LMH6702 Ultra Low Distortion, Wideband Op Amp
June 2003
LMH6702 Ultra Low Distortion, Wideband Op Amp
General Description
The LMH6702 is a very wideband, DC coupled monolithic operational amplifier designed specifically for wide dynamic range systems requiring exceptional signal fidelity. Benefiting from National’s current feedback architecture, the LMH6702 offers unity gain stability at exceptional speed without need for external compensation. With its 720MHz bandwidth (AV = 2V/V, VO = 2VPP), 10-bit distortion levels through 60MHz (RL = 100Ω), 1.83nV/ input referred noise and 12.5mA supply current, the LMH6702 is the ideal driver or buffer for high-speed flash A/D and D/A converters. Wide dynamic range systems such as radar and communication receivers, requiring a wideband amplifier offering exceptional signal purity, will find the LMH6702’s low input referred noise and low harmonic and intermodulation distortion make it an attractive high speed solution. The LMH6702 is constructed using National’s VIP10™ complimentary bipolar process and National’s proven current feedback architecture. The LMH6702 is available in SOIC and SOT23-5 packages.
Features
VS = ± 5V, TA = 25˚C, AV = +2V/V, RL = 100Ω, VOUT = 2VPP, Typical unless Noted: n 2nd/3rd Harmonics (5MHz, SOT23-5) −100/−96dBc n −3dB Bandwidth (VOUT = 2VPP) 720MHz n Low noise 1.83nV/ n Fast settling to 0.1% 13.4ns n Fast slew rate 3100V/µs n Supply current 12.5mA n Output current 80mA n Low Intermodulation Distortion (75MHz) −67dBc n Improved Replacement for CLC409 and CLC449
Applications
n n n n n n Flash A/D driver D/A transimpedance buffer Wide dynamic range IF amp Radar/communication receivers Line driver High resolution video
Inverting Frequency Response
Harmonic Distortion vs. Load and Frequency
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© 2003 National Semiconductor Corporation
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LMH6702
Absolute Maximum Ratings
(Note 1)
Human Body Model Machine Model Storage Temperature Range
2000V 200V −65˚C to +150˚C
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VS IOUT Common Mode Input Voltage Maximum Junction Temperature Storage Temperature Range Soldering Information Infrared or Convection (20 sec.) Wave Soldering (10 sec.) ESD Tolerance (Note 4) 235˚C 260˚C
± 6.75V
(Note 3) V− to V+ +150˚C −65˚C to +150˚C
Operating Ratings (Note 1)
Thermal Resistance Package 8-Pin SOIC 5-Pin SOT23 Operating Temperature Nominal Supply Voltage (θJC) 75˚C/W 120˚C/W (θJA) 160˚C/W 187˚C/W −40˚C to +85˚C
± 5V to ± 6V
Electrical Characteristics (Note 2)
AV = +2, VS = ± 5V, RL = 100Ω, RF = 237Ω; unless specified Symbol Parameter Conditions Min (Note 6) Typ (Note 6) 720 480 140 120 0.09 0.024/0.021 0.004/0.007 0.87/0.77 1.70/1.70 0 3100 13.4 −100/ −87 −79/ −72 −63/ −64 −96/ −98 −88/ −82 −70/ −65 −67 1.83 18.5 3.0 −158 35
2
Max (Note 6)
Units
