LMV841 Single / LMV844 Quad CMOS Input, RRIO, Wide Supply Range Operational Amplifiers
March 2007
LMV841 / LMV844 CMOS Input, RRIO, Wide Supply Range Operational Amplifiers
General Description
The LMV841 and LMV844 are low-voltage and low-power operational amplifiers that operate with supply voltages ranging from 2.7V to 12V and have rail-to-rail input and output capability. The LMV841 and LMV844 are low offset voltage and low supply current amplifiers with MOS inputs, characteristics that make the LMV841/LMV844 ideal for sensor interface and battery powered applications. The LMV841 is offered in the space saving 5-pin SC70 package and the quad LMV844 comes in the 14-Pin TSSOP package. These small packages are solutions for area constrained PC boards and portable electronics.
Features
Unless otherwise noted, typical values at TA = 25°C, V+ = 5V ■ Space saving 5-Pin SC70 package ■ Supply voltage range 2.7V to 12V ■ Guaranteed at 3.3V, 5V and ±5V 1 mA per channel ■ Low supply current 4.5 MHz ■ Unity gain bandwidth 100 dB ■ Open loop gain 500 μV max ■ Input offset voltage 0.3 pA ■ Input bias current 100 dB ■ CMRR 20 nV/ ■ Input voltage noise −40°C to 125°C ■ Temperature range ■ Rail-to-rail input ■ Rail-to-rail output
Applications
■ ■ ■ ■ ■ ■
High impedance sensor interface Battery powered instrumentation High gain amplifiers DAC buffer Instrumentation amplifiers Active Filters
Typical Applications
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© 2007 National Semiconductor Corporation
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model Machine Model VIN Differential Supply Voltage (V+ – V−) Voltage at Input/Output Pins Input Current Storage Temperature Range 2 kV 200V ±300 mV 13.2V V++0.3V, V− −0.3V 10 mA −65°C to +150°C (Note 4)
Junction Temperature (Note 3) Soldering Information Infrared or Convection (20 sec) Wave Soldering Lead Temp. (10 sec)
+150°C 235°C 260°C
Operating Ratings
Temperature Range (Note 3) Supply Voltage (V+ – V−)
(Note 1) −40°C to +125°C 2.7V to 12V 334 °C/W 110 °C/W
Package Thermal Resistance (θJA (Note 3)) 5-Pin SC70 14-Pin TSSOP
3.3V Electrical Characteristics
Symbol VOS TCVOS IB IOS CMRR Parameter Input Offset Voltage Input Offset Voltage Drift (Note 7) Input Bias Current (Notes 7, 8) Input Offset Current Common Mode Rejection Ratio LMV841 Common Mode Rejection Ratio LMV844 PSRR CMVR AVOL Power Supply Rejection Ratio Input Common-Mode Voltage Range Large Signal Voltage Gain
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL > 10 MΩ to V+/2. Boldface limits apply at the temperature extremes. Conditions Min (Note 6) Typ (Note 5) 8 0.5 0.3 40 0V ≤ VCM ≤ 3.3V 84 80 77 75 2.7V ≤ V+ ≤ 12V, VO = V+/2 CMRR ≥ 50 dB RL = 2 kΩ VO = 0.3V to 3.0V RL = 10 kΩ VO = 0.2V to 3.1V VO Output Swing High, measured from V+ RL = 2 kΩ to V+/2 RL = 10 kΩ to V+/2 Output Swing Low, measured from V− RL = 2 kΩ to V+/2 RL = 10 kΩ to V+/2 IO Output Short Circuit Current (Notes 3, 9) Sourcing VO = V+/2 VIN = 100 mV Sinking VO = V+/2 VIN = −100 mV IS SR GBW Φm Supply Current Slew Rate (Note 10) Gain Bandwidth Product Phase Margin Per Channel AV = +1, VO = 2.3 VPP 10% to 90% 20 15 20 15 86 82 –0.1 100 96 100 96 118 129 60 32 70 35 30 30 0.98 2.5 4.5 67 1.5 2 mA 80 120 50 70 100 120 65 75 dB 100 100 100 3.4 dB Max (Note 6) ±500 ±800 ±5 10 300 Units μV μV/°C pA fA
dB V
mV
mV
mA V/μs MHz Deg
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Symbol en ROUT THD+N CIN
Parameter Input-Referred Voltage Noise Open Loop Output Impedance Total Harmonic Distortion + Noise Input Capacitance (Note 4) f = 1 kHz f = 3 MHz
Conditions
Min (Note 6)
Typ (Note 5) 20 70 0.005 13
Max (Note 6)
Units nV/ Ω % pF
f = 1 kHz , AV = 1 RL = 10 kΩ
5V Electrical Characteristics
