaluation. ANALOG DELAY CIRCUIT (ALL-PASS NETWORK) The circuit in Figure 1 implements an all-pass network using the LMH6628EP. A wide bandwidth buffer (LM7121) drives the circuit and provides a high input impedance for the source. As shown in Figure 2, the circuit provides a 13.1ns delay (with R = 40.2Ω, C = 47pF). RF and RG should be of equal and low value for parasitic insensitive operation. 20088601 FIGURE 1. In the circuit shown in Figure 3, one of the LMH6628EP's amps is used as a "driver" and the other as a difference "receiver" amplifier. The output impedance of the "driver" is essentially zero. The two R's are chosen to match the characteristic impedance of the transmission line. The "driver" op amp gain can be selected for unity or greater. Receiver amplifier A2 (B2) is connected across R and forms differential amplifier for the signals transmitted by driver A2 (B2). If RF equals RG, receiver A2 (B1) will then reject the signals from driver A1 (B1) and pass the signals from driver B1 (A1). 20088602 FIGURE 2. Delay Circuit Response to 0.5V Pulse The circuit gain is +1 and the delay is determined by the following equations. 20088603 (1) FIGURE 3. (2) where Td is the delay of the op amp at AV = +1. The LMH6628EP provides a typical delay of 2.8ns at its −3dB point. FULL DUPLEX DIGITAL OR ANALOG TRANSMISSION Simultaneous transmission and reception of analog or digital signals over a single coaxial cable or twisted-pair line can reduce cabling requirements. The LMH6628EP's wide bandwidth and high common-mode rejection in a differential amplifier configuration allows full duplex transmission of video, telephone, control and audio signals. 11 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 The output of the receiver amplifier will be: (3) Care must be given to layout and component placement to maintain a high frequency common-mode rejection. The plot of Figure 4 shows the simultaneous reception of signals transmitted at 1MHz and 10MHz. www.national.com LMH6628EP Enhanced Plastic 20088631 20088637 FIGURE 4. POSITIVE PEAK DETECTOR The LMH6628EP's dual amplifiers can be used to implement a unity-gain peak detector circuit as shown in Figure 5. FIGURE 6. A current source, built around Q1, provides the necessary bias current for the second amplifier and prevents saturation when power is applied. The resistor, R, closes the loop while diode D2 prevents negative saturation when VIN is less than VC. A MOS-type switch (not shown) can be used to reset the capacitor's voltage. The maximum speed of detection is limited by the delay of the op amps and the diodes. The use of Schottky diodes will provide faster response. ADJUSTABLE OR BANDPASS EQUALIZER A "boost" equalizer can be made with the LMH6628EP by summing a bandpass response with the input signal, as shown in Figure 7. 20088605 FIGURE 5. The acquisition speed of this circuit is limited by the dynamic resistance of the diode when charging Chold. A plot of the circuit's performance is shown in Figure 6 with a 1MHz sinusoidal input. FIGURE 7. The overall transfer function is shown in Eq. 5. 20088606 (4) To build a boost circuit, use the design equations Eq. 6 and Eq. 7. (5) www.national.com 200886 Version 4 Revision 2 12 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic (6) Select R2 and C using Eq. 6. Use reasonable values for high frequency circuits - R2 between 10Ω and 5kΩ, C between 10pF and 2000pF. Use Eq. 7 to determine the parallel combination of Ra and Rb. Select Ra and Rb by either the 10Ω to 5kΩ criteria or by other requirements based on the impedance Vin is capable of driving. Finish the design by determining the value of K from Eq. 8. (7) Figure 8 shows an example of the response of the circuit of Figure 9, where fo is 2.3MHz. The component values are as follows: Ra=2.1kΩ, Rb = 68.5Ω, R2 = 4.22kΩ, R = 500Ω, KR = 50Ω, C = 120pF. 20088643 FIGURE 8. 13 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic Physical Dimensions inches (millimeters) unless otherwise noted 8-Pin SOIC NS Package Number M08A www.national.com 200886 Version 4 Revision 2 14 Print Date/Time: 2010/10/15 15:22:20 LMH6628EP Enhanced Plastic Notes 15 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20 www.national.com LMH6628EP Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: www.national.com Products Amplifiers Audio Clock and Timing Data Converters Interface LVDS Power Management Switching Regulators LDOs LED Lighting Voltage References PowerWise® Solutions Temperature Sensors PLL/VCO www.national.com/amplifiers www.national.com/audio www.national.com/timing www.national.com/adc www.national.com/interface www.national.com/lvds www.national.com/power www.national.com/switchers www.national.com/ldo www.national.com/led www.national.com/vref www.national.com/powerwise WEBENCH® Tools App Notes Reference Designs Samples Eval Boards Packaging Green Compliance Distributors Quality and Reliability Feedback/Support Design Made Easy Design Support www.national.com/webench www.national.com/appnotes www.national.com/refdesigns www.national.com/samples www.national.com/evalboards www.national.com/packaging www.national.com/quality/green www.national.com/contacts www.national.com/quality www.national.com/feedback www.national.com/easy www.national.com/solutions www.national.com/milaero www.national.com/solarmagic www.national.com/training Applications & Markets Mil/Aero PowerWise® Design University Serial Digital Interface (SDI) www.national.com/sdi www.national.com/wireless www.national.com/tempsensors SolarMagic™ THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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As used herein: Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness. National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. Copyright© 2010 National Semiconductor Corporation For the most current product information visit us at www.national.com National Semiconductor Americas Technical Support Center Email: support@nsc.com www.national.com Tel: 1-800-272-9959 National Semiconductor Europe Technical Support Center Email: europe.support@nsc.com National Semiconductor Asia Pacific Technical Support Center Email: ap.support@nsc.com National Semiconductor Japan Technical Support Center Email: jpn.feedback@nsc.com 200886 Version 4 Revision 2 Print Date/Time: 2010/10/15 15:22:20
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