Frequency Domain Performance SSBWLG LSBWLG SSBWHG GF0.1dB LPD DG DP TRS/TRL OS SR Ts HD2L HD2 HD2H HD3L HD3 HD3H OIM3 VN IN INN SNF INV IMD Input Referred Voltage Noise Input Referred Inverting Noise Current Input Referred Non-Inverting Noise Current Total Input Noise Floor Total Integrated Input Noise 3rd Harmonic Distortion 0.1dB Gain Flatness Linear Phase Deviation Differential Gain Differential Phase Rise and Fall Time Overshoot Slew Rate Settling Time to 0.1% 2nd Harmonic Distortion -3dB Bandwidth VOUT = 2VPP VOUT = 4VPP VOUT = 2VPP, AV = +10 VOUT = 2VPP DC to 100MHz RL =150Ω, 3.58MHz/4.43MHz RL = 150Ω, 3.58MHz/4.43MHz 2V Step 6V Step 2V Step 6VPP, 40% to 60% (Note 5) 2V Step 2VPP, 5MHz (Note 9) (SOT23-5/SOIC) 2VPP, 20MHz (Note 9) (SOT23-5/SOIC) 2VPP, 60MHz (Note 9) (SOT23-5/SOIC) 2VPP, 5MHz (Note 9) (SOT23-5/SOIC) 2VPP, 20MHz (Note 9) (SOT23-5/SOIC) 2VPP, 60MHz (Note 9) (SOT23-5/SOIC) 75MHz, PO = 10dBm/ tone MHz MHz deg % deg ns ns % V/µs ns dBc dBc dBc dBc dBc dBc dBc nV/ pA/ pA/ dBm1Hz µV
Time Domain Response
Distortion And Noise Response
> 1MHz > 1MHz > 1MHz > 1MHz
1MHz to 150MHz
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LMH6702
Electrical Characteristics (Note 2)
Symbol Parameter
(Continued) AV = +2, VS = ± 5V, RL = 100Ω, RF = 237Ω; unless specified Conditions Min (Note 6) Typ (Note 6) Max (Note 6) Units
Static, DC Performance VIO DVIO IBN DIBN IBI DIBI PSRR CMRR ICC Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current Input Bias Current Average Drift Input Bias Current Input Bias Current Average Drift Power Supply Rejection Ratio Common Mode Rejection Ration Supply Current (Note 8) Non-Inverting (Note 7) Non-Inverting (Note 8) Inverting (Note 7) Inverting (Note 8) DC DC RL = ∞ 47 45 45 44 11.0 10.0
± 1.0
−13 −6 +40 −8 −10 52 48 12.5
± 4.5 ± 6.0
mV µV/˚C
± 15 ± 21 ± 30 ± 34
µA nA/˚C µA nA/˚C dB dB
16.1 17.5
mA
Miscellaneous Performance RIN CIN ROUT VOL CMIR IO Input Resistance Input Capacitance Output Resistance Output Voltage Range Input Voltage Range Output Current Non-Inverting Non-Inverting Closed Loop RL = 100Ω Common Mode 1.4 1.6 30 MΩ pF mΩ V V mA
± 3.3 ± 3.2 ± 1.9
50
± 3.5 ± 2.2
80
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables. Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Min/Max ratings are based on production testing unless otherwise specified. Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations. Note 4: Human body model: 1.5kΩ in series with 100pF. Machine model: 0Ω in series with 200pF. Note 5: Slew Rate is the average of the rising and falling edges. Note 6: Typical numbers are the most likely parametric norm. Bold numbers refer to over temperature limits. Note 7: Negative input current implies current flowing out of the device. Note 8: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change. Note 9: Harmonic distortion is strongly influenced by package type (SOT23-5 or SOIC). See Application Note section under "Harmonic Distortion" for more information.