Symbol VOS TCVOS IB IOS CMRR Parameter Input Offset Voltage Input Offset Voltage Drift (Note 7) Input Bias Current (Notes 7, 8) Input Offset Current Common Mode Rejection Ratio LMV841 Common Mode Rejection Ratio LMV844 PSRR CMVR AVOL Power Supply Rejection Ratio Input Common-Mode Voltage Range Large Signal Voltage Gain
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL > 10 MΩ to V+/2. Boldface limits apply at the temperature extremes. Conditions Min (Note 6) Typ (Note 5) −5 0.35 0.3 40 0V ≤ VCM ≤ 5V 86 80 81 79 2.7V ≤ V+ ≤ 12V, VO = V+/2 CMRR ≥ 50 dB RL = 2 kΩ VO = 0.3V to 4.7V RL = 10 kΩ VO = 0.2V to 4.8V VO Output Swing High, measured from V+ RL = 2 kΩ to V+/2 RL = 10 kΩ to V+/2 Output Swing Low, measured from VRL = 2 kΩ to V+/2 RL = 10 kΩ to V+/2 IO Output Short Circuit Current (Notes 3, 9) Sourcing VO = V+/2 VIN = 100 mV Sinking VO = V+/2 VIN = −100 mV IS SR GBW Φm en ROUT Supply Current Slew Rate (Note 10) Gain Bandwidth Product Phase Margin Input-Referred Voltage Noise Open Loop Output Impedance f = 1 kHz f = 3 MHz Per Channel AV = +1, VO = 4 VPP 10% to 90% 20 15 20 15 86 82 −0.2 100 96 100 96 118 129 70 40 82 41 30 30 1.02 2.5 4.5 67 20 70 1.5 2 mA 100 120 50 70 120 140 70 80 dB 100 100 100 5.2 dB Max (Note 6) ±500 ±800 ±5 10 300 Units μV μV/°C pA fA
dB V
mV
mV
mA V/μs MHz Deg nV/ Ω
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Symbol THD+N CIN
Parameter Total Harmonic Distortion + Noise Input Capacitance (Note 4)
Conditions f = 1 kHz , AV = 1 RL = 10 kΩ
Min (Note 6)
Typ (Note 5) 0.003 13
Max (Note 6)
Units
% pF
±5V Electrical Characteristics
Symbol VOS TCVOS IB IOS CMRR Parameter Input Offset Voltage Input Offset Voltage Drift (Note 7) Input Bias Current (Notes 7, 8) Input Offset Current Common Mode Rejection Ratio LMV841 Common Mode Rejection Ratio LMV844 PSRR CMVR AVOL Power Supply Rejection Ratio Input Common-Mode Voltage Range Large Signal Voltage Gain
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 5V, V− = –5V, VCM = 0V, and RL > 10 MΩ to VCM. Boldface limits apply at the temperature extremes. Conditions Min (Note 6) Typ (Note 5) −17 0.25 0.3 40 –5V ≤ VCM ≤ 5V 86 80 86 80 2.7V ≤ V+ ≤ 12V, VO = 0V CMRR ≥ 50 dB RL = 2 kΩ VO = −4.7V to 4.7V RL = 10 kΩ VO = −4.8V to 4.8V VO Output Swing High, measured from V+ RL = 2 kΩ to 0V RL = 10 kΩ to 0V Output Swing Low, measured from V− RL = 2 kΩ to 0V RL = 10 kΩ to 0V IO Output Short Circuit Current (Notes 3, 9) Sourcing VO = 0V VIN = 100 mV Sinking VO = 0V VIN = −100 mV IS SR GBW Φm en ROUT THD+N CIN Supply Current Slew Rate (Note 10) Gain Bandwidth Product Phase Margin Input-Referred Voltage Noise Open Loop Output Impedance Total Harmonic Distortion + Noise Input Capacitance f = 1 kHz f = 3 MHz f = 1 kHz , AV = 1 RL = 10 kΩ 13 Per Channel AV = +1, VO = 9 VPP 10% to 90% 20 15 20 15 86 82 −5.2 100 96 100 96 118 129 105 50 115 53 30 30 1.11 2.5 4.5 67 20 70 0.006 1.7 2 mA 130 155 75 95 160 200 80 100 dB 100 100 100 5.2 dB Max (Note 6) ±500 ±800 ±5 10 300 Units μV μV/°C pA fA
dB V
mV
mV
mA V/μs MHz Deg nV/ Ω % pF
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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables. Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) FieldInduced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). Note 3: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. Note 4: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device. Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality control (SQC) method. Note 7: This parameter is guaranteed by design and/or characterization and is not tested in production. Note 8: Positive current corresponds to current flowing into the device. Note 9: Short circuit test is a momentary test. Note 10: Number specified is the slower of positive and negative slew rates.
Connection Diagrams
5-Pin SC70 14–Pin TSSOP
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Top View
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Top View
