MM74HC30

MM54HC30 MM74HC30 8-Input NAND Gate January 1988 MM54HC30 MM74HC30 8-Input NAND Gate General Description This NAND gate utilizes advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits This device has high noise immunity and the ability to drive 10 LS-TTL loads The 54HC 74HC logic family is functionally as well as pin-out compatible with the standard 54LS 74LS logic family All inputs are protected from damage due to static discharge by internal diode clamps to VCC and ground Features Y Y Y Y Y Typical propagation delay 20 ns Wide power supply range 2 – 6V Low quiescent current 20 mA maximum (74HC Series) Low input current 1 mA maximum Fanout of 10 LS-TTL loads Connection and Logic Diagrams Dual-In-Line Package TL F 5133 – 1 Top View Order Number MM54HC30 or MM74HC30 Y e ABCDEFGH TL F 5133 – 2 C1995 National Semiconductor Corporation TL F 5133 RRD-B30M105 Printed in U S A Absolute Maximum Ratings (Notes 1 2) Operating Conditions DC Supply Voltage (VCC) DC Input or Output Voltage (VIN VOUT) Operating Temp Range (TA) MM74HC MM54HC Input Rise Fall Times (tr tf) VCC e 2 0V VCC e 4 5V VCC e 6 0V Min 2 0 b 40 b 55 If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications b 0 5 to a 7 0V Supply Voltage (VCC) b 1 5 to VCC a 1 5V DC Input Voltage (VIN) b 0 5 to VCC a 0 5V DC Output Voltage (VOUT) g 20 mA Clamp Diode Current (ICD) g 25 mA DC Output Current per pin (IOUT) g 50 mA DC VCC or GND Current per pin (ICC) b 65 C to a 150 C Storage Temperature Range (TSTG) Power Dissipation (PD) (Note 3) 600 mW S O Package only 500 mW Lead Temp (TL) (Soldering 10 seconds) 260 C Max 6 VCC a 85 a 125 Units V V C C ns ns ns 1000 500 400 DC Electrical Characteristics (Note 4) Symbol Parameter Conditions VCC 2 0V 4 5V 6 0V 2 0V 4 5V 6 0V VIN e VIH or VIL lIOUTl s20 mA 2 0V 4 5V 6 0V 4 5V 6 0V 2 0V 4 5V 6 0V 4 5V 6 0V 6 0V 6 0V 20 45 60 42 57 0 0 0 02 02 TA e 25 C Typ VIH Minimum High Level Input Voltage Maximum Low Level Input Voltage Minimum High Level Output Voltage 15 3 15 42 05 1 35 18 19 44 59 3 98 5 48 01 01 01 0 26 0 26 g0 1 74HC TA eb40 to 85 C 54HC TA eb55 to 125 C Units Guaranteed Limits 15 3 15 42 05 1 35 18 19 44 59 3 84 5 34 01 01 01 0 33 0 33 g1 0 15 3 15 42 05 1 35 18 19 44 59 37 52 01 01 01 04 04 g1 0 V V V V V V V V V V V V V V V V mA mA VIL VOH VIN e VIH or VIL lIOUTl s4 0 mA lIOUTl s5 2 mA VOL Maximum Low Level Output Voltage VIN e VIH lIOUTl s20 mA VIN e VIH lIOUTl s4 mA lIOUTl s5 2 mA IIN ICC Maximum Input Current Maximum Quiescent Supply Current VIN e VCC or GND VIN e VCC or GND IOUT e 0 mA 20 20 40 Note 1 Maximum Ratings are those values beyond which damage to the device may occur Note 2 Unless otherwise specified all voltages are referenced to ground Note 3 Power Dissipation temperature derating plastic ‘‘N’’ package b 12 mW C from 65 C to 85 C ceramic ‘‘J’’ package b 12 mW C from 100 C to 125 C Note 4 For a power supply of 5V g 10% the worst case output voltages (VOH and VOL) occur for HC at 4 5V Thus the 4 5V values should be used when designing with this supply Worst case VIH and VIL occur at VCC e 5 5V and 4 5V respectively (The VIH value at 5 5V is 3 85V ) The worst case leakage current (IIN ICC and IOZ) occur for CMOS at the higher voltage and so the 6 0V values should be used VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89 2 AC Electrical Characteristics VCC e 5V Symbol tPHL tPLH Parameter Maximum Propagation Delay Conditions TA e 25 C CL e 15 pF tr e tf e 6 ns Typ 20 Guaranteed Limit 30 Units ns AC Electrical Characteristics VCC e 2 0V to 6 0V Symbol Parameter Conditions VCC 2 0V 4 5V 6 0V 2 0V 4 5V 6 0V CL e 50 pF tr e tf e 6tns (unless otherwise specified) 74HC TA eb40 to 85 C 54HC TA eb55 to 125 C Units TA e 25 C Typ Guaranteed Limits 160 35 30 75 15 13 190 42 36 95 19 16 220 49 42 110 22 19 ns ns ns ns ns ns pF 10 10 10 pF tPHL tPLH Maximum Propagation Delay Maximum Output Rise and Fall Time Power Dissipation Capacitance (Note 5) Maximum Input Capacitance 66 23 18 30 8 7 34 5 tTLH tTHL CPD CIN Note 5 CPD determines the no load dynamic power consumption PD e CPD VCC2 f a ICC VCC and the no load dynamic current consumption IS e CPD VCC f a ICC 3 MM54HC30 MM74HC30 8-Input NAND Gate Physical Dimensions inches (millimeters) Order Number MM54HC30J or MM74HC30J NS Package J14A Order Number MM74HC30N NS Package N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for 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