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LMH6702
Connection Diagrams
8-Pin SOIC 5-Pin SOT23
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Top View
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Top View
Ordering Information
Package 8-pin SOIC 5-Pin SOT23 Part Number LMH6702MA LMH6702MAX LMH6702MF LMH6702MFX A83A Package Marking LMH6702MA Transport Media 95 Units/Rail 2.5k Units Tape and Reel 1k Units Tape and Reel 3k Units Tape and Reel NSC Drawing M08A MF05A
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LMH6702
Typical Performance Characteristics
fied). Non-Inverting Frequency Response
(TA = 25˚C, VS = ± 5V, RL = 100Ω, Rf = 237Ω; Unless SpeciInverting Frequency Response
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Frequency Response for Various RL’s, AV = +2
Frequency Response for Various RL’s, AV = +4
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Step Response, 2VPP
Step Response, 6VPP
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LMH6702
Typical Performance Characteristics (TA = 25˚C, VS = ±5V, RL = 100Ω, Rf = 237Ω; Unless
Specified). (Continued) Harmonic Distortion vs. Load and Frequency (SOIC package)
Percent Settling vs. Time
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2 Tone 3rd Order Spurious Level (SOIC package)
RS and Settling Time vs. CL
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HD2 vs. Output Power (across 100Ω) (SOIC package)
HD3 vs. Output Power (across 100Ω) (SOIC package)
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LMH6702
Typical Performance Characteristics (TA = 25˚C, VS = ±5V, RL = 100Ω, Rf = 237Ω; Unless
Specified). (Continued) Input Offset for 3 Representative Units Inverting Input Bias for 3 Representative Units
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Non-Inverting Input Bias for 3 Representative Units
Noise
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CMRR, PSRR, ROUT
Transimpedance
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LMH6702
Typical Performance Characteristics (TA = 25˚C, VS = ±5V, RL = 100Ω, Rf = 237Ω; Unless
Specified). (Continued) DG/DP (NTSC) DG/DP (PAL)
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LMH6702
Application Section
FEEDBACK RESISTOR monic distortion. For absolute minimum distortion levels, it is also advisable to keep the supply decoupling currents (ground connections to CPOS, and CNEG in Figure 1 and Figure 2) separate from the ground connections to sensitive input circuitry (such as RG, RT, and RIN ground connections). Splitting the ground plane in this fashion and separately routing the high frequency current spikes on the decoupling caps back to the power supply (similar to "Star Connection" layout technique) ensures minimum coupling back to the input circuitry and results in best harmonic distortion response (especially 2nd order distortion). If this lay out technique has not been observed on a particular application board, designer may actually find that supply decoupling caps could adversely affect HD2 performance by increasing the coupling phenomenon already mentioned. Figure 3 below shows actual HD2 data on a board where the ground plane is "shared" between the supply decoupling capacitors and the rest of the circuit. Once these capacitors are removed, the HD2 distortion levels reduce significantly, especially between 10MHz-20MHz, as shown in Figure 3 below:
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FIGURE 1. Recommended Non-Inverting Gain Circuit
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FIGURE 3. Decoupling Current Adverse Effect on a Board with Shared Ground Plane At these extremely low distortion levels, the high frequency behavior of decoupling capacitors themselves could be significant. In general, lower value decoupling caps tend to have higher resonance frequencies making them more effective for higher frequency regions. A particular application board which has been laid out correctly with ground returns "split" to minimize coupling, would benefit the most by having low value and higher value capacitors paralleled to take advantage of the effective bandwidth of each and extend low distortion frequency range. Another important variable in getting the highest fidelity signal from the LMH6702 is the package itself. As already noted, coupling between high frequency current transients on supply lines and the device input can lead to excess harmonic distortion. An important source of this coupling is in fact through the device bonding wires. A smaller package, in general, will have shorter bonding wires and therefore lower coupling. This is true in the case of the SOT23-5 compared to the SOIC package where a marked improvement in HD can be measured in the SOT23-5 package. Figure 4 below shows the HD comparing SOT23-5 to SOIC package:
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FIGURE 2. Recommended Inverting Gain Circuit The LMH6702 achieves its excellent pulse and distortion performance by using the current feedback topology. The loop gain for a current feedback op amp, and hence the frequency response, is predominantly set by the feedback resistor value. The LMH6702 is optimized for use with a 237Ω feedback resistor. Using lower values can lead to excessive ringing in the pulse response while a higher value will limit the bandwidth. Application Note OA-13 discusses this in detail along with the occasions where a different RF might be advantageous. HARMONIC DISTORTION The LMH6702 has been optimized for exceptionally low harmonic distortion while driving very demanding resistive or capacitive loads. Generally, when used as the input amplifier to very high speed flash ADCs, the distortions introduced by the converter will dominate over the low LMH6702 distortions shown in the Typical Performance Characteristics section. The capacitor CSS, shown across the supplies in Figure 1 and Figure 2, is critical to achieving the lowest 2nd har-
LMH6702
Application Section
(Continued)
CAPACITIVE LOAD DRIVE Figure 5 shows a typical application using the LMH6702 to drive an ADC.