Ordering Information
Package 5-Pin SC70 14-Pin TSSOP Part Number LMV841MG LMV841MGX LMV844MT LMV844MTX Package Marking A97 LMV844MT Transport Media 1k Units Tape and Reel 3k Units Tape and Reel 94 Units/Rail 2.5k Units Tape and Reel NSC Drawing MAA05A MTC14
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Typical Performance Characteristics
VOS vs. VCM Over Temperature at 3.3V
At TA = 25°C, RL = 10 kΩ, VS = 5V. Unless otherwise specified. VOS vs. VCM Over Temperature at 5.0V
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VOS vs. VCM Over Temperature at ±5.0V
VOS vs. Supply Voltage
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VOS vs. Temperature
DC Gain vs. VOUT
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Input Bias Current vs. VCM
Input Bias Current vs. VCM
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Input Bias Current vs. VCM
Supply Current vs. Supply Voltage
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Sinking Current vs. Supply Voltage
Sourcing Current vs. Supply Voltage
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Output Swing High vs. Supply Voltage RL = 2k
Output Swing High vs. Supply Voltage RL = 10k
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Output Swing Low vs. Supply Voltage RL = 2k
Output Swing Low vs. Supply Voltage RL = 10k
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Output Voltage Swing vs. Load Current
Open Loop Frequency Response Over Temperature
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Open Loop Frequency Response Over Load Conditions
Phase Margin vs. CL
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PSRR vs. Frequency
CMRR vs. Frequency
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Channel separation vs. Frequency
Large Signal Step Response With GAIN = 1
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Large Signal Step Response With GAIN = 10
Small Signal Step Response With GAIN = 1
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Small Signal Step Response With GAIN = 10
Overshoot vs CL
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Input Voltage Noise vs. Frequency
THD+N vs. Frequency
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THD+N vs. VOUT
Closed Loop Output Impedance vs. Frequency
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Application Information
INTRODUCTION The LMV841 and LMV844 are operational amplifiers with near-precision specifications: low noise, low temperature drift, low offset and rail-to-rail input and output. The low supply current, a temperature range of −40°C to 125°C, the 12V supply with CMOS input and the small SC70 package make this a unique op amp family. Possible applications are instrumentation, medical, test equipment, audio and automotive applications. The small SC70 package for the LMV841, and the low supply current per amplifier, 1 mA, make the LMV841/LMV844 perfect choices for portable electronics. INPUT PROTECTION The LMV841/LMV844 have a set of anti-parallel diodes D1 and D2 between the input pins, as shown in Figure 1. These diodes are present to protect the input stage of the amplifier. At the same time, they limit the amount of differential input voltage that is allowed on the input pins. A differential signal larger than one diode voltage drop can damage the diodes. The differential signal between the inputs needs to be limited to ±300 mV or the input current needs to be limited to ±10 mA. Note that when the op amp is slewing, a differential input voltage exists that forward biases the protection diodes. This may result in current being drawn from the signal source. While this current is already limited by the internal resistors R1 and R2 (both 130Ω), a resistor of 1 kΩ can be placed in the feedback path, or a 500Ω resistor can be placed in series with the input signal for further limitation.
To reduce this small offset shift, the amplifier is trimmed during production, resulting in an input offset voltage of less then 0.5 mV at room temperature over the total input range. CAPACITIVE LOAD The LMV841/LMV844 can be connected as non-inverting unity-gain amplifiers. This configuration is the most sensitive to capacitive loading. The combination of a capacitive load placed on the output of an amplifier along with the amplifier’s output impedance creates a phase lag, which reduces the phase margin of the amplifier. If the phase margin is significantly reduced, the response will be underdamped which causes peaking in the transfer and when there is too much peaking the op amp might start oscillating. In order to drive heavier capacitive loads, an isolation resistor, RISO, should be used, as shown in Figure 2. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output, and hence, the pole caused by CL is no longer in the feedback loop. The larger the value of RISO, the more stable the output voltage will be. If values of RISO are sufficiently large, the feedback loop will be stable, independent of the value of CL. However, larger values of RISO result in reduced output swing and reduced output current drive.
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FIGURE 2. Isolating Capacitive Load REDUCING OVERSHOOT When the output of the op amp is at its lower swing limit (i.e. saturated near V−), rapidly rising signals can cause some overshoot. This overshoot can be reduced by adding a resistor from the output to V+. Even in extreme situations at high temperatures, a 10k resistor is sufficient to reduce the overshoot to negligible levels. The resistor at the output will however reduce the maximum output swing, as would any resistive load at the output. DECOUPLING AND LAYOUT Care must be given when creating the board layout for the op amp. For decoupling the supply lines it is suggested that 10 nF capacitors be placed as close as possible to the op amp. For single supply, place a capacitor between V+ and V−. For dual supplies, place one capacitor between V+ and the board ground, and the second capacitor between ground and V−. NOISE DUE TO RESISTORS The LMV841/LMV844 have good noise specifications, and will frequently be used in low-noise applications. Therefore it is important to take into account the influence of the resistors on the total noise contribution. For applications with a voltage input configuration it is, in general, beneficial to keep the resistor values low. In these configurations high resistor values mean high noise levels.
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FIGURE 1. Protection Diodes between the Input Pins INPUT STAGE The input stage of this amplifier consists of a PMOS and an NMOS input pair to achieve a more than rail-to-rail input range. For input voltages close to the negative rail, only the PMOS pair is active. Close to the positive rail, only the NMOS pair is active. For intermediate signals, the transition from PMOS pair to NMOS pair will result in a very small offset shift, which appears at approximately 1V from the positive rail.