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FIGURE 5. Input Amplifier to ADC The series resistor, RS, between the amplifier output and the ADC input is critical to achieving best system performance. This load capacitance, if applied directly to the output pin, can quickly lead to unacceptable levels of ringing in the pulse response. The plot of "RS and Settling Time vs. CL" in the Typical Performance Characteristics section is an excellent starting point for selecting RS. The value derived in that plot minimizes the step settling time into a fixed discrete capacitive load with the output driving a very light resistive load (1kΩ). Sensitivity to capacitive loading is greatly reduced once the output is loaded more heavily. Therefore, for cases where the output is heavily loaded, RS value may be reduced. The exact value may best be determined experimentally for these cases. In applications where the LMH6702 is replacing the CLC409, care must be taken when the device is lightly loaded and some capacitance is present at the output. Due to the much higher frequency response of the LMH6702 compared to the CLC409, there could be increased susceptibility to low value output capacitance (parasitic or inherent to the board layout or otherwise being part of the output load). As already mentioned, this susceptibility is most noticeable when the LMH6702’s resistive load is light. Parasitic capacitance can be minimized by careful lay out. Addition of an output snubber R-C network will also help by increasing the high frequency resistive loading. Referring back to Figure 5, it must be noted that several additional constraints should be considered in driving the capacitive input of an ADC. There is an option to increase RS, band-limiting at the ADC input for either noise or Nyquist band-limiting purposes. Increasing RS too much, however, can induce an unacceptably large input glitch due to switching transients coupling through from the "convert" signal. Also, CIN is oftentimes a voltage dependent capacitance. This input impedance non-linearity will induce distortion terms that will increase as RS is increased. Only slight adjustments up or down from the recommended RS value should therefore be attempted in optimizing system performance.
FIGURE 4. SOIC and SOT23-5 Packages Distortion Terms Compared The LMH6702 data sheet shows both SOT23 and SOIC data in the Electrical Characteristic section to aid in selecting the right package. The Typical Performance Characteristics section shows SOIC package plots only. 2-TONE 3rd ORDER INTERMODULATION The 2-tone, 3rd order spurious plot shows a relatively constant difference between the test power level and the spurious level with the difference depending on frequency. The LMH6702 does not show an intercept type performance, (where the relative spurious levels change at a 2X rate vs. the test tone powers), due to an internal full power bandwidth enhancement circuit that boosts the performance as the output swing increases while dissipating negligible quiescent power under low output power conditions. This feature enhances the distortion performance and full power bandwidth to match that of much higher quiescent supply current parts.
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LMH6702
Application Section
DC ACCURACY AND NOISE
(Continued)
Example below shows the output offset computation equation for the non-inverting configuration using the typical bias current and offset specifications for AV = + 2: Output Offset : VO = ( ± IBN · RIN ± VIO) (1 + RF/RG) ± IBI · RF Where RIN is the equivalent input impedance on the noninverting input. Example computation for AV = +2, RF = 237Ω, RIN = 25Ω: VO = ( ± 6µA · 25Ω ± 1mV) (1 + 237/237) ± 8µA · 237 = ± 4.20mV A good design, however, should include a worst case calculation using Min/Max numbers in the data sheet tables, in order to ensure "worst case" operation. Further improvement in the output offset voltage and drift is possible using the composite amplifiers described in Application Note OA-7. The two input bias currents are physically unrelated in both magnitude and polarity for the current feedback topology. It is not possible, therefore, to cancel their effects by matching the source impedance for the two inputs (as is commonly done for matched input bias current devices). The total output noise is computed in a similar fashion to the output offset voltage. Using the input noise voltage and the
two input noise currents, the output noise is developed through the same gain equations for each term but combined as the square root of the sum of squared contributing elements. See Application Note OA-12 for a full discussion of noise calculations for current feedback amplifiers. PRINTED CIRCUIT LAYOUT Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and possible circuit oscillations (see Application Note OA-15 for more information). National Semiconductor suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing and characterization: Device LMH6702MF LMH6702MA Package SOT23-5 SOIC Evaluation Board Part Number CLC730216 CLC730227
These free evaluation boards are shipped when a device sample request is placed with National Semiconductor.
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LMH6702
Physical Dimensions
unless otherwise noted
inches (millimeters)
8-Pin SOIC NS Package Number M08A
5-Pin SOT23 NS Package Number MA05A
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LMH6702 Ultra Low Distortion, Wideband Op Amp
Notes
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