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However, using low resistor values will increase the power consumption of the application. This is not always acceptable for portable applications. To determine if the noise is acceptable for the application, use the following formula for resistor noise :
a center frequency of approximately 10% from the frequency of the total filter: C = 33 nF R1 = 2 kΩ R2 = 6.2 kΩ R3 = 45 Ω This will give for filter A:
where: eth = Thermal noise voltage (Vrms) k = Boltzmann constant (1.38 x 10–23 J/K) T = Absolute temperature (K) R = Resistance (Ω) B = Noise bandwidth (Hz), fmax - fmin Given in an example with a resistor of 1MΩ at 25°C (298 K) over a frequency range of 100 kHz: Bandwidth can be calculated by: And for filter B with C = 27 nF:
For filter A this will give To keep the noise of the application low it might be necessary to decrease the resistors to 100k, which will decrease the noise to –97.8 dBV (12.8 uV). The op amp's input-referred noise of 20 nV/ at 1 kHz is equivalent to the noise of a 24 kΩ resistor. ACTIVE FILTER The rail-to-rail input and output of the LMV841/LMV844 and the wide supply voltage range make these amplifiers ideal to use in numerous applications. One of the typical applications is an active filter as shown in Figure 3. This example is a bandpass filter, for which the pass band is widened. This is achieved by cascading two band-pass filters, with slightly different center frequencies.
and for filter B:
The response of the two filters and the combined filter is shown in Figure 4.
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FIGURE 3. Active Filter The center frequency of the separate band-pass filters can be calculated by:
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FIGURE 4. Active Filter Curve
In this example a filter was designed with its pass band at 10 kHz. The two separate band-pass filters are designed to have
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The filter responses of filter A and filter B are shown as the thin lines in Figure 4, the response of the combined filter is shown as the thick line. Shifting the center frequencies of the separate filters farther apart, will result in a wider band, however positioning the center frequencies too far apart will result in a less flat gain within the band. For wider bands more bandpass filters can be cascaded. Tip: Use the WEBENCH internet tools at www.national.com for your filter application. HIGH-SIDE CURRENT SENSING The rail-to-rail input and the low VOS features make the LMV841/844 ideal op amps for high-side current sensing application. To measure a current, a sense resistor is placed in series with the load, as shown in Figure 5. The current flowing through this sense resistor will result in a voltage drop, that is amplified by the op amp. Suppose we need to measure a current between 0A and 2A using a sense resistor of 100 mΩ, and convert it to an output voltage of 0 to 5V. A current of 2A flowing through the load and the sense resistor will result in a voltage of 200 mV across the sense resistor. The op amp will amplify this 200 mV to fit the current range to the output voltage range. We can use the formula: VOUT= RF / RG * VSENSE to calculate the gain needed. For a load current of 2A and an output voltage of 5V the gain would be VOUT / VSENSE = 25. When we use a feedback resistor, RF, of 100 kΩ the value for RG would be 4 kΩ. The tolerance of the resistors has to be low to obtain a good common-mode rejection.
The voltage at the input of the op amp can be calculated by VIN+ = VS - IB * RS For a standard op amp the input bias Ib could be 10 nA. When the sensor generates a signal of 1V (VS) and the sensors impedance is 10 MΩ (RS), the signal at the op amp input will be VIN = 1V - 10 nA * 10 MΩ = 1V - 0.1V = 0.9V For the CMOS input of the LMV841/LMV844, which has an input bias current of only 0.3 pA, this would give VIN = 1V – 0.3 pA * 10 MΩ = 1V - 3 μV = 0.999997 V ! The conclusion is that a standard op amp, with its high input bias current input, is not a good choice for use in impedance sensor applications. The LMV841/LMV844, in contrast, are much more suitable due to the low input bias current. The error is negligibly small, therefore the LMV841/LMV844 are a must for use with high impedance sensors.
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FIGURE 6. High Impedance Sensor Interface THERMOCOUPLE AMPLIFIER The following is a typical example for a thermocouple amplifier application with an LMV841/LMV844. A thermocouple senses a temperature and converts it into a voltage. This signal is then amplified by the LMV841. An ADC can then convert the amplified signal to a digital signal. For further processing the digital signal can be processed by a microprocessor and can be used to display or log the temperature, or use the temperature data in a fabrication process. Characteristics of a Thermocouple A thermocouple is a junction of two different metals. These metals produce a small voltage that increases with temperature. The thermocouple used in this application is a K-type thermocouple. A K-type thermocouple is a junction between Nickel-Chromium and Nickel-Aluminum. This type is one of the most commonly used thermocouples. There are several reasons for using the K-type thermocouple. These include temperature range, the linearity, the sensitivity and the cost. A K-type thermocouple has a wide temperature range. The range of this thermocouple is from approximately −200°C to approximately 1200°C, as can be seen in Figure 7. This covers the generally used temperature ranges. Over the main part of the range the behavior is linear. This is important for converting the analog signal to a digital signal. The K-type thermocouple has good sensitivity when compared to many other types, the sensitivity is 41 uV/°C. Lower sensitivity requires more gain and makes the application more sensitive to noise. In addition, a K-type thermocouple is not expensive, many other thermocouples consist of more expensive materials or are more difficult to produce.
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FIGURE 5. High-Side Current Sensing HIGH IMPEDANCE SENSOR INTERFACE With CMOS inputs, the LMV841/LMV844 are particularly suited to be used as high impedance sensor interfaces. Many sensors have high source impedances that may range up to 10 MΩ. The input bias current of an amplifier will load the output of the sensor, and thus cause a voltage drop across the source resistance, as shown in Figure 6. When an op amp is selected with a relatively high input bias current, this error may be unacceptable. The low input current of the LMV841/LMV844 significantly reduces such errors. The following examples show the difference between a standard op amp input and the CMOS input of the LMV841/LMV844.
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When we use 2 kΩ for RG, we can calculate the value for RF with this gain of 160. We can use AV = RF / RG to calculate the gain, so we can calculate RF by using RF = AV x RG = 160 x 2 kΩ = 320 kΩ. To get a resolution of 0.5°C we need a step smaller then the minimum resolution, this means we need at least 1000 steps (500°C / 0.5°C). A 10-bit ADC would be sufficient as this will give us 1024 steps. This could be a 10 bit ADC like the two channel 10-bit ADC102S021. Unwanted Thermocouple Effect At the point where the thermocouple wires are connected to the circuit, usually copper wires or traces, an unwanted thermocouple effect will occur. At this connection, this could be the connector on a PCB, the thermocouple wiring forms a second thermocouple with the connector. This second thermocouple disturbs the measurements from the intended thermocouple. We can compensate for this thermocouple effect by using an isothermal block as a reference. An isothermal block is a good heat conductor. This means that the two thermocouple connections both have the same temperature. We can now measure the temperature of the isothermal block, and thereby the temperature of the thermocouple connections. This is usually called the cold junction reference temperature. In the example, an LM35 is used to measure this temperature. This semiconductor temperature sensor can accurately measure temperatures from −55°C to 150°C. The ADC in this example also coverts the signal from the LM35 to a digital signal. Now the microprocessor can compensate the amplified thermocouple signal, for the unwanted thermocouple effect.
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FIGURE 7. K-Type Thermocouple Response Thermocouple Example Suppose the range we are interested in for this example is from 0°C to 500°C, and the resolution needed is 0.5°C. The power supply for both the LMV841 and the ADC is 3.3V. The temperature range of 0°C to 500°C results in a voltage range from 0 mV to 20.6 mV produced by the thermocouple. This is shown in Figure 7 To obtain the best accuracy the full ADC range of 0 to 3.3V is used. We can calculate the gain we need for the full input range of the ADC : AV = 3.3V / 0.0206V = 160.
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FIGURE 8. Thermocouple Amplifier
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Physical Dimensions inches (millimeters) unless otherwise noted
5-Pin SC70 NS Package Number MAA05A
14–Pin TSSOP NS Package Number MTC14
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Notes
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Notes
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